IRFIZ44NPbF  Advanced Process Technology HEXFET® Power MOSFET  Isolated Package  High Voltage Isolation = 2.5KVRMS    V 55V DSS  Sink to Lead Creepage Dist. = 4.8mm  Fully Avalanche Rated RDS(on) 0.024  Lead-Free I 31A D Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on- resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET S D Power MOSFETs are well known for, provides the designer with G an extremely efficient and reliable device for use in a wide variety TO-220 Full-Pak of applications. G D S The TO-220 Full Pak eliminates the need for additional insulating Gate Drain Source hardware in commercial-industrial applications. The molding compound used provides a high isolation capability and a low thermal resistance between the tab and external heat sink. This isolation is equivalent to using a 100 micron mica barrier with standard TO-220 product. The Fullpak is mounted to a heat sink using a single clip or by a single screw fixing. Standard Pack Base Part Number Package Type Orderable Part Number Form Quantity IRFIZ44NPbF TO-220 Full-Pak Tube 50 IRFIZ44NPbF Absolute Maximum Ratings Symbol Parameter Max. Units I @ T = 25°C Continuous Drain Current, V @ 10V 31 D C GS I @ T = 100°C Continuous Drain Current, V @ 10V 22 A D C GS I Pulsed Drain Current  160 DM P @T = 25°C Maximum Power Dissipation 45 W D C Linear Derating Factor 0.3 W/°C V Gate-to-Source Voltage ± 20 V GS E Single Pulse Avalanche Energy (Thermally Limited)  210 mJ AS I Avalanche Current  25 A AR E Repetitive Avalanche Energy  4.5 mJ AR dv/dt Peak Diode Recovery dv/dt 5.0 V/ns T Operating Junction and -55 to + 175   J T Storage Temperature Range °C  STG Soldering Temperature, for 10 seconds (1.6mm from case) 300   Mounting torque, 6-32 or M3 screw 10 lbf•in (1.1N•m)   Thermal Resistance   Symbol Parameter Typ. Max. Units R Junction-to-Case ––– 3.3 JC °C/W R Junction-to-Ambient ––– 65 JA 1 2017-04-27

  IRFIZ44NPbF Electrical Characteristics @ T = 25°C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 55 ––– ––– V V = 0V, I = 250µA (BR)DSS GS D V /T Breakdown Voltage Temp. Coefficient ––– 0.055 ––– V/°C Reference to 25°C, I = 1mA  (BR)DSS J D R Static Drain-to-Source On-Resistance ––– ––– 0.024  V = 10V, I = 17A DS(on) GS D V Gate Threshold Voltage 2.0 ––– 4.0 V V = V , I = 250µA GS(th) DS GS D gfs Forward Trans conductance 17 ––– ––– S V = 25V, I = 25A DS D ––– ––– 25 V = 55V, V = 0V I Drain-to-Source Leakage Current µA DS GS DSS ––– ––– 250 V = 55V,V = 0V,T =150°C DS GS J Gate-to-Source Forward Leakage ––– ––– 100 V = 20V I nA GS GSS Gate-to-Source Reverse Leakage ––– ––– -100 V = -20V GS Q Total Gate Charge ––– ––– 65 I = 25A g D Q Gate-to-Source Charge ––– ––– 12 nC   V = 44V gs DS Q Gate-to-Drain Charge ––– ––– 27 V = 10V , See Fig. 6 and 13 gd GS t Turn-On Delay Time ––– 7.3 ––– V = 28V d(on) DD t Rise Time ––– 69 ––– I =25A r ns D t Turn-Off Delay Time ––– 47 ––– R = 12 d(off) G t Fall Time ––– 60 ––– R = 1.1See Fig. 10 f D Between lead, L Internal Drain Inductance ––– 4.5 ––– D 6mm (0.25in.) nH   from package L Internal Source Inductance ––– 7.5 ––– S and center of die contact C Input Capacitance ––– 1300 ––– V = 0V iss GS C Output Capacitance ––– 410 ––– V = 25V oss pF   DS C Reverse Transfer Capacitance ––– 150 ––– ƒ = 1.0MHz, See Fig. 5 rss C Drain to Sink Capacitance ––– 12 ––– ƒ = 1.0MHz Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions Continuous Source Current MOSFET symbol I ––– ––– 31 S (Body Diode) showing the A Pulsed Source Current integral reverse I ––– ––– 160 SM (Body Diode) p-n junction diode. V Diode Forward Voltage ––– ––– 1.3 V T = 25°C,I = 17A,V = 0V  SD J S GS t Reverse Recovery Time ––– 65 98 ns T = 25°C ,I = 25A rr J F Q Reverse Recovery Charge ––– 160 240 C di/dt = 100A/µs  rr t Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by L +L ) on S D Notes:  Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11)  starting T = 25°C, L = 470µH, R = 25, I = 25A (See fig. 12) J G AS  I 25A, di/dt 320A/µs, V V , T  175°C. SD DD (BR)DSS J  Pulse width 300µs; duty cycle  2%.  t=60s, ƒ=60Hz  Uses IRFZ44N data and test conditions. 2 2017-04-27

  IRFIZ44NPbF 1000 1000 VGS VGS TOP 15V TOP 15V 10V 10V 8.0V 8.0V 7.0V 7.0V A) 6.0V A) 6.0V ( 5.5V ( 5.5V ent B O T T O M 45..50VV ent B O T T O M 45..50VV urr 100 urr 100 C C e e c c ur ur o o S S o- o- 4.5V n-t 10 4.5V n-t 10 ai ai Dr Dr I , D I , D 20µs PULSE WIDTH 20µs PULSE WIDTH TC = 25°C T C = 175°C 1 A 1 A 0.1 1 10 100 0.1 1 10 100 V , Drain-to-Source Voltage (V) V , Drain-to-Source Voltage (V) DS DS Fig. 1 Typical Output Characteristics Fig. 2 Typical Output Characteristics 1000 2.5 e I D = 41A c n a A) st ( si 2.0 t e n R re TJ = 25°C n ur 100 O C TJ = 175°C ce d) 1.5 e r e c u z ur So ali o - m o-S n-to Nor 1.0 -t 10 ai ( n Dr ai , DrD , S(on) 0.5 I V D S = 25V R D 20µs PULSE WIDTH VG S = 10V 1 0.0 A A 4 5 6 7 8 9 10 -60 -40 -20 0 20 40 60 80 100 120 140 160 180 V , Gate-to-Source Voltage (V) T , Junction Temperature (°C) GS J Fig. 3 Typical Transfer Characteristics Fig. 4 Normalized On-Resistance vs. Temperature 3 2017-04-27

  IRFIZ44NPbF 2500 20 V G S = 0V, f = 1MHz I D = 25A C is s = C g s + C g d , C d s SHORTED V D S = 44V C r s s = C gd V) V D S = 28V 2000 C o s s = C d s + C gd e ( 16 C iss g a pF) olt ( V e 1500 e 12 c c an C oss ur t o ci S a - p o a 1000 -t 8 C e C, Gat Cr ss , S 500 V G 4 FOR TEST CIRCUIT SEE FIGURE 13 0 A 0 A 1 10 100 0 10 20 30 40 50 60 70 V , Drain-to-Source Voltage (V) Q , Total Gate Charge (nC) DS G Fig 5. Typical Capacitance vs. Fig 6. Typical Gate Charge vs. Drain-to-Source Voltage Gate-to-Source Voltage 1000 1000 OPERATION IN THIS AREA LIMITED BY RDS(on) ) A ( nt ) e A Curr 100 ent ( 100 10µs n rr rai TJ = 175°C Cu D se ain 100µs r r e D ev TJ = 25°C , 10 R 10 D 1ms I , D S I T = 25°C 10ms C T = 175°C J Single Pulse 1 VG S = 0V A 1 A 1 10 100 0.5 1.0 1.5 2.0 2.5 3.0 V , Drain-to-Source Voltage (V) V , Source-to-Drain Voltage (V) DS SD Fig. 7 Typical Source-to-Drain Diode Fig 8. Maximum Safe Operating Area Forward Voltage   4 2017-04-27

  IRFIZ44NPbF 35 30 A) 25 ( nt e r 20 r u C n ai 15 r D I , D 10 Fig 10a. Switching Time Test Circuit 5 0 25 50 75 100 125 150 175 T , Case Temperature ( ° C) C Fig 9. Maximum Drain Current vs. Case Temperature Fig 10b. Switching Time Waveforms 10 ) thJC D = 0.50 Z ( 1 e 0.20 s n o 0.10 p s e 0.05 R mal 0.1 0.02 PDM r 0.01 t1 e SINGLE PULSE h (THERMAL RESPONSE) t2 T Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ=PDMx ZthJC + TC 0.01 0.00001 0.0001 0.001 0.01 0.1 1 t , Rectangular Pulse Duration (sec) 1 Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case 5 2017-04-27

  IRFIZ44NPbF 500 ) ID J m TOP 10A y ( 18A g BOTTOM 25A r 400 e 15V n E e h c n 300 L DRIVER a VDS al v A e RG D.U.T +- VDD Puls 200 IAS A e 20V gl tp 0.01 n Si 100 , Fig 12a. Unclamped Inductive Test Circuit AS E VD D = 25V 0 A 25 50 75 100 125 150 175 Starting T , Junction Temperature (°C) V(BR)DSS J tp Fig 12c. Maximum Avalanche Energy vs. Drain Current I AS Fig 12b. Unclamped Inductive Waveforms Fig 13a. Gate Charge Waveform Fig 13b. Gate Charge Test Circuit   6 2017-04-27

  IRFIZ44NPbF Fig 14. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs   7 2017-04-27

  IRFIZ44NPbF TO-220 Full-Pak Package Outline (Dimensions are shown in millimeters (inches)) TO-220 Full-Pak Part Marking Information TO-220AB Full-Pak packages are not recommended for Surface Mount Application. Note: For the most current drawing please refer to website at http://www.irf.com/package/   8 2017-04-27

  IRFIZ44NPbF Qualification Information  Industrial Qualification Level   (per JEDEC JESD47F) † Moisture Sensitivity Level   TO-220 Full-Pak N/A RoHS Compliant Yes † Applicable version of JEDEC standard at the time of product release. Revision History Date Comments  Changed datasheet with Infineon logo - all pages. 04/27/2017  Corrected Package Outline on page 8.  Added disclaimer on last page. Trademarks of Infineon Technologies AG µHVIC™, µIPM™, µPFC™, AU-ConvertIR™, AURIX™, C166™, CanPAK™, CIPOS™, CIPURSE™, CoolDP™, CoolGaN™, COOLiR™, CoolMOS™, CoolSET™, CoolSiC™, DAVE™, DI-POL™, DirectFET™, DrBlade™, EasyPIM™, EconoBRIDGE™, EconoDUAL™, EconoPACK™, EconoPIM™, EiceDRIVER™, eupec™, FCOS™, GaNpowIR™, HEXFET™, HITFET™, HybridPACK™, iMOTION™, IRAM™, ISOFACE™, IsoPACK™, LEDrivIR™, LITIX™, MIPAQ™, ModSTACK™, my-d™, NovalithIC™, OPTIGA™, OptiMOS™, ORIGA™, PowIRaudio™, PowIRStage™, PrimePACK™, PrimeSTACK™, PROFET™, PRO-SIL™, RASIC™, REAL3™, SmartLEWIS™, SOLID FLASH™, SPOC™, StrongIRFET™, SupIRBuck™, TEMPFET™, TRENCHSTOP™, TriCore™, UHVIC™, XHP™, XMC™ Trademarks updated November 2015 Other Trademarks All referenced product or service names and trademarks are the property of their respective owners. Edition 2016-04-19 IMPORTANT NOTICE For further information on the product, technology, The information given in this document shall in no Published by event be regarded as a guarantee of conditions or delivery terms and conditions and prices please contact your nearest Infineon Technologies office Infineon Technologies AG characteristics (“Beschaffenheitsgarantie”) . (www.infineon.com). 81726 Munich, Germany With respect to any examples, hints or any typical values stated herein and/or any information Please note that this product is not qualified © 2016 Infineon Technologies AG. regarding the application of the product, Infineon according to the AEC Q100 or AEC Q101 documents All Rights Reserved. Technologies hereby disclaims any and all of the Automotive Electronics Council. warranties and liabilities of any kind, including without limitation warranties of non-infringement Do you have a question about this of intellectual property rights of any third party. WARNINGS document? Due to technical requirements products may Email: erratum@infineon.com In addition, any information given in this contain dangerous substances. For information on document is subject to customer’s compliance the types in question please contact your nearest with its obligations stated in this document and Infineon Technologies office. any applicable legal requirements, norms and Document reference standards concerning customer’s products and Except as otherwise explicitly approved by Infineon ifx1 any use of the product of Infineon Technologies in Technologies in a written document signed by customer’s applications. authorized representatives of Infineon Technologies, Infineon Technologies’ products The data contained in this document is exclusively may not be used in any applications where a intended for technically trained staff. It is the failure of the product or any consequences of the responsibility of customer’s technical use thereof can reasonably be expected to result in departments to evaluate the suitability of the personal injury. product for the intended application and the completeness of the product information given in this document with respect to such application.   9 2017-04-27

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