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KSA992FTA产品简介:
ICGOO电子元器件商城为您提供KSA992FTA由Fairchild Semiconductor设计生产,在icgoo商城现货销售,并且可以通过原厂、代理商等渠道进行代购。 KSA992FTA价格参考。Fairchild SemiconductorKSA992FTA封装/规格:晶体管 - 双极 (BJT) - 单, 双极 (BJT) 晶体管 PNP 120V 50mA 100MHz 500mW 通孔 TO-92-3。您可以下载KSA992FTA参考资料、Datasheet数据手册功能说明书,资料中有KSA992FTA 详细功能的应用电路图电压和使用方法及教程。
参数 | 数值 |
产品目录 | |
描述 | TRANSISTOR PNP 120V 50MA TO-92两极晶体管 - BJT PNP Epitaxial Sil |
产品分类 | 晶体管(BJT) - 单路分离式半导体 |
品牌 | Fairchild Semiconductor |
产品手册 | |
产品图片 | |
rohs | 符合RoHS无铅 / 符合限制有害物质指令(RoHS)规范要求 |
产品系列 | 晶体管,两极晶体管 - BJT,Fairchild Semiconductor KSA992FTA- |
数据手册 | |
产品型号 | KSA992FTA |
PCN设计/规格 | |
不同 Ib、Ic时的 Vce饱和值(最大值) | 300mV @ 1mA,10mA |
不同 Ic、Vce 时的DC电流增益(hFE)(最小值) | 300 @ 1mA,6V |
产品种类 | 两极晶体管 - BJT |
供应商器件封装 | TO-92-3 |
其它名称 | KSA992FTACT |
功率-最大值 | 500mW |
包装 | 剪切带 (CT) |
单位重量 | 240 mg |
发射极-基极电压VEBO | - 5 V |
商标 | Fairchild Semiconductor |
增益带宽产品fT | 100 MHz |
安装类型 | 通孔 |
安装风格 | Through Hole |
封装 | Ammo Pack |
封装/外壳 | TO-226-3、TO-92-3(TO-226AA)成形引线 |
封装/箱体 | TO-92-3 Kinked Lead |
工厂包装数量 | 2000 |
晶体管极性 | PNP |
晶体管类型 | PNP |
最大功率耗散 | 0.5 W |
最大工作温度 | + 150 C |
最大直流电集电极电流 | 0.05 A |
最小工作温度 | - 55 C |
标准包装 | 1 |
电压-集射极击穿(最大值) | 120V |
电流-集电极(Ic)(最大值) | 50mA |
电流-集电极截止(最大值) | 1µA |
直流电流增益hFE最大值 | 800 |
直流集电极/BaseGainhfeMin | 200 |
系列 | KSA992 |
配置 | Single |
集电极—发射极最大电压VCEO | - 120 V |
集电极—基极电压VCBO | - 120 V |
集电极—射极饱和电压 | - 90 mV |
集电极连续电流 | - 0.05 A |
零件号别名 | KSA992FTA_NL |
频率-跃迁 | 100MHz |
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor’s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclature that utilizes an underscore (_), the underscore (_) in the Fairchild part numbers will be changed to a dash (-). This document may contain device numbers with an underscore (_). Please check the ON Semiconductor website to verify the updated device numbers. The most current and up-to-date ordering information can be found at www.onsemi.com. Please email any questions regarding the system integration to Fairchild_questions@onsemi.com. ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
K S A 9 September 2015 9 2 — P N P KSA992 E p PNP Epitaxial Silicon Transistor i t a x i a l S i l Features ic o n • Audio Frequency Low-Noise Amplifier T • Complement to KSC1845 r a n s TO-92 is t 1. Emitter o 2. Collector r 123 1 2 3. Base 3 Straight Lead Bent Lead Bulk Packing Tape & Reel Ammo Packing Ordering Information Part Number Top Mark Package Packing Method KSA992FBU A992 TO-92 3L Bulk KSA992FTA A992 TO-92 3L Ammo KSA992FATA A992 TO-92 3L Ammo KSA992FBTA A992 TO-92 3L Ammo Absolute Maximum Ratings Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera- ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi- tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at T = 25°C unless otherwise noted. A Symbol Parameter Value Unit V Collector-Base Voltage -120 V CBO V Collector-Emitter Voltage -120 V CEO V Emitter-Base Voltage -5 V EBO I Collector Current -50 mA C I Base Current -10 mA B T Junction Temperature 150 °C J T Storage Temperature -55 to 150 °C STG © 2004 Fairchild Semiconductor Corporation www.fairchildsemi.com KSA992 Rev. 2.2
K S Thermal Characteristics(1) A 9 Values are at T = 25°C unless otherwise noted. 9 A 2 — Symbol Parameter Value Unit P Power Dissipation 500 mW N P D Derate Above 25°C 4 mW/°C P E RθJA Thermal Resistance, Junction-to-Ambient 250 °C/W p i t a Note: x i 1. PCB size: FR-4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size. a l S i l i c Electrical Characteristics o n Values are at TA = 25°C unless otherwise noted. T r a Symbol Parameter Conditions Min. Typ. Max. Unit n s ICBO Collector Cut-Off Current VCB = -120 V, IE = 0 -50 nA is t I Collector Cut-Off Current V = -100 V, I = 0 -1 μA o CEO CE B r I Emitter Cut-Off Current V = -5 V, I = 0 -50 nA EBO EB C h V = -6 V, I = -0.1 mA 150 500 FE1 CE C DC Current Gain h V = -6 V, I = -1 mA 200 500 800 FE2 CE C V (on) Base-Emitter On Voltage V = -6 V, I = -1 mA -0.55 -0.61 -0.65 V BE CE C V (sat) Collector-Emitter Saturation Voltage I = -10 mA, I = -1 mA -0.09 -0.30 V CE C B fT Current Gain Bandwidth Product VCE = -6 V, IC = -1 mA 50 100 MHz V = -30 V, I = 0, C Output Capacitance CB E 2 3 pF ob f = 1 MHz V = -5.0 V, I = -1.0 mA, CE C NV Noise Voltage R = 100kΩ, G = 80 dB, 25 40 mV G V f = 10 Hz to 1.0 kHz h Classification FE Classification P F FA FB E h 200 ~ 400 300 ~ 600 300 ~ 470 430 ~ 600 400 ~ 800 FE2 © 2004 Fairchild Semiconductor Corporation www.fairchildsemi.com KSA992 Rev. 2.2 2
K S Typical Performance Characteristics A 9 9 2 — -1.0 -10 P IB = -1.2μAIB = -1.2μA IB = -24μA IB = -20μA NP ENT -0.8 IB = -1.0μA ENT -8 E CURR IB = -0.8μA CURR IB = -16μA pit ECTOR -0.6 IB = -0.6μA ECTOR -6 IB = -12μA axia COLL -0.4 IB = -0.4μA COLL -4 IB = -8μA l S I[mA], C -0.2 IB = -0.2μA I[mA], C -2 IB = -4μA ilico n 0.0 IB = 0 0 IB = 0 T 0 -20 -40 -60 -80 -100 0 -1 -2 -3 -4 -5 r a VCE[V], COLLECTOR-EMITTER VOLTAGE VCE[V], COLLECTOR-EMITTER VOLTAGE n s i s Figure 1. Static Characteristic Figure 2. Static Characteristic t o r 1000 GE -10 VCE= -6V LTA IC = 10 - IB O 800 N V N O GAI ATI -1 VBE(sat) h, DC CURRENT FE 246000000 at), V(sat)[V], SATURBE -0.1 VCE(sat) 0 V(sCE -0.01 -0.01 -0.1 -1 -10 -100 -0.1 -1 -10 -100 IC[mA], COLLECTOR CURRENT IC[mA], COLLECTOR CURRENT Figure 3. DC Current Gain Figure 4. Base-Emitter Saturation Voltage and Collector-Emitter Saturation Voltage 10 CT 1000 IE=0 DU VCE = -6V f = 1MHz RO P H NCE WIDT 100 APACITA 1 N-BAND C AI C [pF], ob RENT G 10 R U C 0.1 Hz], 1 -1 -10 -100 -1000 M 0.1 1 10 100 f[T VCB [V], COLLECTOR-BASE VOLTAGE IE[mA], COLLECTOR CURRENT Figure 5. Collector Output Capacitance Figure 6. Current Gain Bandwidth Product © 2004 Fairchild Semiconductor Corporation www.fairchildsemi.com KSA992 Rev. 2.2 3
K S Typical Performance Characteristics (Continued) A 9 9 2 — P 800 N 700 P TION 600 Ep SIPA 500 ita DIS x ER 400 ia OW 300 l S P W], 200 ili m c P[C 100 o n 0 T 0 25 50 75 100 125 150 175 r a Ta[oC], AMBIENT TEMPERATURE n s i s Figure 7. Power Derating t o r © 2004 Fairchild Semiconductor Corporation www.fairchildsemi.com KSA992 Rev. 2.2 4
K S Physical Dimensions A 9 9 2 — P N P E p i t a x i a l S i l i c o n T r a n s i s t o r Figure 8. 3-Lead, TO-92, JEDEC TO-92 Compliant Straight Lead Configuration, Bulk Type © 2004 Fairchild Semiconductor Corporation www.fairchildsemi.com KSA992 Rev. 2.2 5
K S Physical Dimensions (Continued) A 9 9 2 — P N P E p i t a x i a l S i l i c o n T r a n s i s t o r Figure 9. 3-Lead, TO-92, Molded, 0.2 In Line Spacing Lead Form, Ammo, Tape and Reel Type © 2004 Fairchild Semiconductor Corporation www.fairchildsemi.com KSA992 Rev. 2.2 6
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