PolarHVTM HiPerFET IXFH 36N60P V = 600 V DSS IXFK 36N60P I = 36 A Power MOSFET D25 ≤≤≤≤≤ ΩΩΩΩΩ IXFT 36N60P R 190 m DS(on) ≤≤≤≤≤ N-Channel Enhancement Mode t 200 ns rr Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings TO-247 (IXFH) V T = 25°C to 150°C 600 V DSS J V T = 25°C to 150°C; R = 1 MΩ 600 V DGR J GS V Continuous ±30 V GSS G V Transient ±40 V DS D (TAB) GSM I T = 25°C 36 A D25 C I T = 25°C, pulse width limited by T 80 A TO-268 (IXFT) Case Style DM C JM I T = 25°C 36 A AR C E T = 25°C 50 mJ AR C E T = 25°C 1.5 J AS C G dv/dt I ≤ I , di/dt ≤ 100 A/µs, V ≤ V , 20 V/ns S S DM DD DSS D (TAB) T ≤ 150°C, R = 4 Ω J G P T = 25°C 650 W TO-264 AA (IXFK) D C T -55 ... +150 °C J T 150 °C JM T -55 ... +150 °C stg M Mounting torque (TO-247 & TO-264) 1.13/10 Nm/lb.in. d G Weight TO-247 6 g D (TAB) TO-268 5 g S TO-264 10 g G = Gate D = Drain T 1.6 mm (0.062 in.) from case for 10 s 300 °C S = Source Tab = Drain L T Plastic body for 10 s 260 °C SOLD Features Symbol Test Conditions Characteristic Values (T = 25°C, unless otherwise specified) Min. Typ. Max. l International standard packages J l Fast recovery diode BVDSS VGS = 0 V, ID = 250 µA 600 V l Unclamped Inductive Switching (UIS) rated V V = V , I = 4 mA 3.0 5.0 V GS(th) DS GS D l Low package inductance I V = ±30 V , V = 0 ±200 nA - easy to drive and to protect GSS GS DC DS I V = V 100 µA DSS DS DSS V = 0 V T = 125°C 1000 µA Advantages GS J R V = 10 V, I = 0.5 I 190 mΩ l Easy to mount DS(on) GS D D25 Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % l Space savings l High power density © 2006 IXYS All rights reserved DS99383E(02/06)

IXFH 36N60P IXFK 36N60P IXFT 36N60P Symbol Test Conditions Characteristic Values (T = 25°C, unless otherwise specified) TO-247 AD (IXFH) Outline J Min. Typ. Max. g V = 20 V; I = 0.5 I , pulse test 25 39 S fs DS D D25 C 5800 pF iss C V = 0 V, V = 25 V, f = 1 MHz 570 pF 1 2 3 oss GS DS C 30 pF rss t 30 ns d(on) t V = 10 V, V = 0.5 I 25 ns r GS DS D25 t R =2 Ω (External) 80 ns d(off) G t 22 ns f Dim. Millimeter Inches Min. Max. Min. Max. Q 102 nC g(on) A 4.7 5.3 .185 .209 Q V = 10 V, V = 0.5 V , I = 0.5 I 34 nC A 2.2 2.54 .087 .102 gs GS DS DSS D D25 A1 2.2 2.6 .059 .098 Q 36 nC 2 gd b 1.0 1.4 .040 .055 b 1.65 2.13 .065 .084 R 0.19 °C/W b1 2.87 3.12 .113 .123 thJC 2 R TO-247 0.21 °C/W C .4 .8 .016 .031 RthCS TO-264 0.15 °C/W DE 2105..8705 2116..4266 ..861190 ..864450 thCS e 5.20 5.72 0.205 0.225 L 19.81 20.32 .780 .800 L1 4.50 .177 Source-Drain Diode Characteristic Values (T = 25°C, unless otherwise specified) ∅P 3.55 3.65 .140 .144 J Q 5.89 6.40 0.232 0.252 Symbol Test Conditions Min. Typ. Max. R 4.32 5.49 .170 .216 S 6.15 BSC 242 BSC I V = 0 V 36 A S GS TO-264 (IXFK) Outline I Repetitive 80 A SM V I = I , V = 0 V, 1.5 V SD F S GS Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % t I = 25A, -di/dt = 100 A/µs 200 ns rr F Q V = 100V 0.8 µC RM R I 6.0 A RM TO-268 (IXFT)Outline IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405B2 6,759,692 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2

IXFH 36N60P IXFK 36N60P IXFT 36N60P Fig. 1. Output Characteristics Fig. 2. Extended Output Characteristics @ 25ºC @ 25ºC 36 90 32 VGS = 10V 80 VGS = 10V 7V 8V 28 70 24 60 7V mperes 20 6V mperes 50 A 16 A 40 I - D 12 I - D 30 6V 8 20 4 5V 10 5V 0 0 0 1 2 3 4 5 6 7 0 3 6 9 12 15 18 21 24 27 30 VD S - Volts VD S - Volts Fig. 3. Output Characteristics Fig. 4. R Normalized to 0.5 I DS(on) D25 @ 125ºC Value vs. Junction Temperature 36 3.1 32 VGS = 10V 2.8 VGS = 10V 7V 28 d 2.5 e z s 24 6V ali 2.2 e m mper 20 Nor 1.9 ID = 36A I - AD 1126 - S ( o n ) 11..36 ID = 18A D 8 5V R 1 4 0.7 0 0.4 0 2 4 6 8 10 12 14 16 -50 -25 0 25 50 75 100 125 150 VD S - Volts TJ - Degrees Centigrade Fig. 5. R Normalized to DS(on) Fig. 6. Drain Current vs. Case 0.5 ID25 Value vs. ID Temperature 3.4 40 3.0 VGS = 10V 35 d TJ = 125ºC 30 e 2.6 z mali es 25 or 2.2 per N m 20 - o n ) 1.8 - AD 15 S ( I D 1.4 R 10 TJ = 25ºC 1.0 5 0.6 0 0 10 20 30 40 50 60 70 80 90 -50 -25 0 25 50 75 100 125 150 I - Amperes T - Degrees Centigrade D C © 2006 IXYS All rights reserved

IXFH 36N60P IXFK 36N60P IXFT 36N60P Fig. 7. Input Admittance Fig. 8. Transconductance 55 70 50 45 60 TJ = -40ºC 25ºC 40 50 125ºC es 35 ns er me 40 mp 30 Sie I - AD 2205 TJ = 125ºC g - f s 30 15 25ºC 20 -40ºC 10 10 5 0 0 3.5 4 4.5 5 5.5 6 6.5 0 10 20 30 40 50 60 70 V - Volts I - Amperes G S D Fig. 9. Source Current vs. Fig. 10. Gate Charge Source-To-Drain Voltage 100 10 90 9 VDS = 300V 80 8 ID = 18A 70 7 IG = 10mA s mpere 60 Volts 6 I - AS 4500 V - G S 45 30 TJ = 125ºC 3 20 2 10 TJ = 25ºC 1 0 0 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 0 10 20 30 40 50 60 70 80 90 100 110 VS D - Volts Q G - nanoCoulombs Fig. 12. Maximum Transient Thermal Fig. 11. Capacitance Resistance 10000 1.00 Ciss s d a oFar 1000 C / W e - pic Coss º -J C 0.10 citanc 100 R( t h ) a p a C f = 1MHz Crss 10 0.01 0 5 10 15 20 25 30 35 40 0.1 1 10 100 1000 V - Volts Pulse Width - milliseconds D S IXYS reserves the right to change limits, test conditions, and dimensions.

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