IRLTS2242PbF HEXFET® Power MOSFET V -20 V     DSS A V ± 12 V D 1 6 D GS RDS(on) max 32 m D 2 5 D (@ V = -4.5V) GS R max DS(on) 55 m G 3 4 S (@ V = -2.5V) GS Qg (typical) 12 nC Top View TSOP-6 I D -6.9 A (@T = 25°C) A Applications  Battery operated DC motor inverter MOSFET  System/Load Switch Features Benefits Industry-Standard TSOP-6 Package results in Multi-Vendor Compatibility RoHS Compliant Containing no Lead, no Bromide and no Halogen  Environmentally Friendlier MSL1, Consumer Qualification Increased Reliability Standard Pack Base part number   Package Type   Orderable Part Number Form Quantity IRLTS2242TRPbF TSOP-6 Tape and Reel 3000 IRLTS2242TRPbF Absolute Maximum Ratings     Parameter Max. Units V Drain-to-Source Voltage - 20 DS V V Gate-to-Source Voltage ± 12 GS I @ T = 25°C Continuous Drain Current, V @ 4.5V -6.9 D A GS ID @ TA = 70°C Continuous Drain Current, VGS @ 4.5V -5.5 A I Pulsed Drain Current  -55 DM P @T = 25°C Power Dissipation 2.0 D A W P @T = 70°C Power Dissipation 1.3 D A Linear Derating Factor 0.02 W/°C T Operating Junction and -55 to + 150 J °C T Storage Temperature Range STG Notes  through  are on page 2 1 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback November 18, 2014

  IRLTS2242PbF Static @ T = 25°C (unless otherwise specified)         J Parameter Min. Typ. Max. Units Conditions BV Drain-to-Source Breakdown Voltage -20 ––– ––– V V = 0V, I = -250µA DSS GS D BV /T Breakdown Voltage Temp. Coefficient ––– 9.4 ––– mV/°C Reference to 25°C, I = -1mA DSS J D R Static Drain-to-Source On-Resistance ––– 26 32 V = -4.5V, I = -6.9A  DS(on) GS D m ––– 45 55 V = -2.5V, I = -5.5A  GS D V Gate Threshold Voltage -0.4 ––– -1.1 V GS(th) V = V , I = -10µA V Gate Threshold Voltage Coefficient ––– -3.8 ––– mV/°C DS GS D GS(th) I Drain-to-Source Leakage Current ––– ––– -1.0 V = -16V, V = 0V DSS µA DS GS ––– ––– -150 V = -16V, V = 0V,T = 125°C DS GS J I Gate-to-Source Forward Leakage ––– ––– -100 V = -12V GSS nA GS Gate-to-Source Reverse Leakage ––– ––– 100 V = 12V GS gfs Forward Transconductance 8.5 ––– ––– S V = -10V, I = -5.5A DS D Q Total Gate Charge ––– 12 ––– V = -10V g DS Q Pre-Vth Gate-to-Source Charge ––– 1.5 ––– nC V = -4.5V gs GS Q Gate-to-Drain Charge ––– 4.3 –––   I = -5.5A gd D RG Gate Resistance ––– 17   t Turn-On Delay Time ––– 5.8 ––– V = -10V, V = -4.5V d(on) DD GS t Rise Time ––– 18 ––– ns I = -5.5A r D t Turn-Off Delay Time ––– 81 –––   R = 6.8 d(off) G t Fall Time ––– 68 –––   f C Input Capacitance ––– 905 ––– V = 0V iss GS C Output Capacitance ––– 280 ––– pF V = -10V oss DS C Reverse Transfer Capacitance ––– 200 –––   ƒ = 1.0KHz rss         Diode Characteristics Parameter Min. Typ. Max. Units Conditions I Continuous Source Current MOSFET symbol S ––– ––– -2.0 D (Body Diode) showing the A I Pulsed Source Current integral reverse G SM ––– ––– -55 S (Body Diode)  p-n junction diode. V Diode Forward Voltage ––– ––– -1.2 V T = 25°C, I = -5.5A, V =0V  SD J S GS t Reverse Recovery Time ––– 41 62 ns T = 25°C, I = -5.5A, V = -16V rr J F DD Q Reverse Recovery Charge ––– 16 24 nC di/dt = 100A/µs  rr Thermal Resistance       Parameter Typ. Max. Units R Junction-to-Ambient  ––– 62.5 °C/W JA Notes:  Repetitive rating; pulse width limited by max. junction temperature. Pulse width  400µs; duty cycle  2%.  When mounted on 1 inch square PCB (FR-4). Please refer to AN-994 for more details: http://www.irf.com/technical-info/appnotes/an-994.pdf 2 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback November 18, 2014

  IRLTS2242PbF 100 100 VGS VGS TOP -10V TOP -10V -4.50V -4.50V A)( enrrtCu 10 BOTTOM ------222111......520854050050VVVVVV A)( enrrtCu 10 BOTTOM ------222111......520854050050VVVVVV e e ucr ucr o o S S o- o- -1.40V -tn 1 -tn 1 ai ai Dr -1.40V Dr , D , D -I 60µs PULSE WIDTH -I 60µs PULSE WIDTH Tj = 25°C Tj = 150°C 0.1 0.1 0.1 1 10 100 0.1 1 10 100 -VDS, Drain-to-Source Voltage (V) -VDS, Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 100 1.4 e ID = -6.9A c an VGS = -4.5V )A( nt sitRes 1.2 e n rrCeu ucr 10 Oe oucrS d)azeli1.0 oSo--tDanri-I, D TJ = 150°C TVJ6D =0S µ2 s=5 °P-C1U0LVSE WIDTH o--tDanri, Rn) DSo(Nmor ( 0.8 1.0 0.6 0 1 2 3 4 5 -60 -40 -20 0 20 40 60 80 100120140160 TJ , Junction Temperature (°C) -VGS, Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance vs. Temperature 10000 14.0 VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, Cds SHORTED ID= -5.5A Crss = Cgd V) 12.0 Coss = Cds + Cgd e( VDS= -16V g F)pe( ancitc 1000 Ciss aVo ltucerSo 108..00 VVDDSS== --140.0VV apaC Coss ot-e- 6.0 C, Crss atG 4.0 , S G V- 2.0 100 0.0 1 10 100 0 5 10 15 20 25 30 -VDS, Drain-to-Source Voltage (V) QG Total Gate Charge (nC) Fig 5. Typical Capacitance vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage 3 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback November 18, 2014

  IRLTS2242PbF 100 1000 OPERATION IN THIS AREA LIMITED BY RDS(on) A)( nt A)(t en 100 errCnu 10 rrCeu c 10 100µsec iDa rse TJ = 150°C ourSo- 1 1msec vere 1 TJ = 25°C n-tai 10msec R Dr , DS , D 0.1 Tc = 25°C DC -I I Tj = 150°C VGS = 0V Single Pulse 0.01 0.1 0.1 1 10 100 0.2 0.4 0.6 0.8 1.0 1.2 1.4 -VSD, Source-to-Drain Voltage (V) VDS, Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 1.4 8 )V 1.2 e( g a 6 olt 1.0 A)(ent oVdl h 0.8 rCur 4 esrh n e t 0.6 ai at Dr-I,D 2 G, )Sh(tG 0.4 IIIDDD === ---21150.00µmµAAA V- 0.2 ID = -10mA 0.0 0 -75 -50 -25 0 25 50 75 100 125 150 25 50 75 100 125 150 TJ , Temperature ( °C ) TA , Ambient Temperature (°C) Fig 9. Maximum Drain Current vs. Case Temperature Fig 10. Threshold Voltage vs. Temperature 100 D = 0.50 W /C 10 0.20 ° 0.10 )A 0.05 J h t 1 0.02 Z 0.01 ( e s n o p 0.1 s e R la m SINGLE PULSE re 0.01 ( THERMAL RESPONSE ) Notes: h T 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthja + TA 0.001 1E-006 1E-005 0.0001 0.001 0.01 0.1 1 10 100 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case 4 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback November 18, 2014

  IRLTS2242PbF ) 70 ) 450 m(nce ssaitRe 5600 ID = -6.9A mce( sanitRes 334050000 Vgs = -2.5V n Ocer Sou 3400 TJ = 125°C Oen oucrS 220500 - on-itDa r,n)DoS( 1200 TJ = 25°C o--t anriDn), o(S11055000 Vgs = -4.5V R 0 RD 0 0 2 4 6 8 10 12 0 10 20 30 40 50 60 -VGS, Gate -to -Source Voltage (V) -ID, Drain Current (A) Fig 12. On–Resistance vs. Gate Voltage Fig 13. Typical On–Resistance vs. Drain Current 120 16000 J) ID m y( 100 TOP -1.3A 14000 gre -2.0A En BOTTOM-5.5A 12000 e 80 h nca W) 10000 Aval 60 (r e 8000 e w s o ul P 6000 P 40 e lng 4000 Si , S 20 2000 A E 0 0 25 50 75 100 125 150 1E-8 1E-7 1E-6 1E-5 1E-4 1E-3 Starting TJ , Junction Temperature (°C) Time (sec) Fig 14. Maximum Avalanche Energy vs. Drain Current Fig 15. Typical Power vs. Time Fig 16. Diode Reverse Recovery Test Circuit for P-Channel HEXFET® Power MOSFETs 5 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback November 18, 2014

  IRLTS2242PbF VDD  Fig 17a. Gate Charge Test Circuit Fig 17b. Gate Charge Waveform Fig 18a. Unclamped Inductive Test Circuit Fig 18b. Unclamped Inductive Waveforms Fig 19a. Switching Time Test Circuit Fig 19b. Switching Time Waveforms 6 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback November 18, 2014

  IRLTS2242PbF TSOP-6 Package Outline   TSOP-6 Part Marking Information DATE CODE MARKING INSTRUCTIONS Y = YEAR W = WEEK WW = (1-26) IF PRECEDED BY LAST DIGIT OF CALENDAR YEAR PART NUMBER WORK YEAR Y WEEK W 2011 2001 1 01 A LOT 2012 2002 2 02 B 2013 2003 3 03 C CODE TOP 2014 2004 4 04 D 2015 2005 5 2016 2006 6 PART NUMBER CODE REFERENCE: 2017 2007 7 2018 2008 8 A = SI3443DV O = IRLTS6342TRPBF 2019 2009 9 B = IRF5800 P = IRFTS8342TRPBF 2020 2010 0 24 X 25 Y C = IRF5850 R = IRFTS9342TRPBF 26 Z D = IRF5851 S = Not applicable E = IRF5852 T = IRLTS2242TRPBF WW = (27-52) IF PRECEDED BY A LETTER F = IRF5801 WORK G = IRF5803 YEAR Y WEEK W H = IRF5804 2011 2001 A 27 A 2012 2002 B 28 B I = IRF5805 2013 2003 C 29 C J = IRF5806 2014 2004 D 30 D K = IRF5810 2015 2005 E N = IRF5802 2016 2006 F 2017 2007 G 2018 2008 H Note: A line above the work week 2019 2009 J (as shown here) indicates Lead-Free. 2020 2010 K 50 X 51 Y 52 Z Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 7 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback November 18, 2014

  IRLTS2242PbF TSOP-6 Tape and Reel Information 8mm 4mm FEED DIRECTION NOTES : 1. OUTLINE CONFORMS TO EIA-481 & EIA-541. 178.00 ( 7.008 ) MAX. 9.90 ( .390 ) 8.40 ( .331 ) NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541. Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ Qualifiction Information†   Consumer†† Qualification Level   (per JEDEC JESD47F†††guidelines) MSL1 Moisture Sensitivity Level TSOP-6 (per IPC/JEDEC J-STD-020D††) RoHS Compliant Yes † Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability/ †† Higher qualification ratings may be available should the user have such requirements. Please contact your International Rectifier sales representative for further information: http://www.irf.com/whoto-call/salesrep/ ††† Applicable version of JEDEC standard at the time of product release. Revision History Date Comment  Updated data sheet with IR corporate template. 11/18/2014 Updated figure 12 on page 5 for V from “20V” to “12V” due to error. GS IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA To contact International Rectifier, please visit http://www.irf.com/whoto-call/ 8 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback November 18, 2014

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