Breakover Diodes Applications (cid:1)Transient voltage protection (cid:1)High-voltage switches (cid:1)Crowbar (cid:1)Lasers (cid:1)Pulse generators i I H I BO V V V H BO Application Note H - 6 Remark: For special selection of more than 2 pieces IXBOD 1-... for every break down voltage of V > 2000 V please contact us. BO © 2000 IXYS All rights reserved H - 1

IXBOD 1 -06...10 Single Breakover Diode V = 600-1000V BO I = 0.9 A AVM V Standard BO V Types A K 600 –50 IXBOD 1 -06 700 –50 IXBOD 1 -07 800 –50 IXBOD 1 -08 900 –50 IXBOD 1 -09 1000 –50 IXBOD 1 -10 Symbol Conditions Ratings I T =125°C; V = 0,8x V 20 (cid:181)A D VJ BO V V (T ) = V [1 + K (T - 25°C)] BO BO VJ BO, 25°C T VJ I f = 50 HZ; T = 50°C 1.4 A RMS amb connection pins soldered to printed circuit (conductor 0,035x2mm) I 0.9 A AVM I t = 0.1 ms; T = 50°C non repetitive 200 A SM p amb I²t t = 0.1 ms; T = 50°C 2 A2s p amb T -40...+125 °C amb T -40...+125 °C stg T 125 °C VJm Dimensions in mm (1 mm = 0.0394") K Temperatur coefficient of V 2·10-3 K-1 T BO K coefficient for energy per pulse E (material constant) 700 K/Ws P P R - natural convection 60 K/W thJA - with air speed 2 m/s 45 K/W Weight 1 g Symbol Conditions Characteristic Values I T = 25°C 15 mA BO VJ I T = 25°C 30 mA H VJ V T = 25°C 4 - 8 V H VJ (dv/dt) T = 50°C; V = 0.67·(V + 100V) > 1000 V/µs C VJ D BO K A (di/dt) T = 125°C; V = V ; I = 80A; f = 50 Hz 200 A/µs C VJ D BO T t T = 125°C V = 0.67·V ; V = 0V 150 µs q(typ) VJ D BO R dV/dt = 200V/µs; I = 80A; di/dt = -10A/µs (lin.) T V T =125°C; I = 5A 1.7 V T VJ T V For power-loss calculations only 1.1 V (TO) r T = 125°C 0.12 Ω T VJ 0 IXYS reserve at these the right to change limits, test conditions and dimensions; Data according to IEC 60747 3 0 H - 2 © 2000 IXYS All rights reserved

IXBOD 1 -06...10 Fig. 1 Energy per pulse for trapezoidal current wafeforms (see waveform definition). Fig. 2 Energy per pulse for exponentially decaying current pulse (see waveforms definition). V = 0 m/s a V = 2 m/s a [V] [K/W] Z V thJA T T = 125(cid:176)C VJ T = 25(cid:176)C VJ iT [A] t [s] Fig. 3 On-state voltage Fig. 4 Transient thermal resistance. © 2000 IXYS All rights reserved H - 3

IXBOD 1 -12R...42R(D) Breakover Diode Modules Version: R Version: RD V Standard BOD - V Standard BOD - V Standard BOD - BO BO BO V Types Elements V Types Elements V Types Elements 1200 ±50 IXBOD 1 -12R(D) 2 2000 ±50 IXBOD 1 -20R(D) 3 3400 ±100 IXBOD 1 -34R 4 1300 ±50 IXBOD 1 -13R(D) 2 2100 ±50 IXBOD 1 -21R(D) 3 3600 ±100 IXBOD 1 -36R 4 1400 ±50 IXBOD 1 -14R(D) 2 2200 ±50 IXBOD 1 -22R(D) 3 3800 ±100 IXBOD 1 -38R 4 1500 ±50 IXBOD 1 -15R(D) 2 2300 ±50 IXBOD 1 -23R(D) 3 4000 ±100 IXBOD 1 -40R 4 1600 ±50 IXBOD 1 -16R(D) 2 2400 ±50 IXBOD 1 -24R(D) 3 4200 ±100 IXBOD 1 -42R 4 1700 ±50 IXBOD 1 -17R(D) 2 2500 ±50 IXBOD 1 -25R(D) 3 1800 ±50 IXBOD 1 -18R(D) 2 2600 ±100 IXBOD 1 -26R(D) 3 1900 ±50 IXBOD 1 -19R(D) 2 2800 ±100 IXBOD 1 -28R(D) 3 3000 ±100 IXBOD 1 -30R(D) 3 3200 ±100 IXBOD 1 -32R(D) 3 2-3 BODs Symbol Test Conditions 2 BODs 3 BODs 4 BODs D-Version I T = 125°C;V = 0,8x V 100 100 100 100 (cid:181)A D VJ BO V V (T ) = V [1 + K (T - 25°C)] BO BO VJ BO, 25°C T VJ I f = 50 HZ; T = 50°C 2.0 1.4 1.1 0.3 A RMS amb connection pins soldered to printed circuit (conductor 0,035x2mm) I 1.25 0.9 0.7 0.2 A AVM I t = 0.1 ms; T = 50°C non repetitive 200 200 200 50 A SM p amb I²t t = 0.1 ms; T = 50°C 2 2 2 0.125 A2s p amb V T =125°C; I = 5A 3.4 5.1 6.8 27 V T VJ T V For power-loss calculations only 2.2 3.3 4.4 17.5 V (TO) r T =125°C 0.24 0.36 0.48 3 Ω T VJ T -40...+125 -40...+125 -40...+125 -40...+125 °C amb T -40...+125 -40...+125 -40...+125 -40...+125 °C stg T 125 125 125 125 °C VJm K Temperatur coefficient of V 2·10-3 2·10-3 2·10-3 2·10-3 K-1 T BO K coefficient for energy per pulse E (material constant) 700 700 700 700 K/Ws P P R - natural convection 20 20 20 20 K/W thJA - with air speed 2 m/s 16 16 16 16 K/W Weight typical 14 14 14 14 g Symbol Test Conditions Characteristic Values both Versions R & RD 2 BODs 3 BODs 4 BODs I T = 25°C 15 15 15 mA BO VJ I T = 25°C 30 30 30 mA H VJ V T = 25°C 4 - 8 4 - 8 4 - 8 V H VJ (dv/dt) T = 50°C; V = 0.67·(V + 100V) C VJ D BO - V bis 1500V > 1000 - - V/µs BO - V 1600 - 2000V > 1500 - - V/µs BO - V 2100 - 2500V - > 2000 - V/µs BO - V 2600 - 3000V - > 2500 - V/µs BO - V 3200 - 3400V - - > 3000 V/µs BO - V 3600 - 4200V - - > 3500 V/µs BO (di/dt) T = 125°C; V = V ; I = 80A; f = 50 Hz 200 200 200 A/µs C VJ D BO T t T = 125°C V = 0.67·V ; V = 0V 150 150 150 µs q(typ) VJ D BO R dv/dt = 200V/µs; I = 80A; di/dt = -10A/µs (lin.) T 2 IXYS reserve at these the right to change limits, test conditions and dimensions; Data according to IEC 60747 3 0 H - 4 © 2000 IXYS All rights reserved

IXBOD 1 -12R...42R(D) A K K A Dimensions in mm (1 mm = 0.0394") Fig. 5 Energy per pulse for single BOD element Fig. 6 Energy per pulse for single BOD element for trapezoidal wave current. E must be multiplied for exponentially decaying current pulse. E must P P by number of elements for total energy. be multiplied by number of elements for total energy. n = number of BOD-Elements in series [V] [K/W] VT ZthJA Va = 0 m/s V = 2 m/s a iT [A] t [s] Fig. 7 On-state voltage at T = 125(cid:176)C. Fig. 8 Transient thermal resistance. VJ © 2000 IXYS All rights reserved H - 5

Application Protection of thyristors against overvoltages in forward i direction. Thyristor V (T ) = V [1+KT(T - 25°C)] BO VJ BO, 25°C VJ BOD V D Calculation example a. The maximum junction temperature shall be b. If following these steady-state conditions an calculated for a module IXBOD 1 -30R at an overload for 1 minute occurs with I = 60 A and a TM ambient temperature T = 60 (cid:176)C, an exponentially pulse-width tp = 4 µs at the same operating a decaying current I = 40A, a pulsewidth tp = 2 µs, frequency f = 50 Hz, then the resulting maximum TM an operating frequency f = 50 Hz and natural junction temperature is calculating as follows: convection. From the diagram Fig. 6 the energy per pulse is obtained: T = T + (E -E ) (cid:149) n (cid:149) f (cid:149)Z (t) + Kp (cid:149) (E -E ) VJmax2 VJmax1 p2 p1 thJA p2 p1 E = 6 x 10-3 Ws p1 For a module IXBOD1-30R the number of single The diagrams Fig. 11 and Fig. 8 show IXBOD elements is: n = 3 E = 14x10-3 Ws p2 Z (t = 1min) = 12K/W thJA At natural air cooling the thermal resistance junction to ambient amounts to (Fig.8): From what follows: R = 20K/W T = 82.2 + 14.4 + 5,6 = 102.2 (cid:176)C thJA VJmax2 and the unknown temperature can be calculated as: which is allowed because the maximum admissible junction temperature T = 125 (cid:176)C. VJM T = T + n (cid:149) f (cid:149) E (cid:149) R + K (cid:149) E VJmax1 a p thJA p p T = 60 + 18 + 4.2 = 82.2(cid:176)C VJmax1 H - 6 © 2000 IXYS All rights reserved

Example of a circuit A simple emergency triggering circuit. R R T : Thyristor 1 3 R : Current limiting resistance (0 - 200 Ω) 1 D : Series-diode (fast recovery diode) 1 D 1 D : Protection diode 3 T D : Zener diode, typical V : 3-6 V IXBOD 4 Z z R , C : Protection against parasitic triggering; 2 2 recommended values: D D R2 : 100 - 1000 Ω R C4 3 C3 C : 22 - 47 nF 2 2 2 R , C : Snubber network of the thyristor 3 3 Notice 1. A IXBOD element has a maximum reverse 40 blocking voltage of 10V. A I 20 R 2. For higher reverse voltages a fast, soft recovery diode must be connected in series (Fig. 9). 10 This diode must fulfill the conditions of Fig. 10. 8 i 6 4 I R 2 t t B 1 Fast recovery IXBOD single 0,1 (cid:181)s 1 2 3 5 7 10 diode or t IXBOD module B Fig. 10 Maximum peak value of the Fig. 9 IXBOD protection by a fast recovery reverse current admissible for a given diode. pulse-width t , which is required for the B suitable fast recovery series-diode. © 2000 IXYS All rights reserved H - 7

H - 8 © 2000 IXYS All rights reserved