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K S C 2 2 2 KSC2223 3 High Frequency Amplifier • Very small size to assure good space factor in Hybrid IC applications 3 • f =600MHz (TYP) at I =1mA T C • C =1pF (TYP) at V =6V ob CB • NF=3dB (TYP) at f=100MHz 2 1 SOT-23 1. Base 2. Emitter 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings T =25°C unless otherwise noted a Symbol Parameter Value Units V Collector-Base Voltage 30 V CBO V Collector-Emitter Voltage 20 V CEO V Emitter-Base Voltage 4 V EBO I Collector Current 20 mA C P Collector Power Dissipation 150 mW C T Junction Temperature 150 °C J T Storage Temperature -55 ~ 150 °C STG Electrical Characteristics T =25°C unless otherwise noted a Symbol Parameter Test Condition Min. Typ. Max. Units I Collector Cut-off Current V 30V, I =0 0.1 µA CBO CB= E h DC Current Gain V =6V, I =1mA 40 90 180 FE CE C V (sat) Collector Emitter Saturation Voltage I =10mA, I =1mA 0.1 0.3 V CE C B C Output Capacitance V =6V, I =0, f=1MHz 1 pF ob CB E f Current Gain Bandwidth Product V =6V, I =1mA 400 600 MHz T CE C C Time Constant V =6V, I =1mA 12 ps c·rbb CB C f=31.9MHz NF Noise Figure V =6V, I =1mA 3 dB CE C f=100MHz, R =50Ω S h Classification FE Classification R O Y h 40 ~ 80 60 ~ 120 90 ~ 180 FE Marking H5O h grade FE ©2002 Fairchild Semiconductor Corporation Rev. A3, September 2002

K Typical Characteristics S C 2 2 2 3 10 1000 VCE = 6V I[mA], COLLECTOR CURRENTC 2468 IIIIIIIIBBBBBBB ======== 7624518300000000µµµµµµµµAAAAAAAA h, DC CURRENT GAINFE 100 B 10 0 0.1 1 10 100 0 4 8 12 16 20 V [V], COLLECTOR-EMITTER VOLTAGE IC[mA], COLLECTOR CURRENT CE Figure 1. Static Characteristic Figure 2. DC current Gain 1 1000 E 10 G IC = 1mA LTA IC = 10 IB O V N N O GAI ATI 1 VBE(sat) h, DC CURRENT FE 100 at), V(sat)[V], SATURCE 0.1 VCE(sat) V(sBE 101 10 100 0.010.1 1 10 VCE[V], COLLECTOR-EMITTER VOLTAGE I[mA], COLLECTOR CURRENT C Figure 3. DC current Gain 2 Figure 4. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage 1000 T 100 N VCE = 6V STA VCB = 6V NT ON f = 31.9MHz E 100 C R E R M ECTOR CU 10 R-BASE TI 10 L O OL CT C E I[mA], C 1 s], COLL p 0.10.0 0.2 0.4 0.6 0.8 1.0 1.2 C[c.rbb 10.1 1 10 100 VBE[V], BASE-EMITTER VOLTAGE IE[mA], EMITTER CURRENT Figure 5. Base-Emitter On Voltage Figure 6. Collector-Base Time Constant ©2002 Fairchild Semiconductor Corporation Rev. A3, September 2002

K Typical Characteristics (Continued) S C 2 2 2 CT 10000 3 U 24 VCE = 6V ROD VCE = 6V f = 100MHz P 20 H RE DT U WI FIG 16 ND OISE 12 N BA 1000 N AI F[dB], 8 ENT G N R 4 UR C 0 Hz], 100 0.1 1 10 M 0.1 1 10 100 f[T IE[mA], EMITTER CURRENT IE[mA], EMITTER CURRENT Figure 7. Noise Figure Figure 8. Current Gain Bandwidth Product 10 200 f = 1MHz 180 E T CAPACITANCEUT CAPACITANC 1 Cie (IC=0) Cob (IE=0) ER DISSIPATION 111102460000 UP W C[pF], INPieC[pF], OUTob P[mW], POC 468000 20 0.1 0.1 1 10 100 0 0 25 50 75 100 125 150 175 VCB[V], COLLECTOR-BASE VOLTAGE VEB[V], EMITTER-BASE VOLTAGE Ta[oC], AMIBIENT TEMPERATURE Figure 9. Input and Output Capacitance Figure 10. Power Derating ©2002 Fairchild Semiconductor Corporation Rev. A3, September 2002

K Package Dimensions S C 2 2 2 3 SOT-23 N MI 0 6 0 0.40 ±0.03 ~0. 0.2 5 4 0. ±30 0.10 ±40 0.10 0.03~0.10 1. 2. 0.38 REF 0.40 ±0.03 +0.05 0.12 –0.023 0.96~1.14 2.90 ±0.10 F E R 7 9 0. 0.95 ±0.03 0.95 ±0.03 1.90 ±0.03 0.508REF Dimensions in Millimeters ©2002 Fairchild Semiconductor Corporation Rev. A3, September 2002

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