MegaMOSTMFET V I R DSS D25 DS(on) IXTH / IXTM 67N10 100 V 67 A 25 mΩΩΩΩΩ IXTH / IXTM 75N10 100 V 75 A 20 mΩΩΩΩΩ IXTT 75N10 N-Channel Enhancement Mode TO-247 AD (IXTH) E Symbol Test Conditions Maximum Ratings T (TAB) V T = 25°C to 150°C 100 V DSS J V T = 25°C to 150°C; R = 1 MΩ 100 V DGR J GS V Continuous ±20 V TO-204 AE (IXTM) GS E V Transient ±30 V GSM I T = 25°C 67N10 67 A D25 C 75N10 75 A I T = 25°C, pulse width limited by T 67N10 L268 A DM C JM 75N10 300 A G D P T = 25°C 300 W TO-268 (IXTT) D C O T -55 ... +150 °C J T 150 °C JM Tstg -55 ... +150 °C G S D (TAB) G = Gate, D = Drain, M Mounting torque S 1.13/10 Nm/lb.in. S = Source, TAB = Drain d Weight TO-204 18 g Features TO-247 6 g TO-268 5 g (cid:122) International standard packages Maximum lead temperature for Bsoldering 10 °C (cid:122)(cid:122) LRouwg gReDdS p(ono) lyHsDiliMcoOnS gTMa tper ocecell ssstructure 1.6 mm (0.062 in.) from case for 10 s (cid:122) Unclamped Inductive Switching (UIS) rated (cid:122) Low package inductance - easy to drive and to protect O (cid:122) Fast intrinsic Rectifier Applications Symbol Test Conditions Characteristic Values (T = 25°C, unless otherwise specified) (cid:122) DC-DC converters J min. typ. max. (cid:122) Synchronous rectification (cid:122) Battery chargers V V = 0 V, I = 250 µA 100 V (cid:122) Switched-mode and resonant-mode DSS GS D power supplies V V = V , I = 4 mA 2.0 4 V (cid:122) DC choppers GS(th) DS GS D (cid:122) AC motor control I V = ±20 V , V = 0 ±100 nA (cid:122) Temperature and lighting controls GSS GS DC DS (cid:122) Low voltage relays I V = 0.8 • V T = 25°C 250 µA DSS VDS = 0 V DSS TJ = 125°C 1 mA GS J Advantages R V = 10 V, I = 0.5 I 67N10 0.025 Ω DS(on) GS D D25 75N10 0.020 Ω (cid:122) Easy to mount with 1 screw (TO-247) Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % (isolated mounting screw hole) (cid:122) Space savings (cid:122) High power density IXYS reserves the right to change limits, test conditions, and dimensions. DS91533F(9/03) © 2003 IXYS All rights reserved 1

IXTH / IXTM 67N10 IXTH / IXTM 75N10 IXTT 75N10 Symbol Test Conditions Characteristic Values (T = 25°C, unless otherwise specified) TO-247 AD (IXTH) Outline J min. typ. max. g V = 10 V; I = I , pulse test 25 30 S fs DS D D25 C 4500 pF iss 1 2 3 C V = 0 V, V = 25 V, f = 1 MHz 1300 pF oss GS DS C 550 pF rss t 40 60 ns E d(on) t V = 10 V, V = 0.5 • V , I = 0.5 I 60 110 ns r GS DS DSS D D25 t R = 2 Ω, (External) 100 140 ns Terminals: 1 - Gate 2 - Drain d(off) G 3 - Source Tab - Drain t 30 60 ns f TDim. Millimeter Inches Min. Max. Min. Max. Q 180 260 nC g(on) A 4.7 5.3 .185 .209 Q V = 10 V, V = 0.5 • V , I = 0.5 I 30 70 nC A 2.2 2.54 .087 .102 gs GS DS DSS D D25 A1 2.2 2.6 .059 .098 Q 90 160 nEC 2 gd b 1.0 1.4 .040 .055 b 1.65 2.13 .065 .084 R 0.42 K/W b1 2.87 3.12 .113 .123 thJC 2 C .4 .8 .016 .031 R (TO-204, TO-247) 0.25 K/W thCK D 20.80 21.46 .819 .845 L E 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 L 19.81 20.32 .780 .800 Source-Drain Diode Characteristic Values L1 4.50 .177 (T = 25°C, unOless otherwise specified) ∅P 3.55 3.65 .140 .144 J Q 5.89 6.40 0.232 0.252 Symbol Test Conditions min. typ. max. R 4.32 5.49 .170 .216 S 6.15 BSC 242 BSC I V = 0 V 67N10 67 A S GS 75N10 75 A TO-204AE (IXTM) Outline S I Repetitive; 67N10 268 A SM pulse width limited by T 75N10 300 A JM V I = I , V = 0 V, 1.75 V SD PFulseS tesGSt, t ≤ 300B µs, duty cycle d ≤ 2 % t I = I , -di/dt = 100 A/µs, V = 100 V 200 ns rr F S R TO-268 (IXTT) OOutline Pins 1 - Gate 2 - Source Case - Drain Dim. Millimeter Inches Min. Max. Min. Max. A 6.4 11.4 .250 .450 A1 3.42 .135 ∅b .97 1.09 .038 .043 ∅D 22.22 .875 e 10.67 11.17 .420 .440 e1 5.21 5.71 .205 .225 L 7.93 .312 ∅p 3.84 4.19 .151 .165 ∅p1 3.84 4.19 .151 .165 q 30.15 BSC 1.187 BSC R 13.33 .525 R1 4.77 .188 s 16.64 17.14 .655 .675 IXYS MOSFETs and IGBTs are covered by one or more 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1 of the following U.S. patents: 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343

IXTH / IXTM 67N10 IXTH / IXTM 75N10 IXTT 75N10 Fig. 1 Output Characteristics Fig. 2 Input Admittance 200 150 V = 10V T = 25°C GS J 125 9V 150 s s 100 e e er 8V er p p E m 100 m 75 A A - D - D 50 I 7V I 50 6V 25 TT = 125°C J T = 25°C 5V J 0 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 0 1 2 3 4 5 6 7 8 9 10 E V - Volts V - Volts DS GS Fig. 3 R vs. Drain Current Fig. 4 Temperature Dependence DS(on) of Drain to Source Resistance L 1.4 2.50 T = 25°C J 2.25 1.3 ed O ed 2.00 aliz 1.2 aliz 1.75 m V = 10V m GS or 1.1 or 1.50 N N - on) 1.0 - on) 1.25 ID = 37.5A S( S S( RD VGS = 15V RD 1.00 0.9 0.75 0.8 0.50 0 20 40 60 8B0 100 120 140 160 -50 -25 0 25 50 75 100 125 150 I - Amperes T - Degrees C D J Fig. 5 Drain Current vs. Fig. 6 Temperature Dependence of COase Temperature Breakdown and Threshold Voltage 80 1.2 75N10 V BV 1.1 GS(th) DSS 67N10 d 60 e z 1.0 s ali e m mper 40 Nor 0.9 - AD - G(th) 0.8 I V 0.7 20 V/ B 0.6 0 0.5 -50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150 T - Degrees C T - Degrees C C J IXYS reserves the right to change limits, test conditions, and dimensions. © 2003 IXYS All rights reserved 3

IXTH / IXTM 67N10 IXTH / IXTM 75N10 IXTT 75N10 Fig.7 Gate Charge Characteristic Curve Fig.8 Forward Bias Safe Operating Area 10 9 VDS = 50V 10µs 8 ID = 37.5A Limited by RDS(on) I = 1mA G 100 100µs 7 s s e Volt 6 per E 1ms - S 5 Am VG 4 - D 10 10ms 3 I 2 T 100ms 1 0 1 0 25 50 75 100 125 150 175 200 1 10 100 E Gate Charge - nCoulombs V - Volts DS Fig.9 Capacitance Curves Fig.10Source Current vs. Source to Drain Voltage L 6000 150 5000 125 O Capacitance - pF 234000000000 fV =DS 1 =M 2H5zV CCoissss S I - AmperesS 1057005 TJ = 125°C TJ = 25°C 1000 25 C rss 0 0 B 0 5 10 15 20 25 0.00 0.25 0.50 0.75 1.00 1.25 1.50 V - Volts V - Volt DS SD Fig.11 Transient Thermal Impedance O W D=0.5 K/ 0.1 e - D=0.2 s n o D=0.1 p s e D=0.05 R al 0.01 D=0.02 m D=0.01 er h Single pulse T 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Time - Seconds IXYS MOSFETs and IGBTs are covered by one or more 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1 of the following U.S. patents: 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343

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