(cid:1)(cid:2)(cid:3)(cid:4)(cid:3)(cid:5)(cid:6)(cid:7)(cid:8)(cid:7)(cid:9) IRGB4B60KD1PbF IRGS4B60KD1PbF IRGSL4B60KD1PbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C V = 600V CES Features • Low VCE (on) Non Punch Through IGBT Technology. IC = 7.6A, TC=100°C • 10µs Short Circuit Capability. • Square RBSOA. G t > 10µs, T =150°C sc J • Positive VCE (on) Temperature Coefficient. E • Maximum Junction Temperature rated at 175°C. V typ. = 2.1V • Lead-Free n-channel CE(on) Benefits • Benchmark Efficiency for Motor Control. • Rugged Transient Performance. • Low EMI. • Excellent Current Sharing in Parallel Operation. TO-220 D2Pak TO-262 IRGB4B60KD1 IRGS4B60KD1 IRGSL4B60KD1 Absolute Maximum Ratings Parameter Max. Units V Collector-to-Emitter Voltage 600 V CES I @ T = 25°C Continuous Collector Current 11 C C I @ T = 100°C Continuous Collector Current 7.6 A C C I Pulse Collector Current (Ref.Fig.C.T.5) 22 CM I Clamped Inductive Load current (cid:0) 22 LM I @ T = 25°C Diode Continuous Forward Current 11 F C I @ T = 100°C Diode Continuous Forward Current 6.7 F C I Diode Maximum Forward Current 22 FM V Gate-to-Emitter Voltage ±20 V GE P @ T = 25°C Maximum Power Dissipation 63 W D C P @ T = 100°C Maximum Power Dissipation 31 D C T Operating Junction and -55 to +175 J T Storage Temperature Range °C STG Storage Temperature Range, for 10 sec. 300 (0.063 in. (1.6mm) from case) Thermal / Mechanical Characteristics Parameter Min. Typ. Max. Units R Junction-to-Case- IGBT ––– ––– 2.4 °C/W θJC R Junction-to-Case- Diode ––– ––– 6.1 θJC R Case-to-Sink, flat, greased surface ––– 0.50 ––– θCS R Junction-to-Ambient ––– ––– 62 θJA R Junction-to-Ambient (PCB Mount, steady state)(cid:1) ––– ––– 40 θJA Wt Weight ––– 1.44 ––– g www.irf.com 1 8/30/04

IRGB/S/SL4B60KD1PbF Electrical Characteristics @ T = 25°C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions Ref.Fig. V(BR)CES Collector-to-Emitter Breakdown Voltage 600 — — V VGE = 0V, IC = 500µA ∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage — 0.28 — V/°C VGE = 0V, IC = 1mA (25°C-150°C) — 2.1 2.5 IC = 4.0A, VGE = 15V, TJ = 25°C 5,6,7 VCE(on) Collector-to-Emitter Voltage — 2.5 2.8 V IC = 4.0A, VGE = 15V, TJ = 150°C 9,10,11 — 2.6 2.9 I = 4.0A, V = 15V, T = 175°C C GE J VGE(th) Gate Threshold Voltage 3.5 4.5 5.5 V VCE = VGE, IC = 250µA 9,10,11 ∆VGE(th)/∆TJ Threshold Voltage temp. coefficient — -8.1 — mV/°CVCE = VGE, IC = 1mA (25°C-150°C) 12 gfe Forward Transconductance — 1.7 — S V = 50V, I = 4.0A, PW = 80µs CE C — 1.0 150 V = 0V, V = 600V GE CE I Zero Gate Voltage Collector Current — 136 600 µA V = 0V, V = 600V, T = 150°C CES GE CE J — 722 2400 V = 0V, V = 600V, T = 175°C GE CE J VFM Diode Forward Voltage Drop — 1.4 2.0 V IF = 4.0A 8 — 1.3 1.8 I = 4.0A, T = 150°C F J — 1.2 1.7 I = 4.0A, T = 175°C F J I Gate-to-Emitter Leakage Current — — ±100 nA V = ±20V GES GE Switching Characteristics @ T = 25°C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions Ref.Fig. Qg Total Gate Charge (turn-on) — 12 — IC = 4.0A 23 Qge Gate-to-Emitter Charge (turn-on) — 1.7 — nC VCC = 400V CT1 Q Gate-to-Collector Charge (turn-on) — 6.5 — V = 15V gc GE Eon Turn-On Switching Loss — 73 80 IC = 4.0A, VCC = 400V CT4 Eoff Turn-Off Switching Loss — 47 53 µJ VGE = 15V, RG = 100Ω, L = 2.5mH E Total Switching Loss — 120 130 T = 25°C (cid:0) tot J t Turn-On delay time — 22 28 I = 4.0A, V = 400V d(on) C CC tr Rise time — 18 23 ns VGE = 15V, RG = 100Ω, L = 2.5mH CT4 t Turn-Off delay time — 100 110 T = 25°C d(off) J t Fall time — 66 80 f Eon Turn-On Switching Loss — 130 150 IC = 4.0A, VCC = 400V CT4 Eoff Turn-Off Switching Loss — 83 140 µJ VGE = 15V, RG = 100Ω, L = 2.5mH 13,15 Etot Total Switching Loss — 220 280 TJ = 150°C (cid:0) WF1,WF2 td(on) Turn-On delay time — 22 27 IC = 4.0A, VCC = 400V 14,16 tr Rise time — 18 22 ns VGE = 15V, RG = 100Ω, L = 2.5mH CT4 td(off) Turn-Off delay time — 120 130 TJ = 150°C WF1 tf Fall time — 79 89 WF2 C Input Capacitance — 190 — V = 0V ies GE Coes Output Capacitance — 25 — pF VCC = 30V 22 C Reverse Transfer Capacitance — 6.2 — f = 1.0MHz res RBSOA Reverse Bias Safe Operating Area FULL SQUARE TJ = 150°C, IC = 22A, Vp = 600V 4 VCC=500V,VGE = +15V to 0V,RG = 100Ω CT2 SCSOA Short Circuit Safe Operating Area 10 — — µs TJ = 150°C, Vp = 600V, RG = 100Ω CT3 VCC=360V,VGE = +15V to 0V WF4 Erec Reverse Recovery Energy of the Diode — 81 100 µJ TJ = 150°C 17,18,19 trr Diode Reverse Recovery Time — 93 — ns VCC = 400V, IF = 4.0A, L = 2.5mH 20,21 Irr Peak Reverse Recovery Current — 6.3 7.9 A VGE = 15V, RG = 100Ω CT4,WF3 Note (cid:1)(cid:1)to(cid:1)(cid:2)(cid:1)are on page 16 2 www.irf.com

IRGB/S/SL4B60KD1PbF 12 70 60 10 50 8 A) W) 40 (C 6 (ot I Pt 30 4 20 2 10 0 0 0 20 40 60 80 100 120 140 160 180 0 20 40 60 80 100 120 140 160 180 TC (°C) TC (°C) Fig. 1 - Maximum DC Collector Current vs. Fig. 2 - Power Dissipation vs. Case Case Temperature Temperature 100 100 10 100µs 10 A) A) ( C 1 C I I 1ms 1 0.1 10ms DC 0.01 0 0 1 10 100 1000 10000 10 100 1000 VCE (V) VCE (V) Fig. 3 - Forward SOA Fig. 4 - Reverse Bias SOA TC = 25°C; TJ ≤ 150°C TJ = 150°C; VGE =15V www.irf.com 3

IRGB/S/SL4B60KD1PbF 30 30 VGE = 18V VGE = 18V VGE = 15V VGE = 15V 25 VGE = 12V 25 VGE = 12V VGE = 10V VGE = 10V 20 VGE = 8.0V 20 VGE = 8.0V A) A) ( E 15 ( E 15 C C I I 10 10 5 5 0 0 0 2 4 6 8 10 12 0 2 4 6 8 10 12 VCE (V) VCE (V) Fig. 5 - Typ. IGBT Output Characteristics Fig. 6 - Typ. IGBT Output Characteristics T = -40°C; tp = 80µs T = 25°C; tp = 80µs J J 25 35 V = 18V GE VGE = 15V 30 20 VGE = 12V VGE = 10V 25 VGE = 8.0V 15 A() CE A()IF 1250 -40°C I 10 25°C 150°C 10 5 5 0 0 0 2 4 6 8 10 12 0.0 0.5 1.0 1.5 2.0 2.5 3.0 V (V) V (V) F CE Fig. 7 - Typ. IGBT Output Characteristics Fig. 8 - Typ. Diode Forward Characteristics T = 150°C; tp = 80µs tp = 80µs J 4 www.irf.com

IRGB/S/SL4B60KD1PbF 20 20 18 18 16 16 14 14 V) 12 ICE = 2.0A V) 12 ICE = 2.0A (E 10 ICE = 4.0A (E 10 ICE = 4.0A C C V 8 ICE = 8.0A V 8 ICE = 8.0A 6 6 4 4 2 2 0 0 5 10 15 20 5 10 15 20 VGE (V) VGE (V) Fig. 9 - Typical V vs. V Fig. 10 - Typical V vs. V CE GE CE GE T = -40°C T = 25°C J J 20 30 18 )Α 25 16 ( T = 25°C n t J 14 e urr 20 12 I = 2.0A C V) CE e (E 10 ICE = 4.0A ucr 15 VC 8 ICE = 8.0A Soo- TJ = 150°C 6 an-ti 10 Dr 4 ,D 5 I 2 0 0 5 10 15 20 0 5 10 15 20 VGE (V) VGS, Gate-to-Source Voltage (V) Fig. 11 - Typical V vs. V Fig. 12 - Typ. Transfer Characteristics CE GE T = 150°C V = 360V; tp = 10µs J CE www.irf.com 5

IRGB/S/SL4B60KD1PbF 350 1000 300 EON tdOFF 250 ns) 100 tF µJ) 200 me( ( egyr 150 Tng i tdON En hci 100 EOFF wSi 10 tR 50 0 1 1 2 3 4 5 6 7 8 9 10 0 2 4 6 8 10 IC (A) IC (A) Fig. 13 - Typ. Energy Loss vs. I Fig. 14 - Typ. Switching Time vs. I C C T = 150°C; L=2.5mH; V = 400V, T = 150°C; L=2.5mH; V = 400V J CE J CE R = 100Ω; V = 15V R = 100Ω; V = 15V G GE G GE 350 1000 300 E ON 250 s) n EnegµyJr() 125000 EOFF mTehngc( ii 100 tdOFtFF wi 100 S td ON 50 t R 0 10 0 100 200 300 400 500 0 100 200 300 400 500 RG (Ω) RG (Ω) Fig. 15 - Typ. Energy Loss vs. R Fig. 16 - Typ. Switching Time vs. R G G T = 150°C; L=2.5mH; V = 400V T = 150°C; L=2.5mH; V = 400V J CE J CE I = 4.0A; V = 15V I = 4.0A; V = 15V CE GE CE GE 6 www.irf.com

IRGB/S/SL4B60KD1PbF 10 7 9 RG = 100Ω 6 8 7 RG = 200Ω 5 A) 6 A) ( R ( R IR 5 RG = 330Ω IR 4 4 3 RG = 470Ω 3 2 1 2 0 1 2 3 4 5 6 7 8 9 10 0 100 200 300 400 500 IF (A) RG (Ω) Fig. 17 - Typical Diode I vs. I Fig. 18 - Typical Diode I vs. R RR F RR G T = 150°C T = 150°C; I = 4.0A J J F 7 700 600 100Ω 6 200Ω 8.0A 500 330Ω A) 5 Cµ) 470Ω ( R (R 400 R R 4.0A I 4 Q 300 2.0A 3 200 2 100 100 150 200 250 300 0 50 100 150 200 250 300 350 400 diF /dt (A/µs) diF /dt (A/µs) Fig. 19- Typical Diode I vs. di /dt Fig. 20 - Typical Diode Q RR F RR V = 400V; V = 15V; V = 400V; V = 15V;T = 150°C CC GE CC GE J I = 4.0A; T = 150°C F J www.irf.com 7

IRGB/S/SL4B60KD1PbF 150 125 100Ω 100 200Ω J) µ gy( 75 330Ω er En 470 Ω 50 25 0 0 1 2 3 4 5 6 7 8 9 10 I (A) F Fig. 21 - Typical Diode E vs. I RR F T = 150°C J 1000 16 14 Cies 300V 12 F) 100 400V p 10 ec( Coes V) an (E 8 acti VG Cap 10 Cres 6 4 2 1 0 0 20 40 60 80 100 0 2 4 6 8 10 12 14 VCE (V) Q G, Total Gate Charge (nC) Fig. 22- Typ. Capacitance vs. V Fig. 23 - Typical Gate Chargevs. V CE GE V = 0V; f = 1MHz I = 4.0A; L = 3150µH GE CE 8 www.irf.com

IRGB/S/SL4B60KD1PbF 10 ) D = 0.50 C 1 J h 0.20 Zes( t 00..0150 τJτJ R1R1 R2R2 R3R3 τCτR0i .(0°4C2/W9 ) 0τ.i0 (0s0e0c)01 pons 0.1 0.02 τ1τ1 τ2τ2 τ3τ3 1.3417 0.000178 Re 0.01 Ci= τi/Ri 1.0154 0.000627 a l Ci i/Ri m SINGLE PULSE her 0.01 ( THERMAL RESPONSE ) Notes: T 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.001 1E-006 1E-005 0.0001 0.001 0.01 0.1 1 t , Rectangular Pulse Duration (sec) 1 Fig 24. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT) 10 D = 0.50 )C hJ 0.20 t 1 Z Reponess( 000...100025 τJτJτ1τ1 R1R1 τ2τR22R2 Rτ33Rτ33 τR4τ4R44τCτR013i... 056(°996C096/442W ) 0 00 τ...000i 0(00s001e016c011)370 ma l 0.1 0.01 Ci= τi/Ri 0.7454 0.048846 er Ci i/Ri h T Notes: SINGLE PULSE 1. Duty Factor D = t1/t2 ( THERMAL RESPONSE ) 2. Peak Tj = P dm x Zthjc + Tc 0.01 1E-006 1E-005 0.0001 0.001 0.01 0.1 1 t , Rectangular Pulse Duration (sec) 1 Fig 25. Maximum Transient Thermal Impedance, Junction-to-Case (DIODE) www.irf.com 9

IRGB/S/SL4B60KD1PbF L L VCC 80 V + DUT DUT 0 - 480V Rg 1K Fig.C.T.1 - Gate Charge Circuit (turn-off) Fig.C.T.2 - RBSOA Circuit diode clamp / DUT Driver L - 5V DC 360V DUT / DRIVER VCC DUT Rg Fig.C.T.3 - S.C.SOA Circuit Fig.C.T.4 - Switching Loss Circuit VCC R = ICM DUT VCC Rg Fig.C.T.5 - Resistive Load Circuit 10 www.irf.com

IRGB/S/SL4B60KD1PbF 700 14 700 14 tf tr 600 12 600 12 Vce Vce Ice 500 10 500 10 90% Ice 90% Ice 400 8 400 8 5% Vce 10% Ice Vce (V) 300 5% Ice 6 Ice (A) Vce (V)300 5% Vce 6 Ice (A) 200 4 200 4 Ice 100 2 100 2 0 0 0 0 Eon Eoff Loss Loss -100 -2 -100 -2 0.4 0.6 0.8 1 1.2 0.35 0.45 0.55 0.65 Time (uS) Time (uS) Fig. WF1- Typ. Turn-off Loss Waveform Fig. WF2- Typ. Turn-on Loss Waveform @ TJ = 150°C using Fig. CT.4 @ TJ = 150°C using Fig. CT.4 100 6 400 40 QRR Vce tRR 350 35 0 4 300 30 -100 2 250 25 Ice Vf (V) -200 0 If (A) V(V)CE 125000 1250 (A)I(A)CE -300 -2 I Peak 10% Peak IRR IRR 100 10 -400 -4 50 5 -500 -6 0 0 -600 -8 -50 -5 0.05 0.15 0.25 0.35 30 40 50 60 70 Time (uS) Time (uS) Fig. WF3- Typ. Diode Recovery Waveform Fig. WF4- Typ. S.C Waveform @ T = 150°C using Fig. CT.4 @ T = 150°C using Fig. CT.3 J C www.irf.com 11

IRGB/S/SL4B60KD1PbF (cid:1)(cid:2)(cid:3)(cid:4)(cid:4)(cid:5)(cid:6)(cid:7)(cid:8)(cid:9)(cid:10)(cid:11)(cid:12)(cid:10)(cid:13)(cid:14)(cid:8)(cid:2)(cid:15)(cid:16)(cid:17)(cid:18)(cid:19)(cid:14) Dimensions are shown in millimeters (inches) 10.54 (.415) 3.78 (.149) - B - 2.87 (.113) 10.29 (.405) 3.54 (.139) 4.69 (.185) 2.62 (.103) - A - 4.20 (.165) 1.32 (.052) 1.22 (.048) 6.47 (.255) 4 6.10 (.240) 15.24 (.600) 14.84 (.584) LEAD ASSIGNMENTS 1.15 (.045) LEAD ASSIGNMENTS MIN HE X F E 1T - GATE IGBTs, CoPACK 1 2 3 1- G A T 2E - DRAIN 1- GATE 2- D R A 3I N- SOURCE2- COLLECTOR 3- S O U 4R - CDERAIN 3- EMITTER 4- DRAIN 4- COLLECTOR 14.09 (.555) 13.47 (.530) 4.06 (.160) 3.55 (.140) 1.40 (.055) 3X 00..9639 ((..003277)) 3X00..5456 ((..002128)) 3X1.15 (.045) 0.36 (.014) M B A M 2.92 (.115) 2.64 (.104) 2.54 (.100) 2X NOTES: 1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982. 3 OUTLINE CONFORMS TO JEDEC OUTLINE TO-220AB. 2 CONTROLLING DIMENSION : INCH 4 HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS. (cid:1)(cid:2)(cid:3)(cid:4)(cid:4)(cid:5)(cid:6)(cid:7)(cid:8)(cid:9)(cid:10)(cid:20)(cid:16)(cid:8)(cid:21)(cid:10)(cid:20)(cid:12)(cid:18)(cid:19)(cid:13)(cid:8)(cid:22)(cid:19)(cid:23)(cid:24)(cid:20)(cid:25)(cid:10)(cid:16)(cid:18)(cid:24)(cid:19) EXAMPLE: THIS IS AN IRF1010 LOT CODE 1789 ASSEMBLED ON WW 19, 1997 INTERNATIONAL PART NUMBER IN THE ASSEMBLY LINE "C" RECTIFIER LOGO Note: "P" in assembly line position indicates "Lead-Free" DATE CODE YEAR 7 = 1997 ASSEMBLY LOT CODE WEEK 19 LINE C 12 www.irf.com

IRGB/S/SL4B60KD1PbF (cid:26)(cid:1)(cid:9)(cid:10)(cid:12)(cid:8)(cid:9)(cid:10)(cid:11)(cid:12)(cid:10)(cid:13)(cid:14)(cid:8)(cid:2)(cid:15)(cid:16)(cid:17)(cid:18)(cid:19)(cid:14) Dimensions are shown in millimeters (inches) (cid:26)(cid:1)(cid:9)(cid:10)(cid:12)(cid:8)(cid:9)(cid:10)(cid:20)(cid:16)(cid:8)(cid:21)(cid:10)(cid:20)(cid:12)(cid:18)(cid:19)(cid:13)(cid:8)(cid:22)(cid:19)(cid:23)(cid:24)(cid:20)(cid:25)(cid:10)(cid:16)(cid:18)(cid:24)(cid:19)(cid:8)(cid:27)(cid:28)(cid:14)(cid:10)(cid:29)(cid:3)(cid:30)(cid:20)(cid:14)(cid:14)(cid:31) THIS IS AN IRF530S WITH PART NUMBER LOT CODE 8024 INTERNATIONAL ASSEMBLED ON WW 02, 2000 RECTIFIER F530S IN THE ASSEMBLY LINE "L" LOGO DATE CODE pNoosteit:io "nP "i nind iacsasteesm "bLleya lidn-eFree" ASSEMBLY YEAR 0 = 2000 LOT CODE WEEK 02 LINE L (cid:1)(cid:2) PART NUMBER INTERNATIONAL RECTIFIER F530S LOGO DATE CODE P = DESIGNATES LEAD-FREE ASSEMBLY PRODUCT (OPTIONAL) LOT CODE YEAR 0 = 2000 WEEK 02 A = ASSEMBLY SITE CODE www.irf.com 13

IRGB/S/SL4B60KD1PbF TO-262 Package Outline TO-262 Part Marking Information EXAMPLE: THIS IS AN IRL3103L LOT CODE 1789 PART NUMBER INTERNATIONAL ASSEMBLED ON WW 19, 1997 RECTIFIER IN THE ASSEMBLY LINE "C" LOGO Note: "P" in assembly line DATE CODE position indicates "Lead-Free" ASSEMBLY YEAR 7 = 1997 LOT CODE WEEK 19 LINE C OR PART NUMBER INTERNATIONAL RECTIFIER LOGO DATE CODE P = DESIGNATES LEAD-FREE ASSEMBLY PRODUCT (OPTIONAL) LOT CODE YEAR 7 = 1997 WEEK 19 A = ASSEMBLY SITE CODE 14 www.irf.com

IRGB/S/SL4B60KD1PbF D2Pak Tape & Reel Infomation TRR 1.60 (.063) 1.50 (.059) 43..1900 ((..116513)) 11..6500 ((..006539)) 0.368 (.0145) 0.342 (.0135) FEED DIRECTION 1.85 (.073) 11.60 (.457) 1.65 (.065) 11.40 (.449) 1155..4222 ((..660091)) 2243..3900 ((..995471)) TRL 1.75 (.069) 10.90 (.429) 1.25 (.049) 10.70 (.421) 4.72 (.136) 16.10 (.634) 4.52 (.178) 15.90 (.626) FEED DIRECTION 13.50 (.532) 27.40 (1.079) 12.80 (.504) 23.90 (.941) 4 330.00 60.00 (2.362) (14.173) MIN. MAX. 30.40 (1.197) NOTES : MAX. 1. COMFORMS TO EIA-418. 26.40 (1.039) 4 2. CONTROLLING DIMENSION: MILLIMETER. 24.40 (.961) 34.. DINIMCLEUNDSEIOSN F LMAENAGSEU RDEISDT O@R HTUIOBN. @ OUTER EDGE. 3 Notes: (cid:1) VCC = 80% (VCES), VGE = 15V, L = 100µH, RG = 100Ω. (cid:3) When mounted on 1" square PCB ( FR-4 or G-10 Material ). For recommended footprint and soldering techniques refer to application note #AN-994. (cid:2) Energy losses include "tail" and diode reverse recovery, using Diode FD059H06A5. TO-220AB package is not recommended for Surface Mount Application. Data and specifications subject to change without notice. This product has been designed and qualified for Industrial market. Qualification Standards can be found on IR’s Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 08/04 www.irf.com 15

Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/