HiPerFETTM V I R DSS D25 DS(on) Power MOSFETs IXFH/IXFM11N80 800 V 11 A 0.95 (cid:1) IXFH/IXFM13N80 800 V 13 A 0.80 (cid:1) (cid:2)(cid:2)(cid:2)(cid:2)(cid:2)(cid:2)(cid:2)(cid:2)(cid:2)(cid:2)(cid:2)(cid:2)(cid:2)(cid:2)(cid:2)(cid:2)(cid:2)(cid:2)(cid:2)(cid:2)(cid:2)(cid:2)(cid:2)(cid:2)(cid:2)(cid:2)(cid:2)(cid:2)(cid:2)(cid:2)(cid:2)(cid:2)(cid:2)(cid:2)(cid:2)(cid:2)(cid:2)t (cid:3)(cid:2)250 ns N-Channel Enhancement Mode rr High dv/dt, Low t , HDMOSTM Family rr Symbol Test Conditions Maximum Ratings TO-247 AD (IXFH) V T = 25(cid:1)C to 150(cid:1)C 800 V DSS J V T = 25(cid:1)C to 150(cid:1)C; R = 1 M(cid:2) 800 V DGR J GS V Continuous (cid:3)20 V VGS Transient (cid:3)30 V (TAB) GSM I T = 25(cid:1)C 11N80 11 A D25 C 13N80 13 A TO-204 AA (IXFM) I T = 25(cid:1)C, pulse width limited by T 11N80 44 A DM C JM 13N80 52 A I T = 25(cid:1)C 11N80 11 A AR C 13N80 13 A E T = 25(cid:1)C 30 mJ AR C G dv/dt I (cid:4) I , di/dt (cid:4) 100 A/(cid:5)s, V (cid:4) V , 5 V/ns D TS (cid:4) 15DM0(cid:1)C, R = 2 (cid:2) DD DSS G = Gate, D = Drain, J G S = Source, TAB = Drain P T = 25(cid:1)C 300 W D C T -55 ... +150 (cid:1)C J Features T 150 (cid:1)C • International standard packages JM T -55 ... +150 (cid:1)C (cid:127) Low R HDMOSTM process stg DS (on) (cid:127) Rugged polysilicon gate cell structure T 1.6 mm (0.062 in.) from case for 10 s 300 (cid:1)C L (cid:127) Unclamped Inductive Switching (UIS) M Mounting torque 1.13/10 Nm/lb.in. rated d (cid:127) Low package inductance Weight TO-204 = 18 g, TO-247 = 6 g - easy to drive and to protect (cid:127) Fast intrinsic Rectifier Applications (cid:127) DC-DC converters Symbol Test Conditions Characteristic Values (cid:127) Synchronous rectification (T = 25(cid:1)C, unless otherwise specified) J (cid:127) Battery chargers min. typ. max. (cid:127) Switched-mode and resonant-mode V V = 0 V, I = 3 mA 800 V power supplies VDSS VGS = V , ID = 4 mA 2.0 4.5 V (cid:127) DC choppers GS(th) DS GS D (cid:127) AC motor control I V = (cid:3)20 V , V = 0 (cid:3)100 nA (cid:127) Temperature and lighting controls GSS GS DC DS (cid:127) Low voltage relays I V = 0.8 (cid:127)V T = 25(cid:1)C 250 (cid:5)A DSS VDS = 0 V DSS TJ = 125(cid:1)C 1 mA GS J Advantages R V = 10 V, I = 0.5 (cid:127)I 11N80 0.95 (cid:2) (cid:127) Easy to mount with 1 screw (TO-247) DS(on) GS D D25 13N80 0.80 (cid:2) (isolated mounting screw hole) Pulse test, t (cid:4) 300 (cid:5)s, duty cycle d(cid:6)(cid:4) 2 % (cid:127) Space savings (cid:127) High power density IXYS reserves the right to change limits, test conditions, and dimensions. 91528F(7/97) © 2000 IXYS All rights reserved 1 - 4

IXFH 11N80 IXFH 13N80 IXFM 11N80 IXFM 13N80 Symbol Test Conditions Characteristic Values TO-247 AD (IXFH) Outline (T = 25(cid:1)C, unless otherwise specified) J min. typ. max. g V = 10 V; I = 0.5 (cid:127)I , pulse test 8 14 S fs DS D D25 C 4200 pF iss C V = 0 V, V = 25 V, f = 1 MHz 360 pF oss GS DS C 100 pF rss t 20 50 ns d(on) t V = 10 V, V = 0.5 (cid:127)V , I = 0.5 (cid:127)I 33 50 ns r GS DS DSS D D25 t R = 2(cid:6)(cid:2) (External) 63 100 ns d(off) G t 32 50 ns f Q 128 155 nC Dim. Millimeter Inches g(on) Min. Max. Min. Max. Q V = 10 V, V = 0.5 (cid:127)V , I = 0.5 (cid:127)I 30 45 nC gs GS DS DSS D D25 A 19.8120.32 0.780 0.800 Q 55 80 nC B 20.8021.46 0.819 0.845 gd C 15.7516.26 0.610 0.640 R 0.42 K/W D 3.55 3.65 0.140 0.144 thJC R 0.25 K/W E 4.32 5.49 0.170 0.216 thCK F 5.4 6.2 0.212 0.244 G 1.65 2.13 0.065 0.084 H - 4.5 - 0.177 Source-Drain Diode Characteristic Values J 1.0 1.4 0.040 0.055 (T = 25(cid:1)C, unless otherwise specified) K 10.8 11.0 0.426 0.433 Symbol Test Conditions J min. typ. max. L 4.7 5.3 0.185 0.209 M 0.4 0.8 0.016 0.031 I V = 0 V 11N80 11 A N 1.5 2.49 0.087 0.102 S GS 13N80 13 A I Repetitive; 11N80 44 A TO-204 AA (IXFM) Outline SM pulse width limited by T 13N80 52 A JM V I = I , V = 0 V, 1.5 V SD PFulseS tesGSt, t (cid:4)(cid:6)300 (cid:5)s, duty cycle d(cid:6)(cid:4) 2 % t T = 25(cid:1)C 250 ns rr I = I TJ = 125(cid:1)C 400 ns -Fdi/dtS = 100 A/(cid:5)s, J Q V = 100 V 1 (cid:5)C RM R I 8.5 A RM Dim. Millimeter Inches Min. Max. Min. Max. A 38.61 39.12 1.520 1.540 B 19.43 19.94 - 0.785 C 6.40 9.14 0.252 0.360 D 0.97 1.09 0.038 0.043 E 1.53 2.92 0.060 0.115 F 30.15 BSC 1.187 BSC G 10.67 11.17 0.420 0.440 H 5.21 5.71 0.205 0.225 J 16.64 17.14 0.655 0.675 K 11.18 12.19 0.440 0.480 Q 3.84 4.19 0.151 0.165 R 25.16 25.90 0.991 1.020 © 2000 IXYS All rights reserved IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 2 - 4 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025

IXFH 11N80 IXFH 13N80 IXFM 11N80 IXFM 13N80 Fig. 1 Output Characteristics Fig. 2 Input Admittance 18 18 16 TJ = 25°C 16 TJ = 25°C V = 10V DS 14 14 V = 10V GS s 12 s 12 e 8V e er 10 er 10 p p m m A 8 A 8 I - D 6 7V I - D 6 4 4 2 2 0 0 0 2 4 6 8 10 12 0 1 2 3 4 5 6 7 8 9 10 V - Volts V - Volts DS GS Fig. 3 R vs. Drain Current Fig. 4 Temperature Dependence DS(on) of Drain to Source Resistance 1.40 2.50 T = 25°C 1.35 J 2.25 1.30 d 2.00 s 1.25 ze R - OhmDS(on) 1111....01125050 VGS = 10VVGS = 15V - NormaliS(on) 111...257505 ID = 6.5A RD 1.00 1.00 0.75 0.95 0.90 0.50 0 2 4 6 8 10 12 14 16 18 20 22 24 26 -50 -25 0 25 50 75 100 125 150 I - Amperes T - Degrees C D J Fig. 5 Drain Current vs. Fig. 6 Temperature Dependence of Case Temperature Breakdown and Threshold Voltage 18 1.2 16 VGS(th) BVDSS 1.1 14 13N80 ed z 1.0 s 12 ali e m mper 10 11N80 Nor 0.9 I - AD 68 V/V - G(th) 00..78 4 B 0.6 2 0 0.5 -50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150 T - Degrees C T - Degrees C C J © 2000 IXYS All rights reserved 3 - 4

IXFH 11N80 IXFH 13N80 IXFM 11N80 IXFM 13N80 Fig.7 Gate Charge Characteristic Curve Fig.8 Forward Bias Safe Operating Area 10 10µs V = 400V Limited by R DS DS(on) 8 I = 13A D 100µs IG = 10mA s 10 s e Volt 6 per 1ms - E Am VG 4 - D 1 10ms I 100ms 2 0 0.1 0 25 50 75 100 125 150 1 10 100 1000 Gate Charge - nCoulombs V - Volts DS Fig.9 Capacitance Curves Fig.10 Source Current vs. Source to Drain Voltage 4500 18 C 4000 iss 16 3500 14 F ance - p 23500000 fV =DS 1 = M 2H5Vz mperes 1102 apacit 12500000 I - AD 68 C T = 125°C T = 25°C 1000 4 J J C oss 500 2 C rss 0 0 0 5 10 15 20 25 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 V - Volts V - Volts CE SD Fig.11 Transient Thermal Impedance 1 W K/ e - 0.1 D=0.5 s n D=0.2 o p s D=0.1 e R D=0.05 mal 0.01 D=0.02 er D=0.01 h T Single Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds © 2000 IXYS All rights reserved 4 - 4

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