TrenchPTM IXTT76P10THV V = - 100V DSS Power MOSFET IXTA76P10T I = - 76A D25 R  25m IXTP76P10T DS(on) IXTH76P10T P-Channel Enhancement Mode TO-268HV (IXTT) Avalanche Rated D G S D (Tab) G TO-263 AA S (IXTA) G S D (Tab) Symbol Test Conditions Maximum Ratings V T = 25C to 150C - 100 V TO-220AB DSS J (IXTP) V T = 25C to 150C, R = 1M - 100 V DGR J GS V Continuous 15 V GSS VGSM Transient 25 V GDS D (Tab) I T = 25C - 76 A D25 C TO-247 I T = 25C, Pulse Width Limited by T - 230 A (IXTH) DM C JM I T = 25C - 38 A A C E T = 25C 1 J AS C G D P T = 25C 298 W S D (Tab) D C T -55 ... +150 C J G = Gate D = Drain T 150 C JM S = Source Tab = Drain T -55 ... +150 C stg T Maximum Lead Temperature for Soldering 300 °C L Features T 1.6 mm (0.062in.) from Case for 10s 260 °C SOLD M Mounting Torque (TO-220 & TO-247) 1.13 /10 Nm/lb.in. International Standard Packages d  Avalanche Rated Weight TO-263 2.5 g Extended FBSOA TO-220 3.0 g TO-268HV 4.0 g Fast Intrinsic Diode TO-247 6.0 g  Low R and Q DS(ON) G Advantages Symbol Test Conditions Characteristic Values  Easy to Mount (T = 25C, Unless Otherwise Specified) Min. Typ. Max.  Space Savings J BV V = 0V, I = - 250A -100 V DSS GS D Applications V V = V , I = - 250A - 2.0 - 4.0 V GS(th) DS GS D  High-Side Switching I V = 15V, V = 0V 100 nA GSS GS DS  Push Pull Amplifiers I V = V , V = 0V - 15 A  DC Choppers DSS DS DSS GS T = 125C - 750 A  Automatic Test Equipment J  Current Regulators R V = -10V, I = 0.5 • I , Note 1 25 m DS(on) GS D D25  Battery Charger Applications © 2017 IXYS CORPORATION, All Rights Reserved DS100024C(9/15)

IXTT76P10THV IXTA76P10T IXTP76P10T IXTH76P10T Symbol Test Conditions Characteristic Values (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J g V = -10V, I = 0.5 • I , Note 1 35 58 S fs DS D D25 C 13.7 nF iss C V = 0V, V = - 25V, f = 1MHz 890 pF oss GS DS C 275 pF rss t 25 ns d(on) Resistive Switching Times t 40 ns r V = -10V, V = 0.5 • V , I = 0.5 • I t GS DS DSS D D25 52 ns d(off) R = 1 (External) t G 20 ns f Q 197 nC g(on) Q V = -10V, V = 0.5 • V , I = 0.5 • I 65 nC gs GS DS DSS D D25 Q 65 nC gd R 0.42C/W thJC R TO-220 0.50 C/W thCS TO-247 0.21 C/W Source-Drain Diode Symbol Test Conditions Characteristic Values (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J I V = 0V - 76 A S GS I Repetitive, Pulse Width Limited by T - 304 A SM JM V I = - 38A, V = 0V, Note 1 -1.3 V SD F GS t 70 ns rr I = - 38A, -di/dt = -100A/s Q F 215  nC RM V = - 50V, V = 0V I R GS - 6 A RM Note 1: Pulse test, t  300s, duty cycle, d  2%. IXYS Reserves The Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents:4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B27,071,537

IXTT76P10THV IXTA76P10T IXTP76P10T IXTH76P10T Fig. 1. Output Characteristics @ TJ = 25oC Fig. 2. Extended Output Characteristics @ TJ = 25oC -80 -280 VGS = -10V VGS = -10V - 9V -70 - 9V -240 - 8V - 8V -60 - 7V -200 s -50 s e e er er-160 - 7V mp -40 - 6V mp A A I - D -30 I - D-120 -80 - 6V -20 -40 - 5V -10 - 5V 0 0 0 -0.2 -0.4 -0.6 -0.8 -1 -1.2 -1.4 -1.6 -1.8 -2 0 -5 -10 -15 -20 -25 -30 VDS - Volts VDS - Volts Fig. 4. RDS(on) Normalized to ID = - 38A Value vs. Fig. 3. Output Characteristics @ TJ = 125oC Junction Temperature -80 2.0 VGS = -10V -70 - 9V 1.8 VGS = -10V - 8V - 7V -60 d 1.6 e I D = - 76A peres -50 - 6V ormaliz 1.4 I D = - 38A m -40 N I - AD -30 - S(on) 1.2 D - 5V R 1.0 -20 -10 0.8 0 0.6 0 -0.4 -0.8 -1.2 -1.6 -2 -2.4 -2.8 -3.2 -50 -25 0 25 50 75 100 125 150 V - Volts T - Degrees Centigrade DS J Fig. 5. RDS(on) Normalized to ID = - 38A Value vs. Fig. 6. Maximum Drain Current vs. Case Temperature Drain Current 2.2 -90 VGS = -10V -80 2.0 TJ = 125oC -70 d 1.8 e -60 z ali es m 1.6 er -50 Nor mp - DS(on) 1.4 I - AD --4300 R 1.2 TJ = 25oC -20 1.0 -10 0.8 0 0 -40 -80 -120 -160 -200 -240 -50 -25 0 25 50 75 100 125 150 ID - Amperes TC - Degrees Centigrade © 2017 IXYS CORPORATION, All Rights Reserved

IXTT76P10THV IXTA76P10T IXTP76P10T IXTH76P10T Fig. 7. Input Admittance Fig. 8. Transconductance -140 100 TJ = - 40oC -120 VDS = -10V VDS = -10V 80 25oC -100 TJ = 125oC s peres -80 - 2450ooCC emen 60 125oC m Si I - AD -60 g - f s 40 -40 20 -20 0 0 -3.0 -3.5 -4.0 -4.5 -5.0 -5.5 -6.0 -6.5 -7.0 0 -20 -40 -60 -80 -100 -120 -140 -160 VGS - Volts ID - Amperes Fig. 9. Forward Voltage Drop of Intrinsic Diode Fig. 10. Gate Charge -240 -10 -9 VDS = - 50V -200 I D = - 38A -8 I G = -1mA -7 -160 s e s -6 er olt p V Am-120 - S -5 I - S TJ = 125oC VG -4 -80 -3 TJ = 25oC -2 -40 -1 0 0 -0.4 -0.5 -0.6 -0.7 -0.8 -0.9 -1.0 -1.1 -1.2 -1.3 -1.4 -1.5 0 20 40 60 80 100 120 140 160 180 200 V - Volts Q - NanoCoulombs SD G Fig. 11. Capacitance Fig. 12. Forward-Bias Safe Operating Area 100,000 -1,000 f = 1 MHz 100µs 25µs 1ms s e - PicoFarad10,000 Ciss mperes-100 RDS(on) Limit 100ms 10ms acitanc 1,000 I - AD -10 DC p Ca Coss TJ = 150oC TC = 25oC Crss Single Pulse 100 -1 0 -5 -10 -15 -20 -25 -30 -35 -40 -1 -10 -100 VDS - Volts VDS - Volts IXYS Reserves The Right to Change Limits, Test Conditions, and Dimensions.

IXTT76P10THV IXTA76P10T IXTP76P10T IXTH76P10T Fig. 13. Resistive Turn-on Rise Time vs. Fig. 14. Resistive Turn-on Rise Time vs. Junction Temperature Drain Current 44 44 40 RG = 1Ω, VGS = -10V 40 VDS = - 50V Nanoseconds 3326 I D = - 38A Nanoseconds 3326 RVGDS = =1 Ω- 5, 0VVG S = -10V TJ = 25oC t - r 28 t - r 28 I D = - 76A TJ = 125oC 24 24 20 20 25 35 45 55 65 75 85 95 105 115 125 -36 -40 -44 -48 -52 -56 -60 -64 -68 -72 -76 T - Degrees Centigrade I - Amperes J D Fig. 15. Resistive Turn-on Switching Times vs. Fig. 16. Resistive Turn-off Switching Times vs. Gate Resistance Junction Temperature 200 110 24 75 t r td(on) 23 t f td(off) 70 160 TJ = 125oC, VGS = -10V 90 RG = 1Ω, VGS = -10V t - Nanosecondsr 12800 VDS = - 50V I D = - 76A, - 38A 5700 d(on)t - Nanoseconds t - Nanosecondsf 1122289012 VDS = - 50V I D = - 7I 6DA = - 38A 4556650505 d(off)t - Nanoseconds 40 30 17 40 0 10 16 35 0 2 4 6 8 10 12 14 16 18 20 25 35 45 55 65 75 85 95 105 115 125 RG - Ohms TJ - Degrees Centigrade Fig. 17. Resistive Turn-off Switching Times vs. Fig. 18. Resistive Turn-off Switching Times vs. Drain Current Gate Resistance 24 66 200 300 23 t f td(off) 62 t f td(off) RG = 1Ω, VGS = -10V 160 TJ = 125oC, VGS = -10V 240 22 VDS = - 50V 58 VDS = - 50V t - Nanosecondsf 122901 TJ = 125oC, 25oC 455604 d(off)t - Nanosecond t - Nanosecondsf 12800 I D = - 38A, - 76A 112800 d(off)t - Nanosecond 18 42 s s 40 60 17 38 16 34 0 0 -36 -40 -44 -48 -52 -56 -60 -64 -68 -72 -76 0 2 4 6 8 10 12 14 16 18 20 I - Amperes R - Ohms D G © 2017 IXYS CORPORATION, All Rights Reserved

IXTT76P10THV IXTA76P10T IXTP76P10T IXTH76P10T Fig. 19. Maximum Transient Thermal Impedance 1 0.1 W K / - C h)J Z(t 0.01 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds IXYS Reserves The Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: T_76P10T(A6)11-08-10-A

IXTT76P10THV IXTA76P10T IXTP76P10T IXTH76P10T TO-268HV Outline PINS: 1 - Gate 2 - Source 3 - Drain TO-263 Outline TO-220 Outline TO-247 Outline D A A2A E B Q R S D2 D1 D P1 4 1 2 3 L1 C E1 1 = Gate L 2 = Drain 3 = Source 4 = Drain A1 b C b2 1 - Gate b4 e 2,4 - Drain 3 - Source Pins: 1 - Gate 2 - Drain 3 - Source © 2017 IXYS CORPORATION, All Rights Reserved

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