1200V XPTTM IGBT IXYJ20N120C3D1 V = 1200V CES GenX3TM w/ Diode I = 9A C110 V (cid:3)(cid:3)(cid:3)(cid:3)(cid:3)(cid:3)(cid:3)(cid:3)(cid:3)(cid:3)(cid:100)(cid:100)(cid:100)(cid:100)(cid:100) (cid:3)(cid:3)(cid:3)(cid:3)(cid:3)3.4V (Electrically Isolated Tab) CE(sat) t = 108ns fi(typ) High-Speed IGBT for 20-50 kHz Switching ISO TO-247TM E153432 Symbol Test Conditions Maximum Ratings V T = 25°C to 150°C 1200 V CES J V T = 25°C to 150°C, R = 1M(cid:58) 1200 V CGR J GE V Continuous ±20 V G GES C V Transient ±30 V E Isolated Tab GEM I T = 25°C 21 A C25 C I T = 110°C 9 A G = Gate C = Collector IC110 TC = 110°C 15 A E = Emitter F110 C I T = 25°C, 1ms 84 A CM C I T = 25°C 10 A A C E T = 25°C 400 mJ AS C Features SSOA V = 15V, T = 150°C, R = 10(cid:58) I = 40 A GE VJ G CM (RBSOA) Clamped Inductive Load @V (cid:100) V (cid:122) Optimized for Low Switching Losses CE CES (cid:122) Silicon Chip on Direct-Copper Bond P T = 25°C 105 W (DCB) Substrate C C (cid:122) Isolated Mounting Surface T -55 ... +150 °C J (cid:122) 2500V~ Electrical Isolation T 150 °C JM (cid:122) Square RBSOA T -55 ... +150 °C stg (cid:122) Positive Thermal Coefficient of T Maximum Lead Temperature for Soldering 300 °C Vce(sat) L (cid:122) Anti-Parallel Ultra Fast Diode T 1.6 mm (0.062in.) from Case for 10s 260 °C SOLD (cid:122) Avalanche Rated M Mounting Torque 1.13/10 Nm/lb.in. d V 50/60 Hz, RM, t = 1min 2500 V~ ISOL Advantages Weight 5 g (cid:122) High Power Density (cid:122) Low Gate Drive Requirement Symbol Test Conditions Characteristic Values Applications (T = 25(cid:113)C, Unless Otherwise Specified) Min. Typ. Max. J (cid:122) High Frequency Power Inverters BVCES IC = 250(cid:80)A, VGE = 0V 1200 V (cid:122) UPS V I = 250(cid:80)A, V = V 3.0 5.0 V (cid:122) Motor Drives GE(th) C CE GE (cid:122) SMPS I V = V ,V = 0V 25 (cid:80)A (cid:122) PFC Circuits CES CE CES GE T = 125(cid:113)C 350 (cid:122)A (cid:122) Battery Chargers J (cid:122) Welding Machines I V = 0V, V = (cid:114)20V (cid:3)(cid:3)(cid:3)(cid:3)(cid:3)(cid:3)(cid:3)(cid:3)(cid:3)(cid:3)(cid:3)(cid:3)(cid:3)(cid:114)100 nA GES CE GE (cid:122) Lamp Ballasts V I = 20A, V = 15V, Note 1 3.4 V CE(sat) C GE T = 150(cid:113)C 4.0 V J © 2013 IXYS CORPORATION, All Rights Reserved DS100486B(8/13)

IXYJ20N120C3D1 Symbol Test Conditions Characteristic Values ISO TO-247 (IXYJ) OUTLINE (T = 25°C Unless Otherwise Specified) Min. Typ. Max. J g I = 20A, V = 10V, Note 1 7.0 11.5 S fs C CE C 1110 pF ies C V = 25V, V = 0V, f = 1MHz 120 pF oes CE GE C 27 pF res Q 53 nC g(on) Q I = 20A, V = 15V, V = 0.5 • V 9 nC ge C GE CE CES Q 22 nC gc t 20 ns PINS: d(on) t Inductive load, T = 25°C 29 ns 1 = Gate ri J 2 = Collector E I = 20A, V = 15V 1.3 mJ 3 = Emitter on C GE 4 = Isolated t V = 0.5 • V , R = 10(cid:58) 90 ns d(off) CE CES G t 108 ns fi Note 2 E 0.5 1.0 mJ off t 20 ns d(on) t Inductive load, T = 150°C 40 ns ri J E I = 20A, V = 15V 3.7 mJ on C GE t V = 0.5 • V , R = 10(cid:58) 115 ns d(off) CE CES G t Note 2 105 ns fi E 0.7 mJ off R 1.19 °C/W thJC R 0.15 °C/W thCS Reverse Diode (FRED) (T = 25°C, Unless Otherwise Specified) Characteristic Value J Symbol Test Conditions Min. Typ. Max. V 3.00 V F I = 30A,V = 0V, Note 1 F GE T = 150°C 1.75 V J I 9 A RM I = 30A,V = 0V, -di /dt = 100A/(cid:122)s, T = 100°C F GE F J t V = 600V T = 1 0 0 ° C 195 ns rr R J R 1.25 °C/W thJC Notes: 1. Pulse test, t (cid:100) 300(cid:122)s, duty cycle, d (cid:100) 2%. 2. Switching times & energy losses may increase for higher V (clamp), T or R . CE J G IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents:4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B27,071,537

IXYJ20N120C3D1 Fig. 1. Output Characteristics @ TJ = 25ºC Fig. 2. Extended Output Characteristics @ TJ = 25ºC 40 100 VGE = 15V VGE = 15V 35 13V 11V 10V 80 30 9V 13V 12V I - AmperesC 122505 8V - AmperesC 4600 11V10V I 9V 10 7V 8V 20 5 7V 6V 6V 0 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 0 5 10 15 20 25 30 VCE - Volts VCE - Volts Fig. 4. Dependence of VCE(sat) on Fig. 3. Output Characteristics @ TJ = 150ºC Junction Temperature 40 2.4 35 V G E = 1 135VV VGE = 15V 11V 2.0 10V 30 I C = 40A 9V ed z peres 25 ormali 1.6 I - AmC 1250 8V - NE(sat) 1.2 I C = 20A C V 7V 10 0.8 I C = 10A 5 6V 0 5V 0.4 0 1 2 3 4 5 6 7 8 -50 -25 0 25 50 75 100 125 150 175 VCE - Volts TJ - Degrees Centigrade Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage Fig. 6. Input Admittance 11 50 TJ = - 40ºC 45 TJ = 25ºC 25ºC 150ºC 9 40 35 s V - VoltsCE 57 I C = 40A - AmpereC 223050 I 20A 15 3 10 10A 5 1 0 6 7 8 9 10 11 12 13 14 15 3.5 4.5 5.5 6.5 7.5 8.5 9.5 10.5 VGE - Volts VGE - Volts © 2013 IXYS CORPORATION, All Rights Reserved

IXYJ20N120C3D1 Fig. 7. Transconductance Fig. 8. Gate Charge 16 16 TJ = - 40ºC 14 14 VCE = 600V I C = 20A 12 12 I G = 10mA 25ºC s emen 10 150ºC olts 10 g - Si f s 68 V - VGE 68 4 4 2 2 0 0 0 5 10 15 20 25 30 35 40 45 50 0 5 10 15 20 25 30 35 40 45 50 55 IC - Amperes QG - NanoCoulombs Fig. 9. Capacitance Fig. 10. Reverse-Bias Safe Operating Area 10,000 f = 1 MHz 40 s d a ar F1,000 30 o s Pic Cies ere e - mp c A citan I - C 20 pa 100 a Coes C 10 TJ = 150ºC RG = 10(cid:159) Cres dv / dt < 10V / ns 10 0 0 5 10 15 20 25 30 35 40 200 400 600 800 1000 1200 VCE - Volts VCE - Volts Fig. 11. Maximum Transient Thermal Impedance (IGBT) 10 1 W C / - ºC 0.1 h)J Z(t 0.01 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width - Seconds IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

IXYJ20N120C3D1 Fig. 12. Inductive Switching Energy Loss vs. Fig. 13. Inductive Switching Energy Loss vs. Gate Resistance Collector Current 2 20 1.4 12 Eoff Eon - - - - Eoff Eon - - - - TJ = 150ºC , VGE = 15V 1.2 RG = 10(cid:159) , VGE = 15V 10 1.6 16 VCE = 600V VCE = 600V 1.0 8 s E s E E - MilliJouleoff01..82 I C = 40A 812on - MilliJoules E - MilliJouleoff 00..68 TJ = 150ºC 46 on - MilliJoules I C = 20A TJ = 25ºC 0.4 4 0.4 2 0 0 0.2 0 10 15 20 25 30 35 40 45 50 55 20 22 24 26 28 30 32 34 36 38 40 RG - Ohms IC - Amperes Fig. 14. Inductive Switching Energy Loss vs. Fig. 15. Inductive Turn-off Switching Times vs. Junction Temperature Gate Resistance 1.4 12 180 360 Eoff Eon - - - - 160 t f i td(off) - - - - 320 1.2 RG = 10(cid:159) , VGE = 15V 10 TJ = 150ºC, VGE = 15V VCE = 600V 140 VCE = 600V 280 E - MilliJoulesoff001...680 I C I =C 2=0 4A0A 468 onE - MilliJoules t - Nanoseconds f i1102680000 I C = 20A I C = 40A 112226040000 d(off)t - Nanoseconds 0.4 2 40 80 0.2 0 20 40 25 50 75 100 125 150 10 15 20 25 30 35 40 45 50 55 TJ - Degrees Centigrade RG - Ohms Fig. 16. Inductive Turn-off Switching Times vs. Fig. 17. Inductive Turn-off Switching Times vs. Collector Current Junction Temperature 140 130 160 140 t f i td(off) - - - - 140 t f i td(off) - - - - 130 120 RG = 10(cid:159) , VGE = 15V 120 RG = 10(cid:159) , VGE = 15V t - Nanoseconds f i1068000 TJ = 25ºCTJ = 150ºC VCE = 600V 91100100 d(off)t - Nanoseconds t - Nanosecondsf i 1102680000 VCE = 600V I C = 20A 91110012000 d(off)t - Nanosecond s I C = 40A 40 80 40 80 20 70 20 70 20 22 24 26 28 30 32 34 36 38 40 25 50 75 100 125 150 IC - Amperes TJ - Degrees Centigrade © 2013 IXYS CORPORATION, All Rights Reserved

IXYJ20N120C3D1 Fig. 18. Inductive Turn-on Switching Times vs. Fig. 19. Inductive Turn-on Switching Times vs. Gate Resistance Collector Current 280 50 200 24 t r i td(on) - - - - t r i td(on) - - - - 240 45 TJ = 150ºC, VGE = 15V 160 RG = 10(cid:159) , VGE = 15V 23 VCE = 600V VCE = 600V t - Nanoseconds r i11226080000 I C = 40A I C = 20A 23345050 d(on)t - Nanoseconds t - Nanosecondsr i 12800 TJ = 150ºC 2212 d(on)t - Nanoseconds 40 20 40 20 TJ = 25ºC 0 15 0 19 10 15 20 25 30 35 40 45 50 55 20 22 24 26 28 30 32 34 36 38 40 RG - Ohms IC - Amperes Fig. 20. Inductive Turn-on Switching Times vs. Junction Temperature Fig. 21. Maximum Peak Load Current vs. Frequency 200 27 45 t r i td(on) - - - - 40 Triangular Wave TJ = 150ºC 160 RG = 10(cid:159) , VGE = 15V 25 TC = 75ºC VCE = 600V 35 VCE = 600V noseconds120 I C = 40A 23 d(on)t - Nan mperes 2350 Square Wave RDVGG = E= 0 = .15 01(cid:525)5V t - Nar i 80 21 osecond I - AC 1250 I C = 20A s 40 19 10 5 0 17 0 25 50 75 100 125 150 0.1 1 10 100 1000 TJ - Degrees Centigrade fmax - KiloHertzs Fig. 22. Maximum Transient Thermal Impedance (Diode) 10 1 W C / - ºC h)J Z(t 0.1 0.01 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: IXY_20N120C3(4L) 9-06-13-C

IXYJ20N120C3D1 Fig. 23. Forward Current IF vs VF Fig. 24. Reverse Recovery Charge QRM vs. -diF/dt 70 5 TVJ = 100ºC 60 VR = 600V 4 50 TVJ = 150ºC IF = 60A 100ºC 3 40 25ºC IF QRM [A] [μC] 30A 30 2 15A 20 1 10 0 0 0 0.5 1 1.5 2 2.5 3 3.5 4 100 500 1000 V [V] F -di /dt [A/μs] F Fig. 25. Peak Reverse Current IRM vs. -diF/dt Fig. 26. Dynamic Parameters QRM, IRM vs. TVJ 60 2 TVJ = 100ºC 50 VR = 600V d] 1.5 e 40 aliz m IRM IF = 60A, 30A, 15A nor [A] 30 [M 1 QR IRM & 20 M R I 0.5 QRM 10 0 0 0 200 400 600 800 1000 20 40 60 80 100 120 140 160 -diF/dt [A/μs] TVJ [ºC] Fig. 27. Recovery Time trr vs. -diF/dt Fig. 28. Peak Forward Voltage VFR, trr vs -diF/dt 220 120 1.2 TVJ = 100ºC TVJ = 100ºC 200 VR = 600V 100 IF = 30A 1 80 trr 0.8 180 trr [ns] IF = 60A VFR 60 0.6 trr 30A [V] [μs] 160 15A VFR 40 0.4 140 20 0.2 120 0 0 0 200 400 600 800 1000 0 100 200 300 400 500 600 700 800 900 1000 -diF/dt [A/μs] -diF/dt [A/μs] © 2013 IXYS CORPORATION, All Rights Reserved