HiPerFETTM IXFH 52N30Q V = 300 V DSS IXFK 52N30Q Power MOSFETs I = 52 A IXFT 52N30Q D25 (cid:1) Q-Class R = 60 m DS(on) (cid:2) t 250 ns N-Channel Enhancement Mode rr Avalanche Rated, High dv/dt, Low t rr Low Gate Charge and Capacitances Preliminary data Symbol Test Conditions Maximum Ratings TO-247 AD (IXFH) V T = 25(cid:1)C to 150(cid:1)C 300 V VDSS TJ = 25(cid:1)C to 150(cid:1)C; R = 1 M(cid:2) 300 V DGR J GS V Continuous (cid:3)20 V VGS Transient (cid:3)30 V (TAB) GSM I T = 25(cid:1)C, Chip capability 52 A ID25 TC = 25(cid:1)C, pulse width limited by T 208 A IDM TC = 25(cid:1)C JM 52 A AR C TO-268 (D3) ( IXFT) E T = 25(cid:1)C 30 mJ EAR TC = 25(cid:1)C 1.5 J AS C dv/dt I (cid:4) I , di/dt (cid:4) 100 A/(cid:5)s, V (cid:4) V , 5 V/ns G (TAB) TS (cid:4) 1D5M0(cid:1)C, R = 2 (cid:2) DD DSS S J G P T = 25(cid:1)C 360 W D C T -55 ... +150 (cid:1)C TJ 150 (cid:1)C TO-264 AA (IXFK) TJM -55 ... +150 (cid:1)C stg T 1.6 mm (0.063 in) from case for 10 s 300 (cid:1)C L M Mounting torque TO-247 1.13/10 Nm/lb.in. G d D TO-264 0.9/6 Nm/lb.in. S D (TAB) Weight TO-247 6 g G = Gate TO-264 10 g S = Source TAB = Drain TO-268 4 g Features • Low gate charge Symbol Test Conditions Characteristic Values (cid:127) International standard packages (T = 25(cid:1)C, unless otherwise specified) (cid:127) Epoxy meetUL94V-0, flammability J min. typ. max. classification (cid:127) Low R HDMOSTM process V V = 0 V, I = 1 mA 300 V DS (on) DSS GS D (cid:127) Rugged polysilicon gate cell structure V V = V , I = 4 mA 2 4 V (cid:127) Avalanche energy and current rated GS(th) DS GS D (cid:127) Fast intrinsic Rectifier I V = (cid:3)20 V , V = 0 (cid:3)200 nA GSS GS DC DS I V = V T = 25(cid:1)C 50 (cid:5)A Advantages DSS VDS = 0 DVSS TJ = 125(cid:1)C 1 mA GS J (cid:127) Easy to mount R V = 10 V, I = 0.5 (cid:127)I 60 m(cid:2) DS(on) PuGSlse test, t (cid:4)D 300 (cid:5)s, Dd2u5ty cycle d(cid:6)(cid:4) 2 % (cid:127) Space savings (cid:127) High power density IXYS reserves the right to change limits, test conditions, and dimensions. 98522B (7/00) © 2000 IXYS All rights reserved 1 - 2

IXFH 52N30Q IXFK 52N30Q IXFT 52N30Q Symbol Test Conditions Characteristic Values TO-247 AD (IXFH) Outline (T = 25(cid:1)C, unless otherwise specified) J min. typ. max. g V = 10 V; I = 0.5 (cid:127)I , pulse test 22 35 S fs DS D D25 C 5300 pF iss C V = 0 V, V = 25 V, f = 1 MHz 1010 pF oss GS DS C 200 pF rss Dim. Millimeter Inches t 27 ns d(on) Min. Max. Min. Max. t V = 10 V, V = 0.5 (cid:127)V , I = 0.5 (cid:127)I 60 ns A 19.8120.32 0.780 0.800 r GS DS DSS D D25 t R = 1.5(cid:6)(cid:2) (External), 80 ns B 20.8021.46 0.819 0.845 d(off) G C 15.7516.26 0.610 0.640 t 25 ns D 3.55 3.65 0.140 0.144 f E 4.32 5.49 0.170 0.216 Q 150 nC g(on) F 5.4 6.2 0.212 0.244 Q V = 10 V, V = 0.5 (cid:127)V , I = 0.5 (cid:127)I 34 nC G 1.65 2.13 0.065 0.084 gs GS DS DSS D D25 H - 4.5 - 0.177 Q 75 nC gd J 1.0 1.4 0.040 0.055 K 10.8 11.0 0.426 0.433 R 0.35 K/W thJC L 4.7 5.3 0.185 0.209 M 0.4 0.8 0.016 0.031 R TO-247 0.25 K/W N 1.5 2.49 0.087 0.102 thCK TO-264 0.15 K/W TO-264 AA Outline Source-Drain Diode Characteristic Values (T = 25(cid:1)C, unless otherwise specified) J Symbol Test Conditions min. typ. max. I V = 0 V 52 A S GS I Repetitive; pulse width limited by T 208 A SM JM V I = I , V = 0 V, 1.5 V Dim. Millimeter Inches SD PFulseS tesGt,S t (cid:4)(cid:6)300 (cid:5)s, duty cycle d(cid:6)(cid:4) 2 % Min. Max. Min. Max. A 4.82 5.13 .190 .202 A1 2.54 2.89 .100 .114 t 250 ns A2 2.00 2.10 .079 .083 Qrr I = I -di/dt = 100 A/(cid:5)s, V = 100 V 1 (cid:5)C b 1.12 1.42 .044 .056 I RM F S R 8 A b1 2.39 2.69 .094 .106 RM b2 2.90 3.09 .114 .122 c 0.53 0.83 .021 .033 D 25.91 26.16 1.020 1.030 E 19.81 19.96 .780 .786 e 5.46 BSC .215 BSC J 0.00 0.25 .000 .010 K 0.00 0.25 .000 .010 TO-268AA (D3 PAK) Dim. Millimeter Inches L 20.32 20.83 .800 .820 Min. Max. Min. Max. L1 2.29 2.59 .090 .102 A 4.9 5.1 .193 .201 P 3.17 3.66 .125 .144 Q 6.07 6.27 .239 .247 A 2.7 2.9 .106 .114 1 Q1 8.38 8.69 .330 .342 A .02 .25 .001 .010 2 R 3.81 4.32 .150 .170 b 1.15 1.45 .045 .057 R1 1.78 2.29 .070 .090 b 1.9 2.1 .75 .83 S 6.04 6.30 .238 .248 2 C .4 .65 .016 .026 T 1.57 1.83 .062 .072 D 13.80 14.00 .543 .551 E 15.85 16.05 .624 .632 Min. Recommended Footprint E 13.3 13.6 .524 .535 1 e 5.45 BSC .215 BSC H 18.70 19.10 .736 .752 L 2.40 2.70 .094 .106 L1 1.20 1.40 .047 .055 L2 1.00 1.15 .039 .045 L3 0.25 BSC .010 BSC L4 3.80 4.10 .150 .161 © 2000 IXYS All rights reserved IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 2 - 2 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025

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