Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor’s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclature that utilizes an underscore (_), the underscore (_) in the Fairchild part numbers will be changed to a dash (-). This document may contain device numbers with an underscore (_). Please check the ON Semiconductor website to verify the updated device numbers. The most current and up-to-date ordering information can be found at www.onsemi.com. Please email any questions regarding the system integration to Fairchild_questions@onsemi.com. ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

K S C 1 May 2016 8 1 5 — N P KSC1815 N E NPN Epitaxial Silicon Transistor p i t a x i a l S Features i l i c • Audio Frequency Amplifier and High-Frequency OSC o n • Complement to KSA1015 T • Collector-Base Voltage: V = 50 V r CBO a n s i TO-92 s 1 t o 1. Emitter 2. Collector 3. Base r Ordering Information Part Number Top Mark Package Packing Method KSC1815YTA YC&3 TO-92 3L Ammo Absolute Maximum Ratings Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera- ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi- tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TA = 25C unless otherwise noted. Symbol Parameter Value Unit V Collector-Base Voltage 60 V CBO V Collector-Emitter Voltage 50 V CEO V Emitter-Base Voltage 5 V EBO I Collector Current 150 mA C I Base Current 50 mA B T Junction Temperature 150 C J T Storage Temperature Range -55 to 150 C STG © 1999 Fairchild Semiconductor Corporation www.fairchildsemi.com KSC1815 Rev. 1.8 1

K S Thermal Characteristics(1) C 1 Values are at T = 25C unless otherwise noted. 8 A 1 5 Symbol Parameter Max. Unit — Total Device Dissipation 400 mW N PD P Derate Above 25C 3.2 mW/C N R Thermal Resistance, Junction to Ambient 312 C/W E JA p i Note: t a 1. PCB size: FR-4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size. x i a l S i Electrical Characteristics li c o Values are at T = 25°C unless otherwise noted. A n T Symbol Parameter Conditions Min. Typ. Max. Unit r a BV Collector-Base Voltage I = 1 mA, I = 0 60 V n CBO C E s i BV Collector-Emitter Voltage I = 10 mA, I = 0 50 V s CEO C B t o BVEBO Emitter-Base Voltage IE = 10 A, IC = 0 5 V r I Collector Cut-Off Current V = 60 V, I = 0 0.1 A CBO CB E I Emitter Cut-Off Current V = 5 V, I = 0 0.1 A EBO EB C V Collector-Emitter Saturation Voltage I = 100 mA, I = 10 mA 0.10 0.25 V CE(sat) C B V Base-Emitter Saturation Voltage I = 100 mA, I = 10 mA 1.0 V BE(sat) C B h DC Current Gain V = 6 V, I = 2 mA 70 700 FE1 CE C h DC Current Gain V = 6 V, I = 150 mA 25 FE2 CE C f Current Gain Bandwidth Product V = 10 V, I = 1 mA 80 MHz T CE C V = 10 V, I = 0, C Output Capacitance CB E 2.0 3.0 pF ob f = 1 MHz V = 6 V, I = 0.1 mA, N Noise Figure CE C 1.0 10.0 dB F R = 10 k, f = 1 Hz S h Classification FE Classification O Y GR L h 70 ~ 140 120 ~ 240 200 ~ 400 350 ~ 700 FE1 © 1999 Fairchild Semiconductor Corporation www.fairchildsemi.com KSC1815 Rev. 1.8 2

K S Typical Performance Characteristics C 1 8 1 5 100 100 — I = 400A VCE=6V N B RRENT 80 IB = 350IB =A 300A RRENT 10 PN E U I = 250A U CTOR C 60 BIB = 200A CTOR C pitax mA], COLLE 2400 IB = 150IB =A 100A mA], COLLE 1 ial Sil I[C IB = 50A I[C ico 0 0.1 n 0 4 8 12 16 20 0.0 0.2 0.4 0.6 0.8 1.0 1.2 T r VCE[V], COLLECTOR-EMITTER VOLTAGE VBE[V], BASE-EMITTER VOLTAGE an Figure 1. Static Characteristic Figure 2. Transfer Characteristic s i s t o r E 10000 VCE = 6V TAG IC=10IB L O V GAIN 1000 TION 1000 VBE(sat) RRENT SATURA C CU mV], 100 VCE(sat) h, DFE V(sat)[CE at), s 101 10 100 1000 V(BE 101 10 100 1000 IC[mA], COLLECTOR CURRENT IC[mA], COLLECTOR CURRENT Figure 3. DC Current Gain Figure 4. Base-Emitter Saturation Voltage and Collector-Emitter Saturation Voltage 100 1000 f=1MHz T VCE=6V IE=0 UC D O E R CAPACITANC 10 MHz],ANDWIDTH P 100 C[pF], ob 1 f[TGAIN-B 10 T N E R R U 1 1 10 100 1000 C 0.1 1 10 100 VCB[V], COLLECTOR-BASE VOLTAGE IC[mA], COLLECTOR CURRENT Figure 5. Output Capacitance Figure 6. Current Gain Bandwidth Product © 1999 Fairchild Semiconductor Corporation www.fairchildsemi.com KSC1815 Rev. 1.8 3

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