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  • 型号: KSC2328AOTA
  • 制造商: Fairchild Semiconductor
  • 库位|库存: xxxx|xxxx
  • 要求:
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KSC2328AOTA产品简介:

ICGOO电子元器件商城为您提供KSC2328AOTA由Fairchild Semiconductor设计生产,在icgoo商城现货销售,并且可以通过原厂、代理商等渠道进行代购。 KSC2328AOTA价格参考。Fairchild SemiconductorKSC2328AOTA封装/规格:晶体管 - 双极 (BJT) - 单, 双极 (BJT) 晶体管 NPN 30V 2A 120MHz 1W 通孔 TO-92-3。您可以下载KSC2328AOTA参考资料、Datasheet数据手册功能说明书,资料中有KSC2328AOTA 详细功能的应用电路图电压和使用方法及教程。

产品参数 图文手册 常见问题
参数 数值
产品目录

分立半导体产品

描述

TRANSISTOR NPN 30V 2A TO-92L两极晶体管 - BJT NPN Epitaxial Transistor

产品分类

晶体管(BJT) - 单路分离式半导体

品牌

Fairchild Semiconductor

产品手册

点击此处下载产品Datasheet

产品图片

rohs

过渡期间无铅 / 符合限制有害物质指令(RoHS)规范要求

产品系列

晶体管,两极晶体管 - BJT,Fairchild Semiconductor KSC2328AOTA-

数据手册

点击此处下载产品Datasheet

产品型号

KSC2328AOTA

不同 Ib、Ic时的 Vce饱和值(最大值)

2V @ 30mA,1.5A

不同 Ic、Vce 时的DC电流增益(hFE)(最小值)

100 @ 500mA,2V

产品种类

两极晶体管 - BJT

供应商器件封装

TO-92L

其它名称

KSC2328AOTACT

功率-最大值

1W

包装

剪切带 (CT)

单位重量

185 mg

发射极-基极电压VEBO

5 V

商标

Fairchild Semiconductor

增益带宽产品fT

120 MHz

安装类型

通孔

安装风格

Through Hole

封装

Ammo Pack

封装/外壳

TO-226-3、TO-92-3(TO-226AA)成形引线

封装/箱体

TO-92L

工厂包装数量

2000

晶体管极性

NPN

晶体管类型

NPN

最大功率耗散

1 W

最大工作温度

+ 150 C

最大直流电集电极电流

2 A

最小工作温度

- 55 C

标准包装

1

电压-集射极击穿(最大值)

30V

电流-集电极(Ic)(最大值)

2A

电流-集电极截止(最大值)

100nA(ICBO)

直流电流增益hFE最大值

320

直流集电极/BaseGainhfeMin

100

系列

KSC2328

配置

Single

集电极—发射极最大电压VCEO

30 V

集电极—基极电压VCBO

30 V

集电极—射极饱和电压

2 V

集电极连续电流

2 A

零件号别名

KSC2328AOTA_NL

频率-跃迁

120MHz

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PDF Datasheet 数据手册内容提取

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor’s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclature that utilizes an underscore (_), the underscore (_) in the Fairchild part numbers will be changed to a dash (-). This document may contain device numbers with an underscore (_). Please check the ON Semiconductor website to verify the updated device numbers. The most current and up-to-date ordering information can be found at www.onsemi.com. Please email any questions regarding the system integration to Fairchild_questions@onsemi.com. ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

K S C 2 October 2014 3 2 8 A — N KSC2328A P N NPN Epitaxial Silicon Transistor E p i t a x i a l Features S i l • Audio Power Amplifier Application ic o • Complement to KSA928A n • 3 W Output Application T r a n 1 TO-92L s i s 1. Emitter 2. Collector 3. Base t o r Ordering Information Part Number Top Mark Package Packing Method KSC2328AOTA C2328A O- TO-92 3L Ammo KSC2328AYBU C2328A Y- TO-92 3L Bulk KSC2328AYTA C2328A Y- TO-92 3L Ammo Absolute Maximum Ratings Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera- ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi- tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at T = 25°C unless otherwise noted. A Symbol Parameter Value Unit V Collector-Base Voltage 30 V CBO V Collector-Emitter Voltage 30 V CEO V Emitter-Base Voltage 5 V EBO I Collector Current 2 A C T Junction Temperature 150 °C J T Storage Temperature -55 to +150 °C STG © 2002 Fairchild Semiconductor Corporation www.fairchildsemi.com KSC2328A Rev. 1.1.0

K S Thermal Characteristics(1) C 2 Values are at T = 25°C unless otherwise noted. 3 A 2 8 Symbol Parameter Value Unit A — Power Dissipation 1000 mW PD Derate Above 25°C 8.0 mW/°C N P RθJA Thermal Resistance, Junction-to-Ambient 125 °C/W N E Note: p i t 1. PCB size: FR-4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size. a x i a l S Electrical Characteristics i l i c Values are at T = 25°C unless otherwise noted. o A n Symbol Parameter Conditions Min. Typ. Max. Unit T r a BV Collector-Base Breakdown Voltage I = 100 μA, I = 0 30 V n CBO C E s BVCEO Collector-Emitter Breakdown Voltage IC = 10 mA, IB = 0 30 V is t BV Emitter-Base Breakdown Voltage I = 1 mA, I = 0 5 V o EBO E C r I Collector Cut-Off Current V = 30 V, I = 0 100 nA CBO CB E I Emitter Cut-Off Current V = 5 V, I = 0 100 nA EBO EB C h DC Current Gain V = 2 V, I = 500 mA 100 320 FE CE C V (on) Base-Emitter On Voltage V = 2 V, I = 500 mA 1.0 V BE CE C V (sat) Collector-Emitter Saturation Voltage I = 1.5 A, I = 0.03 A 2.0 V CE C B f Current Gain Bandwidth Product V = 2 V, I = 500 mA 120 MHz T CE C V = 10 V, I = 0, C Collector Output Capacitance CB E 30 pF ob f = 1 MHz h Classification FE Classification O Y h 100 ~ 200 160 ~ 320 FE © 2002 Fairchild Semiconductor Corporation www.fairchildsemi.com KSC2328A Rev. 1.1.0 2

K S Typical Performance Characteristics C 2 3 2 8 A 1400 I = 7mA — B VCE = 2V ENT 1200 IB = 6mA NP OR CURR 1080000 IIBB == 54mmAA NT GAIN 1000 N Ep COLLECT 600 IB = 3mA C CURRE 100 itaxi I[mA], C 240000 IIBB == 21mmAA h, DFE al Sil i c 0 10 o 0 2 4 6 8 10 12 14 16 18 1 10 100 1000 n VCE[V], COLLECTOR-EMITTER VOLTAGE IC[mA], COLLECTOR CURRENT T r a Figure 1. Static Characteristic Figure 2. DC Current Gain n s i s t o r E 1400 G TA VCE = 2V OL IC = 50 IB 1200 TION V 1 Ta = 25oC RRENT 1000 A U R C ATU OR 800 V(sat), V(sat)[V], SBECE 0.1 I[mA], COLLECTC 246000000 0.011 10 100 1000 00.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 I[mA], COLLECTOR CURRENT VBE[V], BASE-EMITTER VOLTAGE C Figure 3. Collector-Emitter Saturation Voltage Figure 4. Base-Emitter On Voltage 10 1.4 IC (MAX) PULSE 1.2 RRENT 1 IC (MAX) 1s 1ms ATION 1.0 LLECTOR CU 0.1 TC=D25C CoOPERATING OWER DISSIP 00..68 O P I[A], CC VCEO (MAX) P[W], C 00..24 0.01 0.1 1 10 100 0.0 0 25 50 75 100 125 150 175 VCE[V], COLLECTOR-EMITTER VOLTAGE T[oC], AMIBIENT TEMPERATURE a Figure 5. Safe Operating Area Figure 6. Power Derating © 2002 Fairchild Semiconductor Corporation www.fairchildsemi.com KSC2328A Rev. 1.1.0 3

None

None

ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: N. American Technical Support: 800−282−9855 Toll Free ON Semiconductor Website: www.onsemi.com Literature Distribution Center for ON Semiconductor USA/Canada 19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA Europe, Middle East and Africa Technical Support: Order Literature: http://www.onsemi.com/orderlit Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Phone: 421 33 790 2910 Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Japan Customer Focus Center For additional information, please contact your local Email: orderlit@onsemi.com Phone: 81−3−5817−1050 Sales Representative © Semiconductor Components Industries, LLC www.onsemi.com www.onsemi.com 1

Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: O N Semiconductor: KSC2328AYTA KSC2328AYBU KSC2328AOTA KSC2328AOBU KSC2328AOTA_Q KSC2328AYTA_Q