High Voltage IXTL2N450 V = 4500V DSS Power MOSFET I = 2A D25 R  20 DS(on) (Electrically Isolated Tab) N-Channel Enhancement Mode ISOPLUS i5-PakTM Symbol Test Conditions Maximum Ratings G VDSS TJ = 25C to 150C 4500 V S V T = 25C to 150C, R = 1M 4500 V D Isolated Tab DGR J GS V Continuous 20 V GSS V Transient 30 V G = Gate S = Source GSM D = Drain I T = 25C 2 A D25 C I T = 25C, Pulse Width Limited by T 8 A DM C JM P T = 25C 220 W D C T - 55 ... +150 C Features J T 150 C JM T - 55 ... +150 C  Silicon Chip on Direct-Copper Bond stg (DCB) Substrate T Maximum Lead Temperature for Soldering 300 °C L  Isolated Mounting Surface T Plastic Body for 10s 260 °C SOLD  4000V~ RMS Electrical Isolation F Mounting Force 20..120 / 4.5..27 N/lb.  Molding Epoxies meet UL 94 V-0 C Flammability Classification V 50/60Hz, 1 Minute 4000 V~ ISOL Weight 8 g Advantages  Easy to Mount  Space Savings  High Power Density Symbol Test Conditions Characteristic Values (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J V V = V , I = 250A 3.5 6.0 V GS(th) DS GS D Applications I V = 20V, V = 0V 200 nA GSS GS DS  High Voltage Power Supplies I V = 3.6kV, V = 0V 10 A  Capacitor Discharge Applications DSS DS GS V = 4.5kV 50 μA  Pulse Circuits DS V = 3.6kV Note 2, T = 125C 250 μA  Laser and X-Ray Generation Systems DS J R V = 10V, I = 0.5 • I , Note 1 20  DS(on) GS D D25 © 2013 IXYS CORPORATION, All Rights Reserved DS100458B(9/13)

IXTL2N450 Symbol Test Conditions Characteristic Values (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J g V = 60V, I = 0.5 • I , Note 1 2.1 3.5 S fs DS D D25 C 6860 pF iss C V = 0V, V = 25V, f = 1MHz 267 pF oss GS DS C 105 pF rss R Integrated Gate Input Resistance 4.0  Gi t 40 ns d(on) Resistive Switching Times t 34 ns r V = 10V, V = 1kV, I = 1A t GS DS D 123 ns d(off) R = 0 (External) t G 205 ns f Q 180 nC g(on) Q V = 10V, V = 1kV, I = 0.5 • I 34 nC gs GS DS D D25 Q 83 nC gd R 0.56 C/W thJC R 0.15 C/W thCS Source-Drain Diode Symbol Test Conditions Characteristic Values (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J I V = 0V 2 A S GS I Repetitive, Pulse Width Limited by T 8 A SM JM V I = I , V = 0V, Note 1 3 V SD F S GS t I = 2A, -di/dt = 100A/μs, V = 100V 1.75 μs rr F R Notes: 1. Pulse test, t  300s, duty cycle, d  2%. 2. Part must be heatsunk for high-temp Idss measurement. ISOPLUS i5-PakTM (IXTL) Outline E Q A2 A S U R D Q1 T R1 4 1 2 3 L1 1 = Gate 2 = Source 3 = Drain L 4 = Isolated c b1 b2 e1 e IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or moreof the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B27,071,537

IXTL2N450 Fig. 1. Output Characteristics @ TJ = 25ºC Fig. 2. Output Characteristics @ TJ = 125ºC 3.0 1.8 VGS = 10V VGS = 10V 1.6 6V 2.5 7V 1.4 2.0 1.2 s s e e er er 1.0 p p m 1.5 m A 6.5V A - D - D 0.8 5.5V I I 1.0 0.6 0.4 0.5 6V 0.2 5V 0.0 0.0 0 10 20 30 40 50 60 70 0 10 20 30 40 50 60 70 V - Volts V - Volts DS DS Fig. 3. RDS(on) Normalized to ID = 1A Value Fig. 4. RDS(on) Normalized to ID = 1A Value vs. Junction Temperature vs. Drain Current 2.4 2.4 2.2 VGS = 10V 2.2 VGS = 10V 2.0 d 1.8 I D = 2A ed 2.0 TJ = 125ºC e z aliz 1.6 I D = 1A mali 1.8 - Normn) 11..24 - Noron) 1.6 S(o DS( 1.4 RD 1.0 R 1.2 0.8 TJ = 25ºC 1.0 0.6 0.4 0.8 -50 -25 0 25 50 75 100 125 150 0 0.5 1 1.5 2 2.5 3 TJ - Degrees Centigrade ID - Amperes Fig. 5. Maximum Drain Current vs. Case Temperature Fig. 6. Input Admittance 1.8 2.0 1.6 1.4 1.6 1.2 s s e e er 1.2 er 1.0 p p m m - AD - AD 0.8 I 0.8 I 0.6 TJ = 125ºC 25ºC 0.4 0.4 - 40ºC 0.2 0.0 0.0 -50 -25 0 25 50 75 100 125 150 4.0 4.5 5.0 5.5 6.0 6.5 7.0 TC - Degrees Centigrade VGS - Volts © 2013 IXYS CORPORATION, All Rights Reserved

IXTL2N450 Fig. 7. Transconductance Fig. 8. Forward Voltage Drop of Intrinsic Diode 6 6 TJ = - 40ºC 5 5 25ºC 4 4 s n 125ºC s Sieme 3 mpere 3 TJ = 125ºC g - f s I - AS TJ = 25ºC 2 2 1 1 0 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 ID - Amperes VSD - Volts Fig. 9. Gate Charge Fig. 10. Capacitance 10 10,000 9 VDS = 1000V Ciss I D = 1A 8 I G = 10mA ds 7 ara1,000 F - VoltsS 56 ce - Pico Coss G n V 4 a acit 100 3 p Ca Crss 2 1 f = 1 MHz 0 10 0 20 40 60 80 100 120 140 160 180 0 5 10 15 20 25 30 35 40 QG - NanoCoulombs VDS - Volts Fig. 12. Resistive Switching Times vs. Fig. 11. Forward-Bias Safe Operating Area External Gate Resistance 10 300 RDS(on) Limit VDS = 1kV, VGS = 10V 25µs ds 250 ID = 1A, TJ = 25ºC n 100µs o c e es 1 1ms anos 200 t f mper s - N 150 I - AD 0.1 10ms ng Time 100 t d(off) t r hi c TJ = 150ºC 100ms Swit 50 t d(on) TC = 25ºC Single Pulse DC 1s 0.01 0 100 1,000 10,000 0 1 2 3 4 5 6 7 8 9 10 VDS - Volts RG(ext) - Ohms IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

IXTL2N450 Fig. 13. Maximum Transient Thermal Impedance 1 W C / - ºC 0.1 h)J Z(t 0.01 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width - Seconds © 2013 IXYS CORPORATION, All Rights Reserved IXYS REF: T_2N450(H9-P640) 9-24-13

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