LinearL2TM IXTH30N50L2 V = 500V DSS Power MOSFET IXTQ30N50L2 I = 30A D25 w/ Extended FBSOA R  215m IXTT30N50L2 DS(on) D OODDDD TO-268 (IXTT) N-Channel Enhancement Mode R G O wwGi G S O S D (Tab) TO-3P (IXTQ) Symbol Test Conditions Maximum Ratings V T = 25C to 150C 500 V DSS J V T = 25C to 150C, R = 1M 500 V DGR J GS G V Continuous  20 V D VGSS Transient  30 V S GSM D (Tab) I T = 25C 30 A D25 C I T = 25C, Pulse Width Limited by T 60 A TO-247 (IXTH) DM C JM I T = 25C 30 A A C E T = 25C 1.5 J AS C P T = 25C 400 W D C G T -55 ... +150  C D D (Tab) J S T 150  C JM Tstg -55 ... +150  C G = Gate D = Drain S = Source Tab = Drain T Maximum Lead Temperature for Soldering 300 °C L T Plastic Body for 10s 260 °C SOLD M Mounting Torque (TO-247&TO-3P) 1.13 / 10 Nm/lb.in d Features Weight TO-268 4.0 g TO-3P 5.5 g Designed for Linear Operation TO-247 6.0 g International Standard Packages Avalanche Rated Guaranteed FBSOA at 75C Symbol Test Conditions Characteristic Values (T = 25C Unless Otherwise Specified) Min. Typ. Max. Advantages J BV V = 0V, I = 250μA 500 V  Easy to Mount DSS GS D  Space Savings V V = V , I = 250μA 2.5 4.5 V GS(th) DS GS D  High Power Density I V = 20V, V = 0V 100 nA GSS GS DS Applications I V = V , V = 0V 50 A DSS DS DSS GS T = 125C 300 A J Solid State Circuit Breakers R V = 10V, I = 0.5 • I , Note 1 215 m Soft Start Controls DS(on) GS D D25 Linear Amplifiers Programmable Loads Current Regulators © 2014 IXYS CORPORATION, All Rights Reserved DS99957B (02/14)

IXTH30N50L2 IXTQ30N50L2 IXTT30N50L2 Symbol Test Conditions Characteristic Values TO-3P Outline (T = 25°C, Unless Otherwise Specified) Min. Typ. Max. J g V = 10V, I = 0.5 • I , Note 1 9 12 15 S fs DS D D25 C 8100 pF iss C V = 0V, V = 25V, f = 1MHz 530 pF oss GS DS C 115 pF rss R Integrated Gate Input Resistor 3.5  Gi t 35 ns d(on) Resistive Switching Times t 117 ns r V = 10V, V = 0.5 • V , I = 0.5 • I t GS DS DSS D D25 94 ns d(off) R = 0 (External) t G 40 ns f Q 240 nC g(on) Q V = 10V, V = 0.5 • V , I = 0.5 • I 58 nC gs GS DS DSS D D25 Q 135 nC gd R 0.31 °C/W thJC R (TO-247&TO-3P) 0.25 °C/W thCS Safe Operating Area Specification Characteristic Values Symbol Test Conditions Min. Typ. Max. SOA V = 400V, I = 0.5A, T = 75°C, Tp = 2s 200 W DS D C Source-Drain Diode TO-247 Outline Symbol Test Conditions Characteristic Values (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J I V = 0V 30 A S GS I Repetitive, Pulse Width Limited by T 120 A SM JM 1 2 3 P V I = I , V = 0V, Note 1 1.5 V SD F S GS t I = I , - d i/ d t = 1 0 0 A /  s , 500 ns rr F S V =100V, V = 0V R GS Note 1: Pulse test, t  300s, duty cycle, d 2%. e Terminals: 1 - Gate 2 - Drain 3 - Source TO-268 Outline Dim. Millimeter Inches Min. Max. Min. Max. A 4.7 5.3 .185 .209 A 2.2 2.54 .087 .102 1 A 2.2 2.6 .059 .098 2 b 1.0 1.4 .040 .055 b 1.65 2.13 .065 .084 1 b 2.87 3.12 .113 .123 2 C .4 .8 .016 .031 D 20.80 21.46 .819 .845 E 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 L 19.81 20.32 .780 .800 Terminals: 1 - Gate 2,4 - Drain L1 4.50 .177 3 - Source P 3.55 3.65 .140 .144 Q 5.89 6.40 0.232 0.252 R 4.32 5.49 .170 .216 S 6.15 BSC 242 BSC IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents:4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B27,071,537

IXTH30N50L2 IXTQ30N50L2 IXTT30N50L2 Fig. 1. Output Characteristics @ TJ = 25ºC Fig. 2. Extended Output Characteristics @ TJ = 25ºC 30 80 VGS = 20V VGS = 20V 12V 70 14V 10V 12V 24 9V 60 eres 18 8V eres 50 10V p p m m 40 A A 9V I - D 12 7V I - D 30 8V 20 6 6V 7V 10 6V 5V 0 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 0 5 10 15 20 25 30 VDS - Volts VDS - Volts Fig. 4. RDS(on) Normalized to ID = 15A Value vs. Fig. 3. Output Characteristics @ TJ = 125ºC Junction Temperature 30 2.8 V G S = 1220VV VGS = 10V 10V 2.4 24 9V d e peres 18 8V ormaliz 2.0 I D = 30A I - AmD 12 7V - NS(on) 1.6 I D = 15A RD 1.2 6V 6 0.8 5V 0 0.4 0 2 4 6 8 10 12 14 -50 -25 0 25 50 75 100 125 150 VDS - Volts TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 15A Value vs. Fig. 6. Maximum Drain Current vs. Drain Current Case Temperature 2.8 35 VGS = 10V 30 2.4 TJ = 125ºC d 25 e maliz 2.0 eres 20 Nor mp - S(on) 1.6 I - AD 15 D R 10 TJ = 25ºC 1.2 5 0.8 0 0 10 20 30 40 50 60 70 -50 -25 0 25 50 75 100 125 150 I - Amperes T - Degrees Centigrade D C © 2014 IXYS CORPORATION, All Rights Reserved

IXTH30N50L2 IXTQ30N50L2 IXTT30N50L2 Fig. 7. Input Admittance Fig. 8. Transconductance 50 30 27 TJ = - 40ºC 40 24 peres 30 T J = 1- 422055ºººCCC emens 1281 125º2C5 ºC m Si 15 I - AD 20 g - f s 12 9 10 6 3 0 0 3.5 4.5 5.5 6.5 7.5 8.5 9.5 0 5 10 15 20 25 30 35 40 45 50 V - Volts I - Amperes GS D Fig. 9. Forward Voltage Drop of Intrinsic Diode Fig. 10. Gate Charge 90 16 80 14 VDS = 250V I D = 15A 70 12 I G = 10mA 60 peres 50 Volts10 Am - S 8 - S 40 VG I 30 TJ = 125ºC 6 TJ = 25ºC 4 20 10 2 0 0 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 0 50 100 150 200 250 300 350 V - Volts Q - NanoCoulombs SD G Fig. 11. Capacitance Fig. 12. Maximum Transient Thermal Impedance 100,000 1 f = 1 MHz ds Ciss a10,000 ar oF W ce - Pic1,000 Coss - ºC / C 0.1 citan Z(th)J a p a C 100 Crss 10 0.01 0 5 10 15 20 25 30 35 40 0.0001 0.001 0.01 0.1 1 10 VDS - Volts Pulse Width - Seconds IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

IXTH30N50L2 IXTQ30N50L2 IXTT30N50L2 Fig. 13. Forward-Bias Safe Operating Area Fig. 14. Forward-Bias Safe Operating Area @ TC = 25ºC @ TC = 75ºC 100 100 RDS(on) Limit RDS(on) Limit 25µs 100µs 25µs 10 10 100µs s s ere 1ms ere p p m m 1ms A A - D 10ms - D I I 10ms 1 1 100ms DC 100ms DC TJ = 150ºC TJ = 150ºC Single Pulse Single Pulse 0.1 0.1 10 100 1000 10 100 1000 V - Volts V - Volts DS DS © 2014 IXYS CORPORATION, All Rights Reserved IXYS REF: T_30N50L2(7R)4-23-08-A

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