IRFP22N50A, SiHFP22N50A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Low Gate Charge Q Results in Simple Drive V (V) 500 g DS Requirement Available RDS(on) () VGS = 10 V 0.23 RoHS* (cid:129) Improved Gate, Avalanche and Dynamic dV/dt Qg (Max.) (nC) 120 Ruggedness COMPLIANT Q (nC) 32 gs (cid:129) Fully Characterized Capacitance and Avalanche Voltage Q (nC) 52 gd and Current Configuration Single (cid:129) Compliant to RoHS Directive 2002/95/EC D TO-247AC APPLICATIONS (cid:129) Switch Mode Power Supply (SMPS) (cid:129) Uninterruptable Power Supply G (cid:129) High Speed Power Switching S D TYPICAL SMPS TOPOLOGIES G S (cid:129) Full Bridge Converters N-Channel MOSFET (cid:129) Power Factor Correction Boost ORDERING INFORMATION Package TO-247AC IRFP22N50APbF Lead (Pb)-free SiHFP22N50A-E3 IRFP22N50A SnPb SiHFP22N50A ABSOLUTE MAXIMUM RATINGS (T = 25 °C, unless otherwise noted) C PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V 500 DS V Gate-Source Voltage V ± 30 GS T = 25 °C 22 Continuous Drain Current V at 10 V C I GS D T = 100 °C 14 A C Pulsed Drain Currenta I 88 DM Linear Derating Factor 2.2 W/°C Single Pulse Avalanche Energyb E 1180 mJ AS Repetitive Avalanche Currenta I 22 A AR Repetitive Avalanche Energya E 28 mJ AR Maximum Power Dissipation T = 25 °C P 277 W C D Peak Diode Recovery dV/dtc dV/dt 4.8 V/ns Operating Junction and Storage Temperature Range T, T - 55 to + 150 J stg °C Soldering Recommendations (Peak Temperature) for 10 s 300d 10 lbf · in Mounting Torque 6-32 or M3 screw 1.1 N · m Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Starting TJ = 25 °C, L = 4.87 mH, Rg = 25 , IAS = 22 A (see fig. 12). c. ISD  22 A, dI/dt  190 A/µs, VDD  VDS, TJ  150 °C. d. 1.6 mm from case. * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 91207 www.vishay.com S11-0446-Rev. C, 14-Mar-11 1 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

IRFP22N50A, SiHFP22N50A Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYP. MAX. UNIT Maximum Junction-to-Ambient R - 40 thJA Case-to-Sink, Flat, Greased Surface R 0.24 - °C/W thCS Maximum Junction-to-Case (Drain) R - 0.45 thJC SPECIFICATIONS (T = 25 °C, unless otherwise noted) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 µA 500 - - V VDS Temperature Coefficient VDS/TJ Reference to 25 °C, ID = 1 mA - 0.55 - V/°C Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA 2.0 - 4.0 V Gate-Source Leakage I V = ± 30 V - - ± 100 nA GSS GS V = 500 V, V = 0 V - - 25 DS GS Zero Gate Voltage Drain Current I µA DSS V = 400 V, V = 0 V, T = 125 °C - - 250 DS GS J Drain-Source On-State Resistance RDS(on) VGS = 10 V ID = 13 Ab - - 0.23  Forward Transconductance g V = 50 V, I = 13 Ab 12 - - S fs DS D Dynamic Input Capacitance C - 3450 - iss V = 0 V, GS Output Capacitance C V = 25 V, - 513 - oss DS f = 1.0 MHz, see fig. 5 Reverse Transfer Capacitance C - 27 - rss pF V = 1.0 V, f = 1.0 MHz 4935 DS Output Capacitance C oss V = 0 V V = 400 V, f = 1.0 MHz 137 GS DS Effective Output Capacitance C eff. V = 0 V to 400 Vc 264 oss DS Total Gate Charge Q - - 120 g I = 22 A, V = 400 V, Gate-Source Charge Q V = 10 V D DS - - 32 nC gs GS see fig. 6 and 13b Gate-Drain Charge Q - - 52 gd Turn-On Delay Time t - 26 - d(on) Rise Time t - 94 - r VDD = 250 V, ID = 22 A, ns Turn-Off Delay Time td(off) RG = 4.3 , RD = 11, see fig. 10b - 47 - Fall Time t - 47 - f Drain-Source Body Diode Characteristics MOSFET symbol Continuous Source-Drain Diode Current IS showing the D - - 22 integral reverse A G Pulsed Diode Forward Currenta I p - n junction diode - - 88 SM S Body Diode Voltage V T = 25 °C, I = 22A, V = 0 Vb - - 1.5 V SD J S GS Body Diode Reverse Recovery Time t - 570 850 ns rr T = 25 °C, I = 22 A, dI/dt = 100 A/µsb J F Body Diode Reverse Recovery Charge Q - 6.1 9.2 µC rr Forward Turn-On Time t Intrinsic turn-on time is negligible (turn-on is dominated by L and L ) on S D Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width  300 µs; duty cycle  2 %. c. C eff. is a fixed capacitance that gives the same charging time as C while V is rising from 0 % to 80 % V . oss oss DS DS www.vishay.com Document Number: 91207 2 S11-0446-Rev. C, 14-Mar-11 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

IRFP22N50A, SiHFP22N50A Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Fig. 1 - Typical Output Characteristics Fig. 3 - Typical Transfer Characteristics Fig. 2 - Typical Output Characteristics Fig. 4 - Normalized On-Resistance vs. Temperature Document Number: 91207 www.vishay.com S11-0446-Rev. C, 14-Mar-11 3 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

IRFP22N50A, SiHFP22N50A Vishay Siliconix Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage Fig. 7 - Typical Source-Drain Diode Forward Voltage Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage Fig. 8 - Maximum Safe Operating Area www.vishay.com Document Number: 91207 4 S11-0446-Rev. C, 14-Mar-11 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

IRFP22N50A, SiHFP22N50A Vishay Siliconix R D V DS V GS D.U.T. R G + -VDD 10 V Pulse width ≤ 1 µs Duty factor ≤ 0.1 % Fig. 10a - Switching Time Test Circuit V DS 90 % 10 % V GS t t t t d(on) r d(off) f Fig. 9 - Maximum Drain Current vs. Case Temperature Fig. 10b - Switching Time Waveforms Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case L VDS V Vary tp to obtain DS tp required I V AS DD RG D.U.T + V I - DD A VDS AS 10 V tp 0.01 Ω I AS Fig. 12a - Unclamped Inductive Test Circuit Fig. 12b - Unclamped Inductive Waveforms Document Number: 91207 www.vishay.com S11-0446-Rev. C, 14-Mar-11 5 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

IRFP22N50A, SiHFP22N50A Vishay Siliconix Fig. 12c - Maximum Avalanche Energy vs. Drain Current Fig. 12d - Typical Drain-to-Source Voltage vs. Avalanche Current Current regulator Same type as D.U.T. Q 50 kΩ G 10 V 12 V 0.2 µF 0.3 µF QGS QGD + V D.U.T. - DS V G V GS 3 mA Charge I I G D Current sampling resistors Fig. 13b - Gate Charge Test Circuit Fig. 13a - Basic Gate Charge Waveform www.vishay.com Document Number: 91207 6 S11-0446-Rev. C, 14-Mar-11 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

IRFP22N50A, SiHFP22N50A Vishay Siliconix Peak Diode Recovery dV/dt Test Circuit + Circuit layout considerations D.U.T. (cid:129) Low stray inductance (cid:129) Ground plane (cid:129) Low leakage inductance current transformer - + - + - Rg (cid:129) dV/dt controlled by Rg + (cid:129) Driver same type as D.U.T. V - DD (cid:129) ISD controlled by duty factor “D” (cid:129) D.U.T. - device under test Driver gate drive Period D = P.W. P.W. Period V = 10 Va GS D.U.T. l waveform SD Reverse recovery Body diode forward current current dI/dt D.U.T. V waveform DS Diode recovery dV/dt V DD Re-applied voltage Body diode forward drop Inductor current Ripple ≤ 5 % ISD Note a. V = 5 V for logic level devices GS Fig. 14 - For N-Channel Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91207. Document Number: 91207 www.vishay.com S11-0446-Rev. C, 14-Mar-11 7 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

Package Information www.vishay.com Vishay Siliconix TO-247AC (High Voltage) 4 A A B E 7 ØP (Datum B) E/2 S A2 Ø kMDBM 3 R/2 ØP1 A D2 Q 2 x R 4 4 (2) D D1 1 2 3 D 4 Thermal pad 5 L1 C L 4 E1 See view B A 0.01MDBM 2 x b2 C View A - A 2 x e 3 x b b4 A1 0.10MCAM (b1, b3, b5) Planting Base metal Lead Assignments 1. Gate D DE E 2. Drain 3. Source C C (c) c1 4. Drain (b, b2, b4) (4) Section C - C, D - D, E - E View B MILLIMETERS INCHES MILLIMETERS INCHES DIM. MIN. MAX. MIN. MAX. DIM. MIN. MAX. MIN. MAX. A 4.58 5.31 0.180 0.209 D2 0.51 1.30 0.020 0.051 A1 2.21 2.59 0.087 0.102 E 15.29 15.87 0.602 0.625 A2 1.17 2.49 0.046 0.098 E1 13.72 - 0.540 - b 0.99 1.40 0.039 0.055 e 5.46 BSC 0.215 BSC b1 0.99 1.35 0.039 0.053 Ø k 0.254 0.010 b2 1.53 2.39 0.060 0.094 L 14.20 16.25 0.559 0.640 b3 1.65 2.37 0.065 0.093 L1 3.71 4.29 0.146 0.169 b4 2.42 3.43 0.095 0.135 N 7.62 BSC 0.300 BSC b5 2.59 3.38 0.102 0.133 Ø P 3.51 3.66 0.138 0.144 c 0.38 0.86 0.015 0.034 Ø P1 - 7.39 - 0.291 c1 0.38 0.76 0.015 0.030 Q 5.31 5.69 0.209 0.224 D 19.71 20.82 0.776 0.820 R 4.52 5.49 0.178 0.216 D1 13.08 - 0.515 - S 5.51 BSC 0.217 BSC ECN: X13-0103-Rev. D, 01-Jul-13 DWG: 5971 Notes 1.Dimensioning and tolerancing per ASME Y14.5M-1994. 2.Contour of slot optional. 3.Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outermost extremes of the plastic body. 4.Thermal pad contour optional with dimensions D1 and E1. 5.Lead finish uncontrolled in L1. 6.Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154"). 7.Outline conforms to JEDEC outline TO-247 with exception of dimension c. 8.Xian and Mingxin actually photo. Revision: 01-Jul-13 1 Document Number: 91360 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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