Advance Technical Information HiperFETTM IXFT30N50Q3 V = 500V DSS Power MOSFETs IXFH30N50Q3 I = 30A D25 Q3-Class R ≤≤≤≤≤ 200mΩΩΩΩΩ DS(on) N-Channel Enhancement Mode Avalanche Rated TO-268 (IXFT) Fast Intrinsic Rectifier G S D (Tab) Symbol Test Conditions Maximum Ratings V T = 25°C to 150°C 500 V DSS J TO-247 (IXFH) V T = 25°C to 150°C, R = 1MΩ 500 V DGR J GS V Continuous ± 20 V GSS V Transient ± 30 V GSM I T = 25°C 30 A D25 C G I T = 25°C, Pulse Width Limited by T 90 A D D (Tab) DM C JM S I T = 25°C 30 A A C E T = 25°C 1.5 J G = Gate D = Drain AS C S = Source Tab = Drain dv/dt I ≤ I , V ≤ V , T ≤ 150°C 50 V/ns S DM DD DSS J P T = 25°C 690 W D C T -55 ... +150 °C J T 150 °C Features JM T -55 ... +150 °C stg (cid:122) Low Intrinsic Gate Resistance T 1.6mm (0.062in.) from Case for 10s 300 °C L (cid:122) International Standard Packages Tsold Plastic Body for 10 seconds 260 °C (cid:122) Low Package Inductance M Mounting Torque (TO-247) 1.13 / 10 Nm/lb.in. (cid:122) Fast Intrinsic Rectifier d (cid:122) Low R and Q Weight TO-268 4.0 g DS(on) G TO-247 6.0 g Advantages (cid:122) High Power Density (cid:122) Easy to Mount Symbol Test Conditions Characteristic Values (cid:122) Space Savings (T = 25°C Unless Otherwise Specified) Min. Typ. Max. J BV V = 0V, I = 1mA 500 V DSS GS D Applications V V = V , I = 4mA 3.5 6.5 V GS(th) DS GS D (cid:122) DC-DC Converters I V = ±20V, V = 0V ±100 nA (cid:122) Battery Chargers GSS GS DS (cid:122) Switch-Mode and Resonant-Mode I V = V , V = 0V 10 μA DSS DS DSS GS Power Supplies TJ = 125°C 500 μA (cid:122) DC Choppers R V = 10V, I = 0.5 • I , Note 1 200 mΩ (cid:122) Temperature and Lighting Controls DS(on) GS D D25 © 2011 IXYS CORPORATION, All Rights Reserved DS100338(05/11)

IXFT30N50Q3 IXFH30N50Q3 Symbol Test Conditions Characteristic Values TO-268 Outline (T = 25°C Unless Otherwise Specified) Min. Typ. Max. J g V = 20V, I = 0.5 • I , Note 1 12 20 S fs DS D D25 C 3200 pF iss C V = 0V, V = 25V, f = 1MHz 435 pF oss GS DS C 43 pF rss R Gate Input Resistance 0.17 Ω Gi t 14 ns d(on) Resistive Switching Times t 14 ns r Terminals: 1 - Gate 2,4 - Drain t VGS = 10V, VDS = 0.5 • VDSS, I D = 0 . 5 • I D 2 5 26 ns 3 - Source d(off) t R = 2Ω (External) 9 ns f G Q 62 nC g(on) Q V = 10V, V = 0.5 • V , I = 0.5 • I 21 nC gs GS DS DSS D D25 Q 26 nC gd R 0.18 °C/W thJC R TO-247 0.21 °C/W thCS Source-Drain Diode Symbol Test Conditions Characteristic Values (T = 25°C Unless Otherwise Specified) Min. Typ. Max. J I V = 0V 30 A TO-247 Outline S GS I Repetitive, Pulse Width Limited by T 120 A SM JM V I = I , V = 0V, Note 1 1.4 V SD F S GS t 250 ns ∅ P rr I = 15A, -di/dt = 100A/μs 1 2 3 I F 10.4 A RM V = 1 0 0 V , V = 0 V Q R GS 1.05 μC RM e Terminals: 1 - Gate 2 - Drain Note 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%. 3 - Source Dim. Millimeter Inches Min. Max. Min. Max. A 4.7 5.3 .185 .209 A 2.2 2.54 .087 .102 1 A 2.2 2.6 .059 .098 2 b 1.0 1.4 .040 .055 b 1.65 2.13 .065 .084 ADVANCE TECHNICAL INFORMATION b1 2.87 3.12 .113 .123 2 C .4 .8 .016 .031 The product presented herein is under development. The Technical Specifications offered are derived D 20.80 21.46 .819 .845 from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a E 15.75 16.26 .610 .640 "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test e 5.20 5.72 0.205 0.225 conditions, and dimensions without notice. L 19.81 20.32 .780 .800 L1 4.50 .177 ∅P 3.55 3.65 .140 .144 Q 5.89 6.40 0.232 0.252 R 4.32 5.49 .170 .216 S 6.15 BSC 242 BSC IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents:4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B27,071,537

IXFT30N50Q3 IXFH30N50Q3 Fig. 1. Output Characteristics @ TJ = 25ºC Fig. 2. Extended Output Characteristics @ TJ = 25ºC 30 V G S = 190VV 70 VGS = 10V 25 60 9V 20 50 mperes 15 8V mperes 40 A A I - D I - D 30 8V 10 7V 20 5 7V 10 6V 6V 0 0 0 1 2 3 4 5 6 0 5 10 15 20 25 30 VDS - Volts VDS - Volts Fig. 4. R Normalized to I = 15A Value vs. DS(on) D Fig. 3. Output Characteristics @ T = 125ºC J Junction Temperature 30 3.4 VGS = 10V 8V VGS = 10V 3.0 25 2.6 d 20 ze I D = 30A s ali 2.2 e 7V m I - AmperD 15 - NorS(on) 11..48 I D = 15A 10 RD 6V 1.0 5 0.6 5V 0 0.2 0 2 4 6 8 10 12 14 -50 -25 0 25 50 75 100 125 150 VDS - Volts TJ - Degrees Centigrade Fig. 5. R Normalized to I = 15A Value vs. Fig. 6. Maximum Drain Current vs. DS(on) D Drain Current Case Temperature 35 3.4 VGS = 10V 3.0 30 d 2.6 25 ze TJ = 125ºC ormali 2.2 peres 20 N m - on)1.8 - AD 15 S( I D R 1.4 10 TJ = 25ºC 1.0 5 0.6 0 0 10 20 30 40 50 60 -50 -25 0 25 50 75 100 125 150 ID - Amperes TC - Degrees Centigrade © 2011 IXYS CORPORATION, All Rights Reserved

IXFT30N50Q3 IXFH30N50Q3 Fig. 7. Input Admittance Fig. 8. Transconductance 45 45 40 40 TJ = - 40ºC 35 35 25ºC 30 s 30 s n e e I - AmperD 2205 TJ = 125ºC g - Siemf s 2205 125ºC 15 25ºC 15 - 40ºC 10 10 5 5 0 0 3.5 4 4.5 5 5.5 6 6.5 7 7.5 8 8.5 9 0 5 10 15 20 25 30 35 40 45 50 VGS - Volts ID - Amperes Fig. 9. Forward Voltage Drop of Intrinsic Diode Fig. 10. Gate Charge 100 16 VDS = 250V 14 I D = 15A 80 12 I G = 10mA es 60 s 10 er olt p V Am - S 8 - S 40 VG I 6 TJ = 125ºC 4 20 TJ = 25ºC 2 0 0 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 0 10 20 30 40 50 60 70 80 90 VSD - Volts QG - NanoCoulombs Fig. 11. Capacitance Fig. 12. Forward-Bias Safe Operating Area 10000 100 RDS(on) Limit 25µs s Ciss 100µs d a ar1000 10 ance - PicoF Coss - AmperesD cit 100 I 1 a p a 1ms C TJ = 150ºC f = 1 MHz Crss TSCin g=l e2 5PºuCls e 10 0.1 0 5 10 15 20 25 30 35 40 10 100 1,000 VDS - Volts VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

IXFT30N50Q3 IXFH30N50Q3 Fig. 13. Maximum Transient Thermal Impedance 1 0.1 W C / - ºC Z(th)J 0.01 0.001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds © 2011 IXYS CORPORATION, All Rights Reserved IXYS REF: F_30N50Q3(Q6)05-17-11

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