Advance Technical Information GigaMOSTM IXFK140N25T V = 250V DSS Power MOSFET IXFX140N25T I = 140A D25 R ≤≤≤≤≤ 17mΩΩΩΩΩ DS(on) t ≤≤≤≤≤ 200ns N-Channel Enhancement Mode rr Avalanche Rated Fast Intrinsic Diode TO-264 (IXFK) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 250 V G V T = 25°C to 150°C, R = 1MΩ 250 V D (TAB) DGR J GS S V Continuous ± 20 V GSS V Transient ± 30 V PLUS247 (IXFX) GSM I T = 25°C 140 A D25 C I T = 25°C, Pulse Width Limited by T 380 A DM C JM I T = 25°C 40 A A C E T = 25°C 3 J AS C P T = 25°C 960 W D C (TAB) dV/dt I ≤ I , V ≤ V , T ≤ 150°C 20 V/ns S DM DD DSS J T -55 ... +150 °C G = Gate D = Drain TJ 150 °C S = Source TAB = Drain JM T -55 ... +150 °C stg T 1.6mm (0.062 in.) from Case for 10s 300 °C Features L T Plastic Body for 10s 260 °C SOLD M Mounting Torque (TO-264) 1.13/10 Nm/lb.in. (cid:122)International Standard Packages d (cid:122)High Current Handling Capability F Mounting Force (PLUS247) 20..120 /4.5..27 N/lb. C (cid:122)Fast Intrinsic Diode Weight TO-264 10 g (cid:122)Avalanche Rated PLUS247 6 g (cid:122) Low R DS(on) Advantages (cid:122) Easy to Mount Symbol Test Conditions Characteristic Values (cid:122) Space Savings (T = 25°C Unless Otherwise Specified) Min. Typ. Max. J (cid:122) High Power Density BV V = 0V, I = 3mA 250 V DSS GS D Applications V V = V , I = 4mA 2.5 5.0 V GS(th) DS GS D (cid:122)DC-DC Converters I V = ± 20V, V = 0V ± 200 nA GSS GS DS (cid:122)Battery Chargers I V = V , V = 0V 50 µA (cid:122)Switched-Mode and Resonant-Mode DSS DS DSS GS T = 125°C 3 mA Power Supplies J (cid:122)DC Choppers RDS(on) VGS = 10V, ID = 60A, Note 1 17 mΩ (cid:122)AC Motor Drives (cid:122)Uninterruptible Power Supplies (cid:122)High Speed Power Switching Applications © 2009 IXYS CORPORATION, All Rights Reserved DS100135(03/09)

IXFK140N25T IXFX140N25T Symbol Test Conditions Characteristic Values TO-264 (IXFK) Outline (T = 25°C Unless Otherwise Specified) Min. Typ. Max. J g V = 10V, I = 60A, Note 1 80 135 S fs DS D C 19 nF iss C V = 0V, V = 25V, f = 1MHz 1500 pF oss GS DS C 185 pF rss t 33 ns d(on) Resistive Switching Times t 29 ns r V = 15V, V = 0.5 • V , I = 0.5 • I t G S D S D S S D D 2 5 92 ns d(off) R = 1Ω (External) G t 22 ns f Dim. Millimeter Inches Q 255 nC Min. Max. Min. Max. g(on) A 4.82 5.13 .190 .202 Q V = 10V, V = 0.5 • V , I = 0.5 • I 90 nC A1 2.54 2.89 .100 .114 gs GS DS DSS D D25 A2 2.00 2.10 .079 .083 Q 62 nC b 1.12 1.42 .044 .056 gd b1 2.39 2.69 .094 .106 R 0.13 °C/W b2 2.90 3.09 .114 .122 thJC c 0.53 0.83 .021 .033 R 0.15 °C/W D 25.91 26.16 1.020 1.030 thCS E 19.81 19.96 .780 .786 e 5.46 BSC .215 BSC J 0.00 0.25 .000 .010 K 0.00 0.25 .000 .010 L 20.32 20.83 .800 .820 L1 2.29 2.59 .090 .102 P 3.17 3.66 .125 .144 Q 6.07 6.27 .239 .247 Source-Drain Diode Q1 8.38 8.69 .330 .342 R 3.81 4.32 .150 .170 R1 1.78 2.29 .070 .090 Symbol Test Conditions Characteristic Values S 6.04 6.30 .238 .248 T 1.57 1.83 .062 .072 (T = 25°C, Unless Otherwise Specified) Min. Typ. Max. J I V = 0V 140 A PLUS 247TM (IXFX) Outline S GS I Repetitive, Pulse Width Limited by T 560 A SM JM V I = 60A, V = 0V, Note 1 1.3 V SD F GS t 200 ns rr I = 70A, -di/dt = 100A/µs Q F 0.60 µC RM V = 75V, V = 0V I R GS 9.30 A RM Note 1: Pulse Test, t ≤ 300µs; Duty Cycle, d ≤ 2%. Terminals: 1 - Gate 2 - Drain (Collector) 3 - Source (Emitter) 4 - Drain (Collector) Dim. Millimeter Inches Min. Max. Min. Max. A 4.83 5.21 .190 .205 A 2.29 2.54 .090 .100 ADVANCE TECHNICAL INFORMATION 1 A 1.91 2.16 .075 .085 2 The product presented herein is under development. The Technical Specifications offered are derived b 1.14 1.40 .045 .055 from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a b 1.91 2.13 .075 .084 1 "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test b2 2.92 3.12 .115 .123 conditions, and dimensions without notice. C 0.61 0.80 .024 .031 D 20.80 21.34 .819 .840 E 15.75 16.13 .620 .635 e 5.45 BSC .215 BSC L 19.81 20.32 .780 .800 L1 3.81 4.32 .150 .170 Q 5.59 6.20 .220 0.244 R 4.32 4.83 .170 .190 IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents:4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B27,071,537

IXFK140N25T IXFX140N25T Fig. 1. Output Characteristics Fig. 2. Extended Output Characteristics @ 25ºC @ 25ºC 140 320 VGS = 10V VGS = 10V 120 8V 280 8V 7V 7V 240 100 es es 200 er 80 6V er mp mp 160 A A I - D 60 I - D120 6V 40 80 20 5V 40 5V 0 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 0 2 4 6 8 10 12 14 16 18 VDS - Volts VDS - Volts Fig. 3. Output Characteristics Fig. 4. RDS(on) Normalized to ID = 70A Value @ 125ºC vs. Junction Temperature 140 2.8 V G S = 1 80VV 2.6 VGS = 10V 120 7V 2.4 2.2 peres10800 6V ormalized 12..80 I D = 140A - AmD 60 - Non) 11..46 I D = 70A I S( RD 1.2 40 1.0 5V 0.8 20 0.6 0 0.4 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 -50 -25 0 25 50 75 100 125 150 VDS - Volts TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 70A Value Fig. 6. Maximum Drain Current vs. vs. Drain Current Case Temperature 2.8 160 2.6 VGS = 10V 140 2.4 TJ = 125ºC 120 ed 2.2 z mali 2.0 eres100 Nor 1.8 mp 80 - S(on) 1.6 I - AD 60 D R 1.4 40 1.2 1.0 TJ = 25ºC 20 0.8 0 0 40 80 120 160 200 240 280 320 -50 -25 0 25 50 75 100 125 150 ID - Amperes TC - Degrees Centigrade © 2009 IXYS CORPORATION, All Rights Reserved IXYS REF:F_140N25T(9W)3-25-09

IXFK140N25T IXFX140N25T Fig. 7. Input Admittance Fig. 8. Transconductance 180 220 TJ = - 40ºC 160 200 140 TJ = 125ºC 180 25ºC 160 - 40ºC 25ºC 120 s mperes 100 Siemen112400 125ºC I - AD 80 g - f s 18000 60 60 40 40 20 20 0 0 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 0 20 40 60 80 100 120 140 160 180 200 VGS - Volts ID - Amperes Fig. 9. Forward Voltage Drop of Intrinsic Diode Fig. 10. Gate Charge 350 10 9 VDS = 125V 300 I D = 70A 8 I G = 10mA 250 7 - AmperesS125000 V - VoltsGS 456 I 100 TJ = 125ºC 3 2 50 TJ = 25ºC 1 0 0 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 0 30 60 90 120 150 180 210 240 270 VSD - Volts QG - NanoCoulombs Fig. 11. Capacitance Fig. 12. Forward-Bias Safe Operating Area 100,000 1,000 f = 1 MHz Ciss RDS(on) Limit s d a Far10,000 100 25µs Pico eres acitance - 1,000 Coss I - AmpD 10 100µs p a 1ms C TJ = 150ºC Crss TC = 25ºC Single Pulse 100 1 0 5 10 15 20 25 30 35 40 1 10 100 1000 VDS - Volts VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

IXFK140N25T IXFX140N25T Fig. 13. Maximum Transient Thermal Impedance 1.00 0.10 W / C º - C J ) h (t Z 0.01 0.00 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds © 2009 IXYS CORPORATION, All Rights Reserved IXYS REF:F_140N25T(9W)3-25-09

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