PolarP2TM IXTA460P2 V = 500V DSS Power MOSFET IXTP460P2 I = 24A D25 R ≤≤≤≤≤ 270mΩΩΩΩΩ IXTQ460P2 DS(on) N-Channel Enhancement Mode t = 400ns IXTH460P2 Avalanche Rated rr(typ) Fast Intrinsic Diode TO-263 AA (IXTA) TO-220AB (IXTP) TO-3P (IXTQ) G G S D G D D (Tab) S D (Tab) S D (Tab) Symbol Test Conditions Maximum Ratings V T = 25°C to 150°C 500 V DSS J V T = 25°C to 150°C, R = 1MΩ 500 V TO-247 (IXTH) DGR J GS V Continuous ± 30 V GSS V Transient ± 40 V GSM I T = 25°C 24 A D25 C I T = 25°C, Pulse Width Limited by T 50 A G DM C JM D D (Tab) S I T = 25°C 12 A A C E T = 25°C 750 mJ AS C G = Gate D = Drain dv/dt IS ≤ IDM, VDD ≤ VDSS,TJ ≤ 150°C 15 V/ns S = Source Tab = Drain P T = 25°C 480 W D C T -55 ... +150 °C J T 150 °C JM Tstg -55 ... +150 °C Features T Maximum Lead Temperature for Soldering 300 °C TL Plastic Body for 10s 260 °C (cid:122)Avalanche Rated SOLD (cid:122)Fast Intrinsic Diode F Mounting Force TO-263 10..65 / 2.2..14.6 Nm/lb.in. C (cid:122)Dynamic dv/dt Rated M Mounting Torque (TO-220, TO-3P & TO-247) 1.13 / 10 Nm/lb.in. d (cid:122)Low Package Inductance Weight TO-263 2.5 g TO-220 3.0 g TO-3P 5.5 g Advantages TO-247 6.0 g (cid:122)High Power Density (cid:122)Easy to Mount (cid:122)Space Savings Symbol Test Conditions Characteristic Values (T = 25°C, Unless Otherwise Specified) Min. Typ. Max. J BV V = 0V, I = 250μA 500 V Applications DSS GS D V V = V , I = 250μA 2.5 4.5 V GS(th) DS GS D (cid:122)Switch-Mode and Resonant-Mode I V = ± 30V, V = 0V ± 100 nA Power Supplies GSS GS DS (cid:122)DC-DC Converters I V = V , V = 0V 25 μA DSS DS DSS GS (cid:122)Laser Drivers T = 125°C 250 μA J (cid:122)AC and DC Motor Drives R V = 10V, I = 0.5 • I , Note 1 270 mΩ (cid:122)Robotics and Servo Controls DS(on) GS D D25 © 2010 IXYS CORPORATION, All Rights Reserved DS100216B(06/10)

IXTA460P2 IXTP460P2 IXTQ460P2 IXTH460P2 Symbol Test Conditions Characteristic Values (T = 25°C Unless Otherwise Specified) Min. Typ. Max. J g V = 20V, I = 0.5 • I , Note 1 14 24 S fs DS D D25 C 2890 pF iss C V = 0V, V = 25V, f = 1MHz 280 pF oss GS DS C 22 pF rss t 15 ns d(on) Resistive Switching Times t 9 ns r V = 10V, V = 0.5 • V , I = 0.5 • I t GS DS DSS D D 2 5 30 ns d(off) R = 10Ω (External) t G 5 ns f Q 48 nC g(on) Q V = 10V, V = 0.5 • V , I = 0.5 • I 13 nC gs GS DS DSS D D25 Q 16 nC gd R 0.26 °C/W thJC R TO-220 0.50 °C/W thCS R TO-3P & TO-247 0.25 °C/W thCS Source-Drain Diode Symbol Test Conditions Characteristic Values (T = 25°C Unless Otherwise Specified) Min. Typ. Max. J I V = 0V 24 A S GS I Repetitive, Pulse Width Limited by T 96 A SM JM V I = I , V = 0V, Note 1 1.3 V SD F S GS trr IF = 1 2 A , - d i / d t = 1 0 0 A / μ s 400 ns I V = 100V, V = 0V 19.6 A RM R G S Q 3.9 μC RM Note 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents:4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B27,071,537

IXTA460P2 IXTP460P2 IXTQ460P2 IXTH460P2 TO-263 (IXTA) Outline TO-3P (IXTQ) Outline 1.Gate 2.Collector 3.Emitter 4.Collector Bottom Side Dim. Millimeter Inches Min. Max. Min. Max. A 4.06 4.83 .160 .190 b 0.51 0.99 .020 .039 b2 1.14 1.40 .045 .055 c 0.40 0.74 .016 .029 c2 1.14 1.40 .045 .055 D 8.64 9.65 .340 .380 D1 8.00 8.89 .280 .320 E 9.65 10.41 .380 .405 E1 6.22 8.13 .270 .320 e 2.54 BSC .100 BSC L 14.61 15.88 .575 .625 L1 2.29 2.79 .090 .110 L2 1.02 1.40 .040 .055 L3 1.27 1.78 .050 .070 L4 0 0.13 0 .005 TO-247 (IXTH) Outline TO-220 (IXTP) Outline ∅ P 1 2 3 e Terminals: 1 - Gate 2 - Drain 3 - Source Dim. Millimeter Inches Pins: 1 - Gate 2 - Drain Min. Max. Min. Max. 3 - Source A 4.7 5.3 .185 .209 A 2.2 2.54 .087 .102 1 A 2.2 2.6 .059 .098 2 b 1.0 1.4 .040 .055 b 1.65 2.13 .065 .084 1 b 2.87 3.12 .113 .123 2 C .4 .8 .016 .031 D 20.80 21.46 .819 .845 E 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 L 19.81 20.32 .780 .800 L1 4.50 .177 ∅P 3.55 3.65 .140 .144 Q 5.89 6.40 0.232 0.252 R 4.32 5.49 .170 .216 S 6.15 BSC 242 BSC © 2010 IXYS CORPORATION, All Rights Reserved

IXTA460P2 IXTP460P2 IXTQ460P2 IXTH460P2 Fig. 1. Output Characteristics @ T = 25ºC Fig. 2. Extended Output Characteristics @ T = 25ºC J J 25 55 VGS = 10V 50 VGS = 10V 7V 7V 20 45 40 mperes 15 6V mperes 3305 I - AD 10 I - AD 2205 6V 15 5 10 5V 5 5V 0 0 0 1 2 3 4 5 6 7 8 0 5 10 15 20 25 30 VDS - Volts VDS - Volts Fig. 4. R Normalized to I = 12A Value vs. DS(on) D Fig. 3. Output Characteristics @ TJ = 125ºC Junction Temperature 25 3.4 V G S = 170VV 3.0 VGS = 10V 20 2.6 d 6V e mperes 15 Normaliz 12..82 I D = 24A I D = 12A I - AD 10 - S(on) 1.4 D 5V R 1.0 5 0.6 4V 0 0.2 0 5 10 15 20 -50 -25 0 25 50 75 100 125 150 VDS - Volts TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 12A Value vs. Fig. 6. Maximum Drain Current vs. Drain Current Case Temperature 3.8 28 VGS = 10V 3.4 24 3.0 TJ = 125ºC d 20 e z Normali 22..26 mperes16 - S(on)1.8 I - AD12 D R 8 1.4 TJ = 25ºC 1.0 4 0.6 0 0 5 10 15 20 25 30 35 40 45 50 55 -50 -25 0 25 50 75 100 125 150 ID - Amperes TC - Degrees Centigrade IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

IXTA460P2 IXTP460P2 IXTQ460P2 IXTH460P2 Fig. 7. Input Admittance Fig. 8. Transconductance 35 50 30 TJ = - 40ºC 40 25 eres 20 T J = 1- 224550ºººCCC mens 30 25ºC p e I - AmD 15 g - Sif s 20 125ºC 10 10 5 0 0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 0 5 10 15 20 25 30 35 VGS - Volts ID - Amperes Fig. 9. Forward Voltage Drop of Intrinsic Diode Fig. 10. Gate Charge 80 10 70 VDS = 250V I D = 12A 8 60 I G = 10mA eres 50 olts 6 p V Am 40 - S I - S 30 VG 4 TJ = 125ºC 20 TJ = 25ºC 2 10 0 0 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 0 5 10 15 20 25 30 35 40 45 50 VSD - Volts QG - NanoCoulombs Fig. 11. Capacitance Fig. 12. Forward-Bias Safe Operating Area 10,000 100 RDS(on) Limit 25µs ds Ciss 10 a PicoFar1,000 eres 100µs acitance - 100 Coss I - AmpD 1 p 1ms Ca 0.1 TJ = 150ºC TC = 25ºC f = 1 MHz Single Pulse Crss 10ms 10 0.01 0 5 10 15 20 25 30 35 40 10 100 1000 VDS - Volts VDS - Volts © 2010 IXYS CORPORATION, All Rights Reserved

IXTA460P2 IXTP460P2 IXTQ460P2 IXTH460P2 Fig. 13. Maximum Transient Thermal Impedance 1 0.1 W C / - ºC h)J Z(t 0.01 0.001 0.00001 0.0001 0.001 0.01 0.1 1 Pulse Width - Seconds IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: T_460P2(57)6-03-10-A

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