IRFL9110, SiHFL9110 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Surface mount V (V) -100 • Available in tape and reel DS • Dynamic dV/dt rating RDS(on) () VGS = -10 V 1.2 • Repetitive avalanche rated Q (Max.) (nC) 8.7 g • P-channel Qgs (nC) 2.2 • Fast switching Available Qgd (nC) 4.1 • Ease of paralleling Configuration Single • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 S DESCRIPTION Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, SOT-223 ruggedized device design, low on-resistance and G D cost-effectiveness. The SOT-223 package is designed for surface-mount using S vapor phase, infrared, or wave soldering techniques. Its D G unique package design allows for easy automatic pick-and-place as with other SOT or SOIC packages but Marking code: FF D has the added advantage of improved thermal performance P-Channel MOSFET due to an enlarged tab for heatsinking. Power dissipation of greater than 1.25 W is possible in a typical surface mount application. ORDERING INFORMATION Package SOT-223 SOT-223 Lead (Pb)-free and Halogen-free SiHFL9110-GE3 SiHFL9110TR-GE3 a IRFL9110PbF IRFL9110TRPbF a Lead (Pb)-free SiHFL9110-E3 SiHFL9110T-E3 a Note a. See device orientation. ABSOLUTE MAXIMUM RATINGS (T = 25 °C, unless otherwise noted) C PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V -100 DS V Gate-Source Voltage V ± 20 GS T = 25 °C -1.1 C Continuous Drain Current V at - 10 V I GS D T = 100 °C -0.69 A C Pulsed Drain Current a I -8.8 DM Linear Derating Factor 0.025 W/°C Linear Derating Factor (PCB Mount) e 0.017 Single Pulse Avalanche Energy b E 100 mJ AS Avalanche Current a I -1.1 A AR Repetitive Avalanche Energy a E 0.31 mJ AR Maximum Power Dissipation T = 25 °C 3.1 C P W Maximum Power Dissipation (PCB Mount) e T = 25 °C D 2.0 A Peak Diode Recovery dV/dt c dV/dt -5.5 V/ns Operating Junction and Storage Temperature Range T , T -55 to +150 J stg °C Soldering Recommendations (Peak Temperature) d for 10 s 300 Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. VDD = -25 V, starting TJ = 25 °C, L = 7.7 mH, Rg = 25 , IAS = -4.4 A (see fig. 12). c. ISD  -4.4 A, dI/dt  -75 A/μs, VDD  VDS, TJ  150 °C. d. 1.6 mm from case. e. When mounted on 1" square PCB (FR-4 or G-10 material). S14-1686-Rev. F, 18-Aug-14 1 Document Number: 91196 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

IRFL9110, SiHFL9110 www.vishay.com Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOL MIN. TYP. MAX. UNIT Maximum Junction-to-Ambient  R - - 60 (PCB Mount) a thJA °C/W Maximum Junction-to-Case (Drain) R - - 40 thJC Note a. When mounted on 1" square PCB (FR-4 or G-10 material). SPECIFICATIONS (T = 25 °C, unless otherwise noted) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage V V = 0 V, I = -250 μA -100 - - V DS GS D VDS Temperature Coefficient VDS/TJ Reference to 25 °C, ID = -1 mA - -0.091 - V/°C Gate-Source Threshold Voltage V V = V , I = -250 μA -2.0 - -4.0 V GS(th) DS GS D Gate-Source Leakage I V = ± 20 V - - ± 100 nA GSS GS V = -100 V, V = 0 V - - -100 DS GS Zero Gate Voltage Drain Current I μA DSS V = -80 V, V = 0 V, T = 125 °C - - - 500 DS GS J Drain-Source On-State Resistance RDS(on) VGS = -10 V ID = -0.66 A b - - 1.2  Forward Transconductance g V = -50 V, I = -0.66 A 0.82 - - S fs DS D Dynamic Input Capacitance C - 200 - iss V = 0 V, GS Output Capacitance C V = - 25 V, - 94 - pF oss DS f = 1.0 MHz, see fig. 5 Reverse Transfer Capacitance C - 18 - rss Total Gate Charge Q - - 8.7 g I = -4.0 A, V = -80 V, Gate-Source Charge Q V = -10 V D DS - - 2.2 nC gs GS see fig. 6 and 13 b Gate-Drain Charge Q - - 4.1 gd Turn-On Delay Time t - 10 - d(on) Rise Time tr VDD = -50 V, ID = -4.0 A, - 27 - ns Turn-Off Delay Time td(off) RG = 24 , RD = 11 , see fig. 10 b - 15 - Fall Time t - 17 - f Internal Drain Inductance L Between lead, D - 4.0 - D 6 mm (0.25") from nH package and center of G Internal Source Inductance LS die contact - 6.0 - S Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current I MOSFET symbol D - - -1.1 S showing the  A integral reverse G Pulsed Diode Forward Current a ISM p - n junction diode S - - -8.8 Body Diode Voltage V T = 25 °C, I = -1.1 A, V = 0 V b - - -5.5 V SD J S GS Body Diode Reverse Recovery Time t - 80 160 ns rr T = 25 °C, I = -4.0 A, dI/dt = 100 A/μs b J F Body Diode Reverse Recovery Charge Q - 0.15 0.30 μC rr Forward Turn-On Time t Intrinsic turn-on time is negligible (turn-on is dominated by L and L ) on S D Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width  300 μs; duty cycle  2 %. S14-1686-Rev. F, 18-Aug-14 2 Document Number: 91196 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

IRFL9110, SiHFL9110 www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Fig. 1 - Typical Output Characteristics Fig. 3 - Typical Transfer Characteristics Fig. 2 - Typical Output Characteristics Fig. 4 - Normalized On-Resistance vs. Temperature S14-1686-Rev. F, 18-Aug-14 3 Document Number: 91196 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

IRFL9110, SiHFL9110 www.vishay.com Vishay Siliconix Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage Fig. 7 - Typical Source-Drain Diode Forward Voltage Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage Fig. 8 - Maximum Safe Operating Area S14-1686-Rev. F, 18-Aug-14 4 Document Number: 91196 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

IRFL9110, SiHFL9110 www.vishay.com Vishay Siliconix R D V DS V GS D.U.T. R g - +VDD - 10 V Pulse width ≤ 1 µs Duty factor ≤ 0.1 % Fig. 10a - Switching Time Test Circuit t t t t d(on) r d(off) f V GS 10 % 90 % V DS Fig. 9 - Maximum Drain Current vs. Case Temperature Fig. 10b - Switching Time Waveforms Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case S14-1686-Rev. F, 18-Aug-14 5 Document Number: 91196 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

IRFL9110, SiHFL9110 www.vishay.com Vishay Siliconix L I AS V DS Vary t to obtain p required I AS V DS R D.U.T. g - +V DD IAS VDD t - 10 V p t 0.01 Ω p V DS Fig. 12a - Unclamped Inductive Test Circuit Fig. 12b - Unclamped Inductive Waveforms Fig. 12c - Maximum Avalanche Energy vs. Drain Current Current regulator Same type as D.U.T. Q 50 kΩ G - 10 V 12 V 0.2 µF 0.3 µF QGS QGD - V D.U.T. + DS V G V GS - 3 mA Charge I I G D Current sampling resistors Fig. 13a - Basic Gate Charge Waveform Fig. 13b - Gate Charge Test Circuit S14-1686-Rev. F, 18-Aug-14 6 Document Number: 91196 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

IRFL9110, SiHFL9110 www.vishay.com Vishay Siliconix Peak Diode Recovery dV/dt Test Circuit D.U.T. + Circuit layout considerations • Low stray inductance • Ground plane • Low leakage inductance current transformer - + - + - Rg • dV/dt controlled by Rg + •• DIS.UD c.To.n -t rdoellveidc eb uy ndduetry tfeascttor “D” - VDD Note • Compliment N-Channel of D.U.T. for driver Driver gate drive P.W. Period D = P.W. Period V = - 10 Va GS D.U.T. l waveform SD Reverse recovery Body diode forward current current dI/dt D.U.T. V waveform DS Diode recovery dV/dt V DD Re-applied voltage Body diode forward drop Inductor current Ripple ≤ 5 % ISD Note a. V = - 5 V for logic level and - 3 V drive devices GS Fig. 14 - For P-Channel          Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91196. S14-1686-Rev. F, 18-Aug-14 7 Document Number: 91196 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Package Information Vishay Siliconix SOT-223 (HIGH VOLTAGE) D B A 3 0.08 (0.003) B1 C 00..1100 ((00..000044))MMCC BMM A 4 3 H E 0.20 (0.008)MC AM L1 1 2 3 4 x L 3 x B e θ 0.10 (0.004)MC BM e1 4 x C MILLIMETERS INCHES DIM. MIN. MAX. MIN. MAX. A 1.55 1.80 0.061 0.071 B 0.65 0.85 0.026 0.033 B1 2.95 3.15 0.116 0.124 C 0.25 0.35 0.010 0.014 D 6.30 6.70 0.248 0.264 E 3.30 3.70 0.130 0.146 e 2.30 BSC 0.0905 BSC e1 4.60 BSC 0.181 BSC H 6.71 7.29 0.264 0.287 L 0.91 - 0.036 - L1 0.061 BSC 0.0024 BSC θ - 10' - 10' ECN: S-82109-Rev. A, 15-Sep-08 DWG: 5969 Notes 1. Dimensioning and tolerancing per ASME Y14.5M-1994. 2. Dimensions are shown in millimeters (inches). 3. Dimension do not include mold flash. 4. Outline conforms to JEDEC outline TO-261AA. Document Number: 91363 www.vishay.com Revision: 15-Sep-08 1

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