PD- 91822C IRFPS37N50A SMPS MOSFET HEXFET® Power MOSFET Applications V R max I l Switch Mode Power Supply (SMPS) DSS DS(on) D l Uninterruptable Power Supply 500V 0.13W 36A l High Speed Power Switching Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Avalanche Voltage and Current SUPER-247 l Effective Coss Specified (See AN 1001) Absolute Maximum Ratings Parameter Max. Units I @ T = 25°C Continuous Drain Current, V @ 10V 36 D C GS I @ T = 100°C Continuous Drain Current, V @ 10V 23 A D C GS I Pulsed Drain Current (cid:129) 144 DM P @T = 25°C Power Dissipation 446 W D C Linear Derating Factor 3.6 W/°C V Gate-to-Source Voltage ± 30 V GS dv/dt Peak Diode Recovery dv/dt (cid:131) 3.5 V/ns T Operating Junction and -55 to + 150 J TSTG Storage Temperature Range °C Soldering Temperature, for 10 seconds 300 (1.6mm from case ) Typical SMPS Topologies l Full Bridge Converters l Power Factor Correction Boost Notes (cid:129) through (cid:133) are on page 8 www.irf.com 1 12/14/99

IRFPS37N50A Static @ T = 25°C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage 500 ––– ––– V VGS = 0V, ID = 250µA RDS(on) Static Drain-to-Source On-Resistance ––– ––– 0.13 W VGS = 10V, ID = 22A (cid:132) VGS(th) Gate Threshold Voltage 2.0 ––– 4.0 V VDS = VGS, ID = 250µA IDSS Drain-to-Source Leakage Current ––– ––– 25 µA VDS = 500V, VGS = 0V ––– ––– 250 VDS = 400V, VGS = 0V, TJ = 150°C I Gate-to-Source Forward Leakage ––– ––– 100 nA VGS = 30V GSS Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -30V Dynamic @ T = 25°C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions gfs Forward Transconductance 20 ––– ––– S VDS = 50V, ID = 22A Qg Total Gate Charge ––– ––– 180 ID = 36A Qgs Gate-to-Source Charge ––– ––– 46 nC VDS = 400V Qgd Gate-to-Drain ("Miller") Charge ––– ––– 71 VGS = 10V, See Fig. 6 and 13 (cid:132) td(on) Turn-On Delay Time ––– 23 ––– VDD = 250V tr Rise Time ––– 98 ––– ns ID = 36A td(off) Turn-Off Delay Time ––– 52 ––– RG = 2.15W tf Fall Time ––– 80 ––– RD = 7.0W ,See Fig. 10 (cid:132) Ciss Input Capacitance ––– 5579 ––– VGS = 0V Coss Output Capacitance ––– 810 ––– VDS = 25V Crss Reverse Transfer Capacitance ––– 36 ––– pF ƒ = 1.0MHz, See Fig. 5 Coss Output Capacitance ––– 7905 ––– VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz Coss Output Capacitance ––– 221 ––– VGS = 0V, VDS = 400V, ƒ = 1.0MHz Coss eff. Effective Output Capacitance ––– 400 ––– VGS = 0V, VDS = 0V to 400V (cid:133) Avalanche Characteristics Parameter Typ. Max. Units E Single Pulse Avalanche Energy(cid:130) ––– 1260 mJ AS I Avalanche Current(cid:129) ––– 36 A AR E Repetitive Avalanche Energy(cid:129) ––– 44 mJ AR Thermal Resistance Parameter Typ. Max. Units Rq JC Junction-to-Case ––– 0.28 Rq CS Case-to-Sink, Flat, Greased Surface 0.24 ––– °C/W Rq JA Junction-to-Ambient ––– 40 Diode Characteristics Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current ––– ––– 36 MOSFET symbol D (Body Diode) showing the A ISM Pulsed Source Current ––– ––– 144 integral reverse G (Body Diode) (cid:129) p-n junction diode. S VSD Diode Forward Voltage ––– ––– 1.5 V TJ = 25°C, IS = 36A, VGS = 0V (cid:132) trr Reverse Recovery Time ––– 570 860 ns TJ = 25°C, IF = 36A Qrr Reverse RecoveryCharge ––– 8.6 13 µC di/dt = 100A/µs (cid:132) ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) 2 www.irf.com

IRFPS37N50A 1000 100 VGS VGS TOP 15V TOP 15V 10V 10V A) 87..00VV A) 87..00VV urrent ( 100 BOTTOM6554....0505VVVV urrent ( BOTTOM6554....0505VVVV C C e e c c our 10 our 10 S S o- o- 4.5V n-t n-t ai ai Dr 4.5V Dr I , D 1 I , D 20µs PULSE WIDTH 20µs PULSE WIDTH TJ = 25°C TJ = 150°C 0.1 1 0.1 1 10 100 0.1 1 10 100 VD S , Drain-to-Source Voltage (V) V D S , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1000 3.0 ID=36A e c A) an 2.5 ent ( esist Source Curr 100 TJ = 150 ° C ource On Rmalized) 12..50 I , Drain-to-D 10 TJ = 25 ° CV20 D µ Ss =P U50LVSE WIDTH R , Drain-to-SDS(on)(Nor 01..50 VGS=10V 1 0.0 4.0 5.0 6.0 7.0 8.0 9.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 VG S , Gate-to-Source Voltage (V) TJ , Junction Temperature ( ° C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com 3

IRFPS37N50A 100000 20 V G S = 0V, f = 1MHz ID=36A C is s = C g s + C g d , C d s SHORTED 10000 CC or s ss s == CC dg s d + C gd ge (V) 16 VVVDDDSSS=== 124050000VVV ) a pF Ci ss olt ce ( e V 12 n c a ur Capacit 1000 C oss e-to-So 8 C, at G 100 Cr ss V , GS 4 FOR TEST CIRCUIT SEE FIGURE 1 3 10 A 0 1 10 100 1000 0 40 80 120 160 200 V D S , Drain-to-Source Voltage (V) Q G , Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Fig 6. Typical Gate Charge Vs. Drain-to-Source Voltage Gate-to-Source Voltage 1000 1000 OPERATION IN THIS AREA LIMITED BY R DS(on) A) nt ( 100 e A)A) Curr nt (nt ( 100 10us ain TJ = 150 ° C urreurre se Dr 10 ain Cain C 100us I , ReverSD 1 TJ = 25 ° C I , DrI , DrD 10 TC= 25 ° C 110mmss T = 150 ° C J V G S = 0 V Single Pulse 0.1 1 0.2 0.4 0.6 0.8 1.0 1.2 1.4 10 100 1000 10000 VS D ,Source-to-Drain Voltage (V) VD S , Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Fig 8. Maximum Safe Operating Area Forward Voltage 4 www.irf.com

IRFPS37N50A R 40 D V DS V GS D.U.T. R A) 30 G +-VDD nt ( e 10V Curr 20 Pulse Width £ 1 µs n Duty Factor £ 0.1 % ai Dr I , D 10 Fig 10a. Switching Time Test Circuit VDS 90% 0 25 50 75 100 125 150 T , Case Temperature ( ° C) C 10% VGS Fig 9. Maximum Drain Current Vs. td(on) tr td(off) tf Case Temperature Fig 10b. Switching Time Waveforms 1 ) Z thJC D = 0.50 ( 0.1 e 0.20 s n po 0.10 s ermal Re0.01 000...000125 SINGLE PULSE PDM t1 h (THERMAL RESPONSE) t2 T Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ=PDMx ZthJC + TC 0.001 0.00001 0.0001 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5

IRFPS37N50A 3000 15V ID J) TOP 16A m VDS L DRIVER ergy (2500 BOTTOM 2336AA n E e 2000 RG D.U.T + ch IAS - VDDA alan1500 20V v tp 0.01W e A s Fig 12a. Unclamped Inductive Test Circuit ul1000 P V(BR)DSS gle n tp Si 500 E , AS 0 25 50 75 100 125 150 Starting T , Junction Temperature ( ° C) J IAS Fig 12c. Maximum Avalanche Energy Fig 12b. Unclamped Inductive Waveforms Vs. Drain Current Q G 10 V Q Q 580 GS GD ) V VG e ( g 560 a olt V Charge e h c Fig 13a. Basic Gate Charge Waveform an 540 al CurrentRegulator Av 12V Sam.2emFType50aKsW D.U.T. V , DSav 520 .3mF + D.U.T. -VDS 500 A 0 10 20 30 40 VGS I , Avalanche Current (A) av 3mA IG ID Fig 12d. Typical Drain-to-Source Voltage CurrentSamplingResistors Fig 13b. Gate Charge Test Circuit Vs. Avalanche Current 6 www.irf.com

IRFPS37N50A Peak Diode Recovery dv/dt Test Circuit + Circuit Layout Considerations D.U.T • Low Stray Inductance (cid:131) • Ground Plane • Low Leakage Inductance Current Transformer - + (cid:130) (cid:132) - + - (cid:129) RG • dv/dt controlled by RG + • Driver same type as D.U.T. V - DD • I controlled by Duty Factor "D" SD • D.U.T. - Device Under Test Driver Gate Drive P.W. Period D = P.W. Period V =10V * GS D.U.T. I Waveform SD Reverse Recovery Body Diode Forward Current Current di/dt D.U.T. V Waveform DS Diode Recovery dv/dt V DD Re-Applied Voltage Body Diode Forward Drop Inductor Curent Ripple £ 5% ISD * V = 5V for Logic Level Devices GS Fig 14. For N-channel HEXFET® Power MOSFETs www.irf.com 7

IRFPS37N50A Case Outline and Dimensions — Super-247 Dimensions are shown in millimeters Notes: (cid:129) Repetitive rating; pulse width limited by (cid:132) Pulse width £ 300µs; duty cycle £ 2%. max. junction temperature. ( See fig. 11 ) (cid:130) Starting T = 25°C, L = 1.94mH (cid:133) Coss eff. is a fixed capacitance that gives the same charging time J R = 25W , I = 36A. (See Figure 12) as Coss while VDS is rising from 0 to 80% VDSS G AS (cid:131)I £ 36A, di/dt £ 145A/µs, V £ V , SD DD (BR)DSS T £ 150°C J ** When mounted on 1" square PCB (FR-4 or G-10 Material ) . For recommended footprint and soldering techniques refer to application note #AN-994 WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 252-7105 IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020 IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111 IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086 IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 838 4630 IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan Tel: 886-2-2377-9936 Data and specifications subject to change without notice. 12/99 8 www.irf.com

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