J309, J310 Preferred Device JFET VHF/UHF Amplifiers N−Channel — Depletion Features • Pb−Free Packages are Available* http://onsemi.com 1 DRAIN MAXIMUM RATINGS Rating Symbol Value Unit 3 Drain−Source Voltage VDS 25 Vdc GATE Gate−Source Voltage VGS 25 Vdc Forward Gate Current IGF 10 mAdc 2 SOURCE Total Device Dissipation @ TA = 25°C PD 350 mW Derate above = 25°C 2.8 mW/°C Junction Temperature Range TJ −65 to +125 °C Storage Temperature Range Tstg −65 to +150 °C Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are TO−92 exceeded, device functional operation is not implied, damage may occur and CASE 29−11 reliability may be affected. 12 STYLE 5 3 MARKING DIAGRAM J3xx AYWW(cid:2) (cid:2) J3xx =Device Code xx = 09 or 10 A =Assembly Location Y =Year WW =Work Week (cid:2) =Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 3 of this data sheet. Preferred devices are recommended choices for future use *For additional information on our Pb−Free strategy and soldering details, please and best overall value. download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2006 1 Publication Order Number: March, 2006 − Rev. 1 J309/D

J309, J310 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Gate−Source Breakdown Voltage V(BR)GSS −25 − − Vdc (IG = −1.0 (cid:2)Adc, VDS = 0) Gate Reverse Current IGSS (VGS = −15 Vdc, VDS = 0, TA = 25°C) − − −1.0 nAdc (VGS = −15 Vdc, VDS = 0, TA = +125°C) − − −1.0 (cid:2)Adc Gate Source Cutoff Voltage VGS(off) Vdc (VDS = 10 Vdc, ID = 1.0 nAdc) J309 −1.0 − −4.0 J310 −2.0 − −6.5 ON CHARACTERISTICS Zero−Gate−Voltage Drain Current(1) IDSS mAdc (VDS = 10 Vdc, VGS = 0) J309 12 − 30 J310 24 − 60 Gate−Source Forward Voltage VGS(f) − − 1.0 Vdc (VDS = 0, IG = 1.0 mAdc) SMALL−SIGNAL CHARACTERISTICS Common−Source Input Conductance Re(yis) mmhos (VDS = 10 Vdc, ID = 10 mAdc, f = 100 MHz) J309 − 0.7 − J310 − 0.5 − Common−Source Output Conductance Re(yos) − 0.25 − mmhos (VDS = 10 Vdc, ID = 10 mAdc, f = 100 MHz) Common−Gate Power Gain Gpg − 16 − dB (VDS = 10 Vdc, ID = 10 mAdc, f = 100 MHz) Common−Source Forward Transconductance Re(yfs) − 12 − mmhos (VDS = 10 Vdc, ID = 10 mAdc, f = 100 MHz) Common−Gate Input Conductance Re(yig) − 12 − mmhos (VDS = 10 Vdc, ID = 10 mAdc, f = 100 MHz) Common−Source Forward Transconductance gfs (cid:2)mhos (VDS = 10 Vdc, ID = 10 mAdc, f = 1.0 kHz) J309 10000 − 20000 J310 8000 − 18000 Common−Source Output Conductance gos − − 250 (cid:2)mhos (VDS = 10 Vdc, ID = 10 mAdc, f = 1.0 kHz) Common−Gate Forward Transconductance gfg (cid:2)mhos (VDS = 10 Vdc, ID = 10 mAdc, f = 1.0 kHz) J309 − 13000 − J310 − 12000 − Common−Gate Output Conductance gog (cid:2)mhos (VDS = 10 Vdc, ID = 10 mAdc, f = 1.0 kHz) J309 − 100 − J310 − 150 − Gate−Drain Capacitance Cgd − 1.8 2.5 pF (VDS = 0, VGS = −10 Vdc, f = 1.0 MHz) Gate−Source Capacitance Cgs − 4.3 5.0 pF (VDS = 0, VGS = −10 Vdc, f = 1.0 MHz) FUNCTIONAL CHARACTERISTICS Equivalent Short−Circuit Input Noise Voltage en − 10 − nV(cid:2)(cid:3)Hz (VDS = 10 Vdc, ID = 10 mAdc, f = 100 Hz) 1. Pulse Test: Pulse Width (cid:4) 300 (cid:2)s, Duty Cycle (cid:4) 3.0%. http://onsemi.com 2

J309, J310 ORDERING INFORMATION Device Package Shipping† J309 TO−92 J309G TO−92 1000 Units / Bulk (Pb−Free) J310 TO−92 J310G TO−92 1000 Units / Bulk (Pb−Free) J310RLRP TO−92 J310RLRPG TO−92 2000 Units / Tape & Ammo Box (Pb−Free) J310ZL1 TO−92 J310ZL1G TO−92 2000 Units / Tape & Ammo Box (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 70 70 os) 35 A) mh m m A) 60 VDS = 10 V TA = −(cid:2)55°C 60 RENT ( NCE ( 30 Vf =D S1 .=0 1M0H Vz TA = −(cid:2)55°C +(cid:2)25°C RRENT (m 5400 I+D(cid:2)2S5S°C +(cid:2)25°C 5400 RAIN CUR ONDUCTA 2250 , DRAIN CUID 321000 −(cid:2)55°+C(cid:2)25°C++115500°°CC 321000 , SATURATION DSS FORWARD TRANSC511.500 −(cid:2)5+51°5C0°C+150°+C(cid:2)25°C ID , s 0 Yf 0 −5.0 −4.0 −3.0 −2.0 −1.0 0 5.0 4.0 3.0 2.0 1.0 0 ID − VGS, GATE−SOURCE VOLTAGE (VOLTS) VGS, GATE−SOURCE VOLTAGE (VOLTS) IDSS − VGS, GATE−SOURCE CUTOFF VOLTAGE (VOLTS) Figure 1. Drain Current and Transfer Figure 2. Forward Transconductance Characteristics versus Gate−Source Voltage versus Gate−Source Voltage http://onsemi.com 3

J309, J310 os)100 k 1.0 k 10 120 h m μD TRANSCONDUCTANCE ( 11.00 kk VGS(ofYf) f=s −(cid:2)2.3 V = Yfs 11000μTPUT ADMITTANCE ( mhos) CAPACITANCE (pF)74..00 RDSCgs 974628ON RESISTANCE (OHMS) AR Yos VGS(off) = −(cid:2)5.7 V = OU , S ORW , Yos Cgd 24RD F 1.0 , s Yf 100 1.0 0 0 0.01 0.10.20.30.5 1.0 2.03.05.0 10 2030 50 100 10 9.0 8.0 7.0 6.0 5.0 4.0 3.0 2.0 1.0 0 ID, DRAIN CURRENT (mA) VGS, GATE SOURCE VOLTAGE (VOLTS) Figure 3. Common−Source Output Figure 4. On Resistance and Junction Admittance and Forward Transconductance Capacitance versus Gate−Source Voltage versus Drain Current |S21|, |S11| |S12|, |S22| 30 3.0 0.85 0.45 0.060 1.00 24 VDS = 10 V 2.4 0.79 0.39 S22 0.048 0.98 | (mmhos)22 18 ITDA == 1205 °mCA Y11 1.8mhos) 0.73 0.33 VIDD =S 1=0 1 m0 AV S21 0.036 0.96 Y|, |Y21 12 Y21 1.2Y(m12 0.67 0.27 TA = 25°C 0.024 0.94 |Y|, |11 6.0 Y22 0.6 0.61 0.21 S11 0.012 0.92 Y12 S12 0 0.55 0.15 0.90 100 200 300 500 700 1000 100 200 300 500 700 1000 f, FREQUENCY (MHz) f, FREQUENCY (MHz) Figure 5. Common−Gate Y Parameter Figure 6. Common−Gate S Parameter Magnitude versus Frequency Magnitude versus Frequency (cid:3)21, (cid:3)11 (cid:3)12, (cid:3)22 (cid:3)11, (cid:3)12 (cid:3)21, (cid:3)22 180° 50° −(cid:2)20° 87° −(cid:2)20° 120° 0 (cid:3) (cid:3)22 −(cid:2)20° 11 (cid:3) 170° 40° (cid:3) −(cid:2)40° 86° −(cid:2)40° 100° 21 (cid:3)22 −(cid:2)20° 21 −(cid:2)60° 160° 30° −(cid:2)80° 85° −(cid:2)60° 80° −(cid:2)40° −(cid:2)100° 150° 20° (cid:3)12 −(cid:2)120° 84° −(cid:2)80° 60° (cid:3)21 −(cid:2)60° (cid:3) −(cid:2)140° (cid:3) 11 12 140° 10° VDS = 10 V −(cid:2)160° 83° −(cid:2)100° 40° VDS = 10 V (cid:3) −(cid:2)80° ITDA == 1205 °mCA −(cid:2)180° ITDA == 1205 °mCA 11 130° 0° −(cid:2)200° 82° −(cid:2)120° 20° −(cid:2)100° 100 200 300 500 700 1000 100 200 300 500 700 1000 f, FREQUENCY (MHz) f, FREQUENCY (MHz) Figure 7. Common−Gate Y Parameter Figure 8. S Parameter Phase−Angle Phase−Angle versus Frequency versus Frequency http://onsemi.com 4

J309, J310 PACKAGE DIMENSIONS TO−92 (TO−226) CASE 29−11 ISSUE AL A NOTES: B 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. R 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND P BEYOND DIMENSION K MINIMUM. L SEATING INCHES MILLIMETERS PLANE K DIM MIN MAX MIN MAX A 0.175 0.205 4.45 5.20 B 0.170 0.210 4.32 5.33 C 0.125 0.165 3.18 4.19 X X D GD 00..001465 00..002515 0.14.0175 0.15.3339 G H 0.095 0.105 2.42 2.66 H J J 0.015 0.020 0.39 0.50 K 0.500 −−− 12.70 −−− V C L 0.250 −−− 6.35 −−− N 0.080 0.105 2.04 2.66 SECTION X−X P −−− 0.100 −−− 2.54 1 N R 0.115 −−− 2.93 −−− V 0.135 −−− 3.43 −−− N STYLE 5: PIN 1. DRAIN 2. SOURCE 3. GATE ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: N. American Technical Support: 800−282−9855 Toll Free ON Semiconductor Website: http://onsemi.com Literature Distribution Center for ON Semiconductor USA/Canada P.O. Box 61312, Phoenix, Arizona 85082−1312 USA Order Literature: http://www.onsemi.com/litorder Phone: 480−829−7710 or 800−344−3860 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center Fax: 480−829−7709 or 800−344−3867 Toll Free USA/Canada 2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051 For additional information, please contact your Email: orderlit@onsemi.com Phone: 81−3−5773−3850 local Sales Representative. http://onsemi.com J309/D 5