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www.fairchildsemi.com KA5x03xx-SERIES KA5H0365R, KA5M0365R, KA5L0365R KA5H0380R, KA5M0380R, KA5L0380R Fairchild Power Switch(FPS) Features Description • Precision Fixed Operating Frequency (100/67/50kHz) The Fairchild Power Switch(FPS) product family is specially • Low Start-up Current(Typ. 100uA) designed for an off-line SMPS with minimal external • Pulse by Pulse Current Limiting components. The Fairchild Power Switch(FPS) consists of a • Over Current Protection high voltage power SenseFET and a current mode PWM IC. • Over Voltage Protection (Min. 25V) Included PWM controller integrates the fixed frequency • Internal Thermal Shutdown Function oscillator, the under voltage lock-out, the leading edge • Under Voltage Lockout blanking, the optimized gate turn-on/turn-off driver, the • Internal High Voltage Sense FET thermal shutdown protection, the over voltage protection, • Auto-Restart Mode and the temperature compensated precision current sources for the loop compensation and the fault protection circuitry. Applications Compared to a discrete MOSFET and a PWM controller or an RCCsolution, a Fairchild Power Switch(FPS) can reduce • SMPS for VCR, SVR, STB, DVD & DVCD the total component count, design size and weight and at the • SMPS for Printer, Facsimile & Scanner same time increase efficiency, productivity, and system • Adaptor for Camcorder reliability. It has a basic platform well suited for the cost effective design in either a flyback converter or a forward converter TO-220F-4L 1 1. GND 2. Drain 3. VCC 4. FB Internal Block Diagram #3 VCC 32V 5V Internal #2 DRAIN Vref bias SFET Good logic OSC 9V S 5μA 1mA R Q #4 FB − 2.5R L.E.B + 1R 0.1V + 7.5V − S #1 GND Q R + Thermal S/D 27V − Power on reset OVER VOLTAGE S/D Rev.1.0.7 ©2003 Fairchild Semiconductor Corporation

KA5X03XX-SERIES Absolute Maximum Ratings (Ta=25°C, unless otherwise specified) Characteristic Symbol Value Unit KA5H0365R, KA5M0365R, KA5L0365R Drain-Gate Voltage (RGS=1MΩ) VDGR 650 V Gate-Source (GND) Voltage VGS ±30 V Drain Current Pulsed (1) IDM 12.0 ADC Continuous Drain Current (TC=25°C) ID 3.0 ADC Continuous Drain Current (TC=100°C) ID 2.4 ADC Single Pulsed Avalanche Energy (2) EAS 358 mJ Maximum Supply Voltage VCC,MAX 30 V Analog Input Voltage Range VFB -0.3 to VSD V PD 75 W Total Power Dissipation Derating 0.6 W/°C Operating Junction Temperature. TJ +150 °C Operating Ambient Temperature. TA -40 to +85 °C Storage Temperature Range. TSTG -55 to +150 °C KA5H0380R, KA5M0380R, KA5L0380R Drain-Gate Voltage (RGS=1MΩ) VDGR 800 V Gate-Source (GND) Voltage VGS ±30 V Drain Current Pulsed (1) IDM 12.0 ADC Continuous Drain Current (TC=25°C) ID 3.0 ADC Continuous Drain Current (TC=100°C) ID 2.1 ADC Single Pulsed Avalanche Energy (2) EAS 95 mJ Maximum Supply Voltage VCC,MAX 30 V Analog Input Voltage Range VFB -0.3 to VSD V PD 75 W Total Power Dissipation Derating 0.6 W/°C Operating Junction Temperature. TJ +150 °C Operating Ambient Temperature. TA -40 to +85 °C Storage Temperature Range. TSTG -55 to +150 °C Note: 1. Repetitive rating: Pulse width limited by maximum junction temperature 2. L = 51mH, starting Tj = 25°C 3. L = 13μH, starting Tj = 25°C 2

KA5X03XX-SERIES Electrical Characteristics (SenseFET Part) (Ta = 25°C unless otherwise specified) Parameter Symbol Condition Min. Typ. Max. Unit KA5H0365R, KA5M0365R, KA5L0365R Drain-Source Breakdown Voltage BVDSS VGS=0V, ID=50μA 650 - - V VDS=Max. Rating, VGS=0V - - 50 μA Zero Gate Voltage Drain Current IDSS VDS=0.8Max. Rating, - - 200 μA VGS=0V, TC=125°C Static Drain-Source on Resistance (Note) RDS(ON) VGS=10V, ID=0.5A - 3.6 4.5 Ω Forward Transconductance (Note) gfs VDS=50V, ID=0.5A 2.0 - - S Input Capacitance Ciss - 720 - VGS=0V, VDS=25V, Output Capacitance Coss - 40 - pF f=1MHz Reverse Transfer Capacitance Crss - 40 - Turn On Delay Time td(on) VDD=0.5BVDSS, ID=1.0A - 150 - (MOSFET switching Rise Time tr - 100 - time is essentially nS Turn Off Delay Time td(off) - 150 - independent of Fall Time tf operating temperature) - 42 - Total Gate Charge VGS=10V, ID=1.0A, Qg - - 34 (Gate-Source+Gate-Drain) VDS=0.5BVDSS (MOSFET switching time is essentially nC Gate-Source Charge Qgs - 7.3 - independent of Gate-Drain (Miller) Charge Qgd operating temperature) - 13.3 - KA5H0380R, KA5M0380R, KA5L0380R Drain-Source Breakdown Voltage BVDSS VGS=0V, ID=50μA 800 - - V VDS=Max. Rating, VGS=0V - - 250 μA Zero Gate Voltage Drain Current IDSS VDS=0.8Max. Rating, - - 1000 μA VGS=0V, TC=125°C Static Drain-Source on Resistance (Note) RDS(ON) VGS=10V, ID=0.5A - 4.0 5.0 Ω Forward Transconductance (Note) gfs VDS=50V, ID=0.5A 1.5 2.5 - S Input Capacitance Ciss - 779 - VGS=0V, VDS=25V, Output Capacitance Coss - 75.6 - pF f=1MHz Reverse Transfer Capacitance Crss - 24.9 - Turn On Delay Time td(on) VDD=0.5BVDSS, ID=1.0A - 40 - (MOSFET switching Rise Time tr - 95 - time is essentially nS Turn Off Delay Time td(off) - 150 - independent of Fall Time tf operating temperature) - 60 - Total Gate Charge VGS=10V, ID=1.0A, Qg - - 34 (Gate-Source+Gate-Drain) VDS=0.5BVDSS (MOSFET switching time is nC Gate-Source Charge Qgs - 7.2 - essentially independent of Gate-Drain (Miller) Charge Qgd operating temperature) - 12.1 - Note: 1. Pulse test: Pulse width ≤ 300μS, duty ≤ 2% 2. 1 S = ---- R 3

KA5X03XX-SERIES Electrical Characteristics (Control Part) (Continued) (Ta = 25°C unless otherwise specified) Characteristic Symbol Test condition Min. Typ. Max. Unit UVLO SECTION Start Threshold Voltage VSTART VFB=GND 14 15 16 V Stop Threshold Voltage VSTOP VFB=GND 8.4 9 9.6 V OSCILLATOR SECTION KA5H0365R Initial Accuracy FOSC 90 100 110 kHz KA5H0380R KA5M0365R Initial Accuracy FOSC 61 67 73 kHz KA5M0380R KA5L0365R Initial Accuracy FOSC 45 50 55 kHz KA5L0380R Frequency Change With Temperature (2) - -25°C≤Ta≤+85°C - ±5 ±10 % KA5H0365R Maximum Duty Cycle Dmax 62 67 72 % KA5H0380R KA5M0365R KA5M0380R Maximum Duty Cycle Dmax 72 77 82 % KA5L0365R KA5L0380R FEEDBACK SECTION Feedback Source Current IFB Ta=25°C, 0V<Vfb<3V 0.7 0.9 1.1 mA Shutdown Feedback Voltage VSD Vfb>6.5V 6.9 7.5 8.1 V Shutdown Delay Current Idelay Ta=25°C, 5V≤Vfb≤VSD 4 5 6 μA REFERENCE SECTION Output Voltage (1) Vref Ta=25°C 4.80 5.00 5.20 V Temperature Stability (1)(2) Vref/ΔT -25°C≤Ta≤+85°C - 0.3 0.6 mV/°C CURRENT LIMIT(SELF-PROTECTION)SECTION Peak Current Limit IOVER Max. inductor current 1.89 2.15 2.41 A PROTECTION SECTION Over Voltage Protection VOVP VCC>24V 25 27 29 V Thermal Shutdown Temperature (Tj) (1) TSD - 140 160 - °C TOTAL STANDBY CURRENT SECTION Start-up Current ISTART VCC=14V - 100 170 μA Operating Supply Current IOP VCC<28 - 7 12 mA (Control Part Only) Note: 1. These parameters, although guaranteed, are not 100% tested in production 2. These parameters, although guaranteed, are tested in EDS(water test) process 4

KA5X03XX-SERIES Typical Performance Characteristics(SenseFET part) (KA5H0365R, KA5M0365R, KA5L0365R) 10 10 VGS Top : 15V 10V 8.0V 7.0V 6.0V A] 5.5V A] ent [ B o t t o m : 45..50VV ent [ Curr 1 Curr 1 150 oC n n ai ai Dr Dr I, D @Notes: I, D 25 oC -25oC @Notes: 12.. 3T0C0 = μ 2s5 P ouClse Test 12.. V30D0S μ =s 3P0uVlse Test 0.1 0.1 1 10 2 4 6 8 10 V , Drain-Source Voltage [V] V , Gate-Source Voltage [V] DS GS Figure 1. Output Characteristics Figure 2. Transfer Characteristics 7 6 ] esistance 45 Vgs=10V Current [A] 1 R , [ΩDS(on)Source On-R 23 Vgs=20V everse Drain 0.1 150 oC 25 oC @Notes : ain- @ Note : Tj=25℃ , RR 12.. V30G0S μ =s 0P uVlse Test Dr 1 ID 00 1 2 3 4 5 0.01 0.4 0.6 0.8 1.0 1.2 I,Drain Current [A] V , Source-Drain Voltage [V] D SD Figure 3. On-Resistance vs. Drain Current Figure 4. Source-Drain Diode Forward Voltage 700 C = C + C (C = shorted) 10 600 Ciossss = Cgdss + Cggdd ds VDS=130V 500 Ciss Crss = Cgd e[V] 8 VDS=320V Capacitance [pF] 234000000 Gate-Source Voltag 46 VDS=520V Coss V,GS 2 100 C @ Note : ID=3.0A rss 0 0 100 101 0 5 10 15 20 25 V , Drain-Source Voltage [V] Q ,Total Gate Charge [nC] DS G Figure 5. Capacitance vs. Drain-Source Voltage Figure 6. Gate Charge vs. Gate-Source Voltage 5

KA5X03XX-SERIES Typical Performance Characteristics (Continued) (KA5H0365R, KA5M0365R, KA5L0365R) 1.2 2.5 2.0 BV, (Normalized)DSSDrain-Source Breakdown Voltage011...901 @ N12o.. tVIeDG s=S : =2 500VμA R, (Normalized)DS(on)Drain-Source On-Resistance 011...505 @ 12N.. oVIDtGe =sS: 1=. 51 0AV 0.8 -50 0 50 100 150 0.0 -50 0 50 100 150 TJ, Junction Temperature [oC] TJ, Junction Temperature [oC] Figure 7. Breakdown Voltage vs. Temperature Figure 8. On-Resistance vs. Temperature 102 Operation in This Area 3.0 A] is Limited by R DS(on) [ t 101 100 μs 10 μs 2.5 n re 1 ms A] rain Cur 100 DC10 ms n Current [ 12..50 I , DD 10-1 @ N1o.t eTs := 25 oC I, DraiD 1.0 C 2. T = 150 oC 0.5 J 3. Single Pulse 10-2 0.0 100 101 102 103 25 50 75 100 125 150 V , Drain-Source Voltage [V] T , Case Temperature [oC] DS C Figure 9. Max. Safe Operating Area Figure 10. Max. Drain Current vs. Case Temperature 100 D=0.5 e s n o p s Re 0.2 @ Notes : ermal 0.1 12.. ZDuθJtCy( tF)a=c1t.o2r5, oDC=/tW /Mtax. Th10-1 1 2 , 0.05 3. TJM-TC=PDM*ZθJC(t) ) t ( 0.02 C ZJθ 0.01 single pulse 10-2 10-5 10-4 10-3 10-2 10-1 100 101 t , Square Wave Pulse Duration [sec] 1 Figure 11. Thermal Response 6

KA5X03XX-SERIES Typical Performance Characteristics (Continued) (KA5H0380R, KA5M0380R, KA5L0380R) 101 101 VGS Top : 15V 10V 8.0V 7.0V I, Drain Current [A]D 100 B o t t o m :6554....0505VVVV @ N12..o 3Tte0Cs0 μ:= s2 5P uolCse Test I, Drain Current [A]D 100 25 oC150 oC -25 oC @ 12N.. oV3t0De0sS μ: =s 3P0u Vlse Test 10-1 100 101 10-12 4 6 8 10 V , Drain-Source Voltage [V] V , Gate-Source Voltage [V] DS GS Figure 1. Output Characteristics Figure 2. Thansfer Characteristics Fig3. On-Resistance vs. Drain Current 8 7 10 Vgs=10V R , [Ω]DS(on)Drain-Source On-Resistance 123456 Vgs=20V @ Note : Tj=25℃ I, Reverse Drain Current [A]DR 1 150 oC 25 oC @ N12..o V3te0Gs0S: μ =s 0 PVulse Test 0 0.1 0 1 2 3 4 0.4 0.6 0.8 1.0 I ,Drain Current V , Source-Drain Voltage [V] D SD Figure 3. On-Resistance vs. Drain Current Figure 4. Source-Drain Diode Forward Voltage 1000 Capacitance [pF] 345678900000000000000 Ciss CCCiorssssss === CCCggdsds ++ CCggdd (Cds = shorted) ate-Source Voltage[V] 14680 VDSV=D6S4=04VV0D0VS=160V G 120000 CCorssss V,GS 2 @ Note : ID=3.0A 0 0 100 101 0 5 10 15 20 25 30 VDS, Drain-Source Voltage [V] QG,Total Gate Charge [nC] Figure 5. Capacitance vs. Drain-Source Voltage Figure 6. Gate Charge vs. Gate-Source Voltage 7

KA5X03XX-SERIES Typical Performance Characteristics (Continued) (KA5H0380R, KA5M0380R, KA5L0380R) 1.2 2.5 2.0 BV, (Normalized)DSSDrain-Source Breakdown Voltage 011...901 @ N12o.. tVIeDG s=S : =2 500VμA R, (Normalized)DS(on)Drain-Source On-Resistance 011...505 @ 12N..o VItDeG =sS: =1 .150 AV 0.8 0.0 -50 0 50 100 150 -50 0 50 100 150 TJ, Junction Temperature [oC] TJ, Junction Temperature [oC] Figure 7. Breakdown Voltage vs. Temperature Figure 8. On-Resistance vs. Temperature 102 3.5 Operation in This Area [A] is Limited by R DS(on) 3.0 Current 101 1 ms100 μs 10 μs ent [A] 22..05 in 100 DC10 ms Curr , Dra Drain 1.5 I D 10-1 @ N1o.t eTsC := 25 oC I, D 1.0 2. TJ = 150 oC 0.5 3. Single Pulse 10-2 0.0 101 102 103 40 60 80 100 120 140 VDS , Drain-Source Voltage [V] TC, Case Temperature [oC] Figure 9. Max. Safe Operating Area Figure 10. Max. Drain Current vs. Case Temperature 100 D=0.5 (t) , Thermal Response 10-1 0000....021025 @ N123o...t eZDTsuθJJ tMC:y-( TtFC)a==cP1tD.oM2r*5,Z θoJDCC=/(tWt1 )/Mta2x. ZJCθ 0.01 single pulse 10-2 10-5 10-4 10-3 10-2 10-1 100 101 t , Square Wave Pulse Duration [sec] 1 Figure 11. Thermal Response 8

KA5X03XX-SERIES Typical Performance Characteristics (Control Part) (Continued) (These characteristic graphs are normalized at Ta = 25°C) 1.20 1.20 1.15 1.15 1.10 1.10 1.05 1.05 Fosc 1.00 Ifb1.00 0.95 0.95 0.90 0.90 0.85 0.85 0.80 0.80 -40 -25 0 25 50 75 100 125 150 -40 -25 0 25 50 75 100 125 150 Temperature [℃] Temperature [℃] Figure 1. Operating Frequency Figure 2. Feedback Source Current 1.20 1.50 1.15 1.40 1.10 1.30 1.05 1.20 Iop1.00 Iover1.10 0.95 1.00 0.90 0.90 0.85 0.80 0.80 0.70 -40 -25 0 25 50 75 100 125 150 -40 -25 0 25 50 75 100 125 150 Temperature [℃] Temperature [℃] Figure 3. Operating Supply Current Figure 4. Peak Current Limit 1.30 1.20 1.20 1.15 1.10 1.10 1.05 1.00 Istart Vstart1.00 0.90 0.95 0.80 0.90 0.70 0.85 0.60 0.80 -40 -25 0 25 50 75 100 125 150 -40 -25 0 25 50 75 100 125 150 Temperature [℃] Temperature [℃] Figure 5. Start up Current Figure 6. Start Threshold Voltage 9

KA5X03XX-SERIES Typical Performance Characteristics (Continued) (These characteristic graphs are normalized at Ta = 25°C) 1.20 1.20 1.15 1.15 1.10 1.10 1.05 1.05 Vstop1.00 Dmax1.00 0.95 0.95 0.90 0.90 0.85 0.85 0.80 0.80 -40 -25 0 25 50 75 100 125 150 -40 -25 0 25 50 75 100 125 150 Temperature [℃] Temperature [℃] Figure 7. Stop Threshold Voltage Figure 8. Maximum Duty Cycle 1.20 1.20 1.15 1.15 1.10 1.10 1.05 1.05 Vz1.00 Vsd1.00 0.95 0.95 0.90 0.90 0.85 0.85 0.80 0.80 -40 -25 0 25 50 75 100 125 150 -40 -25 0 25 50 75 100 125 150 Temperature [℃] Temperature [℃] Figure 9. VCC Zener Voltage Figure 10. Shutdown Feedback Voltage 1.20 1.20 1.15 1.15 1.10 1.10 1.05 1.05 Idelay1.00 Vovp1.00 0.95 0.95 0.90 0.90 0.85 0.85 0.80 0.80 -40 -25 0 25 50 75 100 125 150 -40 -25 0 25 50 75 100 125 150 Temperature [℃] Temperature [℃] Figure 11. Shutdown Delay Current Figure 12. Over Voltage Protection 10

KA5X03XX-SERIES Typical Performance Characteristics (Continued) (These characteristic graphs are normalized at Ta = 25°C) 3.00 2.50 2.00 Rds(on)1.50 1.00 0.50 0.00 -40 -25 0 25 50 75 100 125 150 Temperature [℃] Figure13. Static Drain-Source on Resistance 11

KA5X03XX-SERIES Package Dimensions TO-220F-4L 12

KA5X03XX-SERIES Package Dimensions (Continued) TO-220F-4L(Forming) 13

KA5X03XX-SERIES Ordering Information Product Number Package Marking Code BVDSS FOSC RDS(on) KA5H0365RTU TO-220F-4L 5H0365R 650V 100kHz 3.6Ω KA5H0365RYDTU TO-220F-4L(Forming) KA5M0365RTU TO-220F-4L 5M0365R 650V 67kHz 3.6Ω KA5M0365RYDTU TO-220F-4L(Forming) KA5L0365RTU TO-220F-4L 5L0365R 650V 50kHz 3.6Ω KA5L0365RYDTU TO-220F-4L(Forming) Product Number Package Marking Code BVDSS FOSC RDS(on) KA5H0380RTU TO-220F-4L 5H0380R 800V 100kHz 4.6Ω KA5H0380RYDTU TO-220F-4L(Forming) KA5M0380RTU TO-220F-4L 5M0380R 800V 67kHz 4.6Ω KA5M0380RYDTU TO-220F-4L(Forming) KA5L0380RTU TO-220F-4L 5L0380R 800V 50kHz 4.6Ω KA5L0380RYDTU TO-220F-4L(Forming) TU :Non Forming Type YDTU : Forming type DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems 2. A critical component in any component of a life support which, (a) are intended for surgical implant into the body, device or system whose failure to perform can be or (b) support or sustain life, and (c) whose failure to reasonably expected to cause the failure of the life support perform when properly used in accordance with device or system, or to affect its safety or effectiveness. instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. www.fairchildsemi.com 6/3/08 0.0m 001 Stock#DSxxxxxxxx © 2003 Fairchild Semiconductor Corporation

TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 2Cool FPS PDP SPM The Power Franchise® AccuPower F-PFS Power-SPM Auto-SPM FRFET® PowerTrench® AX-CAP* Global Power ResourceSM PowerXS™ TinyBoost BitSiC® Green FPS Programmable Active Droop Build it Now Green FPS e-Series QFET® TinyBuck TinyCalc CorePLUS Gmax QS TinyLogic® CorePOWER GTO Quiet Series TINYOPTO CROSSVOLT IntelliMAX RapidConfigure TinyPower CTL ISOPLANAR  TinyPWM CDEurUreXnPt ETEraDn®s fer Logic Makianngd S Bmeattlel rS™pe akers Sound Louder SSaigvninaglW oiusre wo rld, 1mW/W/kW at a time™ TTirnaynWSiiCre® Dual Cool™ MegaBuck EcoSPARK® MICROCOUPLER SSMmAarRtMT aSxTA RT TTrRiFUaEuClt UDReRteEcNtT ®* EfficientMax MicroFET SPM® SerDes ESBC MicroPak STEALTH Fairc®hi ld® MMiilclerorDPraivke2 SSuuppeerrSFOETT® -3 UHC® MotionMax Fairchild Semiconductor® SuperSOT-6 Ultra FRFET Motion-SPM FACT Quiet Series SuperSOT-8 UniFET FACT® mWSaver SupreMOS® VCX FFAasStTvC® ore OOOPpPtTToOOHPLiTOLAG NICA®R ® SSyynnccF-LEoTck™ VVioslutaaglMePalxus FETBench XS™ FlashWriter®* ®* ® * Trademarks of System General Corporation, used under license by Fairchild Semiconductor. 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