High Voltage IGBT IXGF36N300 V = 3000V CES For Capacitor Discharge I = 36A C25 Applications V ≤≤≤≤≤ 2.7V CE(sat) ( Electrically Isolated Tab) ISOPLUS i4-PakTM Symbol Test Conditions Maximum Ratings V T = 25°C to 150°C 3000 V CES J 1 2 V Continuous ± 20 V Isolated Tab GES 5 V Transient ± 30 V GEM 1 = Gate 5 = Collector I T = 25°C 36 A C25 C 2 = Emitter I T = 110°C 18 A C110 C I T = 25°C, V = 20V, 1ms 400 A CM C GE SSOA V = 20V, T = 125°C, R = 2Ω I = 300 A GE VJ G CM (RBSOA) Clamped Inductive Load V ≤ 0.8 • V CE CES Features P T = 25°C 160 W C C (cid:122) Silicon Chip on Direct-Copper Bond T -55 ... +150 °C J (DCB) Substrate T 150 °C (cid:122) Isolated Mounting Surface JM T -55 ... +150 °C (cid:122) 4000V Electrical Isolation stg (cid:122) High Peak Current Capability T 1.6 mm (0.062 in.) from Case for 10s 300 °C L (cid:122) Low Saturation Voltage T Plastic Body for 10s 260 °C SOLD (cid:122) Molding Epoxies Meet UL 94 V-0 F Mounting Force 20..120/4.5..27 Nm/lb-in. Flammability Classification C V 50/60Hz, 1 minute 4000 V~ ISOL Weight 5 g Applications (cid:122) Capacitor Discharge (cid:122) Pulser Circuits Symbol Test Conditions Characteristic Values (T = 25°C, Unless Otherwise Specified) Min. Typ. Max. J Advantages BV I = 250μA, V = 0V 3000 V CES C GE V I = 250μA, V = V 3.0 5.0 V (cid:122) High Power Density GE(th) C CE GE (cid:122) Easy to Mount I V = 0.8 • V , V = 0V 50 μA CES CE CES GE Note 2 ,T = 125°C 2 mA J I V = 0V, V = ±20V ±200 nA GES CE GE V I = 36A, V = 15V, Note 1 2.7 V CE(sat) C GE I = 100A 5.2 V C © 2009 IXYS CORPORATION, All Rights Reserved DS99979C(11/09)

IXGF36N300 Symbol Test Conditions Characteristic Values ISOPLUS i4-PakTM (HV) Outline (T = 25°C, Unless Otherwise Specified) Min. Typ. Max. J g I = 36A, V = 10V, Note 1 15 25 S fs C CE I V = 15V, V = 20V, Note 1 360 A C(ON) GE CE C 2690 pF ies C V = 25V, V = 0V, f = 1MHz 123 pF oes CE GE C 34 pF res Q 136 nC g Q I = 30A, V = 15V, V = 600V 21 nC ge C GE CE Q 52 nC gc t 36 ns d(on) Resistive Switching Times Pin 1 = Gate t 185 ns PPiinn 23 == ECmoliltetcetror r I = 36A, V = 15V Tab 4 = Isolated t C GE 215 ns d(off) V = 1500V, R = 2Ω t CE G 540 ns f R 0.78 °C/W thJC R 0.15 °C/W thCS R 30 °C/W thJA Notes: 1. Pulse test, t < 300μs, duty cycle, d < 2%. 2. Device must be heatsunk for high-temperature leakage current measurements to avoid thermal runaway. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents:4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B27,071,537

IXGF36N300 Fig. 1. Output Characteristics @ TJ = 25ºC Fig. 2. Extended Output Characteristics @ TJ = 25ºC 80 400 VGE = 25V VGE = 25V 70 20V 350 20V 15V 15V 13V 60 300 11V 13V es 50 9V es 250 er er p p Am 40 Am 200 11V I - C 30 7V - IC150 9V 20 100 10 50 7V 5V 5V 0 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0 2 4 6 8 10 12 14 16 18 20 VCE - Volts VCE - Volts Fig. 4. Dependence of V on CE(sat) Fig. 3. Output Characteristics @ TJ = 125ºC Junction Temperature 80 1.8 VGE = 25V 70 20V VGE = 15V 15V 1.6 60 13V I C = 72A 11V d e z 1.4 peres 50 9V ormali m 40 N 1.2 I - AC 30 7V - E(sat) I C = 36A C 1.0 V 20 0.8 10 5V I C = 18A 0 0.6 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 -50 -25 0 25 50 75 100 125 150 VCE - Volts TJ - Degrees Centigrade Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage Fig. 6. Input Admittance 6.0 80 5.5 TJ = 25ºC 70 5.0 60 4.5 Volts 4.0 I C = 72A peres 50 V - CE 33..05 - IAmC 3400 T J = - 1 242550ºººCCC 36A 20 2.5 2.0 10 18A 1.5 0 5 6 7 8 9 10 11 12 13 14 15 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 VGE - Volts VGE - Volts © 2009 IXYS CORPORATION, All Rights Reserved

IXGF36N300 Fig. 7. Transconductance Fig. 8. Gate Charge 40 16 TJ = - 40ºC VCE = 600V 35 14 I C = 30A 30 25ºC 12 I G = 10mA s emen 25 125ºC olts 10 g - Sif s 1250 V - VGE 68 10 4 5 2 0 0 0 10 20 30 40 50 60 70 80 90 0 20 40 60 80 100 120 140 IC - Amperes QG - NanoCoulombs Fig. 9. Reverse-Bias Safe Operating Area Fig. 10. Capacitance 350 10,000 f = 1 MHz 300 ds Cies 250 a ar1,000 F s o ere 200 Pic mp e - I - AC150 acitanc 100 Coes 100 ap TJ = 125ºC C 50 RG = 2Ω dv / dt < 10V / ns Cres 0 10 500 750 1000 1250 1500 1750 2000 2250 2500 2750 3000 0 5 10 15 20 25 30 35 40 VCE - Volts VCE - Volts Fig. 11. Maximum Transient Thermal Impedance 1.000 W 0.100 C / - ºC h)J Z(t 0.010 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

IXGF36N300 Fig. 12. Resistive Turn-on Fig. 13. Resistive Turn-on Rise Time vs. Junction Temperature Rise Time vs. Drain Current 450 450 400 RG = 2Ω , VGE = 15V 400 VCE = 1500V 350 350 TJ = 125ºC ds ds on on RG = 2Ω , VGE = 15V osec300 osec300 VCE = 1500V n n Na250 I C = 72A Na250 t- r t - r 200 200 I C = 36A TJ = 25ºC 150 150 100 100 25 35 45 55 65 75 85 95 105 115 125 15 20 25 30 35 40 45 50 55 60 65 70 75 TJ - Degrees Centigrade IC - Amperes Fig. 14. Resistive Turn-on Fig. 15. Resistive Turn-off Switching Times vs. Gate Resistance Switching Times vs. Junction Temperature 10,000 1,000 1600 240 t r td(on) - - - - 1400 t f td(off) - - - - 230 TJ = 125ºC, VGE = 15V RG = 2Ω, VGE = 15V Nanoseconds 1,000 VCE = 1500V I C = I3 C6A = 72A 100 d(on) - Nanoset Nanoseconds11028000000 VCE = 1500V I C = 36A 222012000 d(off) - Nanoset t - r cond t - f 600 190 cond s 400 180 s 200 I C = 72A 170 100 10 0 160 1 10 100 1000 25 35 45 55 65 75 85 95 105 115 125 RG - Ohms TJ - Degrees Centigrade Fig. 16. Resistive Turn-off Fig. 17. Resistive Turn-off Switching Times vs. Drain Current Switching Times vs. Gate Resistance 2400 290 10,000 10,000 t f td(off) - - - - t f td(off) - - - - 2000 RG = 2Ω, VGE = 15V 270 TJ = 125ºC, VGE = 15V t - Nanoseconds f11268000000 TJ = 125 VºCCE = 1500V 222135000 d(off) - Nanosecondt t - Nanoseconds f1,000 VCE = 1500V I C = 36A I C = 72A 1,000 d(off) - Nanosecondt s s TJ = 25ºC 400 190 0 170 100 100 15 20 25 30 35 40 45 50 55 60 65 70 75 1 10 100 1000 IC - Amperes RG - Ohms © 2009 IXYS CORPORATION, All Rights Reserved IXYS REF: G_36N300(8P)11-23-09-D

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