Preliminary Technical Information XPTTM 650V IGBTs IXXK160N65B4 V = 650V CES GenX4TM IXXX160N65B4 I = 160A C110 V ≤≤≤≤≤ 1.80V CE(sat) t = 90ns Extreme Light Punch Through fi(typ) IGBT for 10-30kHz Switching TO-264 (IXXK) Symbol Test Conditions Maximum Ratings V T = 25°C to 175°C 650 V G CES J C V T = 25°C to 175°C, R = 1MΩ 650 V E CGR J GE Tab V Continuous ±20 V GES V Transient ±30 V GEM PLUS247 (IXXX) I T = 25°C (Chip Capability) 310 A C25 C I Leads Current Limit 160 A LRMS I T = 110°C 160 A C110 C I T = 25°C, 1ms 860 A CM C SSOA V = 15V, T = 150°C, R = 1Ω I = 320 A G G GE VJ G CM C Tab (RBSOA) Clamped Inductive Load @V ≤ V E CE CES t V = 15V, V = 360V, T = 150°C 10 μs sc GE CE J G = Gate E = Emitter (SCSOA) R = 10Ω, Non Repetitive G C = Collector Tab = Collector P T = 25°C 940 W C C T -55 ... +175 °C J T 175 °C Features JM T -55 ... +175 °C stg (cid:122) Optimized for 10-30kHz Switching T Maximum Lead Temperature for Soldering 300 °C L (cid:122) Square RBSOA T 1.6 mm (0.062in.) from Case for 10s 260 °C SOLD (cid:122) Short Circuit Capability M Mounting Torque (TO-264) 1.13/10 Nm/lb.in. (cid:122) International Standard Packages d (cid:122) High Current Handling Capability F Mounting Force (PLUS247) 20..120 /4.5..27 N/lb. C Weight TO-264 10 g PLUS247 6 g Advantages (cid:122) High Power Density (cid:122) Low Gate Drive Requirement Symbol Test Conditions Characteristic Values Applications (T = 25°C, Unless Otherwise Specified) Min. Typ. Max. J (cid:122) Power Inverters BV I = 250μA, V = 0V 650 V CES C GE (cid:122) UPS V I = 250μA, V = V 4.0 6.5 V (cid:122) Motor Drives GE(th) C CE GE (cid:122) SMPS ICES VCE = VCES, VGE = 0V 25 μA (cid:122) PFC Circuits T = 150°C 1.5 mA (cid:122) Battery Chargers J (cid:122) Welding Machines I V = 0V, V = ±20V ±200 nA GES CE GE (cid:122) Lamp Ballasts V I = 160A, V = 15V, Note 1 1.54 1.80 V CE(sat) C GE T = 150°C 1.85 V J © 2012 IXYS CORPORATION, All Rights Reserved DS100517A(02/13)

IXXK160N65B4 IXXX160N65B4 Symbol Test Conditions Characteristic Values TO-264 Outline (T = 25°C Unless Otherwise Specified) Min. Typ. Max. J g I = 60A, V = 10V, Note 1 40 70 S fs C CE C 8220 pF ies C V = 25V, V = 0V, f = 1MHz 500 pF oes CE GE C 295 pF res Q 425 nC g(on) Q I = 160A, V = 15V, V = 0.5 • V 82 nC ge C GE CE CES Q 193 nC gc t 52 ns d(on) t Inductive load, T = 25°C 64 ns ri J E I = 80A, V = 15V 3.30 mJ on C GE t V = 400V, R = 1Ω 220 ns Terminals: 1 = Gate d(off) CE G 2,4 = Collector t Note 2 90 ns 3 = Emitter fi E 1.88 3.00 mJ off t 43 ns d(on) t Inductive load, T = 150°C 50 ns ri J E I = 80A, V = 15V 4.30 mJ on C GE t V = 400V, R = 1Ω 220 ns d(off) CE G t Note 2 160 ns fi E 2.36 mJ off R 0.16 °C/W thJC R 0.15 °C/W thCS PLUS247TM Outline Notes: 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%. 2. Switching times & energy losses may increase for higher V (clamp), T or R . CE J G Terminals: 1 - Gate 2 - Collector 3 - Emitter Dim. Millimeter Inches PRELIMINARY TECHNICAL INFORMATION Min. Max. Min. Max. The product presented herein is under development. The Technical Specifications offered are derived A 4.83 5.21 .190 .205 A 2.29 2.54 .090 .100 from data gathered during objective characterizations of preliminary engineering lots; but also may yet 1 A 1.91 2.16 .075 .085 contain some information supplied during a pre-production design evaluation. IXYS reserves the right 2 b 1.14 1.40 .045 .055 to change limits, test conditions, and dimensions without notice. b 1.91 2.13 .075 .084 1 b 2.92 3.12 .115 .123 2 C 0.61 0.80 .024 .031 D 20.80 21.34 .819 .840 E 15.75 16.13 .620 .635 e 5.45 BSC .215 BSC L 19.81 20.32 .780 .800 L1 3.81 4.32 .150 .170 Q 5.59 6.20 .220 0.244 R 4.32 4.83 .170 .190 IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents:4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B27,071,537

IXXK160N65B4 IXXX160N65B4 Fig. 1. Output Characteristics @ TJ = 25ºC Fig. 2. Extended Output Characteristics @ TJ = 25ºC 320 350 VGE = 15V VGE = 15V 280 13V 300 12V 12V 11V 11V 10V 10V 240 250 s 200 e s per 9V ere200 Am 160 mp 9V I - C 120 - AC150 I 100 80 8V 8V 40 50 7V 0 0 7V 0 0.5 1 1.5 2 2.5 3 0 1 2 3 4 5 6 7 8 9 10 VCE - Volts VCE - Volts Fig. 4. Dependence of V on CE(sat) Fig. 3. Output Characteristics @ T = 150ºC J Junction Temperature 320 2.2 280 V G E = 1153VV 2.0 VGE = 15V 12V 11V 240 1.8 zed I C = 320A peres200 10V ormali 1.6 m160 N 1.4 I - AC120 9V - CE(sat) 1.2 I C = 160A V 80 1.0 8V 40 0.8 7V I C = 80A 0 6V 0.6 0 0.5 1 1.5 2 2.5 3 3.5 4 -50 -25 0 25 50 75 100 125 150 175 VCE - Volts TJ - Degrees Centigrade Fig. 5. Collector-to-Emitter Voltage vs. Fig. 6. Input Admittance Gate-to-Emitter Voltage 4.5 200 4.0 TJ = 25ºC 180 160 3.5 TJ = - 40ºC 140 25ºC V - VoltsCE 223...050 I C = 320A - AmperesC11028000 TJ = 150ºC I 160A 60 1.5 40 1.0 80A 20 0.5 0 7 8 9 10 11 12 13 14 15 4 5 6 7 8 9 10 VGE - Volts VGE - Volts © 2012 IXYS CORPORATION, All Rights Reserved

IXXK160N65B4 IXXX160N65B4 Fig. 7. Transconductance Fig. 8. Gate Charge 120 16 TJ = - 40ºC 14 VCE = 325V 100 I C = 160A 12 I G = 10mA 80 25ºC mens olts 10 e V g - Si f s 60 150ºC V - GE 68 40 4 20 2 0 0 0 20 40 60 80 100 120 140 160 180 200 0 50 100 150 200 250 300 350 400 450 IC - Amperes QG - NanoCoulombs Fig. 9. Capacitance Fig. 10. Reverse-Bias Safe Operating Area 10,000 350 Cies 300 s d ara 250 F o s c e e - Pi1,000 mper200 c A citan Coes I - C150 a p a 100 C TJ = 150ºC f = 1 MHz Cres 50 RdvG /= d t1 Ω< 10V / ns 100 0 0 5 10 15 20 25 30 35 40 100 200 300 400 500 600 700 Fig. 11. Maximum Transient Thermal Impedance VCE - Volts VCE - Volts 1 Fig. 11. Maximum Transient Thermal Impedance 0.3 aaaa 0.1 W C / - ºC Z(th)J 0.01 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

IXXK160N65B4 IXXX160N65B4 Fig. 12. Inductive Switching Energy Loss vs. Fig. 13. Inductive Switching Energy Loss vs. Gate Resistance Collector Current 5.0 9 3.4 7 4.5 Eoff Eon - - - - 8 Eoff Eon - - - - 3.0 6 TJ = 150ºC , VGE = 15V RG = 1Ω , VGE = 15V 4.0 VCE = 400V 7 VCE = 400V 2.6 5 E - MilliJoulesoff2233....0505 I C = 80A 3456onE - MilliJoules E - MilliJoulesoff112...482 TJ = 150ºCTJ = 25ºC 234onE - MilliJoules 1.5 I C = 40A 2 1.0 1 1.0 1 0.5 0 0.6 0 1 2 3 4 5 6 7 8 9 10 40 50 60 70 80 90 100 RG - Ohms IC - Amperes Fig. 14. Inductive Switching Energy Loss vs. Fig. 15. Inductive Turn-off Switching Times vs. Junction Temperature Gate Resistance 2.8 5.5 260 800 2.6 Eoff Eon - - - - 5.0 240 t f i td(off) - - - - 700 2.4 RG = 1Ω , VGE = 15V 4.5 TJ = 150ºC, VGE = 15V VCE = 400V 220 VCE = 400V 600 E - MilliJoulesoff11122.....46802 I C = 80A 22334.....05050onE - MilliJoules t - Nanoseconds f i112680000 I C = 40A I C = 80A 345000000 d(off) - Nanosecondt s 1.2 1.5 I C = 40A 140 200 1.0 1.0 0.8 0.5 120 100 25 50 75 100 125 150 1 2 3 4 5 6 7 8 9 10 TJ - Degrees Centigrade RG - Ohms Fig. 16. Inductive Turn-off Switching Times vs. Fig. 17. Inductive Turn-off Switching Times vs. Collector Current Junction Temperature 300 280 240 340 t f i td(off) - - - - 220 t f i td(off) - - - - 320 280 RG = 1Ω , VGE = 15V 240 RG = 1Ω , VGE = 15V VCE = 400V 200 VCE = 400V 300 t - Nanoseconds f i222246000 TJ = 25ºC TJ = 150ºC 112260000 d(off) - Nanosecondst t - Nanosecondsf i 111110246800000 I IC C == 4800AA 222220246800000 d(off) - Nanosecondst 200 80 80 180 180 40 60 160 40 50 60 70 80 90 100 25 50 75 100 125 150 IC - Amperes TJ - Degrees Centigrade © 2012 IXYS CORPORATION, All Rights Reserved

IXXK160N65B4 IXXX160N65B4 Fig. 18. Inductive Turn-on Switching Times vs. Fig. 19. Inductive Turn-on Switching Times vs. Gate Resistance Collector Current 140 100 100 70 t r i td(on) - - - - 90 t r i td(on) - - - - 65 120 90 TJ = 150ºC, VGE = 15V RG = 1Ω , VGE = 15V VCE = 400V I C = 80A 80 VCE = 400V 60 100 80 t - Nanoseconds r i 468000 I C = 40A 567000 d(on) - Nanosecondst t - Nanosecondsr i 3456700000 TJ = 2T5Jº C= 150ºC 3445550505 d(on)t - Nanoseconds 20 40 20 30 0 30 10 25 1 2 3 4 5 6 7 8 9 10 40 50 60 70 80 90 100 RG - Ohms IC - Amperes Fig. 20. Inductive Turn-on Switching Times vs. Junction Temperature 90 57 80 t r i td(on) - - - - 54 RG = 1Ω , VGE = 15V 70 VCE = 400V 51 ds60 48 dt t - Nanoseconr i 345000 I C = 80A 344925(on) - Nanosecon d 20 I C = 40A 36 s 10 33 0 30 25 50 75 100 125 150 TJ - Degrees Centigrade IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: IXX_160N65B4(E9)12-12-12

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