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  • 型号: IS61WV25616BLL-10TL
  • 制造商: ISSI
  • 库位|库存: xxxx|xxxx
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IS61WV25616BLL-10TL产品简介:

ICGOO电子元器件商城为您提供IS61WV25616BLL-10TL由ISSI设计生产,在icgoo商城现货销售,并且可以通过原厂、代理商等渠道进行代购。 IS61WV25616BLL-10TL价格参考¥11.19-¥13.98。ISSIIS61WV25616BLL-10TL封装/规格:存储器, SRAM - 异步 存储器 IC 4Mb (256K x 16) 并联 10ns 44-TSOP II。您可以下载IS61WV25616BLL-10TL参考资料、Datasheet数据手册功能说明书,资料中有IS61WV25616BLL-10TL 详细功能的应用电路图电压和使用方法及教程。

产品参数 图文手册 常见问题
参数 数值
产品目录

集成电路 (IC)半导体

描述

IC SRAM 4MBIT 10NS 44TSOP静态随机存取存储器 4Mb 256Kx16 10ns Async 静态随机存取存储器 3.3v

产品分类

存储器

品牌

ISSI, Integrated Silicon Solution Inc

产品手册

点击此处下载产品Datasheet

产品图片

rohs

符合RoHS无铅 / 符合限制有害物质指令(RoHS)规范要求

产品系列

内存,静态随机存取存储器,ISSI IS61WV25616BLL-10TL-

数据手册

点击此处下载产品Datasheet点击此处下载产品Datasheet

产品型号

IS61WV25616BLL-10TL

产品种类

静态随机存取存储器

供应商器件封装

44-TSOP II

其它名称

706-1105
IS61WV25616BLL-10TL-ND
IS61WV25616BLL10TL

包装

托盘

商标

ISSI

存储器类型

SRAM - 异步

存储容量

4M (256K x 16)

安装风格

SMD/SMT

封装

Tray

封装/外壳

44-TSOP(0.400",10.16mm 宽)

封装/箱体

TSOP-44

工作温度

0°C ~ 70°C

工厂包装数量

135

接口

并联

最大工作温度

+ 70 C

最大工作电流

8 mA

最大时钟频率

100 MHz

最小工作温度

0 C

标准包装

135

格式-存储器

RAM

电压-电源

2.4 V ~ 3.6 V

电源电压-最大

3.6 V

电源电压-最小

2.4 V

类型

Asynchronous

系列

IS61WV25616BLL

组织

256 k x 16

访问时间

10 ns

速度

10ns

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PDF Datasheet 数据手册内容提取

SRAM Part Decoder SRAM Part Decoder IS 61 WV 12816 DBLL - 10 T L I ISSI prefix Temp. Grade Product Family Solder Type Operating Voltage Range/Product Type Package Code Density/Configuration Speed (ns or MHz) Die Rev/Voltage Range • SRAM Product Family • Die Rev/Voltage Range • Temp. Grade • Package Code 61/63 = High Speed Die Rev Blank = Commercial Grade ( 0C to +70°C ) B, B1, B2, B3 = BGA 62 = Low Power Blank-Z I = Industrial Grade ( -40C to +85°C ) CT = Copper TSOP 64 = Automotive High Speed A1 = Automotive Grade (-40C to +85°C) H = sTSOP 65 = Automotive Low Power Voltage Range (WV) A2 = Automotive Grade (-40C to +105°C) J = 300-mil SOJ 66 = Pseudo SRAM ALL = 1.65V to 2.2V A3 = Automotive Grade (-40C to +125°C) K = 400-mil SOJ 67 = Automotive PSRAM BLL = 2.5V to 3.6V LQ = LQFP M, M3, = BGA • Density/Configuration Q = SOP Example: • Operating Voltage Range/ Product Type T/T2 = TSOP 25636 = 256Kx36 Asynchronous SRAM TQ = TQFP 51216 = 512Kx16 C = 5V • Solder Type U = SOP 1M36 = 1Mx36 LV = 3.3V Blank = SnPb WV = Wide Voltage Range L = Lead-free (RoHS Compliant) • Speed (ns or MHz) Synchronous SRAM Example: P = Pipeline, F = Flowthrough 8 = 8ns NLP/NLF/NVP/NVF = No-Wait Option 200 = 200MHz LP/LF: Vcc = 3.3V, VccQ = 3.3V/2.5V VP/VF: Vcc = 2.5V, VccQ = 2.5V QD = QUAD, DD = DDR-II Common I/O: Vcc = 1.8V , VccQ = 1.8V/1.5V QUAD/P, DDR-ll/P Part Decoder IS 61 QDP 2 B4 4M18 A1 - 333 M3 L I Temp. Grade ISSI prefix RoHS Version Package Code Product Type Speed (MHz) Read Latency Burst Type Configuration ODT Option • Product Type • Read Latency (RL): • ODT Option (if supported): • Speed QD = QUAD For QUAD/DDR-II devices: A: No ODT Example: 250 = 250MHz QDP = QUADP Blank = 1.5 clock cycles A1: ODT Option 1 DD = DDR-II, Common I/O For QUADP/DDR-IIP devices: If ODT = HIGH or floating, a high range • Package Code DDP = DDR-IIP, Common I/O Blank = 2.5 clock cycles termination resistance is selected. B4 = 165 ball BGA (13 x 15 mm) 2 = 2.0 clock cycles If ODT = LOW, a low range M3 = 165-ball BGA (15 x 17 mm) • Configuration termination resistance is selected. 51236 = 512Kb x 36 • Burst Type: • RoHS Version A2: ODT Option 2 1M18 = 1Mb x 18 B2 = Burst 2 Blank = Leaded If ODT = HIGH, a high range 1M36 = 1Mb x 36 B4 = Burst 4 L = Lead-free termination resistance is selected. 2M18 = 2Mb x 18 If ODT = LOW or floating, ODT is disabled 2M36 = 2Mb x 36 • Temperature Range 4M18 = 4Mb x 18 Blank = Commercial (0C to 70°C) I = Industrial (-40C to 85°C) www.issi.com • Part Decoder • 2014

RLDRAM Part Decoder IS49NL C 36800 - 25E B L I Temp. Grade ISSI prefix RoHS Version Product Family Package Code I/O Type Speed Grade Configuration • Product Family: • Speed Grade: • Package Code: 49NL = RLDRAM®2 25E - tCK = 2.5ns; tRC = 15ns B = 168-ball FBGA (RLDRAM®3) 49RL = RLDRAM®3 25 - tCK = 2.5ns; tRC = 20ns B = 144-ball FBGA (RLDRAM®2) 33 - tCK = 3.3ns; tRC = 20ns • I/O Type: 5 - tCK = 5ns; tRC = 20ns • RoHS Version: C = Common I/O 093E - tCK = 0.93ns; tRC = 8ns Blank = SnPb S = Separate I/O 093 - tCK = 0.93ns; tRC = 10ns L = Lead-free (RoHS compliant) Blank = RLDRAM®3 107E - tCK = 1.07ns; tRC = 8ns • Temperature Range: 107 - tCK = 1.07ns; tRC = 10ns • Configuration Blank = Commercial (0C to 70°C) 125F - tCK = 1.25ns; tRC = 8ns 288Mb I = Industrial (-40C to 85°C) 125E - tCK = 1.25ns; tRC = 10ns 93200 = 32M x 9 125 - tCK = 1.25ns; tRC = 12ns 18160 = 16M x 18 36800 = 8M x 36 576Mb 96400 = 64M x 9 18320 = 32M x 18 or 2M x 18 x 16 banks 36160 = 16M x 36 or 1M x 36 x 16 banks 1Gb 18640 = 64M x 18 36320 = 32M x 36 www.issi.com • Part Decoder • 2014

Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: I SSI: IS61WV25616BLL-10TL IS64WV25616BLL-10CTLA3-TR