Preliminary Technical Information GenX3TM C3-Class IXGH40N120C3D1 V = 1200V CES IGBT w/Diode I = 40A C110 V ≤≤≤≤≤ 4.4V CE(sat) t = 57ns fi(typ) High Speed PT IGBT for 20 - 50 kHz Switching Symbol Test Conditions Maximum Ratings TO-247 V T = 25°C to 150°C 1200 V CES J V T = 25°C to 150°C, R = 1MΩ 1200 V CGR J GE V Continuous ±20 V GES V Transient ±30 V GEM G TAB I T = 25°C (Limited by Leads) 75 A C C25 C E I T = 110°C 40 A C110 C I T = 110°C 25 A F110 C I T = 25°C, 1ms 180 A G = Gate C = Collector CM C E = Emitter TAB = Collector I T = 25°C 30 A A C E T = 25°C 500 mJ AS C SSOA V = 15V, T = 125°C, R = 3Ω I = 80 A GE J G CM (RBSOA) Clamped inductive load @V <1200 V CE Features P T = 25°C 380 W C C (cid:122)Optimized for Low Conduction Losses T -55 ... +150 °C J (cid:122)Square RBSOA T 150 °C JM (cid:122)Avalanche Rated T -55 ... +150 °C stg (cid:122)Anti-Parallel Ultra Fast Diode M Mounting Torque 1.13 / 10 Nm/lb.in. (cid:122)International Standard Package d T Maximum Lead Temperature for Soldering 300 °C L T 1.6mm (0.062 in.) from Case for 10s 260 °C SOLD Advantages Weight 6 g (cid:122)High Power Density (cid:122)Low Gate Drive Requirement Symbol Test Conditions Characteristic Values (T = 25°C, Unless Otherwise Specified) Min. Typ. Max. J Applications V I = 250μA, V = V 3.0 5.0 V GE(th) C CE GE •Switch-Mode and Resonant-Mode I V = V V = 0V 100 μA CES CE CES, GE Power Supplies T = 125°C 3 mA J •Uninterruptible Power Supplies (UPS) I V = 0V, V = ±20V ±100 nA GES CE GE •DC Choppers V I = 30A,V = 15V, Note 1 4.4 V •AC Motor Drives CE(sat) C GE T = 125°C 2.7 V •DC Servo and Robot Drives J © 2009 IXYS CORPORATION, All Rights Reserved DS100115(02/09)

IXGH40N120C3D1 Symbol Test Conditions Characteristic Values TO-247 (IXGH) Outline (T = 25°C, Unless Otherwise Specified) Min. Typ. Max. J g I = 30A, V = 10V, Note 1 18 30 S fs C CE C 2930 pF ies C V = 25V, V = 0V, f = 1MHz 240 pF oes CE GE ∅ P C 93 pF 1 2 3 res Q 142 nC g Q I = 40A, V = 15V, V = 0.5 • V 19 nC ge C GE CE CES Q 62 nC gc t 17 ns d(on) e t Inductive load, T = 25°C 33 ns ri J Terminals: 1 - Gate 2 - Drain E I = 30A, V = 15V 1.80 mJ 3 - Source Tab - Drain tdo(onff) VCCE = 600VG, ERG = 3Ω 130 ns Dim. MMini.llimeMtearx. MIinn.cheMsax. tfi Note 2 57 100 ns A 4.7 5.3 .185 .209 E 0.55 1.00 mJ A1 2.2 2.54 .087 .102 off A 2.2 2.6 .059 .098 2 t 17 ns b 1.0 1.4 .040 .055 d(on) b 1.65 2.13 .065 .084 t Inductive load, T = 25°C 35 ns 1 ri J b2 2.87 3.12 .113 .123 E I = 30A, V = 15V 3.50 mJ C .4 .8 .016 .031 tdo(onff) VCCE = 600VG, ERG = 3Ω 177 ns DE 2105..8705 2116..4266 ..861190 ..864450 tfi Note 2 298 ns e 5.20 5.72 0.205 0.225 E 1.60 mJ L 19.81 20.32 .780 .800 off L1 4.50 .177 R 0.33 °C/W ∅P 3.55 3.65 .140 .144 thJC R 0.21 °C/W Q 5.89 6.40 0.232 0.252 thCK R 4.32 5.49 .170 .216 S 6.15 BSC 242 BSC Reverse Diode (FRED) (T = 25°C, Unless Otherwise Specified) Characteristic Value J Symbol Test Conditions Min. Typ. Max. V 2.8 V F I = 30A,V = 0V, Note 1 F GE T = 150°C 1.6 V J I 4 A RM I = 30A,V = 0V, -di /dt = 100A/μs, T = 100°C F GE F J t V = 300V T = 1 0 0 ° C 100 ns rr R J R 0.9 °C/W thJC Note 1: Pulse Test, t ≤ 300μs, Duty Cycle, d ≤ 2%. 2. Switching Times may Increase for V (Clamp) > 0.5 V , CE CES Higher T or Increased R . J G PRELIMINARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a pre-production design evaluation. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents:4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B27,071,537

IXGH40N120C3D1 Fig. 1. Output Characteristics Fig. 2. Extended Output Characteristics @ 25ºC @ 25ºC 80 250 VGE = 15V VGE = 15V 70 13V 225 13V 11V 200 60 9V 175 peres 50 eres 150 11V I - AmC 3400 7V - AmpC 110205 9V I 75 20 7V 50 10 25 5V 5V 0 0 0 1 2 3 4 5 6 0 3 6 9 12 15 18 21 24 27 30 VCE - Volts VCE - Volts Fig. 3. Output Characteristics Fig. 4. Dependence of V on CE(sat) @ 125ºC Junction Temperature 80 1.3 70 V G E = 1153VV 1.2 VGE = 15V 11V 1.1 I C = 80A 60 9V d e z 1.0 peres 50 ormali 0.9 I - AmC 3400 7V - NCE(sat) 00..78 I C = 40A V 20 0.6 10 5V 0.5 I C = 20A 0 0.4 0 1 2 3 4 5 6 25 50 75 100 125 150 VCE - Volts TJ - Degrees Centigrade Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage Fig. 6. Input Admittance 8.0 100 7.5 TJ = 25ºC 90 80 7.0 70 6.5 - VoltsE 6.0 I C = 80A Amperes 5600 VC 5.5 - C 40 T J = 1 2255ººCC 5.0 I - 40ºC 40A 30 4.5 20 4.0 20A 10 3.5 0 5 6 7 8 9 10 11 12 13 14 15 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 VGE - Volts VGE - Volts © 2009 IXYS CORPORATION, All Rights Reserved

IXGH40N120C3D1 Fig. 7. Transconductance Fig. 8. Gate Charge 45 16 TJ = - 40ºC 40 14 VCE = 600V I C = 40A 35 12 I G = 10mA 25ºC s 30 g - Siemen f s 2205 125ºC V - VoltsGE 1068 15 4 10 5 2 0 0 0 10 20 30 40 50 60 70 80 90 100 0 20 40 60 80 100 120 140 160 IC - Amperes QG - NanoCoulombs Fig. 9. Capacitance Fig. 10. Reverse-Bias Safe Operating Area 10,000 90 f = 1 MHz 80 ds Cies 70 a Far1,000 60 o s c e Pi er 50 e - Coes mp acitanc 100 I - AC 3400 p a C Cres 20 TJ = 125ºC RG = 3Ω 10 dV / dt < 10V / ns 10 0 0 5 10 15 20 25 30 35 40 200 400 600 800 1000 1200 VCE - Volts VCE - Volts Fig. 11. Maximum Transient Thermal Impedance 1.00 W C / - ºC0.10 h)J Z(t 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: G_40N120C3(6N)2-18-09-A

IXGH40N120C3D1 Fig. 12. Inductive Switching Fig. 13. Inductive Switching Energy Loss vs. Gate Resistance Energy Loss vs. Collector Current 6 9 4.0 8 Eoff Eon - - - - 3.5 Eoff Eon - - - - 7 5 TJ = 125ºC , VGE = 15V 8 RG = 3Ω , VGE = 15V VCE = 600V 3.0 VCE = 600V 6 E - MilliJoulesoff 234 I C = 60A 567onE - MilliJoules E - MilliJoulesoff122...505 TJ = 125ºC 345 onE - MilliJoules I C = 30A 1.0 2 1 4 0.5 1 TJ = 25ºC 0 3 0.0 0 2 6 10 14 18 22 26 30 15 20 25 30 35 40 45 50 55 60 RG - Ohms IC - Amperes Fig. 14. Inductive Switching Fig. 15. Inductive Turn-off Energy Loss vs. Junction Temperature Switching Times vs. Gate Resistance 3.5 8 450 900 Eoff Eon - - - - 400 t f td(off) - - - - 800 3.0 RG = 3Ω , VGE = 15V 7 TJ = 125ºC, VGE = 15V E - MilliJoulesoff1122....0505 I CV =C E6 0=A 600V 3456onE - MilliJoules t - Nanoseconds f122335050500000 VCE = 600V I CI C= =6 03A0A 345670000000000 d(off)t - Nanoseconds 100 200 0.5 2 50 100 I C = 30A 0.0 1 0 0 25 35 45 55 65 75 85 95 105 115 125 4 6 8 10 12 14 16 18 20 22 24 26 28 30 TJ - Degrees Centigrade RG - Ohms Fig. 16. Inductive Turn-off Fig. 17. Inductive Turn-off Switching Times vs. Collector Current Switching Times vs. Junction Temperature 500 210 350 190 450 t f td(off) - - - - 200 300 t f td(off) - - - - 180 400 RG = 3Ω , VGE = 15V 190 RG = 3Ω , VGE = 15V t - Nanoseconds f122335050500000 TJ = 125ºC VCE = 600V 111114567800000 d(off)t - Nanosecond t - Nanosecondsf 112205050000 VCE = 600V I C = 30AI C = 60A 111145670000 d(off) - tNanosecond TJ = 25ºC s s 100 130 50 130 50 120 0 110 0 120 15 20 25 30 35 40 45 50 55 60 25 35 45 55 65 75 85 95 105 115 125 IC - Amperes TJ - Degrees Centigrade © 2009 IXYS CORPORATION, All Rights Reserved

IXGH40N120C3D1 Fig. 18. Inductive Turn-on Fig. 19. Inductive Turn-on Switching Times vs. Gate Resistance Switching Times vs. Collector Current 180 60 90 23 160 t r td(on) - - - - 55 80 t r td(on) - - - - 22 TJ = 125ºC, VGE = 15V RG = 3Ω , VGE = 15V t - Nanoseconds r1110246800000 VCE = 600V I C = 60A I C = 30A 3344505050 d(on)t - Nanoseconds t - Nanosecondsr 3456700000 VTCJ E= =1 2650º0CV, 25ºC 1112278901 d(on)t - Nanoseconds 40 25 20 16 20 20 10 15 0 15 0 14 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 15 20 25 30 35 40 45 50 55 60 RG - Ohms IC - Amperes Fig. 20. Inductive Turn-on Switching Times vs. Junction Temperature 90 22 80 21 I C = 60A s70 20 dt Nanosecond5600 tRV rCG E = = 3 6 Ω 0 0, V V Gt d E ( o=n )1 -5 V- - - 1189(on) - Nanose t - r 40 I C = 30A 17 cond s 30 16 20 15 25 35 45 55 65 75 85 95 105 115 125 TJ - Degrees Centigrade IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: G_40N120C3(6N)2-18-09-A

IXGH40N120C3D1 60 1000 30 A nC TVVJ== 130000°VC A TVVJ== 130000°VC R R 50 25 800 I= 60A I= 60A IF 40 Qr IIFF== 3105AA IRM20 IIFF== 3105AA F F T =150°C 600 VJ 30 15 T =100°C VJ 400 20 10 T =25°C VJ 200 10 5 0 0 0 0 1 2 3 V 100 A/μs 1000 0 200 400 600 A8/0μ0s 1000 V -di /dt -di /dt F F F Fig. 21. Forward Current I Versus V Fig. 22. Reverse Recovery Charge Q Fig. 23. Peak Reverse Current I F F r RM Versus -di /dt Versus -di /dt F F 2.0 90 20 1.00 T = 100°C T = 100°C ns VVRJ = 300V V V IFV J = 30A V μst 1.5 trr FR15 FR 0.75fr Kf 80 tfr I= 60A F 1.0 I= 30A 10 0.50 F IRM IF= 15A 70 0.5 5 0.25 Q r 0.0 60 0 0.00 0 40 80 120 °C 160 0 200 400 600 A8/0μ0s 1000 0 200 400 600 A80/μ0s 1000 T -di /dt di /dt VJ F F Fig. 24. Dynamic Parameters Q, I Fig. 25. Recovery Time t Versus -di /dt Fig. 26. Peak Forward Voltage V and r RM rr F FR Versus T t Versus di /dt VJ fr F 1 K/W 0.1 Z thJC 0.01 0.001 DSEP 29-06 0.00001 0.0001 0.001 0.01 0.1 s 1 t Fig. 27. Transient Thermal Resistance Junction to Case Note: Fig. 21to Fig. 22 show typical values © 2009 IXYS CORPORATION, All Rights Reserved

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