High Voltage, High Gain IXBK55N300 V = 3000V CES BiMOSFETTM IXBX55N300 I = 55A C110 V ≤≤≤≤≤ 3.2V CE(sat) Monolithic Bipolar MOS Transistor TO-264 (IXBK) Symbol Test Conditions Maximum Ratings G C V T = 25°C to 150°C 3000 V CES J E V T = 25°C to 150°C, R = 1MΩ 3000 V Tab CGR J GE V Continuous ±25 V PLUS247 (IXBX) GES V Transient ±35 V GEM I T = 25°C ( Chip Capability ) 130 A C25 C I T = 25°C ( Lead RMS Limit ) 120 A LRMS C I T = 110°C 55 A C110 C G I T = 25°C, 1ms 600 A G C CM C E Tab SSOA V = 15V, T = 125°C, R = 2Ω I = 110 A GE VJ G CM (RBSOA) Clamped Inductive Load @0.8 • V CES G = Gate E = Emitter T V = 15V, T = 125°C, C = Collector Tab = Collector SC GE J (SCSOA) R = 10Ω, V = 1250V, Non-Repetitive 10 μs G CE P T = 25°C 625 W C C T -55 ... +150 °C Features J T 150 °C (cid:122) High Blocking Voltage JM T -55 ... +150 °C (cid:122) International Standard Packages stg (cid:122) Low Conduction Losses T Maximum Lead Temperature for Soldering 300 °C L (cid:122) High Current Handling Capability T 1.6 mm (0.062 in.) from Case for 10 260 °C SOLD (cid:122) MOS Gate Turn-On M Mounting Torque (TO-264 ) 1.13/10 Nm/lb.in. - Drive Simplicity d F Mounting Force (PLUS247 ) 20..120/4.5..27 N/lb. C Weight TO-264 10 g Advantages PLUS247 6 g (cid:122) Easy to Mount (cid:122) Space Savings Symbol Test Conditions Characteristic Values (cid:122) High Power Density (T = 25°C, Unless Otherwise Specified) Min. Typ. Max. J BV I = 1mA, V = 0V 3000 V CES C GE Applications V I = 4mA, V = V 3.0 5.0 V GE(th) C CE GE I V = V , V = 0V 50 μA (cid:122) Uninterruptible Power Supplies (UPS) CES CE CES GE (cid:122) Switch-Mode and Resonant-Mode T = 125°C 3 mA J Power Supplies I V = 0V, V = ± 25V ±200 nA (cid:122) Capacitor Discharge Circuits GES CE GE (cid:122) Laser Generators V I = 55A, V = 15V, Note 1 2.7 3.2 V CE(sat) C GE T = 125°C 3.3 V J © 2011 IXYS CORPORATION, All Rights Reserved DS100158A(11/11)

IXBK55N300 IXBX55N300 Symbol Test Conditions Characteristic Values TO-264 Outline (T = 25°C Unless Otherwise Specified) Min. Typ. Max. J g I = 55A, V = 10V, Note 1 32 50 S fS C CE C 7300 pF ies C V = 25V, V = 0V, f = 1MHz 275 pF oes CE GE C 83 pF res Q 335 nC g Q I = 55A, V = 15V, V = 1000V 47 nC ge C GE CE Q 130 nC gc t 54 ns d(on) Resistive Switching Times, T = 25°C t J 307 ns r I = 110A, V = 15V td(off) C G E 230 ns 1 - GATE V = 1250V, R = 2Ω t C E G 268 ns 2,4 - COLLECTOR f 3 - EMITTER t 52 ns d(on) Resistive Switching Times, T = 125°C t J 585 ns r I = 110A, V = 15V t C G E 215 ns d(off) V = 1250V, R = 2Ω t C E G 260 ns f R 0.20 °C/W thJC R 0.15 °C/W thCS PLUS 247TM Outline Reverse Diode Symbol Test Conditions Characteristic Values (T = 25°C Unless Otherwise Specified) Min. Typ. Max J V I = 55A, V = 0V, Note 1 2.5 V F F GE t I = 28A, V = 0V, -di /dt = 1 0 0 A / μ s 1.9 μs rr F GE F I V = 100V, V = 0V 54 A RM R GE 1 - GATE 2 - COLLECTOR 3 - EMITTER Dim. Millimeter Inches Min. Max. Min. Max. Note 1: Pulse Test, t ≤ 300μs, Duty Cycle, d ≤ 2%. A 4.83 5.21 .190 .205 A 2.29 2.54 .090 .100 1 Additional provisions for lead-to-lead isolation are required at V >1200V. A 1.91 2.16 .075 .085 CE 2 b 1.14 1.40 .045 .055 b 1.91 2.13 .075 .084 1 b 2.92 3.12 .115 .123 2 C 0.61 0.80 .024 .031 D 20.80 21.34 .819 .840 E 15.75 16.13 .620 .635 e 5.45 BSC .215 BSC L 19.81 20.32 .780 .800 L1 3.81 4.32 .150 .170 Q 5.59 6.20 .220 0.244 R 4.32 4.83 .170 .190 IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B27,071,537

IXBK55N300 IXBX55N300 Fig. 1. Output Characteristics @ TJ = 25ºC Fig. 2. Extended Output Characteristics @ TJ = 25ºC 120 300 VGE = 25V V G E = 2250VV 20V 100 250 15V 15V 80 200 mperes 60 10V mperes 150 10V A A I - C - C 40 I 100 20 50 5V 5V 0 0 0 0.5 1 1.5 2 2.5 3 3.5 4 0 1 2 3 4 5 6 7 8 VCE - Volts VCE - Volts Fig. 4. Dependence of V on CE(sat) Fig. 3. Output Characteristics @ TJ = 125ºC Junction Temperature 120 1.8 VGE = 25V 20V VGE = 15V 100 15V 1.6 80 ed 1.4 I C = 110A z es ali er m I - AmpC 4600 10V - NorCE(sat)11..02 I C = 55A V I C = 27.5A 20 0.8 5V 0 0.6 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 -50 -25 0 25 50 75 100 125 150 VCE - Volts TJ - Degrees Centigrade Fig. 5. Collector-to-Emitter Voltage Fig. 6. Input Admittance vs. Gate-to-Emitter Voltage 5.5 180 TJ = 25ºC 160 5.0 140 4.5 120 s V - VoltsCE 34..50 I C = 110A - IAmpereC10800 TJ = 125ºC 60 25ºC 3.0 55A - 40ºC 40 2.5 20 27.5A 2.0 0 5 6 7 8 9 10 11 12 13 14 15 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 VGE - Volts VGE - Volts © 2011 IXYS CORPORATION, All Rights Reserved

IXBK55N300 IXBX55N300 Fig. 7. Transconductance Fig. 8. Forward Voltage Drop of Intrinsic Diode 100 180 90 TJ = - 40ºC 160 80 140 70 25ºC 120 s g - Siemen f s 456000 125ºC I - AmperesF18000 TJ = 25ºC TJ = 125ºC 60 30 40 20 10 20 0 0 0 20 40 60 80 100 120 140 160 180 200 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0 IC - Amperes VF - Volts Fig. 9. Gate Charge Fig. 10. Capacitance 16 100,000 14 VCE = 1000V f = 1 MHz I C = 55A 12 I G = 10mA ds10,000 a Volts 10 PicoFar Cies - GE 8 ce - 1,000 V 6 citan Coes a p 4 Ca 100 2 Cres 0 10 0 50 100 150 200 250 300 350 0 5 10 15 20 25 30 35 40 QG - NanoCoulombs VCE - Volts Fig. 11. Reverse-Bias Safe Operating Area Fig. 12. Maximum Transient Thermal Impedance 120 1 100 80 0.1 es W per C / I - AmC 4600 Z - º(th)JC 0.01 TJ = 125ºC 20 RG = 2Ω dv / dt < 10V / ns 0 0.001 200 600 1000 1400 1800 2200 2600 3000 0.0001 0.001 0.01 0.1 1 10 VCE - Volts Pulse Width - Seconds IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

IXBK55N300 IXBX55N300 Fig. 13. Resistive Turn-on Rise Time vs. Fig. 14. Resistive Turn-on Rise Time vs. Junction Temperature Collector Current 700 700 RG = 2Ω , VGE = 15V 600 600 VCE = 1250V TJ = 125ºC Nanoseconds450000 I C = 220A Nanoseconds450000 RVCGE = = 2 Ω12 ,5 0VVGE = 15V t - r I C = 110A t - r TJ = 25ºC 300 300 200 200 25 35 45 55 65 75 85 95 105 115 125 40 60 80 100 120 140 160 180 200 220 TJ - Degrees Centigrade IC - Amperes Fig. 15. Resistive Turn-on Switching Times vs. Fig. 16. Resistive Turn-off Switching Times vs. Gate Resistance Junction Temperature 320 300 720 120 t - Nanosecondsr 666672468000000 IV TtC JCr =E= 2=1 2 2 10 5 2A º5 C 0 , V V G tE d (=o n1) 5-V - - - 789110000100 d(on) - Nanosecondt t - Nanosecondsf 222233678901000000 I C = 110A I C = 22 0RVtA CfG E = = 2 1Ω 2 , 5 0V V G E = t d1 (5ofVf) - - - - 122222802468000000 d(off) - Nanosecondt 600 I C = 110A 60 s 250 160 s 580 50 240 140 560 40 230 120 2 3 4 5 6 7 8 9 10 11 12 13 14 15 25 35 45 55 65 75 85 95 105 115 125 RG - Ohms TJ - Degrees Centigrade Fig. 17. Resistive Turn-off Switching Times vs. Fig. 18. Resistive Turn-off Switching Times vs. Collector Current Gate Resistance 380 320 360 680 360 t f td(off) - - - - 300 340 t f td(off) - - - - 600 340 RG = 2Ω, VGE = 15V 280 TJ = 125ºC, VGE = 15V econds330200 VCE = 1250V 224600 d(off) - Nt econds330200 VCE = 1250V I C = 110A 454200 d(off) - Nt Nanos280 220 anose Nanos280 360 anose t - f 260 200 conds t - f 260 I C = 220A 280 conds 240 180 240 200 220 160 TJ = 125ºC, 25ºC 200 140 220 120 40 60 80 100 120 140 160 180 200 220 2 3 4 5 6 7 8 9 10 11 12 13 14 15 IC - Amperes RG - Ohms © 2011 IXYS CORPORATION, All Rights Reserved

IIXXBBKK5555NN330000 IIXXBBXX5555NN330000 Fig. 19. Forward-Bias Safe Operating Area Fig. 20. Forward-Bias Safe Operating Area @ T = 25ºC @ T = 75ºC C C 1000 1000 VCE(sat) Limit VCE(sat) Limit 100 100 25µs 100µs 25µs s10 s10 100µs e e er er p p m m A 1ms A - D 1 - D 1 1ms I I 10ms 10ms 0.1 TJ = 150ºC 100ms 0.1 TJ = 150ºC TC = 25ºC DC TC = 75ºC 100ms Single Pulse Single Pulse DC 0.01 0.01 1 10 100 1,000 10,000 1 10 100 1,000 10,000 VDS - Volts VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: B_55N300 (8T) 11-03-11-C

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