Polar3TM HiPerFETTM IXFK98N50P3 V = 500V DSS Power MOSFET IXFX98N50P3 I = 98A D25 R  50m DS(on) t  250ns rr N-Channel Enhancement Mode Avalanche Rated TO-264 (IXFK) Fast Intrinsic Diode G Symbol Test Conditions Maximum Ratings D S V T = 25C to 150C 500 V Tab DSS J V T = 25C to 150C, R = 1M 500 V DGR J GS V Continuous  30 V PLUS247 (IXFX) GSS V Transient  40 V GSM I T = 25C 98 A D25 C I T = 25C, Pulse Width Limited by T 245 A DM C JM I T = 25C 49 A A C G E T = 25C 4.5 J D AS C S Tab P T = 25C 1300 W D C G = Gate D = Drain dv/dt IS  IDM, VDD  VDSS, TJ  150°C 35 V/ns S = Source Tab = Drain T -55 ... +150 C J T 150 C JM T -55 ... +150 C stg Features T Maximum Lead Temperature for Soldering 300 °C L T Plastic Body for 10s 260 °C Dynamic dv/dt Rating SOLD Avalanche Rated M Mounting Torque (TO-264) 1.13/10 Nm/lb.in d Fast Intrinsic Diode F Mounting Force (PLUS247) 20..120 /4.5..27 N/lb C Low Q G Weight TO-264 10 g Low R PLUS247 6 g Low DrDaS(ionn)-to-Tab Capacitance Low Package Inductance Advantages Symbol Test Conditions Characteristic Values  Easy to Mount (T = 25C Unless Otherwise Specified) Min. Typ. Max. J  Space Savings BV V = 0V, I = 3mA 500 V DSS GS D V V = V , I = 8mA 3.0 5.0 V GS(th) DS GS D Applications I V =  30V, V = 0V 200 nA GSS GS DS DC-DC Converters I V = V , V = 0V 25 A Battery Chargers DSS DS DSS GS T = 125C 1.5 mA Switch-Mode and Resonant-Mode J Power Supplies RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1 50 m Uninterrupted Power Supplies AC Motor Drives High Speed Power Switching Applications © 2014 IXYS CORPORATION, All Rights Reserved DS100317B(9/14)

IXFK98N50P3 IXFX98N50P3 Symbol Test Conditions Characteristic Values TO-264 AA Outline (T = 25C Unless Otherwise Specified) Min. Typ. Max. J g V = 10V, I = 0.5 • I , Note 1 55 90 S fs DS D D25 C 12.9 nF iss C V = 0V, V = 25V, f = 1MHz 1300 pF oss GS DS C 11 pF rss R Gate Input Resistance 1.2  Gi t 48 ns Terminals: 1 - Gate d(on) Resistive Switching Times 2 - Drain t 21 ns 3 - Source r V = 10V, V = 0.5 • V , I = 0.5 • I 4 - Drain t G S D S D S S D D 2 5 90 ns Dim. Millimeter Inches d(off) R = 1 (External) Min. Max. Min. Max. t G 12 ns f A 4.82 5.13 .190 .202 A1 2.54 2.89 .100 .114 Q 200 nC A2 2.00 2.10 .079 .083 g(on) b 1.12 1.42 .044 .056 Q V = 10V, V = 0.5 • V , I = 0.5 • I 63 nC b1 2.39 2.69 .094 .106 gs GS DS DSS D D25 b2 2.90 3.09 .114 .122 Q 62 nC c 0.53 0.83 .021 .033 gd D 25.91 26.16 1.020 1.030 R 0.096C/W E 19.81 19.96 .780 .786 thJC e 5.46 BSC .215 BSC R 0.15C/W J 0.00 0.25 .000 .010 thCS K 0.00 0.25 .000 .010 L 20.32 20.83 .800 .820 L1 2.29 2.59 .090 .102 P 3.17 3.66 .125 .144 Q 6.07 6.27 .239 .247 Q1 8.38 8.69 .330 .342 Source-Drain Diode R 3.81 4.32 .150 .170 R1 1.78 2.29 .070 .090 S 6.04 6.30 .238 .248 Symbol Test Conditions Characteristic Values T 1.57 1.83 .062 .072 (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J I V = 0V 98 A PLUS 247TM Outline S GS I Repetitive, Pulse Width Limited by T 390 A SM JM V I = I , V = 0V, Note 1 1.5 V SD F S GS t 250 ns rr I = 49A, -di/dt = 100A/s F Q 1.6  μC RM V = 100V, V = 0V I R GS 15.4 A RM Note 1. Pulse test, t  300s, duty cycle, d 2%. Terminals: 1 - Gate 2 - Drain 3 - Source Dim. Millimeter Inches Min. Max. Min. Max. A 4.83 5.21 .190 .205 A 2.29 2.54 .090 .100 1 A 1.91 2.16 .075 .085 2 b 1.14 1.40 .045 .055 b 1.91 2.13 .075 .084 1 b 2.92 3.12 .115 .123 2 C 0.61 0.80 .024 .031 D 20.80 21.34 .819 .840 E 15.75 16.13 .620 .635 e 5.45 BSC .215 BSC L 19.81 20.32 .780 .800 L1 3.81 4.32 .150 .170 Q 5.59 6.20 .220 0.244 R 4.32 4.83 .170 .190 IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents:4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B27,071,537

IXFK98N50P3 IXFX98N50P3 Fig. 1. Output Characteristics @ TJ = 25ºC Fig. 2. Extended Output Characteristics @ TJ = 25ºC 100 200 VGS = 10V VGS = 10V 90 180 8V 80 7V 160 70 140 mperes 5600 mperes110200 7V A A I - D 40 I - D 80 6V 30 60 20 40 6V 10 20 5V 5V 0 0 0 1 2 3 4 5 0 5 10 15 20 25 VDS - Volts VDS - Volts Fig. 4. RDS(on) Normalized to ID = 49A Value vs. Fig. 3. Output Characteristics @ TJ = 125ºC Junction Temperature 100 3.4 90 V G S = 170VV 3.0 VGS = 10V 80 2.6 70 zed I D = 98A es 60 mali 2.2 I - AmperD 4500 6V - NorDS(on) 11..48 I D = 49A R 30 1.0 20 5V 0.6 10 0 0.2 0 2 4 6 8 10 12 -50 -25 0 25 50 75 100 125 150 V - Volts T - Degrees Centigrade DS J Fig. 5. RDS(on) Normalized to ID = 49A Value vs. Fig. 6. Maximum Drain Current vs. Drain Current Case Temperature 3.4 110 VGS = 10V 100 3.0 90 d 2.6 TJ = 125ºC 80 e ormaliz 2.2 peres 6700 N m - S(on) 1.8 I - AD 4500 D R 1.4 30 1.0 TJ = 25ºC 20 10 0.6 0 0 20 40 60 80 100 120 140 160 180 200 -50 -25 0 25 50 75 100 125 150 I - Amperes T - Degrees Centigrade D C © 2014 IXYS CORPORATION, All Rights Reserved

IXFK98N50P3 IXFX98N50P3 Fig. 7. Input Admittance Fig. 8. Transconductance 140 160 TJ = - 40ºC 120 140 TJ = 125ºC 25ºC 120 100 - 40ºC 25ºC eres 80 mens100 125ºC I - AmpD 60 g - Sief s 6800 40 40 20 20 0 0 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 0 20 40 60 80 100 120 140 V - Volts I - Amperes GS D Fig. 9. Forward Voltage Drop of Intrinsic Diode Fig. 10. Gate Charge 300 10 9 VDS = 250V 250 I D = 49A 8 I G = 10mA 7 200 s - AmpereS 150 V - VoltsGS 456 I 100 TJ = 125ºC 3 50 TJ = 25ºC 2 1 0 0 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 0 20 40 60 80 100 120 140 160 180 200 VSD - Volts QG - NanoCoulombs Fig. 11. Capacitance Fig. 12. Forward-Bias Safe Operating Area 100,000 1000 f = 1 MHz RDS(on) Limit Ciss s d10,000 100 a ar 100µs F o c nce - Pi 1,000 Coss mperes 10 a A acit 100 - D 1 p I a 1ms C 10 0.1 TJ = 150ºC Crss TC = 25ºC 10ms Single Pulse 1 0.01 0 5 10 15 20 25 30 35 40 10 100 1,000 V - Volts V - Volts DS DS IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

IXFK98N50P3 IXFX98N50P3 Fig. 13. Maximum Transient Thermal Impedance 1 Fig. 13. Maximum Transient Thermal Impedance AAAAA 0.2 0.1 W C / - ºC h)J 0.01 Z(t 0.001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds © 2014 IXYS CORPORATION, All Rights Reserved IXYS REF: F_98N50P3(W9-W38) 9-25-14

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