PD- 95223 IRLL3303PbF (cid:1) Surface Mount HEXFET® Power MOSFET (cid:1) Dynamic dv/dt Rating (cid:1) Logic-Level Gate Drive D V = 30V (cid:1) Fast Switching DSS (cid:1) Ease of Paralleling (cid:1) Advanced Process Technology RDS(on) = 0.031Ω G (cid:1) Ultra Low On-Resistance (cid:1) Lead-Free I = 4.6A D S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The SOT-223 package is designed for surface-mount using vapor phase, infra red, or wave soldering techniques. SOT-223 Its unique package design allows for easy automatic pick- and-place as with other SOT or SOIC packages but has the added advantage of improved thermal performance due to an enlarged tab for heatsinking. Power dissipation of 1.0W is possible in a typical surface mount application. Absolute Maximum Ratings Parameter Max. Units ID @ TA = 25°C Continuous Drain Current, VGS @ 10V** 6.5 ID @ TA = 25°C Continuous Drain Current, VGS @ 10V* 4.6 A ID @ TA = 70°C Continuous Drain Current, VGS @ 10V* 3.7 IDM Pulsed Drain Current (cid:2) 37 PD @TA = 25°C Power Dissipation (PCB Mount)** 2.1 W PD @TA = 25°C Power Dissipation (PCB Mount)* 1.0 W Linear Derating Factor (PCB Mount)* 8.3 mW/°C VGS Gate-to-Source Voltage ± 16 V E Single Pulse Avalanche Energy(cid:3) 140 mJ AS I Avalanche Current(cid:2) 4.6 A AR E Repetitive Avalanche Energy(cid:2) 0.10 mJ AR dv/dt Peak Diode Recovery dv/dt (cid:4) 1.3 V/ns TJ, TSTG Junction and Storage Temperature Range -55 to + 150 °C Thermal Resistance Parameter Typ. Max. Units RθJA Junction-to-Amb. (PCB Mount, steady state)* 93 120 °C/W RθJA Junction-to-Amb. (PCB Mount, steady state)** 48 60 * When mounted on FR-4 board using minimum recommended footprint. ** When mounted on 1 inch square copper board, for comparison with other SMD devices. www.irf.com 1 04/27/04

IRLL3303PbF Electrical Characteristics @ T = 25°C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage 30 ––– ––– V VGS = 0V, ID = 250µA ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.034 ––– V/°C Reference to 25°C, ID = 1mA RDS(on) Static Drain-to-Source On-Resistance –––––– –––––– 00..003415 Ω VVGGSS == 14.05VV,, IIDD == 42..63AA (cid:5)(cid:5) VGS(th) Gate Threshold Voltage 1.0 ––– ––– V VDS = VGS, ID = 250µA gfs Forward Transconductance 5.5 ––– ––– S VDS = 10V, ID = 2.3A IDSS Drain-to-Source Leakage Current –––––– –––––– 22550 µA VVDDSS == 3204VV,, VVGGSS == 00VV, TJ = 125°C IGSS Gate-to-Source Forward Leakage ––– ––– -100 nA VGS = -16V Gate-to-Source Reverse Leakage ––– ––– 100 VGS = 16V Qg Total Gate Charge ––– 34 50 ID = 4.6A Qgs Gate-to-Source Charge ––– 4.4 6.5 nC VDS = 24V Qgd Gate-to-Drain ("Miller") Charge ––– 10 16 VGS = 10V, See Fig. 6 and 9 (cid:5) td(on) Turn-On Delay Time ––– 7.2 ––– VDD = 15V tr Rise Time ––– 22 ––– ns ID = 4.6A td(off) Turn-Off Delay Time ––– 33 ––– RG = 6.2Ω tf Fall Time ––– 28 ––– RD = 3.2Ω, See Fig. 10 (cid:5) Ciss Input Capacitance ––– 840 ––– VGS = 0V Coss Output Capacitance ––– 340 ––– pF VDS = 25V Crss Reverse Transfer Capacitance ––– 170 ––– ƒ = 1.0MHz, See Fig. 5 Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current ––– ––– 0.91 MOSFET symbol (Body Diode) showing the A ISM Pulsed Source Current ––– ––– 37 integral reverse (Body Diode) (cid:2) p-n junction diode. VSD Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 4.6A, VGS = 0V (cid:5) trr Reverse Recovery Time ––– 65 98 ns TJ = 25°C, IF = 4.6A Qrr Reverse RecoveryCharge ––– 160 240 nC di/dt = 100A/µs (cid:5) ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Specification changes Rev. # Parameters Old spec. New spec. Comments Revision Date 1 VGS(th) (Max.) 2.5V No spec. Removed VGS(th) (Max). Specification 11/1/96 1 V (Max.) ±20 ±16 Decrease V (Max). Specification 11/1/96 GS GS Notes: (cid:2) Repetitive rating; pulse width limited by (cid:4)ISD ≤ 4.6A, di/dt ≤ 110A/µs, VDD ≤ V(BR)DSS, max. junction temperature. ( See fig. 11 ) TJ ≤ 150°C (cid:3) VDD = 15V, starting TJ = 25°C, L = 13mH (cid:5) Pulse width ≤ 300µs; duty cycle ≤ 2%. RG = 25Ω, IAS = 4.6A. (See Figure 12) 2 www.irf.com

IRLL3303PbF 100 VGS 100 VGS TOP 15V TOP 15V 10V 10V 7.0V 7.0V 5.5V 5.5V ent (A) B O T T O M 3443....0505VVVV nt (A) B O T T O M 3443....0505VVVV urr rre C u ce e C ur 10 rc 10 o u S o - S o - n-t -to 3.0V rai 3.0V ain D r I , D I , DD 20µs PULSE WIDTH 20µs PULSE WIDTH 1 TJ = 25°C A 1 TJ = 150°C A 0.1 1 10 0.1 1 10 V D S , Drain-to-Source Voltage (V) V D S , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 100 2.0 e I D = 4.6A c n a A) st nt ( Resi 1.5 re TJ = 25°C n ur O C TJ = 150°C ce d) ce ur ze ur 10 So ali 1.0 o - m o-S n-to Nor -t ai ( I , DrainD V20 D µ S s = P 1U0LVSE WIDTH R , DrDS(on) 0.5 VG S = 10V 1 A 0.0 A 3.0 3.5 4.0 4.5 5.0 5.5 -60 -40 -20 0 20 40 60 80 100 120 140 160 V , Gate-to-Source Voltage (V) T , Junction Temperature (°C) GS J Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com 3

IRLL3303PbF 1600 V G S = 0V, f = 1MHz 20 I D = 4.6A C is s = C g s + C g d , C d s SHORTED V D S = 24V 1400 C iss CC ro ss s s == CC dg sd + C gd e (V) 16 V D S = 15V g 1200 a F) olt p V e ( 1000 C oss e 12 c c citan 800 Sour C, Capa 600 Cr ss Gate-to- 8 400 V , GS 4 200 FOR TEST CIRCUIT SEE FIGURE 9 0 A 0 A 1 10 100 0 10 20 30 40 50 V D S , Drain-to-Source Voltage (V) Q G , Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Fig 6. Typical Gate Charge Vs. Drain-to-Source Voltage Gate-to-Source Voltage 100 100 OPERATION IN THIS AREA LIMITED ) BY RDS(on) A nt ( e verse Drain Curr 10 TJ = 150°C Drain Current (A) 10 100µs I , ReSD TJ = 25°C I , D 1ms T = 25°C A T J = 150°C 10ms 1 VG S = 0V A 1 Single Pulse A 0.4 0.6 0.8 1.0 1.2 1.4 0.1 1 10 100 V , Source-to-Drain Voltage (V) V , Drain-to-Source Voltage (V) SD DS Fig 7. Typical Source-Drain Diode Fig 8. Maximum Safe Operating Area Forward Voltage 4 www.irf.com

IRLL3303PbF R D QG VDS 10V VGS QGS QGD D.U.T. R G +-VDD VG 10V Pulse Width ≤ 1 µs Charge Duty Factor ≤ 0.1 % Fig 9a. Basic Gate Charge Waveform Fig 10a. Switching Time Test Circuit Current Regulator Same Type as D.U.T. VDS 50KΩ 90% 12V .2µF .3µF + D.U.T. -VDS 10% VGS VGS 3mA td(on) tr td(off) tf IG ID Current Sampling Resistors Fig 9b. Gate Charge Test Circuit Fig 10b. Switching Time Waveforms 1000 ) Z thJA100 D = 0.50 ( 0.20 se 10 0.10 on 0.05 p s 0.02 e al R 1 0.01 PDM m t r 1 e h SINGLE PULSE t2 T 0.1 (THERMAL RESPONSE) Notes: 1. Duty factor D = t 1 / t 2 0.01 2. Peak TJ = PD M x Z t h J A + T A A 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 10000 t , Rectangular Pulse Duration (sec) 1 Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com 5

IRLL3303PbF 350 ) ID J m TOP 2.1A 15V gy ( 300 B O T T O M 34..76AA er n E 250 e VDS L DRIVER nch a 200 al v A RG IADS.U.T +- VDDA ulse 150 P 20V tp 0.01Ω gle 100 n Si Fig 12a. Unclamped Inductive Test Circuit E , AS 50 VD D = 15V 0 A 25 50 75 100 125 150 Starting T , Junction Temperature (°C) V(BR)DSS J tp Fig 12c. Maximum Avalanche Energy Vs. Drain Current IAS Fig 12b. Unclamped Inductive Waveforms 6 www.irf.com

IRLL3303PbF Peak Diode Recovery dv/dt Test Circuit + Circuit Layout Considerations D.U.T • Low Stray Inductance (cid:4) • Ground Plane • Low Leakage Inductance Current Transformer - + (cid:3) (cid:5) - + - (cid:2) RG • dv/dt controlled by RG + • Driver same type as D.U.T. - VDD • ISD controlled by Duty Factor "D" • D.U.T. - Device Under Test Driver Gate Drive P.W. Period D = P.W. Period V =10V * GS D.U.T. I Waveform SD Reverse Recovery Body Diode Forward Current Current di/dt D.U.T. V Waveform DS Diode Recovery dv/dt V DD Re-Applied Voltage Body Diode Forward Drop Inductor Curent Ripple ≤ 5% ISD * V = 5V for Logic Level Devices GS Fig 13. For N-Channel HEXFETS www.irf.com 7

IRLL3303PbF SOT-223 (TO-261AA) Package Outline Dimensions are shown in milimeters (inches) SOT-223 (TO-261AA) Part Marking Information HEXFET PRODUCT MARKING THIS IS AN IRFL014 PART NUMBER LOT CODE INTERNATIONAL RECTIFIER FL014 AXXXX LOGO 314P DATE CODE A = ASSEMBLY SITE (YYWW) CODE YY = YEAR WW = WEEK TOP BOTTOM P = DESIGNATES LEAD-FREE PRODUCT (OPTIONAL) 8 www.irf.com

IRLL3303PbF SOT-223 (TO-261AA) Tape & Reel Information Dimensions are shown in milimeters (inches) 2.05 (.080) 43..1900 ((..116514)) 11..8655 ((..007625)) 00..3255 ((..001130)) TR 1.95 (.077) 7.55 (.297) 7.45 (.294) 16.30 (.641) 7.60 (.299) 15.70 (.619) 7.40 (.292) 1.60 (.062) 1.50 (.059) TYP. FEED DIRECTION 7.10 (.279) 2.30 (.090) 6.90 (.272) 2.10 (.083) 12.10 (.475) 11.90 (.469) NOTES : 1. CONTROLLING DIMENSION: MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541. 3. EACH O330.00 (13.00) REEL CONTAINS 2,500 DEVICES. 13.20 (.519) 15.40 (.607) 12.80 (.504) 11.90 (.469) 4 330.00 50.00 (1.969) (13.000) MIN. MAX. 18.40 (.724) NOTES : MAX. 1. OUTLINE COMFORMS TO EIA-418-1. 2. CONTROLLING DIMENSION: MILLIMETER.. 14.40 (.566) 4 3. DIMENSION MEASURED @ HUB. 12.40 (.488) 4. INCLUDES FLANGE DISTORTION @ OUTER EDGE. 3 Data and specifications subject to change without notice. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 04/04 www.irf.com 9

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