HiperFETTM Power IXFK180N10 V = 100V DSS MOSFETs IXFX180N10 I = 180A D25 R ≤≤≤≤≤ 8mΩΩΩΩΩ DS(on) Single MOSFET Die N-Channel Enhancement Mode Avalanche Rated TO-264 (IXFK) Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings V T = 25°C to 150°C 100 V DSS J G D VDGR TJ = 25°C to 150°C, RGS = 1MΩ 100 V S (TAB) V Continuous ±20 V GSS V Transient ±30 V GSM PLUS247 (IXFX) I T = 25°C ( Chip Capabitlty) 180 A D25 C I Leads Current Limit, RMS 160 A LRMS I T = 25°C, Pulse Width Limited by T 720 A DM C JM I T = 25°C 180 A A C E T = 25°C 3 J AS C (TAB) dV/dt I ≤ I , V ≤ V , T ≤ 150°C 5 V/ns S DM DD DSS J P T = 25°C 560 W G = Gate D = Drain D C S = Source TAB = Drain T -55 ... +150 °C J T 150 °C JM T -55 ... +150 °C stg Features T 1.6mm (0.062 in.) from Case for 10s 300 °C L T Plastic Body for 10s 260 °C (cid:122)International Standard Packages SOLD M Mounting Force (PLUS247) 20..120/4.5..27 N/lb. (cid:122)High Current Handling Capability d MountingTorque (TO-264) 1.13/10 Nm/lb.in. (cid:122)Avalanche Rated (cid:122) Low R HDMOSTM Process Weight PLUS247 6 g DS(on) TO-264 10 g (cid:122)Fast intrinsic diode (cid:122)Low Package Inductance Advantages (cid:122) Easy to Mount Symbol Test Conditions Characteristic Values (cid:122) Space Savings (T = 25°C, Unless Otherwise Specified) Min. Typ. Max. (cid:122) High Power Density J BV V = 0V, I = 3mA 100 V Applications DSS GS D V V = V , I = 8mA 2.0 4.0 V GS(th) DS GS D (cid:122)DC-DC Converters IGSS VGS = ±20V, VDS = 0V ±100 nA (cid:122)Battery Chargers I V = V 100 μA (cid:122)Switched-Mode and Resonant-Mode DSS DS DSS Power Supplies V = 0V T = 125°C 2 mA GS J (cid:122)DC Choppers R V = 10V, I = 0.5 • I , Note 1 8 mΩ (cid:122)AC Motor Drives DS(on) GS D D25 (cid:122)Temperature and Lighting Controls © 2009 IXYS CORPORATION, All Rights Reserved DS98552D(02/09)

IXFK180N10 IXFX180N10 Symbol Test Conditions Characteristic Values TO-264 (IXFK) Outline (T = 25°C, Unless Otherwise Specified) Min. Typ. Max. J g V = 10V, I = 60A, Note 1 45 76 S fs DS D C 10.90 nF iss C V = 0V, V = 25V, f = 1MHz 3.55 nF oss GS DS C 1.94 nF rss t Resistive Switching Times 50 ns d(on) t 90 ns r V = 10V, V = 0.5 • V , I = 0.5 • I t GS DS DSS D D25 140 ns d(off) t R = 1Ω (External) 65 ns f G Q 390 nC g(on) Q V = 10V, V = 0.5 • V , I = 0.5 • I 55 nC gs GS DS DSS D D25 Q 195 nC gd R 0.22 °C/W thJC R 0.15 °C/W thCS Source-Drain Diode Symbol Test Conditions Characteristic Values (T = 25°C, Unless Otherwise Specified) Min. Typ. Max. J I V = 0V 180 A S GS I Repetitive, Pulse Width Limited by T 720 A SM JM V I = 100A, V = 0V, Note 1 1.5 V PLUS 247TM (IXFX) Outline SD F GS tQrr IF = 90A, -di/dt = 100A/μs 1 . 1 250 μnCs RM V = 50V, V = 0V I R GS 13 A RM Note 1: Pulse Test, t ≤ 300μs; Duty Cycle, d ≤ 2%. Terminals: 1 - Gate 2 - Drain (Collector) 3 - Source (Emitter) 4 - Drain (Collector) Dim. Millimeter Inches Min. Max. Min. Max. A 4.83 5.21 .190 .205 A 2.29 2.54 .090 .100 1 A 1.91 2.16 .075 .085 2 b 1.14 1.40 .045 .055 b 1.91 2.13 .075 .084 1 b 2.92 3.12 .115 .123 2 C 0.61 0.80 .024 .031 D 20.80 21.34 .819 .840 E 15.75 16.13 .620 .635 e 5.45 BSC .215 BSC L 19.81 20.32 .780 .800 L1 3.81 4.32 .150 .170 Q 5.59 6.20 .220 0.244 R 4.32 4.83 .170 .190 IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents:4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B27,071,537

IXFK180N10 IXFX180N10 Fig. 1. Output Characteristics Fig. 2. Extended Output Characteristics @ 25ºC @ 25ºC 180 350 VGS = 10V VGS = 10V 160 9V 9V 8V 300 140 250 8V 120 es 7V es mper 100 mper 200 7V I - AD 6800 6V I - AD 150 6V 100 40 20 50 5V 5V 0 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 VDS - Volts VDS - Volts Fig. 3. Output Characteristics Fig. 4. RDS(on) Normalized to ID = 90A Value @ 125ºC vs. Junction Temperature 180 2.2 VGS = 10V 160 9V 2.0 VGS = 10V 8V 140 1.8 d peres 110200 7V ormalize 1.6 I D = 180A I - AmD 80 6V - NS(on) 11..24 I D = 90A 60 D R 1.0 40 5V 20 0.8 0 0.6 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 -50 -25 0 25 50 75 100 125 150 VDS - Volts TJ - Degrees Centigrade Fig. 5. R Normalized to I = 90A Value Fig. 6. Maximum Drain Current vs. DS(on) D vs. Drain Current Case Temperature 2.0 180 External Lead Current Limit 1.9 VGS = 10V 160 1.8 15V - - - - - 140 d 1.7 TJ = 125ºC e maliz 1.6 es 120 or 1.5 per 100 N 1.4 m - S(on) 1.3 I - AD 80 RD 1.2 60 1.1 40 1.0 TJ = 25ºC 20 0.9 0.8 0 0 30 60 90 120 150 180 210 240 270 300 330 -50 -25 0 25 50 75 100 125 150 ID - Amperes TC - Degrees Centigrade © 2009 IXYS CORPORATION, All Rights Reserved IXYS REF: F_180N10(9X)2-24-09-B

IXFK180N10 IXFX180N10 Fig. 7. Input Admittance Fig. 8. Transconductance 300 140 275 130 TJ = - 40ºC 250 120 TJ = - 40ºC 110 225 25ºC 25ºC 100 200 125ºC eres 175 mens 8900 125ºC p e m 150 Si 70 I - AD 125 g - f s 5600 100 40 75 30 50 20 25 10 0 0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 0 50 100 150 200 250 300 VGS - Volts ID - Amperes Fig. 9. Forward Voltage Drop of Intrinsic Diode Fig. 10. Gate Charge 350 10 9 VDS = 50V 300 I D = 90A 8 I G = 10mA 250 7 - AmperesS125000 TJ = 125ºC V - VoltsGS 456 I 100 TJ = 25ºC 3 2 50 1 0 0 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 0 50 100 150 200 250 300 350 400 VSD - Volts QG - NanoCoulombs Fig. 12. Maximum Transient Thermal Fig. 11. Capacitance Impedance 100 1.000 f = 1 MHz s d a Far W 0.100 ano Ciss C / citance - N 10 Coss Z - º(th)JC0.010 a p a C Crss 1 0.001 0 5 10 15 20 25 30 35 40 0.0001 0.001 0.01 0.1 1 10 VDS - Volts Pulse Width - Seconds IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

IXFK180N10 IXFX180N10 Fig. 13. Forward-Bias Safe Operating Area Fig. 14. Forward-Bias Safe Operating Area @ T = 25ºC @ T = 75ºC C C 1,000 1,000 RDS(on) Limit RDS(on) Limit 25µs 100µs 25µs 100 100 100µs s pere External Lead Limit 1ms eres m p 1ms A m I - D 10ms - AD I 10ms 10 100ms 10 100ms DC TJ = 150ºC TJ = 150ºC DC TC = 25ºC TC = 75ºC Single Pulse Single Pulse 1 1 1 10 100 1 10 100 VDS - Volts VDS - Volts © 2009 IXYS CORPORATION, All Rights Reserved IXYS REF: F_180N10(9X)2-24-09-B

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