HiPerFETTM IXFN 70N60Q2 V = 600 V DSS Power MOSFET I = 70 A D25 ΩΩΩΩΩ R = 80 m N-Channel Enhancement Mode DS(on) ≤≤≤≤≤ t 250 ns Avalanche Rated, Low Q , Low Intrinsic R rr g g High dV/dt, Low t rr Preliminary Data Sheet miniBLOC, SOT-227 B (IXFN) E153432 Symbol Test Conditions Maximum Ratings S G V T = 25°C to 150°C 600 V VDSS TJ = 25°C to 150°C; R = 1 MΩ 600 V DGR J GS V Continuous ±30 V S VGS Transient ±40 V D GSM I T = 25°C 70 A ID25 TC = 25°C, pulse width limited by T 280 A G = Gate D = Drain IDM TC = 25°C JM 70 A S = Source AR C E T = 25°C 60 mJ Either Source terminal at miniBLOC can be used EAR TC = 25°C 5.0 J as Main or Kelvin Source AS C dv/dt I ≤ I , di/dt ≤ 100 A/µs, V ≤ V 20 V/ns TS ≤ 1D5M0°C, R = 2 Ω DD DSS Features J G P T = 25°C 890 W •Double metal process for low D C gate resistance T -55 ... +150 °C J (cid:127)miniBLOC, with Aluminium nitride T 150 °C TJM -55 ... +150 °C isolation stg (cid:127)Unclamped Inductive Switching (UIS) V 50/60 Hz, RMS, t = 1 minute 2500 V rated ISOL (cid:127) M Mounting torque 1.5/13 Nm/lb.in. Low package inductance d Terminal connection torque 1.5/13 Nm/lb.in. (cid:127) Fast intrinsic Rectifier Weight 30 g Applications (cid:127) DC-DC converters (cid:127) Switched-mode and resonant-mode Symbol Test Conditions Characteristic Values (T = 25°C, unless otherwise specified) power supplies J min. typ. max. (cid:127)DC choppers (cid:127) V V = 0 V, I = 1mA 600 V Pulse generators DSS GS D V V = V , I = 8mA 2.5 5.0 V Advantages GS(th) DS GS D I V = ±30 V, V = 0 ±200 nA (cid:127)Easy to mount GSS GS DS (cid:127) Space savings I V = V T = 25°C 50 µA (cid:127) DSS DS DSS J High power density V = 0 V T = 125°C 3 mA GS J R V = 10 V, I = 0.5 • I 80 mΩ DS(on) GS D D25 Note 1 © 2003 IXYS All rights reserved DS99029A(06/03)

IXFN70N60Q2 Symbol Test Conditions Characteristic Values (T = 25°C, unless otherwise specified) miniBLOC, SOT-227 B Outline J min. typ. max. g V = 10 V; I = 0.5 • I Note 1 36 50 S fs DS D D25 C 7200 pF iss C V = 0 V, V = 25 V, f = 1 MHz 1300 pF oss GS DS C 290 pF rss t 26 ns d(on) t V = 10 V, V = 0.5 • V , I = 0.5 • I 25 ns r GS DS DSS D D25 t R = 1 Ω (External) 60 ns M4 screws (4x) supplied d(off) G Dim. Millimeter Inches t 12 ns f Min. Max. Min. Max. A 31.50 31.88 1.240 1.255 Q 265 nC B 7.80 8.20 0.307 0.323 G(on) C 4.09 4.29 0.161 0.169 Q V = 10 V, V = 0.5 • V , I = 0.5 • I 57 nC D 4.09 4.29 0.161 0.169 GS GS DS DSS D D25 E 4.09 4.29 0.161 0.169 Q 120 nC GD F 14.91 15.11 0.587 0.595 G 30.12 30.30 1.186 1.193 R 0.14 K/W H 38.00 38.23 1.496 1.505 thJC J 11.68 12.22 0.460 0.481 R 0.05 K/W K 8.92 9.60 0.351 0.378 thCK L 0.76 0.84 0.030 0.033 M 12.60 12.85 0.496 0.506 N 25.15 25.42 0.990 1.001 O 1.98 2.13 0.078 0.084 Source-Drain Diode Characteristic Values P 4.95 5.97 0.195 0.235 (T = 25°C, unless otherwise specified) Q 26.54 26.90 1.045 1.059 J R 3.94 4.42 0.155 0.174 Symbol Test Conditions min. typ. max. S 4.72 4.85 0.186 0.191 T 24.59 25.07 0.968 0.987 U -0.05 0.1 -0.002 0.004 I V = 0 V 70 A S GS I Repetitive; 280 A SM pulse width limited by T JM V I = I , V = 0 V, Note 1 1.5 V SD F S GS t 250 ns rr I = 25A Q -Fdi/dt = 100 A/µs 1.2 µC RM V = 100 V I R 8 A RM Note: 1. Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1 of the following U.S. patents: 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343

IXFN70N60Q2 Fig. 1. Output Characteristics Fig. 2. Extended Output Characteristics @ 25 Deg. C @ 25 deg. C 70 140 VG S = 1 0V VG S = 1 0V 60 7V 120 7V 50 6V 100 es es mper 40 mper 80 6V I - AD 2300 I - AD 4600 5V 5V 10 20 0 0 0 1 2 3 4 5 6 7 0 4 8 12 16 20 V - Volts V - Volts DS DS Fig. 3. Output Characteristics Fig. 4. R Normalized to I Value vs. DS(on) D25 @ 125 Deg. C Junction Temperature 70 2.8 V = 1 0V G S V = 1 0V 60 7V 2.5 G S 6V d 2.2 50 e es aliz 1.9 mper 40 5V Norm 1.6 I D = 70A A I - D 30 - S (on) 1.3 I D = 35A 20 RD 1 10 0.7 0 0.4 0 3 6 9 12 15 -50 -25 0 25 50 75 100 125 150 V - Volts T - Degrees Centigrade DS J Fig. 5. R Normalized to I Fig. 6. Drain Current vs. Case DS(on) D25 Temperature Value vs. I D 2.8 80 V = 1 0V 2.5 G S 70 T = 1 25ºC J d 60 e 2.2 z ali es 50 m 1.9 er Nor mp 40 - S (on) 1.6 I - AD 30 RD 1.3 20 1 TJ = 25ºC 10 0.7 0 0 20 40 60 80 100 120 140 -50 -25 0 25 50 75 100 125 150 I - Amperes T - Degrees Centigrade D C © 2003 IXYS All rights reserved

IXFN70N60Q2 Fig. 7. Input Admittance Fig. 8. Transconductance 100 90 90 80 80 70 TJ = -40ºC 25ºC 70 es ns 60 1 25ºC per 60 me 50 m 50 e A Si I - D 3400 TJ = 1 20ºC g - f s 3400 25ºC 20 20 -40ºC 10 10 0 0 3 3.5 4 4.5 5 5.5 6 6.5 0 10 20 30 40 50 60 70 80 90 100 V - Volts I - Amperes GS D Fig. 9. Source Current vs. Source-To-Drain Fig. 10. Gate Charge Voltage 140 10 V = 300V D S 120 I D = 35A 8 I = 1 0mA G 100 s e per 80 olts 6 m V I - AS 60 TJ = 1 25ºC V - G S 4 40 T = 25ºC 2 J 20 0 0 0.2 0.4 0.6 0.8 1 1.2 0 40 80 120 160 200 240 280 V - Volts Q - nanoCoulombs SD G Fig. 12. Maximum Transient Thermal Resistance Fig. 11. Capacitance 10000 0.16 0.14 Ciss F f = 1 MHz 0.12 p ce - C/W) 0.1 n º cita 1000 Coss -(C 0.08 Capa R (th) J 0.06 0.04 Crss 0.02 100 0 0 5 10 15 20 25 30 35 40 1 10 100 1000 V - Volts Pulse Width - milliseconds DS IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1 of the following U.S. patents: 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343

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