IRFP32N50K, SiHFP32N50K Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Low Gate Charge Q Results in Simple Drive g V (V) 500 DS Requirement Available RDS(on) (Ω) VGS = 10 V 0.135 RoHS* • Improved Gate, Avalanche and Dynamic dV/dt Qg (Max.) (nC) 190 COMPLIANT Ruggedness Q (nC) 59 gs Q (nC) 84 • Fully Characterized Capacitance and Avalanche Voltage gd Configuration Single and Current • Low R D DS(on) • Compliant to RoHS Directive 2002/95/EC TO-247AC APPLICATIONS G • Switch Mode Power Supply (SMPS) • Uninterruptible Power Supply S D G S • High Speed Power Switching N-Channel MOSFET • Hard Switching and High Frequency Circuits ORDERING INFORMATION Package TO-247AC IRFP32N50KPbF Lead (Pb)-free SiHFP32N50K-E3 IRFP32N50K SnPb SiHFP32N50K ABSOLUTE MAXIMUM RATINGS (T = 25 °C, unless otherwise noted) C PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V 500 DS V Gate-Source Voltage V ± 30 GS T = 25 °C 32 C Continuous Drain Current V at 10 V I GS D T = 100 °C 20 A C Pulsed Drain Currenta I 130 DM Linear Derating Factor 3.7 W/°C Single Pulse Avalanche Energyb E 450 mJ AS Repetitive Avalanche Currenta I 32 A AR Repetitive Avalanche Energya E 46 mJ AR Maximum Power Dissipation T = 25 °C P 460 W C D Peak Diode Recovery dV/dtc dV/dt 13 V/ns Operating Junction and Storage Temperature Range T , T - 55 to + 150 J stg °C Soldering Recommendations (Peak Temperature) for 10 s 300d 10 lbf · in Mounting Torque 6-32 or M3 screw 1.1 N · m Notes a. Repetitive rating; pulse width limited by maximum junction temperature. b. Starting T = 25 °C, L = 0.87 mH, R = 25 Ω, I = 32 A. J g AS c. I ≤ 32 A, dI/dt ≤ 197 A/μs, V ≤ V , T ≤ 150 °C. SD DD DS J d. 1.6 mm from case. * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 91221 www.vishay.com S11-0448-Rev. C, 14-Mar-11 1 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

IRFP32N50K, SiHFP32N50K Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYP. MAX. UNIT Maximum Junction-to-Ambient R - 40 thJA Case-to-Sink, Flat, Greased Surface R 0.24 - °C/W thCS Maximum Junction-to-Case (Drain) R - 0.26 thJC SPECIFICATIONS (T = 25 °C, unless otherwise noted) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage V V = 0 V, I = 250 μA 500 - - V DS GS D V Temperature Coefficient ΔV /T Reference to 25 °C, I = 1 mA - 0.54 - V/°C DS DS J D Gate-Source Threshold Voltage V V = V , I = 250 μA 3.0 - 5.0 V GS(th) DS GS D Gate-Source Leakage I V = ± 30 V - - ± 100 nA GSS GS V = 500 V, V = 0 V - - 50 DS GS Zero Gate Voltage Drain Current I μA DSS V = 400 V, V = 0 V, T = 150 °C - - 250 DS GS J Drain-Source On-State Resistance R V = 10 V I = 32 Ab - 0.135 0.16 Ω DS(on) GS D Forward Transconductance g V = 50 V, I = 32 A 14 - - S fs DS D Dynamic Input Capacitance C - 5280 - iss V = 0 V, GS Output Capacitance C V = 25 V, - 550 - oss DS f = 1.0 MHz, see fig. 5 Reverse Transfer Capacitance C - 45 - rss pF V = 1.0 V, f = 1.0 MHz - 5630 - DS Output Capacitance C oss V = 0 V V = 400 V, f = 1.0 MHz - 155 - GS DS Effective Output Capacitance C eff. V = 0 V to 400 Vc - 265 - oss DS Total Gate Charge Q - - 190 g Gate-Source Charge Q V = 10 V I = 32 A, V = 400 Vb - - 59 nC gs GS D DS Gate-Drain Charge Q - - 84 gd Turn-On Delay Time t - 28 - d(on) RTuisren -TOimff eDelay Time tdt(or ff) RVgD D= =4 .235 Ω0 ,V V, GIDS == 3120 AV,b -- 14280 -- ns Fall Time t - 54 - f Drain-Source Body Diode Characteristics MOSFET symbol Continuous Source-Drain Diode Current IS showing the D - - 32 integral reverse A Pulsed Diode Forward Currenta ISM p - n junction diode G - - 130 S Body Diode Voltage V T = 25 °C, I = 32 A, V = 0 Vb - - 1.5 V SD J S GS Body Diode Reverse Recovery Time t - 530 800 ns rr Body Diode Reverse Recovery Charge Q T = 25 °C, I = 32 A, dI/dt = 100 A/μsb - 9.0 13.5 μC rr J F Body Diode Reverse Recovery Current I - 30 - A RRM Forward Turn-On Time t Intrinsic turn-on time is negligible (turn-on is dominated by L and L ) on S D Notes a. Repetitive rating; pulse width limited by maximum junction temperature. b. Pulse width ≤ 400 μs; duty cycle ≤ 2 %. c. C eff. is a fixed capacitance that gives the same charging time as C while V is rising from 0 % to 80 % V . oss oss DS DS www.vishay.com Document Number: 91221 2 S11-0448-Rev. C, 14-Mar-11 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

IRFP32N50K, SiHFP32N50K Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 1000 1000 VGS Top 15 V 12 V 10 V 100 8.0 V Drain-to-Source Current (A) 101 Bottom 7655....0050 VVVV Drain-to-Source Current (A) 11000 TJ = 1T5J0 =°C 25 °C , D , D 1 I 0.1 5.0 V I 20 μs PULSE WIDTH TJ = 25 °C V20D Sμs = P 5U0L VSE WIDTH 0.01 0.1 4 5 7 8 9 11 12 0.1 1 10 100 VDS, Drain-to-Source Voltage (V) VGS, Gate-to-Source Voltage (V) Fig. 1 - Typical Output Characteristics Fig. 3 - Typical Transfer Characteristics 100 d) 3.0 Top V 11G52S VV malize ID = 32 A 180.0 V V Nor 2.5 e Current (A) 10 Bottom 7655....0050 VVVV Resistance ( 2.0 Sourc 5.0 V e On 1.5 I, Drain-to-D 1 Drain-to-Sourc 01..50 20 μs PULSE WIDTH , on) TJ = 150 °C S( 0.1 RD 0.0 VGS = 10 V 0.1 1 10 100 - 60 - 40 - 20 0 20 40 60 80 100 120 140 160 VDS, Drain-to-Source Voltage (V) TJ, Junction Temperature Fig. 2 - Typical Output Characteristics Fig. 4 - Normalized On-Resistance vs. Temperature Document Number: 91221 www.vishay.com S11-0448-Rev. C, 14-Mar-11 3 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

IRFP32N50K, SiHFP32N50K Vishay Siliconix 100 000 1000 VGS = 0 V, f = 1 MHz Ciss = Cgs + Cgd, Cds SHORTED Crss = Cgd Coss = Cds + Cgd e (pF) 10 000 Ciss Current (A) 100 TJ = 150 °C citanc 1000 Drain 10 Capa Coss erse C, Rev TJ = 25 °C 100 , D 1 S I Crss 10 0.1 VGS = 0 V 1 10 100 1000 0.2 0.6 0.9 1.3 1.6 VDS, Drain-to-Source Voltage (V) VSD, Source-to-Drain Voltage (V) Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage Fig. 7 - Typical Source-Drain Diode Forward Voltage 20 1000 ID = 32 A OPERATING IN THIS AREA LIMITED VDS = 400 V VDS = 250 V BY RDS(on) V) 16 VDS = 100 V e ( g olta A)100 e V 12 nt ( 10 μs c e Sour Curr Gate-to- 8 , Drain D 10 100 μs , S I G V 4 1 ms TC = 25 °C TJ = 150 °C Single Pulse 10 ms 0 1 0 40 80 120 160 200 10 100 1000 10000 QG, Total Gate Charge (nC) VDS, Drain-to-Source Voltage (V) Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage Fig. 8 - Maximum Safe Operating Area www.vishay.com Document Number: 91221 4 S11-0448-Rev. C, 14-Mar-11 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

IRFP32N50K, SiHFP32N50K Vishay Siliconix R D V DS 35 V GS D.U.T. 30 R G + -VDD 25 A) 10 V ent ( 20 PDuultsye f awcitdotrh ≤≤ 01. 1µ %s urr C n Fig. 10a - Switching Time Test Circuit ai 15 Dr , D I 10 V DS 90 % 5 0 25 50 75 100 125 150 TC, Case Temperature (°C) 10 % V GS t t t t d(on) r d(off) f Fig. 9 - Maximum Drain Current vs. Case Temperature Fig. 10b - Switching Time Waveforms 1 )JC D = 0.50 Zth 0.1 e ( 0.20 s n po 0.10 s e 0.05 R hermal 0.01 00..0021 (THSEIRNMGALLE RPEUSLPSOENSE) PDM t1 T t2 Notes: 1. Duty factor D = t1/ t2 2. Peak TJ = PDM x ZthJC + TC 0.001 0.00001 0.0001 0.001 0.01 0.1 1 t , Rectangular Pulse Duration (sec) Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case Document Number: 91221 www.vishay.com S11-0448-Rev. C, 14-Mar-11 5 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

IRFP32N50K, SiHFP32N50K Vishay Siliconix V DS 15 V t p VDS L Driver RG D.U.T +- VDAD IAS 20 V IAS tp 0.01 Ω Fig. 12a - Unclamped Inductive Test Circuit Fig. 12b - Unclamped Inductive Waveforms 800 ID TOP 7 A J) 10 A m BOTTOM 16 A y ( 640 g er n E e ch 480 n a al v A e uls 320 P e gl n Si , S 160 A E 0 25 50 75 100 125 150 Starting TJ, Junction Temperature (°C) Fig. 12c - Maximum Avalanche Energy vs. Drain Current Current regulator Same type as D.U.T. Q 50 kΩ G 10 V 12 V 0.2 µF 0.3 µF QGS QGD + V D.U.T. - DS V G V GS 3 mA Charge I I G D Current sampling resistors Fig. 13a - Basic Gate Charge Waveform Fig. 13b - Gate Charge Test Circuit www.vishay.com Document Number: 91221 6 S11-0448-Rev. C, 14-Mar-11 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

IRFP32N50K, SiHFP32N50K Vishay Siliconix Peak Diode Recovery dV/dt Test Circuit + Circuit layout considerations D.U.T. (cid:129) Low stray inductance (cid:129) Ground plane (cid:129) Low leakage inductance current transformer - + - + - Rg (cid:129) dV/dt controlled by Rg + (cid:129) Driver same type as D.U.T. V - DD (cid:129) ISD controlled by duty factor “D” (cid:129) D.U.T. - device under test Driver gate drive Period D = P.W. P.W. Period V = 10 Va GS D.U.T. l waveform SD Reverse recovery Body diode forward current current dI/dt D.U.T. V waveform DS Diode recovery dV/dt V DD Re-applied voltage Body diode forward drop Inductor current Ripple ≤ 5 % ISD Note a. V = 5 V for logic level devices GS Fig. 14 - For N-Channel Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91221. Document Number: 91221 www.vishay.com S11-0448-Rev. C, 14-Mar-11 7 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Package Information www.vishay.com Vishay Siliconix TO-247AC (High Voltage) 4 A A B E 7 ØP (Datum B) E/2 S A2 Ø kMDBM 3 R/2 ØP1 A D2 Q 2 x R 4 4 (2) D D1 1 2 3 D 4 Thermal pad 5 L1 C L 4 E1 See view B A 0.01MDBM 2 x b2 C View A - A 2 x e 3 x b b4 A1 0.10MCAM (b1, b3, b5) Planting Base metal Lead Assignments 1. Gate D DE E 2. Drain 3. Source C C (c) c1 4. Drain (b, b2, b4) (4) Section C - C, D - D, E - E View B MILLIMETERS INCHES MILLIMETERS INCHES DIM. MIN. MAX. MIN. MAX. DIM. MIN. MAX. MIN. MAX. A 4.58 5.31 0.180 0.209 D2 0.51 1.30 0.020 0.051 A1 2.21 2.59 0.087 0.102 E 15.29 15.87 0.602 0.625 A2 1.17 2.49 0.046 0.098 E1 13.72 - 0.540 - b 0.99 1.40 0.039 0.055 e 5.46 BSC 0.215 BSC b1 0.99 1.35 0.039 0.053 Ø k 0.254 0.010 b2 1.53 2.39 0.060 0.094 L 14.20 16.25 0.559 0.640 b3 1.65 2.37 0.065 0.093 L1 3.71 4.29 0.146 0.169 b4 2.42 3.43 0.095 0.135 N 7.62 BSC 0.300 BSC b5 2.59 3.38 0.102 0.133 Ø P 3.51 3.66 0.138 0.144 c 0.38 0.86 0.015 0.034 Ø P1 - 7.39 - 0.291 c1 0.38 0.76 0.015 0.030 Q 5.31 5.69 0.209 0.224 D 19.71 20.82 0.776 0.820 R 4.52 5.49 0.178 0.216 D1 13.08 - 0.515 - S 5.51 BSC 0.217 BSC ECN: X13-0103-Rev. D, 01-Jul-13 DWG: 5971 Notes 1.Dimensioning and tolerancing per ASME Y14.5M-1994. 2.Contour of slot optional. 3.Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outermost extremes of the plastic body. 4.Thermal pad contour optional with dimensions D1 and E1. 5.Lead finish uncontrolled in L1. 6.Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154"). 7.Outline conforms to JEDEC outline TO-247 with exception of dimension c. 8.Xian and Mingxin actually photo. Revision: 01-Jul-13 1 Document Number: 91360 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Legal Disclaimer Notice www.vishay.com Vishay Disclaimer  ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. © 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED Revision: 08-Feb-17 1 Document Number: 91000

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