StrongIRFET™ IRFS7534-7PPbF Application HEXFET® Power MOSFET  Brushed motor drive applications  BLDC motor drive applications   V 60V D DSS  Battery powered circuits R typ. 1.60m  Half-bridge and full-bridge topologies DS(on)  Synchronous rectifier applications max 1.95m G  Resonant mode power supplies I 255A D (Silicon Limited)  OR-ing and redundant power switches S  DC/DC and AC/DC converters ID (Package Limited) 240A  DC/AC inverters Benefits  Improved gate, avalanche and dynamic dV/dt ruggedness  Fully characterized capacitance and avalanche SOA  Enhanced body diode dV/dt and dI/dt capability  Lead-free, RoHS compliant G D S Gate Drain Source Base Part Number Package Type Standard Pack Complete Part Number Form Quantity Tube 50 IRFS7534-7PPbF IRFS7534-7PPbF D2Pak-7PIN Tape and Reel Left 800 IRFS7534TRL7PP ) 8 300 m ID = 100A Limited By Package ( e c 250 n a st 6 esi A) Rn (nt 200 O e cer Sou 4 TJ = 125°C rCnu rai 150 - no-t Dr,D 100 ia 2 I Dr , n) TJ = 25°C 50 o S( RD 0 0 4 6 8 10 12 14 16 18 20 25 50 75 100 125 150 175 VGS, Gate -to -Source Voltage (V) TC , Case Temperature (°C) Fig 1. Typical On-Resistance vs. Gate Voltage Fig 2. Maximum Drain Current vs. Case Temperature 1 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback November 5, 2014

  IRFS7534-7PPbF Absolute Maximum Rating Symbol Parameter Max. Units I @ T = 25°C Continuous Drain Current, V @ 10V (Silicon Limited) 255 D C GS I @ T = 100°C Continuous Drain Current, V @ 10V (Silicon Limited) 180 D C GS A I @ T = 25°C Continuous Drain Current, V @ 10V (Package Limited) 240 D C GS I Pulsed Drain Current  790 DM P @T = 25°C Maximum Power Dissipation 290 W D C Linear Derating Factor 2.0 W/°C V Gate-to-Source Voltage ± 20 V GS T Operating Junction and J -55 to + 175   TSTG Storage Temperature Range °C   Soldering Temperature, for 10 seconds (1.6mm from case) 300 Avalanche Characteristics  Symbol Parameter Max Units E Single Pulse Avalanche Energy  370 AS (Thermally limited) mJ   E Single Pulse Avalanche Energy  773 AS (Thermally limited) I Avalanche Current  A AR See Fig 15, 16, 23a, 23b E Repetitive Avalanche Energy  mJ AR Thermal Resistance   Symbol Parameter Typ. Max. Units R Junction-to-Case  ––– 0.51 JC °C/W   R Junction-to-Ambient  ––– 40 JA Static @ T = 25°C (unless otherwise specified) J Symbol Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 60 ––– ––– V V = 0V, I = 250µA (BR)DSS GS D V /T Breakdown Voltage Temp. Coefficient ––– 46 ––– mV/°C Reference to 25°C, I = 1mA (BR)DSS J D R Static Drain-to-Source On-Resistance ––– 1.60 1.95 V = 10V, I = 100A  DS(on) GS D m ––– 2.00 ––– V = 6.0V, I = 50A  GS D V Gate Threshold Voltage 2.1 ––– 3.7 V V = V , I = 250µA GS(th) DS GS D I Drain-to-Source Leakage Current ––– ––– 1.0 V = 60V, V = 0V DSS DS GS µA ––– ––– 150 V = 60V,V = 0V,T =125°C DS GS J I Gate-to-Source Forward Leakage ––– ––– 100 V = 20V GSS GS nA Gate-to-Source Reverse Leakage ––– ––– -100 V = -20V GS R Gate Resistance ––– 1.9 –––  G Notes: Calculated continuous current based on maximum allowable junction temperature. Bond wire current limit is 240A. Note that current limitations arising from heating of the device leads may occur with some lead mounting arrangements. (Refer to AN-1140) Repetitive rating; pulse width limited by max. junction temperature.  Limited by T , starting T = 25°C, L = 74µH, R = 50, I = 100A, V =10V. Jmax J G AS GS I  100A, di/dt  1240A/µs, V  V , T 175°C. SD DD (BR)DSS J Pulse width  400µs; duty cycle  2%.  C eff. (TR) is a fixed capacitance that gives the same charging time as C while V is rising from 0 to 80% V . oss oss DS DSS  C eff. (ER) is a fixed capacitance that gives the same energy as C while V is rising from 0 to 80% V . oss oss DS DSS  R is measured at T approximately 90°C.  J  Limited by T , starting T = 25°C, L = 1mH, R = 50, I = 39A, V =10V. Jmax J G AS GS  When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note #AN-994.please refer to application note to AN-994: http://www.irf.com/technical-info/appnotes/an-994.pdf 2 www.irf.com © 2013 International Rectifier Submit Datasheet Feedback November 5, 2014

  IRFS7534-7PPbF Dynamic Electrical Characteristics @ T = 25°C (unless otherwise specified) J Symbol Parameter Min. Typ. Max. Units Conditions gfs Forward Transconductance 190 ––– ––– S V = 10V, I =100A DS D Q Total Gate Charge ––– 200 300 I = 100A g D Q Gate-to-Source Charge ––– 50 ––– V = 30V gs nC   DS Q Gate-to-Drain Charge ––– 59 ––– V = 10V gd GS Q Total Gate Charge Sync. (Qg - Qgd) ––– 141 ––– sync t Turn-On Delay Time ––– 140 ––– V = 30V d(on) DD t Rise Time ––– 120 ––– I = 100A r D ns t Turn-Off Delay Time ––– 195 ––– R = 2.7 d(off) G t Fall Time ––– 86 ––– V = 10V f GS C Input Capacitance ––– 9990 ––– V = 0V iss GS C Output Capacitance ––– 915 ––– V = 25V oss DS C Reverse Transfer Capacitance ––– 590 ––– pF   ƒ = 1.0MHz rss C Effective Output Capacitance (Energy Related) ––– 900 ––– V = 0V, V = 0V to 48V oss eff.(ER) GS DS C Output Capacitance (Time Related) ––– 1150 ––– V = 0V, V = 0V to 48V oss eff.(TR) GS DS Diode Characteristics   Symbol Parameter Min. Typ. Max. Units Conditions Continuous Source Current MOSFET symbol I ––– ––– 255 D S (Body Diode) showing the A Pulsed Source Current integral reverse G I ––– ––– 790 SM (Body Diode) p-n junction diode. S V Diode Forward Voltage ––– ––– 1.2 V T = 25°C,I = 100A,V = 0V  SD J S GS dv/dt Peak Diode Recovery dv/dt  ––– 9.4 ––– V/ns T = 175°C,I =100A,V = 60V J S DS ––– 45 ––– T = 25°C V = 51V t Reverse Recovery Time ns J DD rr ––– 48 ––– T = 125°C I = 100A, J F ––– 64 ––– T = 25°C di/dt = 100A/µs  J Q Reverse Recovery Charge nC rr ––– 78 ––– T = 125°C   J I Reverse Recovery Current ––– 2.4 ––– A T = 25°C  RRM J 3 www.irf.com © 2013 International Rectifier Submit Datasheet Feedback November 5, 2014

  IRFS7534-7PPbF 1000 1000 VGS VGS TOP 15V TOP 15V 10V 10V A) 100 87..00VV A) 87..00VV enr(t Cur 10 BOTTOM 6554....0505VVVV (t enurrC100 BOTTOM 6554....0505VVVV e e c c ur ru o o S S o- 1 -o 4.5V tn- n-t 10 ai ia rD 4.5V Dr , D 0.1 , D I 60µs PULSE WIDTH I 60µs PULSE WIDTH Tj = 25°C Tj = 175°C 0.01 1 0.1 1 10 100 1000 0.1 1 10 100 1000 VDS, Drain-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V) Fig 3. Typical Output Characteristics Fig 4. Typical Output Characteristics 1000 2.5 e ID = 100A c an VGS = 10V A)(nt 100 sitRes 2.0 erCu rucer 10 TJ = 175°C Oen oucrS d)azeli1.5 Soo-tanr-iD, ID 1 V6D0SµT sJ= P=2U 52VL5S°CE WIDTH o--tDanri, Rn) So(DmorN ( 1.0 0.1 0.5 2.0 3.0 4.0 5.0 6.0 7.0 8.0 -60-40-20 0 20 40 60 80100120140160180 VGS, Gate-to-Source Voltage (V) TJ , Junction Temperature (°C) Fig 5. Typical Transfer Characteristics Fig 6. Normalized On-Resistance vs. Temperature 100000 14.0 VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, Cds SHORTED ID= 100A 12.0 CCrossss == CCdgsd + Cgd V)(e VDS= 48V F)pe( anc 10000 Ciss agtVo lucer 108..00 VVDDSS== 3102VV itpac Coss oSo- 6.0 aCC, 1000 Crss -tGaet 4.0 , S G V 2.0 100 0.0 1 10 100 0 50 100 150 200 250 VDS, Drain-to-Source Voltage (V) QG, Total Gate Charge (nC) Fig 7. Typical Capacitance vs. Fig 8. Typical Gate Charge vs. Drain-to-Source Voltage Gate-to-Source Voltage 4 www.irf.com © 2013 International Rectifier Submit Datasheet Feedback November 5, 2014

  IRFS7534-7PPbF 1000 100µsec 1msec )A A) n(t 100 TJ = 175°C (t n 100 Limited by e e package urr rru C C anri De 10 TJ = 25°C e oucrS 10 OIANRP TEEHARI AST ION srve on-t- LRIDMSIT(oEnD) BY eR, DS 1 Da ri, D 1 Tc = 25°C 10msec I I Tj = 175°C DC VGS = 0V Single Pulse 0.1 0.1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0.1 1 10 VSD, Source-to-Drain Voltage (V) VDS, Drain-toSource Voltage (V) Fig 9. Typical Source-Drain Diode Forward Voltage Fig 10. Maximum Safe Operating Area )V 78 1.6 ge( Id = 1.0mA a olt 76 V wn 1.2 o 74 d k a eBr 72 )µJ e oucrS 70 y( ngerE 0.8 o- n-t 68 ai 0.4 Dr , S 66 S D )R B 64 0.0 V( -60-40-20 0 20 40 60 80100120140160180 -10 0 10 20 30 40 50 60 TJ , Temperature ( °C ) VDS, Drain-to-Source Voltage (V) Fig 11. Drain-to-Source Breakdown Voltage Fig 12. Typical C Stored Energy oss ) 4.0  m e( Vgs = 5.5V c an 3.5 Vgs = 6.0V ts Vgs = 7.0V esi Vgs = 8.0V R Vgs = 10V On 3.0 e c ur o S 2.5 o- n-t ai rD 2.0 ), n o (S D R 1.5 0 20 40 60 80 100 120 140 160 180 200 ID, Drain Current (A) Fig 13. Typical On-Resistance vs. Drain Current 5 www.irf.com © 2013 International Rectifier Submit Datasheet Feedback November 5, 2014

  IRFS7534-7PPbF 1 W D = 0.50 C/ ° )C 0.1 00..2100 J h t 0.05 Z ( e 0.01 0.02 s n 0.01 o p s e R al m0.001 erh S( TINHGELREM PAULL RSEESPONSE ) Notes: T 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.0001 1E-006 1E-005 0.0001 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig 14. Maximum Effective Transient Thermal Impedance, Junction-to-Case 1000 Allowed avalanche Current vs avalanche pulsewidth, tav, assuming Tj = 150°C and Tstart =25°C (Single Pulse) A) ( tn 100 e rru C e h c n a al 10 v A Allowed avalanche Current vs avalanche pulsewidth, tav, assuming j = 25°C and Tstart = 150°C. 1 1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 tav (sec) Fig 15. Avalanche Current vs. Pulse width 400 TOP Single Pulse Notes on Repetitive Avalanche Curves , Figures 15, 16: (For further info, see AN-1005 at www.irf.com) BOTTOM 1.0% Duty Cycle 1.Avalanche failures assumption: J) ID = 100A Purely a thermal phenomenon and failure occurs at a m 300 y( temperature far in excess of Tjmax. This is validated for every g part type. nerE 2. Safe operation in Avalanche is allowed as long asTjmax is not e exceeded. h 200 3. Equation below based on circuit and waveforms shown in Figures c an 23a, 23b. alv 4. PD (ave) = Average power dissipation per single avalanche pulse. A, R 100 5 . BV = R aintecdre barseea kdduoriwngn avvoaltlaagnec h(1e.)3. factor accounts for voltage A E 6. Iav = Allowable avalanche current. 7. T = Allowable rise in junction temperature, not to exceed T jmax (assumed as 25°C in Figure 15, 16). 0 tav = Average time in avalanche. D = Duty cycle in avalanche = tav ·f 25 50 75 100 125 150 175 Z (D, t ) = Transient thermal resistance, see Figures 13) thJC av Starting TJ , Junction Temperature (°C) PD (ave) = 1/2 ( 1.3·BV·Iav) = T/ ZthJC I = 2T/ [1.3·BV·Z ] av th E = P t    Fig 16. Maximum Avalanche Energy vs. Temperature AS (AR) D (ave)·av 6 www.irf.com © 2013 International Rectifier Submit Datasheet Feedback November 5, 2014

  IRFS7534-7PPbF 4.0 20 IF = 60A V) 3.5 VR = 51V e( ag 15 TJ = 25°C oltV 3.0 TJ = 125°C d olesh 2.5 ID = 250µA )A( M 10 reht ta 2.0 IIDD == 11..00AmA IRR G , h) 1.5 5 S(t G 1.0 V 0.5 0 -75 -50 -25 0 25 50 75 100 125 150 175 0 200 400 600 800 1000 TJ , Temperature ( °C ) diF /dt (A/µs) Fig 17. Threshold Voltage vs. Temperature Fig 18. Typical Recovery Current vs. dif/dt 20 400 IF = 100A IF = 60A VR = 51V VR = 51V 15 TJ = 25°C 300 TJ = 25°C TJ = 125°C TJ = 125°C )A C) ( MR 10 n( R 200 R R I Q 5 100 0 0 0 200 400 600 800 1000 0 200 400 600 800 1000 diF /dt (A/µs) diF /dt (A/µs) Fig 19. Typical Recovery Current vs. dif/dt Fig 20. Typical Stored Charge vs. dif/dt 400 IF = 100A VR = 51V 300 TJ = 25°C TJ = 125°C C) n ( R 200 R Q 100 0 0 200 400 600 800 1000 diF /dt (A/µs) Fig 21. Typical Stored Charge vs. dif/dt 7 www.irf.com © 2013 International Rectifier Submit Datasheet Feedback November 5, 2014

  IRFS7534-7PPbF Fig 22. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs V(BR)DSS tp 15V VDS L DRIVER RG D.U.T + - VDD IAS A 20V tp 0.01 IAS Fig 23a. Unclamped Inductive Test Circuit Fig 23b. Unclamped Inductive Waveforms Fig 24a. Switching Time Test Circuit Fig 24b. Switching Time Waveforms Id Vds Vgs VDD  Vgs(th) Qgs1 Qgs2 Qgd Qgodr Fig 25a. Gate Charge Test Circuit Fig 25b. Gate Charge Waveform 8 www.irf.com © 2013 International Rectifier Submit Datasheet Feedback November 5, 2014

  IRFS7534-7PPbF D2Pak-7Pin Package Outline (Dimensions are shown in millimeters (inches)) Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 9 www.irf.com © 2013 International Rectifier Submit Datasheet Feedback November 5, 2014

  IRFS7534-7PPbF D2Pak-7Pin Part Marking Information D2Pak-7Pin Tape and Reel Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 10 www.irf.com © 2013 International Rectifier Submit Datasheet Feedback November 5, 2014

  IRFS7534-7PPbF Qualification Information†   Industrial Qualification Level   (per JEDEC JESD47F) †† Moisture Sensitivity Level D2Pak-7Pin MSL1 RoHS Compliant Yes † Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability/ †† Applicable version of JEDEC standard at the time of product release. Revision History Date Comments  Updated E = 773mJ on page 2 11/5/2014 AS(L =1mH)  Updated note 9 “Limited by T , starting T = 25°C, L = 1mH, R = 50, I = 39A, V =10V” on page 2 Jmax J G AS GS IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA To contact International Rectifier, please visit http://www.irf.com/whoto-call/ 11 www.irf.com © 2013 International Rectifier Submit Datasheet Feedback November 5, 2014

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