ICGOO在线商城 > 分立半导体产品 > 晶体管 - FET,MOSFET - 单 > IXTK17N120L
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IXTK17N120L产品简介:
ICGOO电子元器件商城为您提供IXTK17N120L由IXYS设计生产,在icgoo商城现货销售,并且可以通过原厂、代理商等渠道进行代购。 IXTK17N120L价格参考。IXYSIXTK17N120L封装/规格:晶体管 - FET,MOSFET - 单, 通孔 N 沟道 1200V 17A(Tc) 700W(Tc) TO-264(IXTK)。您可以下载IXTK17N120L参考资料、Datasheet数据手册功能说明书,资料中有IXTK17N120L 详细功能的应用电路图电压和使用方法及教程。
参数 | 数值 |
产品目录 | |
描述 | MOSFET N-CH 1200V 17A TO-264MOSFET 17 Amps 1200V |
产品分类 | FET - 单分离式半导体 |
FET功能 | 标准 |
FET类型 | MOSFET N 通道,金属氧化物 |
Id-连续漏极电流 | 17 A |
品牌 | IXYS |
产品手册 | |
产品图片 | |
rohs | 符合RoHS无铅 / 符合限制有害物质指令(RoHS)规范要求 |
产品系列 | 晶体管,MOSFET,IXYS IXTK17N120L- |
数据手册 | |
产品型号 | IXTK17N120L |
Pd-PowerDissipation | 700 W |
Pd-功率耗散 | 700 W |
Qg-GateCharge | 270 nC |
Qg-栅极电荷 | 270 nC |
RdsOn-漏源导通电阻 | 990 mOhms |
Vds-漏源极击穿电压 | 1.2 kV |
Vgs-Gate-SourceBreakdownVoltage | +/- 30 V |
Vgs-栅源极击穿电压 | 30 V |
Vgsth-Gate-SourceThresholdVoltage | 5 V |
Vgsth-栅源极阈值电压 | 5 V |
上升时间 | 39 ns |
下降时间 | 63 ns |
不同Id时的Vgs(th)(最大值) | 5V @ 250µA |
不同Vds时的输入电容(Ciss) | 8300pF @ 25V |
不同Vgs时的栅极电荷(Qg) | 155nC @ 15V |
不同 Id、Vgs时的 RdsOn(最大值) | 900 毫欧 @ 8.5A,20V |
产品种类 | MOSFET |
供应商器件封装 | TO-264 (IXTK) |
典型关闭延迟时间 | 75 ns |
功率-最大值 | 700W |
包装 | 管件 |
单位重量 | 10 g |
商标 | IXYS |
安装类型 | 通孔 |
安装风格 | Through Hole |
导通电阻 | 990 mOhms |
封装 | Tube |
封装/外壳 | TO-264-3,TO-264AA |
封装/箱体 | TO-264-3 |
工厂包装数量 | 25 |
晶体管极性 | N-Channel |
最大工作温度 | + 150 C |
最小工作温度 | - 55 C |
标准包装 | 25 |
正向跨导-最小值 | 3.5 S |
汲极/源极击穿电压 | 1.2 kV |
漏极连续电流 | 17 A |
漏源极电压(Vdss) | 1200V(1.2kV) |
电流-连续漏极(Id)(25°C时) | 17A (Tc) |
系列 | IXTK17N120 |
通道模式 | Enhancement |
配置 | Single |
Advance Technical Information Linear Power MOSFET IXTK17N120L V = 1200 V DSS With Extended FBSOA IXTX17N120L I = 17 A D25 ≤≤≤≤≤ ΩΩΩΩΩ R 0.99 N-Channel Enhancement Mode DS(on) TO-264 (IXTK) Symbol Test Conditions Maximum Ratings V T = 25°C to 150°C 1200 V DSS J V T = 25°C to 150°C; R = 1 MΩ 1200 V DGR J GS G V Continuous ±30 V D GS S (TAB) V Transient ±40 V GSM I T = 25°C 17 A PLUS247 (IXTX) D25 C I T = 25°C, pulse width limited by T 30 A DM C JM I T = 25°C 10 A AR C E T = 25°C 60 mJ AR C E 1.5 J AS P T = 25°C 700 W D C TAB T -55 to +150 °C J T 150 °C JM G = Gate D = Drain T -55 to +150 °C S = Source TAB = Drain stg T 1.6 mm (0.063 in) from case for 10 s 300 °C L T Plastic body for 10 s 260 °C SOLD M Mounting torque (TO-264) 1.13/10 Nm/lb.in. Features d F Mounting force (PLUS247TM) 20...120/4.5...27 N/lb. c (cid:122)Designed for linear operation Weight PLUS247 6 g TO-264 10 g (cid:122)International standard package (cid:122)Unclamped Inductive switching (UIS) rated (cid:122)Molding epoxies meet UL94V-0 flammability classification Symbol Test Conditions Characteristic Values Applications (T = 25°C, unless otherwise specified) J Min. Typ. Max. (cid:122)Programmable loads BV V = 0 V, I = 1 mA 1200 V DSS GS D (cid:122)Current regulators V V = V , I = 250 μA 3 5 V GS(th) DS GS D (cid:122)DC-DC converters IGSS VGS = ±30 V, VDS = 0 V ±200 nA (cid:122)Battery chargers IDSS VVDS == 0V DVSS TTJ == 1 2255°°CC 520 mμAA (cid:122)DC choppers GS J (cid:122)Temperature and lighting controls R V = 20 V, I = 0.5 I , Note 1 0.99 Ω DS(on) GS D D25 Advantages (cid:122) Easy to mount (cid:122) Space savings (cid:122) High power density IXYS reserves the right to change limits, test conditions, and dimensions. © 2007 IXYS CORPORATION, All rights reserved DS99615(03/07)
IXTK17N120L IXTX17N120L Symbol Test Conditions Characteristic Values TO-264 (IXTK) Outline (T = 25°C, unless otherwise specified) J Min. Typ. Max. g V = 20 V; I = 0.5 • I , Note 1 3.5 5.0 7.5 S fs DS D D25 C 8000 pF iss C V = 0 V, V = 25 V, f = 1 MHz 520 pF oss GS DS C 86 pF rss t 40 ns d(on) t V = 15 V, V = 0.5 • V , I = 0.5 • I 39 ns r GS DS DSS D D25 t R = 2 Ω (External), 75 ns d(off) G t 63 ns f Q 270 nC g(on) Q V = 15 V, V = 0.5 • V , I = 0.5 • I 70 nC gs GS DS DSS D D25 Q 110 nC gd R 0.18 °C/W thJC R 0.15 °C/W thCS Safe Operating Area Specification Symbol Test Conditions Min. Typ. Max. SOA V = 800 V, I = 0.3 A, T = 90°C 240 W DS D C Source-Drain Diode Characteristic Values (T = 25°C, unless otherwise specified) PLUS247TM (IXTX) Outline J Symbol Test Conditions Min. Typ. Max. I V = 0 V 17 A S GS I Repetitive; pulse width limited by T 30 A SM JM V I = I , V = 0 V, Note 1 1.5 V SD F S GS t I = I , -di/dt = 100 A/μs, V =100V 1350 ns rr F S R Note 1: Pulse test, t < 300 μs, duty cycle, d ≤ 2 % Terminals: 1 - Gate 2 - Drain (Collector) 3 - Source (Emitter) 4 - Drain (Collector) Dim. Millimeter Inches Min. Max. Min. Max. A 4.83 5.21 .190 .205 A 2.29 2.54 .090 .100 1 A 1.91 2.16 .075 .085 2 b 1.14 1.40 .045 .055 b 1.91 2.13 .075 .084 1 b 2.92 3.12 .115 .123 ADVANCE TECHNICAL INFORMATION 2 C 0.61 0.80 .024 .031 The product presented herein is under development. The Technical Specifications offered are D 20.80 21.34 .819 .840 derived from a subjective evaluation of the design, based upon prior knowledge and experience, E 15.75 16.13 .620 .635 and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change e 5.45 BSC .215 BSC limits, test conditions, and dimensions without notice. L 19.81 20.32 .780 .800 L1 3.81 4.32 .150 .170 Q 5.59 6.20 .220 0.244 R 4.32 4.83 .170 .190 IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B27,071,537
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