Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor’s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclature that utilizes an underscore (_), the underscore (_) in the Fairchild part numbers will be changed to a dash (-). This document may contain device numbers with an underscore (_). Please check the ON Semiconductor website to verify the updated device numbers. The most current and up-to-date ordering information can be found at www.onsemi.com. Please email any questions regarding the system integration to Fairchild_questions@onsemi.com. ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

I S L 9 November 2014 R 4 6 0 P ISL9R460PF2 F 2 4 A, 600 V, STEALTHTM Diode — S Features Description T •Stealth Recovery trr = 17 ns (@ IF = 4 A) The ISL9R460PF2 is a STEALTH™ diode optimized for low loss E A performance in high frequency hard switched applications. The •Max Forward Voltage, V = 2.4 V (@ T = 25°C) F C STEALTH™ family exhibits low reverse recovery current (I ) and L rr •600 V Reverse Voltage and High Reliability exceptionally soft recovery under typical operating conditions. This T H device is intended for use as a free wheeling or boost diode in •Avalanche Energy Rated ™ power supplies and other power switching applications. The low I rr •RoHS Compliant and short ta phase reduce loss in switching transistors. The soft D recovery minimizes ringing, expanding the range of conditions i Applications under which the diode may be operated without the use of o additional snubber circuitry. Consider using the STEALTH™ diode d (cid:127) SMPS with an SMPS IGBT to provide the most efficient and highest power e (cid:127) Hard Switched PFC Boost Diode density design at lower cost. (cid:127) UPS Free Wheeling Diode (cid:127) Motor Drive FWD (cid:127) SMPS FWD (cid:127) Snubber Diode Package Symbol TO-220F-2L K A CATHODE ANODE Device Maximum Ratings TC= 25°C unless otherwise noted Symbol Parameter Ratings Unit V Peak Repetitive Reverse Voltage 600 V RRM V Working Peak Reverse Voltage 600 V RWM V DC Blocking Voltage 600 V R I Average Rectified Forward Current (T = 108°C) 4 A F(AV) C I Repetitive Peak Surge Current (20kHz Square Wave) 8 A FRM I Nonrepetitive Peak Surge Current (Halfwave 1 Phase 60Hz) 50 A FSM P Power Dissipation 22 W D EAVL Avalanche Energy (0.5 A, 80 mH) 10 mJ TJ, TSTG Operating and Storage Temperature Range -55 to 175 °C TL Maximum Temperature for Soldering 300 °C TPKG Leads at 0.063in (1.6mm) from Case for 10s 260 °C Package Body for 10s, See Techbrief TB334 CAUTION: Stresses above those listed in “Device Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. ©2003 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com ISL9R460PF2 Rev. C2

I S Package Marking and Ordering Information L 9 Part Number Top Mark Package Packing Method Reel Size Tape Width Quantity R ISL9R460PF2 ISL9R460PF2 TO-220F-2L Tube N/A N/A 50 4 6 0 Electrical Characteristics TC = 25°C unless otherwise noted P F Symbol Parameter Test Conditions Min Typ Max Unit 2 Off State Characteristics — IR Instantaneous Reverse Current VR = 600 V TC = 25°C - - 100 µA S T = 125°C - - 1.0 mA T C E On State Characteristics A L VF Instantaneous Forward Voltage IF = 4 A TC = 25°C - 2.0 2.4 V T T = 125°C - 1.6 2.0 V H C ™ Dynamic Characteristics D CJ Junction Capacitance VR = 10 V, IF = 0 A - 19 - pF i o d Switching Characteristics e trr Reverse Recovery Time IF = 1 A, diF/dt = 100 A/µs, VR = 30 V - 17 20 ns IF = 4 A, dIF/dt = 100 A/µs, VR = 30 V - 19 22 ns trr Reverse Recovery Time IF = 4 A, - 17 - ns I Reverse Recovery Current diF/dt = 200 A/µs, - 2.6 - A rr Q Reverse Recovered Charge VR = 390 V, TC = 25°C - 22 - nC rr trr Reverse Recovery Time IF = 4 A, - 77 - ns S Softness Factor (tb/ta) diF/dt = 200 A/µs, - 4.2 - I Reverse Recovery Current VR = 390 V, - 2.8 - A rr T = 125°C C Q Reverse Recovered Charge - 100 - nC rr trr Reverse Recovery Time IF = 4 A, - 54 - ns S Softness Factor (tb/ta) diF/dt = 400 A/µs, - 3.5 - I Reverse Recovery Current VR = 390 V, - 4.3 - A rr T = 125°C C Q Reverse Recovered Charge 110 - nC rr dI /dt Maximum di/dt during t - 500 - A/µs M b Thermal Characteristics RθJC Thermal Resistance Junction to Case - - 5.7 °C/W RθJA Thermal Resistance Junction to Ambient TO-220F - - 70 °C/W ©2003 Fairchild Semiconductor Corporation 2 www.fairchildsemi.com ISL9R460PF2 Rev. C2

I S Typical Performance Curves T = 25°C unless otherwise noted C L 9 8 600 R 4 7 6 A) 6 150oC 25oC A) 100 150oC 0P WARD CURRENT ( 345 100oC µERSE CURRENT ( 10 11702505oooCCC — STF2 OR EV E I, FF 2 I, RR 1 AL 1 25oC T H 0 0.1 ™ 0 0.5 1 1.5 2 2.5 3 100 200 300 400 500 600 VF, FORWARD VOLTAGE (V) VR, REVERSE VOLTAGE (V) D Figure 1. Forward Current vs Forward Voltage Figure 2. Reverse Current vs Reverse Voltage i o d 90 120 e VR = 390V, TJ = 125oC VR = 390V, TJ = 125oC 80 tb AT diF/dt = 200A/µs, 500A/µs, 800A/µs 100 70 s) s) tb AT IF = 8A, 4A, 2A n n S ( 60 S ( 80 E E M M TI 50 TI RY RY 60 E 40 E V V O O EC 30 EC 40 R R t, 20 t, ta AT IF = 8A, 4A, 2A 20 10 ta AT dFi/dt = 200A/µs, 500A/µs, 800A/µs 0 0 1 2 3 4 5 6 7 8 100 200 300 400 500 600 700 800 900 1000 IF, FORWARD CURRENT (A) diF/dt, CURRENT RATE OF CHANGE (A/µs) Figure 3. ta and tb Curves vs Forward Current Figure 4. ta and tb Curves vs diF/dt 8 8 A) VR = 390V, TJ = 125oC A) VR = 390V, TJ = 125oC ENT ( 7 diF/dt = 800A/µs ENT ( 7 IF = 8A R R UR UR 6 ERY C 6 ERY C 5 IF = 4A IF = 2A V V O 5 O C C RE diF/dt = 500A/µs RE 4 E E S 4 S ER ER 3 V V E E R R X 3 X 2 A A M M I, rr 2 diF/dt = 200A/µs I, rr 1 1 2 3 4 5 6 7 8 100 200 300 400 500 600 700 800 900 1000 IF, FORWARD CURRENT (A) diF/dt, CURRENT RATE OF CHANGE (A/µs) Figure 5. Maximum Reverse Recovery Current vs Figure 6. Maximum Reverse Recovery Current vs Forward Current diF/dt ©2003 Fairchild Semiconductor Corporation 3 www.fairchildsemi.com ISL9R460PF2 Rev. C2

I Typical Performance Curves S T = 25°C unless otherwise noted C L 9 6 180 R SOFTNESS FACTOR 45 IF = 4A IF =V 8RA = 390V, TJ = 125oC ERY CHARGE (nC) 114600 VR = 390V, TJ = 125oC IIFF == 84AA —460PF2 RY OV 120 OVE 3 REC S EC SE 100 T S, REVERSE R 12 IF = 2A Q, REVERRR 6800 IF = 2A EALTH 100 200 300 400 500 600 700 800 900 1000 100 200 300 400 500 600 700 800 900 1000 ™ diF/dt, CURRENT RATE OF CHANGE (A/µs) diF/dt, CURRENT RATE OF CHANGE (A/µs) D Figure 7. Reverse Recovery Softness Figure 8. Reverse Recovery Charge i o vs diF/dt vs diF/dt d e 1800 5 E (pF) 11640000 RRENT (A) 4 C U N 1200 C PACITA 1000 WARD 3 A R ON C 800 E FO 2 C, JUNCTIJ 460000 , AVERAGAV) 1 200 IF( 0 0 0.03 0.1 1.0 10 100 100 110 120 130 140 150 VR, REVERSE VOLTAGE (V) TC, CASE TEMPERATURE (OC) Figure 9. Junction Capacitance vs Reverse Voltage Figure 10. DC Current Derating Curve 2 DUTY CYCLE - DESCENDING ORDER 1 0.5 0.2 0.1 0.05 E DC 0.02 ZEAN 0.01 ORMALIL IMPED 0.1 PDM NA Z, θJCTHERM t1t2 NOTES: DUTY FACTOR: D = t1/t2 SINGLE PULSE PEAK TJ = PDM x ZθJC x RθJC + TC 0.01 10-5 10-4 10-3 10-2 10-1 100 101 t, RECTANGULAR PULSE DURATION (s) Figure 11. Normalized Maximum Transient Thermal Impedance ©2003 Fairchild Semiconductor Corporation 4 www.fairchildsemi.com ISL9R460PF2 Rev. C2

I Test Circuit and Waveforms S L 9 R 4 6 0 P VGE AMPLITUDE AND F RG CONTROL diF/dt L 2 t1 AND t2 CONTROL IF RG DUT CUSERNRSEENT + 0 IF ddiFt ta trr tb — ST VGE t1 MOSFET -VDD I0R.2M5 IRM EA L t2 T H ™ D Figure 12. Itrr Test Circuit Figure 13. trr Waveforms and Definitions io d e I = 0.5A L = 80mH R < 0.1Ω VDD = 200V EAVL = 1/2LI2 [VR(AVL)/(VR(AVL) - VDD)] Q1 = IGBT (BVCES > DUT VR(AVL)) L R VAVL CURRENT + SENSE VDD IL IL Q1 I V VDD DUT - t0 t1 t2 t Figure 14. Avalanche Energy Test Circuit Figure 15. Avalanche Current and Voltage Waveforms ©2003 Fairchild Semiconductor Corporation 5 www.fairchildsemi.com ISL9R460PF2 Rev. C2

I S L Mechanical Dimensions 9 R 4 6 0 P F 2 — S T E A L T H ™ D i o d e Figure 16. TO-220F 2L - 2LD; TO220; MOLDED; FULL PACK Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specif- ically the warranty therein, which covers Fairchild products. Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings: http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TF220-002. ©2003 Fairchild Semiconductor Corporation 6 www.fairchildsemi.com ISL9R460PF2 Rev. C2

I S L 9 R 4 TRADEMARKS 6 The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not 0 P intended to be an exhaustive list of all such trademarks. F AccuPower™ F-PFS™ 2 Awinda® FRFET® ® ®* — ABiXtS-CiCA™P®* GGlroebeanlB Priodwgeer™ ResourceSM PPoowweerrTXrSe™nch® TTiinnyyBBuocoks®t® S BCuoirledP itL NUoSw™™ GGrreeeenn FFPPSS™™ e-Series™ PQrFoEgTra®mmable Active Droop™ TTiinnyyCLoaglcic™® TE CorePOWER™ Gmax™ QS™ A TINYOPTO™ CROSSVOLT™ GTO™ Quiet Series™ TinyPower™ L CTL™ IntelliMAX™ RapidConfigure™ T TinyPWM™ Current Transfer Logic™ ISOPLANAR™ ™ H DEUXPEED® Marking Small Speakers Sound Louder TinyWire™ ™ TranSiC™ Dual Cool™ and Better™ Saving our world, 1mW/W/kW at a time™ EcoSPARK® MegaBuck™ SignalWise™ TTRriFUaEuClt UDReRteEcNt™T®* D EfficentMax™ MICROCOUPLER™ SmartMax™ i SerDes™ o ESBC™ MicroFET™ SMART START™ d ® MicroPak™ Solutions for Your Success™ e MicroPak2™ SPM® Fairchild® MillerDrive™ STEALTH™ UHC® Fairchild Semiconductor® MotionMax™ SuperFET® Ultra FRFET™ FACT Quiet Series™ MotionGrid® SuperSOT™-3 UniFET™ FACT® MTi® SuperSOT™-6 VCX™ FAST® MTx® SuperSOT™-8 VisualMax™ FastvCore™ MVN® SupreMOS® VoltagePlus™ FETBench™ mWSaver® SyncFET™ XS™ FPS™ OptoHiT™ Sync-Lock™ Xsens™ 仙童™ *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. 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A critical component in any component of a life support, device, or intended for surgical implant into the body or (b) support or sustain life, system whose failure to perform can be reasonably expected to cause and (c) whose failure to perform when properly used in accordance with the failure of the life support device or system, or to affect its safety or instructions for use provided in the labeling, can be reasonably effectiveness. expected to result in a significant injury of the user. ANTI-COUNTERFEITING POLICY Fairchild Semiconductor Corporation’s Anti-Counterfeiting Policy. Fairchild’s Anti-Counterfeiting Policy is also stated on our external website, www.Fairchildsemi.com, under Sales Support. Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild’s quality standards for handing and storage and provide access to Fairchild’s full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Datasheet contains the design specifications for product development. Specifications Advance Information Formative / In Design may change in any manner without notice. Datasheet contains preliminary data; supplementary data will be published at a later Preliminary First Production date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. Datasheet contains final specifications. Fairchild Semiconductor reserves the right to No Identification Needed Full Production make changes at any time without notice to improve the design. Datasheet contains specifications on a product that is discontinued by Fairchild Obsolete Not In Production Semiconductor. The datasheet is for reference information only. Rev. I71 ©2003 Fairchild Semiconductor Corporation 5 www.fairchildsemi.com ISL9R460PF2 Rev. C2

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