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K S C 2 September 2011 0 7 3 KSC2073 — N NPN Epitaxial Silicon Transistor P N E p i t a Features x i a • TV Vertical Deflection Output l S • Complement to KSA940 i l • Collector-Base Voltage : VCBO = 150V ic o n 1 TO-220 T r 1.Base 2.Collector 3.Emitter a n s i s t Absolute Maximum Ratings TA = 25°C unless otherwise noted or Symbol Parameter Value Units V Collector-Base Voltage 150 V CBO V Collector-Emitter Voltage 150 V CEO V Emitter-Base Voltage 5 V EBO I Collector Current 1.5 A C P Collector Dissipation (T = 25°C) 25 W C C T Junction Temperature 150 °C J T Storage Temperature - 55 to 150 °C STG Electrical Characteristics T = 25°C unless otherwise noted A Symbol Parameter Test Condition Min. Typ. Max. Units BV Collector-Base Breakdown Voltage I = 500μA, I = 0 150 V CBO C E BV Collector-Emitter Breakdown Voltage I = 10mA, I = 0 150 V CEO C B BV Emitter-Base Breakdown Voltage I = 500μA, I = 0 5 V EBO E C I Collector Cut-off Current V = 120V, I = 0 10 μA CBO CB E h DC Current Gain V = 10V, I = 0.5A 40 75 140 FE CE C V (sat) Collector-Emitter Saturation Voltage I = 500mA, I = 50mA 1 V CE C B f Current Gain Bandwidth Product V = 10V, I = 0.5A 4 MHz T CE C C Output Capacitance V =10V, I = 0, 50 pF ob CB E f = 1MHz h Classification FE Classification H1 H2 h 40 ~ 80 60 ~ 125 FE © 2011 Fairchild Semiconductor Corporation www.fairchildsemi.com KSC2073 Rev. A1 1

K S Typical Performance Characteristics C 2 0 7 3 1.0 1000 — 0.9 VCE=10V N NT 0.8 IB=8mA PN RRE 0.7 IB=7mA GAIN E R CU 0.6 IB=6mA ENT pit OLLECTO 000...345 IB=5IBm=4IABm=3AmA DC CURR 100 axial I[A], CC 0.2 IB=2mA h, FE Silic 0.1 IB=1mA o 0.0 10 n 0 5 10 15 20 25 30 35 40 45 50 0.01 0.1 1 10 T r VCE[V], COLLECTOR-EMITTER VOLTAGE IC[A], COLLECTOR CURRENT an s Figure 1. Static Characteristic Figure 2. DC current Gain i s t o r 10 1000 GE IC=10IB f=1MHz TA IE=0 L O V N E URATIO 1 VBE(sat) CITANC AT PA 100 V(sat)[V], SCE 0.1 VCE(sat) C[pF], CAob at), s V(BE 0.010.01 0.1 1 10 101 10 100 IC[A], COLLECTOR CURRENT VCB[V], COLLECTOR-BASE VOLTAGE Figure 3. Base-Emitter Saturation Voltage Figure 4. Collector-Emitter On Voltage Collector-Emitter Saturation Voltage 10 40 1.T=25oC 2.*SCingle pulse 35 T N N O 30 TOR CURRE 1 Thermal limitaDtioCn S/B limitatio*n1mS R DISSIPATI 2205 C E E W OLL PO 15 I[A], CC S/B limitation P[W], C 150 0.1 0 10 100 0 25 50 75 100 125 150 VCE[V], COLLECTOR EMITTER VOLTAGE T[oC], CASE TEMPERATURE C Figure 5. Safe Operating Area Figure 6. Power Derating © 2011 Fairchild Semiconductor Corporation www.fairchildsemi.com KSC2073 Rev. A1 2

3.89 3.60 A 10.360 10.109 0.36 M B A C 8.89 B 2.860 1.41 6.477 6.86 2.660 1.17 6.121 7° 3° 12.88 15.22 12.19 14.76 15.97 8.79 15.89 8.59 5° 5° 3° 3° 1 3 3 1 6.90 F 6.60 0.89 2.76 0.79 2.56 3.96 3.51 0.36 M C B 0.61 1.91 1.65 0.33 1.25 2.64 2.44 5.18 4.98 NOTES: A. PACKAGE REFERENCE: JEDEC TO220 VARIATION AB B. ALL DIMENSIONS ARE IN MILLIMETERS. C. DIMENSION AND TOLERANCE AS PER ASME 5° 5° Y14.5-1994. 3° 3° D. DIMENSIONS ARE EXCLUSIVE OF BURRS, MOLD FLASH AND TIE BAR PROTRUSIONS. E. FAIRCHILD SEMICONDUCTOR. F DOES NOT COMPLY JEDEC STD VALUE. G. DRAWING FILE NAME: TO220U03REV1 4.67 4.47

SUPPLIER"B"PACKAGE SHAPE (cid:145)(cid:23)(cid:17)(cid:19)(cid:19) 3.50 10.67 SUPPLIER"A"PACKAGE 9.65 E SHAPE 3.40 2.50 16.30 IFPRESENT,SEENOTE"D" 13.90 E 16.51 9.40 15.42 8.13 E 1 2 3 2.46 4.10 C 2.70 14.04 2.13 12.70 2.06 FRONTVIEWS 4.70 1.62 1.62 4.00 1.42H 2.67 1.10 2.40 "A1" 8.65 1.00 SEENOTE"F" 7.59 0.55 (cid:24)(cid:131) (cid:24)(cid:131) OPTIONAL 6.69 (cid:22)(cid:131) (cid:22)(cid:131) 6.06 CHAMFER E 14.30 11.50 NOTE"I" BOTTOMVIEW NOTES: A)REFERENCEJEDEC,TO-220,VARIATIONAB B)ALLDIMENSIONSAREINMILLIMETERS. C)DIMENSIONSCOMMONTOALLPACKAGE SUPPLIERSEXCEPTWHERENOTED. 3 2 1 D)LOCATIONOFMOLDEDFEATUREMAYVARY (LOWERLEFTCORNER,LOWERCENTER ANDCENTEROFTHEPACKAGE) EDOESNOTCOMPLYJEDECSTANDARDVALUE. F)"A1"DIMENSIONSASBELOW: SINGLEGAUGE=0.51-0.61 DUALGAUGE=1.10-1.45 G)DRAWINGFILENAME:TO220B03REV9 HPRESENCEISSUPPLIERDEPENDENT I)SUPPLIERDEPENDENTMOLDLOCKINGHOLES INHEATSINK. 0.60 0.36 2.85 BACKVIEW 2.10 SIDEVIEW

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