(cid:2)(cid:3)(cid:1)(cid:4)(cid:1)(cid:5)(cid:6)(cid:7)(cid:6)(cid:8)(cid:9) IRFL4315PbF HEXFET(cid:1)(cid:1)Power MOSFET Applications V R max I DSS DS(on) D (cid:1) High frequency DC-DC converters 150V 185m(cid:1)@V = 10V 2.6A GS Benefits (cid:1) Low Gate to Drain Charge to Reduce Switching Losses (cid:1) Fully Characterized Capacitance Including Effective C to Simplify Design, (See OSS App. Note AN1001) SOT-223 (cid:1) Fully Characterized Avalanche Voltage and Current (cid:1) Lead-Free Absolute Maximum Ratings Parameter Max. Units I @ T = 25°C Continuous Drain Current, V @ 10V 2.6 D A GS I @ T = 70°C Continuous Drain Current, V @ 10V 2.1 A D A GS I Pulsed Drain Current (cid:2) 21 DM P @T = 25°C Power Dissipation(cid:3) 2.8 W D A Linear Derating Factor 0.02 W/°C V Gate-to-Source Voltage ± 30 V GS dv/dt Peak Diode Recovery dv/dt (cid:4) 6.3 V/ns T Operating Junction and -55 to + 150 J TSTG Storage Temperature Range °C Soldering Temperature, for 10 seconds 300 (1.6mm from case ) Thermal Resistance Symbol Parameter Typ. Max. Units RθJA Junction-to-Ambient (PCB Mount, steady state)(cid:1) ––– 45 °C/W Notes(cid:1)(cid:1)(cid:2)through (cid:3) are on page 8 www.irf.com 1 09/22/10

IRFL4315PbF Static @ T = 25°C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage 150 ––– ––– V VGS = 0V, ID = 250µA ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.19 ––– V/°C Reference to 25°C, ID = 1mA (cid:6) RDS(on) Static Drain-to-Source On-Resistance ––– ––– 185 mΩ VGS = 10V, ID = 1.6A(cid:5)(cid:6) VGS(th) Gate Threshold Voltage 3.0 ––– 5.0 V VDS = VGS, ID = 250µA IDSS Drain-to-Source Leakage Current ––– ––– 25 µA VDS = 150V, VGS = 0V ––– ––– 250 VDS = 120V, VGS = 0V, TJ = 125°C I Gate-to-Source Forward Leakage ––– ––– 100 nA VGS = 30V GSS Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -30V Dynamic @ T = 25°C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions gfs Forward Transconductance 3.5 ––– ––– S VDS = 50V, ID = 1.6A Qg Total Gate Charge ––– 12 19 ID = 1.6A Qgs Gate-to-Source Charge ––– 2.1 3.1 nC VDS = 120V Qgd Gate-to-Drain ("Miller") Charge ––– 6.8 10 VGS = 10V td(on) Turn-On Delay Time ––– 8.4 ––– VDD = 75V tr Rise Time ––– 21 ––– ns ID = 1.6A td(off) Turn-Off Delay Time ––– 20 ––– RG = 15Ω tf Fall Time ––– 19 ––– VGS = 10V(cid:5)(cid:6) Ciss Input Capacitance ––– 420 ––– VGS = 0V Coss Output Capacitance ––– 100 ––– VDS = 25V Crss Reverse Transfer Capacitance ––– 25 ––– pF ƒ = 1.0MHz Coss Output Capacitance ––– 720 ––– VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz Coss Output Capacitance ––– 48 ––– VGS = 0V, VDS = 120V, ƒ = 1.0MHz Coss eff. Effective Output Capacitance ––– 98 ––– VGS = 0V, VDS = 0V to 120V (cid:7) Avalanche Characteristics Parameter Typ. Max. Units E Single Pulse Avalanche Energy(cid:8) ––– 38 mJ AS I Avalanche Current(cid:2) ––– 3.1 A AR Diode Characteristics Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current ––– ––– 2.6 MOSFET symbol D (Body Diode) (cid:1) showing the ISM Pulsed Source Current integral reverse G ––– ––– 21 (Body Diode) (cid:2) p-n junction diode. S VSD Diode Forward Voltage ––– ––– 1.5 V TJ = 25°C, IS = 2.1A, VGS = 0V(cid:5)(cid:6) trr Reverse Recovery Time ––– 61 91 ns TJ = 25°C, IF = 1.6A Qrr Reverse RecoveryCharge ––– 160 240 nC di/dt = 100A/µs(cid:1)(cid:6) 2 www.irf.com

IRFL4315PbF 100 100 VGS VGS TOP 15V TOP 15V 12V 12V 10V 10V A) 8.0V A) 8.0V uenr(r t 10 B O T T O M 7665....0505VVVV uenrr(t 10 B O T T O M 7665....0505VVVV C C e e c c ur 1 5.5V ur 5.5V o o S S o- o- n-t n-t 1 ai ai Dr 0.1 Dr ,D , D I I 20µs PULSE WIDTH 20µs PULSE WIDTH Tj = 25°C Tj = 150°C 0.01 0.1 0.1 1 10 100 0.1 1 10 100 VDS, Drain-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 100.00 2.5 ID= 2.6A ) Α ( 2.0 Cueuencrrr t 10.00 TJ = 150°C On Resistance malized) 1.5 Soo- urce (Nor 1.0 Dnar-, tiD TJ = 25°C Drain-to-So 0.5 I 1.00 V20DµSs =P U50LVSE WIDTH R , DS(on) 0.0 V GS=10V -60 -40 -20 0 20 40 60 80 100 120 140 160 5.0 6.0 7.0 8.0 9.0 10.0 T J , Junction Temperature ( ° C) V , Gate-to-Source Voltage (V) GS Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com 3

IRFL4315PbF 10000 12 VGS = 0V, f = 1 MHZ ID= 1.6A Ciss = Cgs + Cgd, Cds SHORTED CCrossss = = CCgdds + Cgd Vge() 10 VVDDSS== 17250VV Fanepacc()ti1000 Ciss VSaeooucr tl 68 VDS= 30V p o- CCa, 100 Coss ae-tt 4 G , S G 2 C V rss FOR TEST CIRCUIT SEE FIGURE 13 10 0 1 10 100 1000 0 2 4 6 8 10 12 14 VDS, Drain-to-Source Voltage (V) QG Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Fig 6. Typical Gate Charge Vs. Drain-to-Source Voltage Gate-to-Source Voltage 100 100 OPERATION IN THIS AREA LIMITED BY RDS(on) A) nt (A) 10 T J = 150 ° C Cuenrr(t 10 Reverse Drain Curre 1 T J = 25 ° C DSanoouecr--rt i 1 110m0sµescec I , SD I, D Tc = 25°C 10msec Tj = 150°C Single Pulse V G S = 0 V 0.1 0.1 0.0 0.5 1.0 1.5 2.0 2.5 1 10 100 1000 V S D ,Source-to-Drain Voltage (V) V , Drain-to-Source Voltage (V) DS Fig 7. Typical Source-Drain Diode Fig 8. Maximum Safe Operating Area Forward Voltage 4 www.irf.com

IRFL4315PbF 3.0 (cid:3) (cid:1) (cid:2) (cid:1)(cid:2) 2.5 (cid:2) (cid:21)(cid:2) (cid:4)(cid:5)(cid:6)(cid:5)(cid:7)(cid:5) (cid:3) (cid:21) 2.0 +(cid:2) A) - (cid:1)(cid:1) ent ( (cid:8)(cid:9)(cid:2) urr 1.5 C (cid:3)(cid:4)(cid:5)(cid:6)(cid:7)(cid:8)(cid:9)(cid:10)(cid:11)(cid:12)(cid:13)(cid:8)≤ 1 (cid:14)(cid:6) n (cid:1)(cid:4)(cid:12)(cid:15)(cid:8)(cid:16)(cid:17)(cid:18)(cid:12)(cid:19)(cid:20)(cid:8)≤ 0.1 % ai Dr I , D 1.0 Fig 10a. Switching Time Test Circuit 0.5 VDS 90% 0.0 25 50 75 100 125 150 T , Ambient Tempe°rature (°C) A 10% Fig 9. Maximum Drain Current Vs. VGS Ambient Temperature td(on) tr td(off) tf Fig 10b. Switching Time Waveforms 100 Z )thJA D = 0.50 ( 10 0.20 0.10 e s on 0.05 p es PDM mal R 1 0.02 t1 her 0.01 t2 T SINGLE PULSE Notes: (THERMAL RESPONSE) 1. Duty factor D = t 1 / t 2 2. Peak T J=PDM x Z thJA + TA 0.1 0.00001 0.0001 0.001 0.01 0.1 1 10 100 t 1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5

IRFL4315PbF Ω) 240 Ω) 4000 m m ce ( 220 ec( 3500 n n a a essit 200 essti 3000 R R n n 2500 O O e 180 VGS = 10V e ucr ucr 2000 So 160 So Dano, r--itn) 112400 Danor--t , in)11055000000 ID = 2.6A So( So( RD 100 RD 0 0 5 10 15 20 25 4.5 6.0 7.5 9.0 10.5 12.0 13.5 15.0 ID , Drain Current (A) VGS, Gate -to -Source Voltage (V) Fig 12. On-Resistance Vs. Drain Current Fig 13. On-Resistance Vs. Gate Voltage CurrentRegulator SameTypeasD.U.T. (cid:2) QG 50KΩ (cid:1)(cid:2) 12V .2µF .3µF QGS QGD + D.U.T. -VDS VG 100 VGS ID 3mA Charge TOP 1.4A 2.5A CurrentIGSamplingReIDsistors 80 BOTTOM 3.1A J) m Fig 14a&b. Basic Gate Charge Test Circuit y ( g and Waveform er 60 n E e h c n a al 40 v A 15V e s ul V(BR)DSS P tp VDS L DRIVER gle 20 n Si RG IADS.U.T +-VDDA E , AS 20V 0 tp 0.01Ω 25 50 75 100 125 150 IAS Starting Tj, Junction Temperature ( ° C) Fig 15c. Maximum Avalanche Energy Fig 15a&b. Unclamped Inductive Test circuit Vs. Drain Current and Waveforms 6 www.irf.com

IRFL4315PbF (cid:1)(cid:2)(cid:3)(cid:4)(cid:5)(cid:5)(cid:6)(cid:7)(cid:8)(cid:3)(cid:2)(cid:4)(cid:5)(cid:9)(cid:10)(cid:11)(cid:11)(cid:12)(cid:7)(cid:13)(cid:14)(cid:15)(cid:16)(cid:14)(cid:17)(cid:18)(cid:7)(cid:2)(cid:19)(cid:20)(cid:21)(cid:22)(cid:23)(cid:18) (cid:4)(cid:10)(cid:11)(cid:12)(cid:13)(cid:14)(cid:10)(cid:15)(cid:13)(cid:14)(cid:16)(cid:17)(cid:18)(cid:12)(cid:16)(cid:14)(cid:19)(cid:15)(cid:20)(cid:13)(cid:16)(cid:10)(cid:13)(cid:16)(cid:11)(cid:10)(cid:21)(cid:10)(cid:11)(cid:12)(cid:22)(cid:12)(cid:18)(cid:14)(cid:16)(cid:23)(cid:10)(cid:13)(cid:24)(cid:19)(cid:12)(cid:14)(cid:25) (cid:1)(cid:2)(cid:3)(cid:4)(cid:5)(cid:5)(cid:6)(cid:7)(cid:8)(cid:3)(cid:2)(cid:4)(cid:5)(cid:9)(cid:10)(cid:11)(cid:11)(cid:12)(cid:7)(cid:13)(cid:14)(cid:24)(cid:20)(cid:7)(cid:25)(cid:14)(cid:24)(cid:16)(cid:22)(cid:23)(cid:17)(cid:7)(cid:26)(cid:23)(cid:27)(cid:28)(cid:24)(cid:29)(cid:14)(cid:20)(cid:22)(cid:28)(cid:23) HEXFET PRODUCT MARKING THIS IS AN IRFL014 PART NUMBER LOT CODE INTERNATIONAL RECTIFIER FL014 AXXXX LOGO 314P DATE CODE A = ASSEMBLY SITE (YYWW) CODE YY = YEAR TOP WW = WEEK BOTTOM P = DESIGNATES LEAD-FREE PRODUCT (OPTIONAL) Notes: 1.For an Automotive Qualified version of this part please seehttp://www.irf.com/product-info/auto/ 2.For the most current drawing please refer to IR website at http://www.irf.com/package/ www.irf.com 7

IRFL4315PbF (cid:1)(cid:2)(cid:3)(cid:4)(cid:5)(cid:5)(cid:6)(cid:7)(cid:8)(cid:3)(cid:2)(cid:4)(cid:5)(cid:9)(cid:10)(cid:11)(cid:11)(cid:12)(cid:7)(cid:3)(cid:14)(cid:30)(cid:18)(cid:7)(cid:31)(cid:7) (cid:18)(cid:18)(cid:21)(cid:7)(cid:26)(cid:23)(cid:27)(cid:28)(cid:24)(cid:29)(cid:14)(cid:20)(cid:22)(cid:28)(cid:23) (cid:4)(cid:10)(cid:11)(cid:12)(cid:13)(cid:14)(cid:10)(cid:15)(cid:13)(cid:14)(cid:16)(cid:17)(cid:18)(cid:12)(cid:16)(cid:14)(cid:19)(cid:15)(cid:20)(cid:13)(cid:16)(cid:10)(cid:13)(cid:16)(cid:11)(cid:10)(cid:21)(cid:10)(cid:11)(cid:12)(cid:22)(cid:12)(cid:18)(cid:14)(cid:16)(cid:23)(cid:10)(cid:13)(cid:24)(cid:19)(cid:12)(cid:14)(cid:25) 2.05 (.080) 43..1900 ((..116514)) 11..8655 ((..007625)) 00..3255 ((..001130)) TR 1.95 (.077) 7.55 (.297) 7.45 (.294) 16.30 (.641) 7.60 (.299) 15.70 (.619) 7.40 (.292) 1.60 (.062) 1.50 (.059) TYP. FEED DIRECTION 7.10 (.279) 2.30 (.090) 6.90 (.272) 2.10 (.083) 12.10 (.475) 11.90 (.469) NOTES : 1. CONTROLLING DIMENSION: MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541. 3. EACH O330.00 (13.00) REEL CONTAINS 2,500 DEVICES. 13.20 (.519) 15.40 (.607) 12.80 (.504) 11.90 (.469) 4 330.00 50.00 (1.969) (13.000) MIN. MAX. NOTES : 18.40 (.724) 1. OUTLINE COMFORMS TO EIA-418-1. MAX. 2. CONTROLLING DIMENSION: MILLIMETER.. 14.40 (.566) 4 3. DIMENSION MEASURED @ HUB. 12.40 (.488) 4. INCLUDES FLANGE DISTORTION @ OUTER EDGE. 3 (cid:1)(cid:2)(cid:3)(cid:4)(cid:5)(cid:6) (cid:2)(cid:16)Repetitive rating; pulse width limited by (cid:1) When mounted on 1 inch square copper board. max. junction temperature. (cid:5) Coss eff. is a fixed capacitance that gives the same charging time (cid:3) (cid:16)Starting TJ = 25°C, L = 7.8mH as Coss while VDS is rising from 0 to 80% VDSS. RG = 25Ω, IAS = 3.1A. (cid:6)ISD ≤ 1.6A, di/dt ≤ 230A/µs, VDD ≤ V(BR)DSS, (cid:4) Pulse width ≤ 400µs; duty cycle ≤ 2%. T ≤ 150°C. J Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR’s Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.09/2010 8 www.irf.com

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