TrenchMVTM Power IXTH200N10T V = 100V DSS MOSFET IXTQ200N10T I = 200A D25 R ≤≤≤≤≤ 5.5mΩΩΩΩΩ DS(on) N-Channel Enhancement Mode Avalanche Rated TO-247 (IXTH) Symbol Test Conditions Maximum Ratings V T = 25°C to 175°C 100 V DSS J V T = 25°C to 175°C, R = 1MΩ 100 V DGR J GS G D (TAB) V Transient ± 30 V S GSM I T = 25°C 200 A D25 C TO-3P (IXTQ) I Lead Current Limit, RMS 75 A LRMS I T = 25°C, pulse width limited by T 500 A DM C JM I T = 25°C 40 A A C E T = 25°C 1.5 J AS C G PD TC = 25°C 550 W D S (TAB) T -55 ... +175 °C J T 175 °C JM T -55 ... +175 °C G = Gate D = Drain stg S = Source TAB = Drain T 1.6mm (0.062in.) from case for 10s 300 °C L Plastic body for 10 seconds 260 °C M Mounting torque 1.13 / 10 Nm/lb.in. Features d Weight TO-247 6.0 g (cid:122)International standard packages TO-3P 5.5 g (cid:122)175°C Operating Temperature (cid:122)Avalanche Rated (cid:122) Low R DS(on) Advantages Symbol Test Conditions Characteristic Values (T = 25°C unless otherwise specified) Min. Typ. Max. (cid:122) Easy to mount J (cid:122) Space savings BV V = 0V, I = 250μA 100 V DSS GS D (cid:122) High power density V V = V , I = 250μA 2.5 4.5 V GS(th) DS GS D Applications I V = ± 20V, V = 0V ±200 nA GSS GS DS I V = V 5 μA (cid:122) Automotive DSS DS DSS - Motor Drives V = 0V T = 150°C 250 μA GS J - High Side Switch R V = 10V, I = 50A, Notes 1, 2 4.5 5.5 mΩ - 12V Battery DS(on) GS D - ABS Systems (cid:122) DC/DC Converters and Off-line UPS (cid:122) Primary - Side Switch (cid:122) High Current Switching Applications © 2008 IXYS CORPORATION, All rights reserved DS99654A(10/08)

IXTH200N10T IXTQ200N10T Symbol Test Conditions Characteristic Values TO-247 (IXTH) Outline (T = 25°C, unless otherwise specified) Min. Typ. Max. J g V = 10V, I = 60A, Note 1 60 96 S fs DS D C 9400 pF iss C V = 0V, V = 25V, f = 1MHz 1087 pF ∅ P oss GS DS 1 2 3 C 140 pF rss t 35 ns d(on) Resistive Switching Times t 31 ns r V = 10V, V = 0.5 • V , I = 50A t G S D S D S S D 45 ns d(off) R = 3.3Ω (External) e G t 34 ns f Terminals: 1 - Gate 2 - Drain Q 152 nC g(on) Dim. Millimeter Inches Min. Max. Min. Max. Q V = 10V, V = 0.5 • V , I = 50A 47 nC gs GS DS DSS D A 4.7 5.3 .185 .209 Q 47 nC A 2.2 2.54 .087 .102 gd 1 A 2.2 2.6 .059 .098 2 R 0.27 °C/W b 1.0 1.4 .040 .055 thJC b 1.65 2.13 .065 .084 RthCH 0.25 °C/W b12 2.87 3.12 .113 .123 C .4 .8 .016 .031 D 20.80 21.46 .819 .845 E 15.75 16.26 .610 .640 Source-Drain Diode e 5.20 5.72 0.205 0.225 Symbol Test Conditions Characteristic Values L 19.81 20.32 .780 .800 (T = 25°C, unless otherwise specified) Min. Typ. Max. L1 4.50 .177 J ∅P 3.55 3.65 .140 .144 I V = 0V 200 A Q 5.89 6.40 0.232 0.252 S GS R 4.32 5.49 .170 .216 I Repetitive, Pulse width limited by T 500 A SM JM V I = 50A, V = 0V, Note 1 1.0 V SD F GS TO-3P (IXTQ) Outline tQrr IF = 100A, VGS = 0V,-di/dt = 100A/μs 2 7065 nnCs RM V = 50V I R 5.4 A RM Notes: 1. Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%. 2. On through-hole packages, R Kelvin test contact DS(on) location must be 5mm or less from the package body. Pins: 1 - Gate 2 - Drain 3 - Source 4, TAB - Drain IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents:4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B27,071,537

IXTH200N10T IXTQ200N10T Fig. 1. Output Characteristics Fig. 2. Extended Output Characteristics @ 25ºC @ 25ºC 200 350 VGS = 10V VGS = 10V 180 9V 300 9V 8V 8V 160 250 140 es es mper 120 7V mper200 I - AD10800 I - AD150 7V 6V 60 100 6V 40 50 20 5V 5V 0 0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 0 1 2 3 4 5 6 VDS - Volts VDS - Volts Fig. 3. Output Characteristics Fig. 4. RDS(on) Normalized to ID = 100A Value @ 150ºC vs. Junction Temperature 200 2.8 VGS = 10V 180 9V 2.6 VGS = 10V 8V 2.4 160 d 2.2 140 e - AmperesD 11028000 7V - Normalizon) 1112....4680 I D = 200A I D = 100A I 6V S( 60 RD 1.2 1.0 40 0.8 20 5V 0.6 0 0.4 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 -50 -25 0 25 50 75 100 125 150 175 VDS - Volts TJ - Degrees Centigrade Fig. 5. R Normalized to I = 100A Value DS(on) D vs. Drain Current Fig. 6. Drain Current vs. Case Temperature 90 3.0 2.8 VGS = 10V 80 External Lead Current Limit 15V - - - - 2.6 70 d 2.4 TJ = 175ºC e aliz 2.2 es 60 Norm 2.0 mper 50 - S(on) 11..68 I - AD 40 RD 1.4 30 1.2 20 1.0 10 0.8 TJ = 25ºC 0.6 0 0 40 80 120 160 200 240 280 320 -50 -25 0 25 50 75 100 125 150 175 ID - Amperes TC - Degrees Centigrade © 2008 IXYS CORPORATION, All rights reserved

IXTH200N10T IXTQ200N10T Fig. 7. Input Admittance Fig. 8. Transconductance 250 160 225 TJ = - 40ºC 140 200 120 175 25ºC s eres150 men100 p e 150ºC I - AmD110205 T J = 1 5205 ººCC g - Sif s 6800 - 40ºC 75 40 50 20 25 0 0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 0 25 50 75 100 125 150 175 200 225 250 VGS - Volts ID - Amperes Fig. 9. Forward Voltage Drop of Intrinsic Diode Fig. 10. Gate Charge 300 10 270 9 VDS = 50V I D = 25A 240 8 I G = 10mA 210 7 peres 180 Volts 6 Am 150 - S 5 I - S120 TJ = 150ºC VG 4 90 3 TJ = 25ºC 60 2 30 1 0 0 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 0 20 40 60 80 100 120 140 160 VSD - Volts QG - NanoCoulombs Fig. 12. Maximum Transient Thermal Fig. 11. Capacitance Impedance 100,000 1.00 f = 1MHz s d ara Ciss coF10,000 W nce - Pi - ºC / C0.10 pacita 1,000 Coss Z(th)J a C Crss 100 0.01 0 5 10 15 20 25 30 35 40 0.0001 0.001 0.01 0.1 1 10 VDS - Volts Pulse Width - Seconds IXYS reserves the right to change limits, test conditions, and dimensions. IXYS REF: T_200N10T(6V)9-30-08-D

IXTH200N10T IXTQ200N10T Fig. 13. Resistive Turn-on Fig. 14. Resistive Turn-on Rise Time vs. Junction Temperature Rise Time vs. Drain Current 33 34 32 RG = 3.3Ω 33 RG = 3.3Ω 31 VGS = 10V 32 VGS = 10V VDS = 50V 31 VDS = 50V TJ = 25ºC t - Nanoseconds r 2222367890 I D = 50A t - Nanoseconds r 2222367890 TJ = 125ºC 25 I D = 25A 25 24 24 23 23 22 22 25 35 45 55 65 75 85 95 105 115 125 24 26 28 30 32 34 36 38 40 42 44 46 48 50 TJ - Degrees Centigrade ID - Amperes Fig. 15. Resistive Turn-on Fig. 16. Resistive Turn-off Switching Times vs. Gate Resistance Switching Times vs. Junction Temperature 220 85 42 75 200 t r td(on) - - - - 80 t f td(off) - - - - 180 TJ = 125ºC, VGS = 10V 75 40 RG = 3.3Ω, VGS = 10V 70 t - Nanoseconds r1111024668000000 VDS = 50V I D = 50A I D = 25A 455667505050 d ( o n ) - Nanosecondt t - Nanoseconds f33332468 VDS = 50V I D = 25AI D = 50A 55660505 d ( o f f )- Nanosecondt s s 40 40 30 45 20 35 0 30 28 40 2 4 6 8 10 12 14 16 18 20 25 35 45 55 65 75 85 95 105 115 125 RG - Ohms TJ - Degrees Centigrade Fig. 17. Resistive Turn-off Fig. 18. Resistive Turn-off Switching Times vs. Drain Current Switching Times vs. Gate Resistance 38 80 200 300 37 t f td(off) - - - - 75 180 t f td(off) - - - - 275 36 TJ = 125ºC RVDGS = = 3 5.30ΩV, V G S = 10V 70 dt 160 TVJD S= =1 2550ºVC , V G S = 10V 250 dt t - Nanoseconds f333345 TTJJ = = 2 255ºCºC 566505 ( o f f ) - Nanosecon t - Nanoseconds f1110246800000 I D = 25A I D = 50A 111222570250505 ( o f f ) - Nanosecon 32 50 d d s s 40 100 31 TJ = 125ºC 45 20 75 30 40 0 50 24 26 28 30 32 34 36 38 40 42 44 46 48 50 2 4 6 8 10 12 14 16 18 20 ID - Amperes RG - Ohms © 2008 IXYS CORPORATION, All rights reserved IXYS REF: T_200N10T(6V)9-30-08-D

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