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IS61WV25616BLL-10TL产品简介:
ICGOO电子元器件商城为您提供IS61WV25616BLL-10TL由ISSI设计生产,在icgoo商城现货销售,并且可以通过原厂、代理商等渠道进行代购。 IS61WV25616BLL-10TL价格参考¥11.19-¥13.98。ISSIIS61WV25616BLL-10TL封装/规格:存储器, SRAM - 异步 存储器 IC 4Mb (256K x 16) 并联 10ns 44-TSOP II。您可以下载IS61WV25616BLL-10TL参考资料、Datasheet数据手册功能说明书,资料中有IS61WV25616BLL-10TL 详细功能的应用电路图电压和使用方法及教程。
参数 | 数值 |
产品目录 | 集成电路 (IC)半导体 |
描述 | IC SRAM 4MBIT 10NS 44TSOP静态随机存取存储器 4Mb 256Kx16 10ns Async 静态随机存取存储器 3.3v |
产品分类 | |
品牌 | ISSI, Integrated Silicon Solution Inc |
产品手册 | |
产品图片 | |
rohs | 符合RoHS无铅 / 符合限制有害物质指令(RoHS)规范要求 |
产品系列 | 内存,静态随机存取存储器,ISSI IS61WV25616BLL-10TL- |
数据手册 | |
产品型号 | IS61WV25616BLL-10TL |
产品种类 | 静态随机存取存储器 |
供应商器件封装 | 44-TSOP II |
其它名称 | 706-1105 |
包装 | 托盘 |
商标 | ISSI |
存储器类型 | SRAM - 异步 |
存储容量 | 4M (256K x 16) |
安装风格 | SMD/SMT |
封装 | Tray |
封装/外壳 | 44-TSOP(0.400",10.16mm 宽) |
封装/箱体 | TSOP-44 |
工作温度 | 0°C ~ 70°C |
工厂包装数量 | 135 |
接口 | 并联 |
最大工作温度 | + 70 C |
最大工作电流 | 8 mA |
最大时钟频率 | 100 MHz |
最小工作温度 | 0 C |
标准包装 | 135 |
格式-存储器 | RAM |
电压-电源 | 2.4 V ~ 3.6 V |
电源电压-最大 | 3.6 V |
电源电压-最小 | 2.4 V |
类型 | Asynchronous |
系列 | IS61WV25616BLL |
组织 | 256 k x 16 |
访问时间 | 10 ns |
速度 | 10ns |
SRAM Part Decoder SRAM Part Decoder IS 61 WV 12816 DBLL - 10 T L I ISSI prefix Temp. Grade Product Family Solder Type Operating Voltage Range/Product Type Package Code Density/Configuration Speed (ns or MHz) Die Rev/Voltage Range • SRAM Product Family • Die Rev/Voltage Range • Temp. Grade • Package Code 61/63 = High Speed Die Rev Blank = Commercial Grade ( 0C to +70°C ) B, B1, B2, B3 = BGA 62 = Low Power Blank-Z I = Industrial Grade ( -40C to +85°C ) CT = Copper TSOP 64 = Automotive High Speed A1 = Automotive Grade (-40C to +85°C) H = sTSOP 65 = Automotive Low Power Voltage Range (WV) A2 = Automotive Grade (-40C to +105°C) J = 300-mil SOJ 66 = Pseudo SRAM ALL = 1.65V to 2.2V A3 = Automotive Grade (-40C to +125°C) K = 400-mil SOJ 67 = Automotive PSRAM BLL = 2.5V to 3.6V LQ = LQFP M, M3, = BGA • Density/Configuration Q = SOP Example: • Operating Voltage Range/ Product Type T/T2 = TSOP 25636 = 256Kx36 Asynchronous SRAM TQ = TQFP 51216 = 512Kx16 C = 5V • Solder Type U = SOP 1M36 = 1Mx36 LV = 3.3V Blank = SnPb WV = Wide Voltage Range L = Lead-free (RoHS Compliant) • Speed (ns or MHz) Synchronous SRAM Example: P = Pipeline, F = Flowthrough 8 = 8ns NLP/NLF/NVP/NVF = No-Wait Option 200 = 200MHz LP/LF: Vcc = 3.3V, VccQ = 3.3V/2.5V VP/VF: Vcc = 2.5V, VccQ = 2.5V QD = QUAD, DD = DDR-II Common I/O: Vcc = 1.8V , VccQ = 1.8V/1.5V QUAD/P, DDR-ll/P Part Decoder IS 61 QDP 2 B4 4M18 A1 - 333 M3 L I Temp. Grade ISSI prefix RoHS Version Package Code Product Type Speed (MHz) Read Latency Burst Type Configuration ODT Option • Product Type • Read Latency (RL): • ODT Option (if supported): • Speed QD = QUAD For QUAD/DDR-II devices: A: No ODT Example: 250 = 250MHz QDP = QUADP Blank = 1.5 clock cycles A1: ODT Option 1 DD = DDR-II, Common I/O For QUADP/DDR-IIP devices: If ODT = HIGH or floating, a high range • Package Code DDP = DDR-IIP, Common I/O Blank = 2.5 clock cycles termination resistance is selected. B4 = 165 ball BGA (13 x 15 mm) 2 = 2.0 clock cycles If ODT = LOW, a low range M3 = 165-ball BGA (15 x 17 mm) • Configuration termination resistance is selected. 51236 = 512Kb x 36 • Burst Type: • RoHS Version A2: ODT Option 2 1M18 = 1Mb x 18 B2 = Burst 2 Blank = Leaded If ODT = HIGH, a high range 1M36 = 1Mb x 36 B4 = Burst 4 L = Lead-free termination resistance is selected. 2M18 = 2Mb x 18 If ODT = LOW or floating, ODT is disabled 2M36 = 2Mb x 36 • Temperature Range 4M18 = 4Mb x 18 Blank = Commercial (0C to 70°C) I = Industrial (-40C to 85°C) www.issi.com • Part Decoder • 2014
RLDRAM Part Decoder IS49NL C 36800 - 25E B L I Temp. Grade ISSI prefix RoHS Version Product Family Package Code I/O Type Speed Grade Configuration • Product Family: • Speed Grade: • Package Code: 49NL = RLDRAM®2 25E - tCK = 2.5ns; tRC = 15ns B = 168-ball FBGA (RLDRAM®3) 49RL = RLDRAM®3 25 - tCK = 2.5ns; tRC = 20ns B = 144-ball FBGA (RLDRAM®2) 33 - tCK = 3.3ns; tRC = 20ns • I/O Type: 5 - tCK = 5ns; tRC = 20ns • RoHS Version: C = Common I/O 093E - tCK = 0.93ns; tRC = 8ns Blank = SnPb S = Separate I/O 093 - tCK = 0.93ns; tRC = 10ns L = Lead-free (RoHS compliant) Blank = RLDRAM®3 107E - tCK = 1.07ns; tRC = 8ns • Temperature Range: 107 - tCK = 1.07ns; tRC = 10ns • Configuration Blank = Commercial (0C to 70°C) 125F - tCK = 1.25ns; tRC = 8ns 288Mb I = Industrial (-40C to 85°C) 125E - tCK = 1.25ns; tRC = 10ns 93200 = 32M x 9 125 - tCK = 1.25ns; tRC = 12ns 18160 = 16M x 18 36800 = 8M x 36 576Mb 96400 = 64M x 9 18320 = 32M x 18 or 2M x 18 x 16 banks 36160 = 16M x 36 or 1M x 36 x 16 banks 1Gb 18640 = 64M x 18 36320 = 32M x 36 www.issi.com • Part Decoder • 2014
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