IXTQ 26N50P V = 500 V PolarHVTM DSS IXTT 26N50P I = 26 A Power MOSFET IXTV 26N50P RD25 ≤≤≤≤≤ 230 mΩΩΩΩΩ DS(on) IXTV 26N50PS N-Channel Enhancement Mode Avalanche Rated TO-3P (IXTQ) Symbol Test Conditions Maximum Ratings V T = 25°C to 150°C 500 V G DSS J D V T = 25°C to 150°C; R = 1 MΩ 500 V S D (TAB) DGR J GS V Continuos ±30 V TO-268 (IXTT) GSS V Transient ±40 V GSM I T = 25°C 26 A D25 C G I T = 25°C, pulse width limited by T 78 A S D (TAB) DM C JM I T = 25°C 26 A AR C E T = 25°C 40 mJ PLUS220 (IXTV) AR C E T = 25°C 1.0 J AS C dv/dt I ≤ I , di/dt ≤ 100 A/µs, V ≤ V , 10 V/ns S DM DD DSS T ≤ 150°C, R = 4 Ω G J G D D (TAB) P T = 25°C 400 W S D C T -55 ... +150 °C PLUS220SMD (IXTV_S) J T 150 °C JM T -55 ... +150 °C stg T 1.6 mm (0.062 in.) from case for 10 s 300 °C L T Plastic body for 10 s 260 °C SOLD G M Mounting torque (TO-3P) 1.13/10 Nm/lb.in. d S D (TAB) Weight TO-3P 6 g TO-268 5.5 g G = Gate D = Drain PLUS220 & PLUS220SMD 5 g S = Source TAB = Drain Features Symbol Test Conditions Characteristic Values (T = 25°C, unless otherwise specified) Min. Typ. Max. J l International standard packages BV V = 0 V, I = 250 µA 500 V l Unclamped Inductive Switching (UIS) DSS GS D rated V V = V , I = 250µA 3.0 5.5 V GS(th) DS GS D l Low package inductance I V = ±30 V , V = 0 ±100 nA - easy to drive and to protect GSS GS DC DS I V = V 25 µA DSS DS DSS V = 0 V T = 125°C 250 µA Advantages GS J R V = 10 V, I = 0.5 I 230 mΩ l Easy to mount DS(on) GS D D25 Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % l Space savings l High power density © 2006 IXYS All rights reserved DS99206E(12/05)

IXTQ 26N50P IXTT 26N50P IXTV 26N50P IXTV26N50PS Symbol Test Conditions Characteristic Values (T = 25°C, unless otherwise specified) TO-3P (IXTQ) Outline J Min. Typ. Max. g V = 20 V; I = 0.5 I , pulse test 24 31 S fs DS D D25 C 3600 pF iss C V = 0 V, V = 25 V, f = 1 MHz 380 pF oss GS DS C 48 pF rss t 20 ns d(on) t V = 10 V, V = 0.5 I 25 ns r GS DS D25 t R = 4 Ω (External) 58 ns d(off) G t 20 ns f Q 65 nC g(on) Q V = 10 V, V = 0.5 V , I = 0.5 I 18 nC gs GS DS DSS D D25 Q 20 nC gd R 0.31 °C/W thJC R 0.21 °C/W thCS Source-Drain Diode Characteristic Values (T = 25°C, unless otherwise specified) J Symbol Test Conditions Min. Typ. Max. I V = 0 V 26 A S GS I Repetitive 104 A SM PLUS220 (IXTV) Outline V I = I , V = 0 V, 1.5 V SD F S GS Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % t I = 25A, -di/dt = 100 A/µs 300 ns rr F Q V = 100V, V = 0 V 3.3 µC RM R GS PLUS220SMD (IXTV_S) Outline IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405B2 6,759,692 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2

IXTQ 26N50P IXTT 26N50P IXTV 26N50P IXTV26N50PS Fig. 1. Output Characteristics Fig. 2. Extended Output Characteristics @ 25ºC @ 25ºC 26 60 24 VGS = 10V 55 VGS = 10V 8V 8V 22 7V 50 20 45 18 40 7V mperes 1146 mperes 3305 A 12 A I - D 10 6V I - D 25 20 8 6V 6 15 4 10 2 5V 5 5V 0 0 0 1 2 3 4 5 6 7 0 3 6 9 12 15 18 21 24 27 30 V - Volts V - Volts DS DS Fig. 3. Output Characteristics Fig. 4. RDS(on) Normalized to ID = 13A Value @ 125ºC vs. Junction Temperature 26 3.1 24 V G S = 1 70VV 2.8 VGS = 10V 22 20 2.5 d 18 6V ze 2.2 es 16 ali per 14 orm 1.9 I D = 26A m N I - AD 11028 R - DS(on) 11..36 I D = 13A 6 5V 1 4 0.7 2 0 0.4 0 2 4 6 8 10 12 14 16 -50 -25 0 25 50 75 100 125 150 V - Volts T - Degrees Centigrade DS J Fig. 5. RDS(on) Normalized to ID = 13A Value Fig. 6. Maximum Drain Current vs. vs. Drain Current Case Temperature 3.2 30 3 VGS = 10V 2.8 TJ = 125ºC 25 2.6 d e z 2.4 20 ali es orm 2.2 per N 2 m 15 - on) 1.8 - AD DS( 1.6 I 10 R 1.4 1.2 TJ = 25ºC 5 1 0.8 0 0 5 10 15 20 25 30 35 40 45 50 55 60 -50 -25 0 25 50 75 100 125 150 ID - Amperes TJ - Degrees Centigrade © 2006 IXYS All rights reserved

IXTQ 26N50P IXTT 26N50P IXTV 26N50P IXTV26N50PS Fig. 7. Input Admittance Fig. 8. Transconductance 50 50 45 45 40 40 35 35 TJ = - 40ºC mperes 2350 T J = 1 2255ººCC Siemens 2350 1 2255ººCC I - AD 20 - 40ºC g - f s 20 15 15 10 10 5 5 0 0 3.5 4 4.5 5 5.5 6 6.5 7 0 5 10 15 20 25 30 35 40 45 50 55 60 V - Volts I - Amperes GS D Fig. 9. Forward Voltage Drop of Intrinsic Diode Fig. 10. Gate Charge 80 10 9 VDS = 250V 70 I D = 13A 8 60 I G = 10mA 7 eres 50 olts 6 p V Am 40 - S 5 I - S 30 TJ = 125ºC VG 4 3 20 2 10 TJ = 25ºC 1 0 0 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 0 5 10 15 20 25 30 35 40 45 50 55 60 65 V - Volts Q - NanoCoulombs SD G Fig. 11. Capacitance Fig. 12. Forward-Bias Safe Operating Area 10,000 100 f = 1 MHz RDS(on) Limit s Ciss ad 25µs ance - PicoFar1,000 Coss - AmperesD10 110m0sµs acit 100 I 10ms p a C DC TJ = 150ºC Crss TC = 25ºC 10 1 0 5 10 15 20 25 30 35 40 10 100 1000 V - Volts V - Volts DS DS IXYS reserves the right to change limits, test conditions, and dimensions.

IXTQ 26N50P IXTT 26N50P IXTV 26N50P IXTV26N50PS Fig. 13. Maximum Transient Thermal Resistance 1.000 W C / - ºC 0.100 J h) R(t 0.010 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds TO-268 (IXTT) Outline © 2006 IXYS All rights reserved

Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications.Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.