IXGT16N170A High Voltage V = 1700V CES IGBT w/ Sonic Diode IXGH16N170A I = 11A C90 IXGT16N170AH1 V £ 5.0V CE(sat) t = 35ns IXGH16N170AH1 fi(typ) H1 Symbol Test Conditions Maximum Ratings V T = 25C to 150C 1700 V CES J V T = 25C to 150C, R = 1M 1700 V TO-268 (IXGT) CGR J GE V Continuous 20 V GES V Transient 30 V G GEM I T = 25C 16 A E C25 C I T = 90C 11 A C (Tab) C90 C I T = 90C 17 A TO-247 (IXGH) F90 C I T = 25C, 1ms 40 A CM C SSOA V = 15V, T = 125C, R = 10 I = 40 A GE VJ G CM (RBSOA) Clamped Inductive Load 0.8 • V CES G tsc VGE = 15V, VCE = 1200V, TJ = 125°C 10 μs C E C (Tab) (SCSOA) R = 22, Non Repetitive G P T = 25C 190 W C C G = Gate C = Collector T -55 ... +150 C E = Emiiter Tab = Collector J T 150 C JM T -55 ... +150 C Features stg T Maximum Lead Temperature for Soldering 300 °C TL Plastic Body for 10s 260 °C  High Blocking Voltage SOLD International Standard Packages M Mounting Torque (TO-247) 1.13/10 Nm/lb.in d Low Conduction Losses Weight TO-268 4 g Anti-Parallel Sonic Diode TO-247 6 g  High Blocking Voltage High Currect Handling Capability Advantages Symbol Test Conditions Characteristic Values (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J Low Gate Drive Requirement BVCES IC = 250A, VGE = 0V 1700 V High Power Density V I = 250A, V = V 3.0 5.0 V GE(th) C CE GE Applications I V = 0.8 • V ,V = 0V 16N170A 50 A CES CE CES GE 1 6 N 1 7 0 A H 1 100 A Switch-Mode and Resonant-Mode T = 1 2 5  C 1 6 N 1 7 0 A 750 A Power Supplies J 16N170AH1 1.5 mA Uninterruptible Power Supplies (UPS) AC Choppers I V = 0V, V = 20V 100 nA GES CE GE Capacitor Discharge Circuits V I = 11A, V = 15V, Note 1 4.0 5.0 V AC Motor Drives CE(sat) C GE TJ = 125C 4.5 V DC Servo & Robot Drives © 2014 IXYS CORPORATION, All Rights Reserved DS99235C(04/14)

IXGH/T16N170A IXGH/T16N170AH1 Symbol Test Conditions Characteristic Values TO-268 Outline (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J g I = 16A, V = 10V, Note 1 6.0 12.5 S fs C CE C 1500 pF ies C V = 25V, V = 0V, f = 1MHz 16N170A 99 pF oes CE GE 1 6 N 1 7 0 A H 1 110 pF C 33 pF res Q 70 nC g(on) Q I = 11A, V = 15V, V = 0.5 • V 9 nC ge C GE CE CES Terminals: 1 - Gate 2,4 - Collector Q 32 nC 3 - Emitter gc t 12 ns d(on) Inductive load, T = 25°C t J 22 ns ri I = 16A, V = 15V C GE E 2.35 mJ on V = 0.5 • V , R = 10 CE CES G t 200 300 ns d(off) Note 2 t 35 150 ns fi E 0.38 1.50 mJ off t Inductive load, T = 125°C 13 ns d(on) J t I = 16A, V = 15V 22 ns ri C GE E V = 0.5 • V , R = 10 2.80 mJ on CE CES G t Note 2 210 ns d(off) t 88 ns fi E 0.67 mJ off TO-247 Outline R 0.65 C/W thJC R 0.21 C/W thCS P 1 2 3 Reverse Sonic Diode (FRD) (T = 25°C, Unless Otherwise Specified) Characteristic Values J Symbol Test Conditions Min. Typ. Max. V I = 20A, V = 0V, Note 1 3.4 V e F F GE T = 125C 2.8 J Terminals: 1 - Gate 2 - Collector 3 - Emitter t 300 ns rr IF = 10A, VGE = 0V, T = 1 2 5  C 550 ns Dim. Millimeter Inches I - d i / d t = 2 5 0 A / μ s , V = 9 0 0 V J 13 A Min. Max. Min. Max. RM F R A 4.7 5.3 .185 .209 T = 1 2 5  C 15 A A 2.2 2.54 .087 .102 J 1 A 2.2 2.6 .059 .098 R 1.5 °C/W 2 thJC b 1.0 1.4 .040 .055 b 1.65 2.13 .065 .084 1 b 2.87 3.12 .113 .123 2 C .4 .8 .016 .031 Notes: D 20.80 21.46 .819 .845 1. Pulse test, t  300μs, duty cycle, d  2%. E 15.75 16.26 .610 .640 2. Switching times & energy losses may increase for higher V (clamp), T or R . e 5.20 5.72 0.205 0.225 CE J G L 19.81 20.32 .780 .800 L1 4.50 .177 P 3.55 3.65 .140 .144 Q 5.89 6.40 0.232 0.252 R 4.32 5.49 .170 .216 S 6.15 BSC 242 BSC IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or moreof the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B27,071,537

IXGH/T16N170A IXGH/T16N170AH1 Fig. 1. Output Characteristics @ TJ = 25ºC Fig. 2. Extended Output Characteristics @ TJ = 25ºC 32 VGE = 15V 120 VGE = 15V 28 13V 11V 14V 10V 24 9V 100 13V 8V eres 20 es 80 12V mp 16 per I - AC 12 7V - IAmC 60 11V10V 40 8 9V 6V 20 4 8V 5V 7V 0 0 6V 0 1 2 3 4 5 6 7 8 0 5 10 15 20 25 30 V - Volts V - Volts CE CE Fig. 4. Dependence of VCE(sat) on Fig. 3. Output Characteristics @ TJ = 125ºC Junction Temperature 32 1.8 28 V G E = 1135VV 1.6 VGE = 15V 11V 10V I C = 32A 24 9V 8V d 1.4 e z s 20 ali mpere 16 Norm 1.2 I C = 16A I - AC 12 7V - E(sat) 1.0 C V 0.8 8 6V I C = 8A 4 0.6 5V 0 0.4 0 1 2 3 4 5 6 7 8 9 10 -50 -25 0 25 50 75 100 125 150 VCE - Volts TJ - Degrees Centigrade Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage Fig. 6. Input Admittance 10 50 TJ = 25ºC 45 9 40 8 35 olts 7 I C = 32A eres 30 V - VCE 6 - AmpC 2205 I 16A 5 15 TJ = 125ºC 10 25ºC 4 8A - 40ºC 5 3 0 6 7 8 9 10 11 12 13 14 15 3 4 5 6 7 8 9 10 V - Volts V - Volts GE GE © 2014 IXYS CORPORATION, All Rights Reserved

IXGH/T16N170A IXGH/T16N170AH1 Fig. 7. Transconductance Fig. 8. Gate Charge 22 16 20 TJ = - 40ºC VCE = 850V 14 18 I C = 11A 12 I G = 10mA 16 25ºC ns 14 10 me 12 125ºC olts g - Sie f s 108 V - VGE 68 6 4 4 2 2 0 0 0 5 10 15 20 25 30 35 40 45 50 55 0 10 20 30 40 50 60 70 IC - Amperes QG - NanoCoulombs Fig. 9. Capacitance Fig. 10. Reverse-Bias Safe Operating Area 10,000 45 f = 1 MHz 40 ds Cies 35 a Far1,000 30 o s c e Pi er 25 e - mp citanc Coes I - AC 20 a 100 15 p a C 10 TJ = 125ºC RG = 10Ω Cres 5 dv / dt < 10V / ns 10 0 0 5 10 15 20 25 30 35 40 100 300 500 700 900 1100 1300 1500 1700 VCE - Volts VCE - Volts Fig. 11. Maximum Transient Thermal Impedance (IGBT) 1 W 0.1 C / - ºC h)J Z(t 0.01 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

IXGH/T16N170A IXGH/T16N170AH1 Fig. 12. Inductive Switching Energy Loss vs. Fig. 13. Inductive Switching Energy Loss vs. Gate Resistance Collector Current 3.0 12 1.0 8 Eoff Eon - - - - 0.9 Eoff Eon - - - - 7 2.5 TJ = 125ºC , VGE = 15V 10 RG = 10Ω , VGE = 15V VCE = 850V 0.8 VCE = 850V 6 E - MilliJoulesoff 112...050 I C = 32A 468 onE - MilliJoules E - MilliJoulesoff 000...567 TJ = 125ºC TJ = 25ºC 345onE - MilliJoules 0.4 2 0.5 I C = 16A 2 0.3 1 0.0 0 0.2 0 10 20 30 40 50 60 70 80 8 12 16 20 24 28 32 RG - Ohms IC - Amperes Fig. 14. Inductive Switching Energy Loss vs. Fig. 15. Inductive Turn-off Switching Times vs. Junction Temperature Gate Resistance 1.4 8 120 900 1.2 Eoff Eon - - - - 7 110 t f i td(off) - - - - 800 RG = 10Ω , VGE = 15V 100 TJ = 125 VGE = 15V 700 1 VCE = 850V 6 VCE = 850V E - MilliJoulesoff 000...468 I C = 32A 345 onE - MilliJoules t - Nanoseconds f i 67890000 I C = 16A I C = 32A 345600000000 d(off)t - Nanoseconds I C = 16A 50 200 0.2 2 40 100 0 1 30 0 25 50 75 100 125 10 20 30 40 50 60 70 80 TJ - Degrees Centigrade RG - Ohms Fig. 16. Inductive Turn-off Switching Times vs. Fig. 17. Inductive Turn-off Switching Times vs. Collector Current Junction Temperature 140 280 100 280 t f i td(off) - - - - 90 t f i td(off) - - - - 260 120 260 RG = 10Ω , VGE = 15V RG = 10Ω , VGE = 15V 80 240 VCE = 850V VCE = 850V t - Nanoseconds f i104680000 TJ = 125ºC 122280240000 d(off)t - Nanoseconds t - Nanosecondsf i 45670000 I C =I 1C6 =A 32A 112268020000 d(off)t - Nanosecond 30 140 s 20 TJ = 25ºC 160 20 120 0 140 10 100 8 12 16 20 24 28 32 25 50 75 100 125 IC - Amperes TJ - Degrees Centigrade © 2014 IXYS CORPORATION, All Rights Reserved

IXGH/T16N170A IXGH/T16N170AH1 Fig. 18. Inductive Turn-on Switching Times vs. Fig. 19. Inductive Turn-on Switching Times vs. Gate Resistance Collector Current 100 90 50 24 90 t r i td(on) - - - - 80 45 t r i td(on) - - - - 22 TJ = 125ºC, VGE = 15V RG = 10Ω , VGE = 15V 80 VCE = 850V 70 40 VCE = 850V 20 t - Nanoseconds r i 45670000 I C = 3I C2 A= 16A 34560000 d(on)t - Nanoseconds t - Nanosecondsr i 22330505 TJ = 125ºC TJ = 25ºC 11112468 d(on)t - Nanoseconds 30 20 15 10 20 10 10 8 10 0 5 6 10 20 30 40 50 60 70 80 8 12 16 20 24 28 32 RG - Ohms IC - Amperes Fig. 20. Inductive Turn-on Switching Times vs. Junction Temperature 80 24 70 t r i td(on) - - - - 22 RG = 10Ω , VGE = 15V 60 VCE = 850V 20 seconds 50 I C = 32A 18 d(on)t - N o 40 16 a n n a o N s t - r i 30 14 econd 20 12 s I C = 16A 10 10 0 8 25 50 75 100 125 T - Degrees Centigrade J IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

IXGH/T16N170A IXGH/T16N170AH1 Fig. 21. Forward Current IF vs VF Fig. 22. Reverse Recovery Charge Qrr vs. -diF/dt 20 4.0 18 3.6 IF = 20A 16 14 TVJ = 25ºC 3.2 TVVRJ == 192050ºVC 12 125ºC 2.8 IF 10 Qrr [A] [µC] 8 2.4 10A 6 2.0 4 1.6 5A 2 0 1.2 0 0.5 1 1.5 2 2.5 3 200 300 400 500 600 700 V [V] F -di /dt [A/µs] F Fig. 23. Peak Reverse Current IRM vs. -diF/dt Fig. 24. Recovery Time trr vs. -diF/dt 28 700 IF = 20A 26 TVJ = 125ºC 650 TVJ = 125ºC VR = 900V 600 VR = 900V 24 10A 550 5A 22 500 IF = 20A IRM 20 trr 450 [A] [ns] 400 18 350 16 300 10A 14 250 Fig. 28. Maximum Transient Thermal Impedance 5A 12 200 10 200 300 400 500 600 700 200 300 400 500 600 700 -diF/dt [A/µs] -diF/dt [A/µs] Fig. 25. Recovery Energy Erec vs -diF/dt Fig. 26. Maximum Transient Thermal Impedance (Diode) aaa 4.0 3 TVJ = 125ºC 3.5 VR = 900V IF = 20A 3.0 W 1 C / [EmreJc]2.5 - ºh)JC Z(t 2.0 10A 1.5 5A 1.0 0.1 200 300 400 500 600 700 0.0001 0.001 0.01 0.1 1 10 -diF/dt [A/µs] Pulse Width - Seconds © 2014 IXYS CORPORATION, All Rights Reserved IXYS REF: G_16N170A(4N) 04-10-14 / DH10A-1800PA

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