FastIRFET™ IRFH4234PbF HEXFET® Power MOSFET V 25 V     DSS R max DS(on) 4.6 (@ VGS = 10V) m (@ V = 4.5V) 7.3 GS Qg 8.2 nC (typical) I D 60 A PQFN 5X6 mm (@T = 25°C) C (Bottom) Applications Control MOSFET for Sync Buck Converters Secondary Synchronous Rectifier MOSFET for isolated DC-DC converters Features Benefits Low Charge (typical 8.2 nC) Low Switching Losses Low R (<4.6 m) Lower Conduction Losses DSon Low Thermal Resistance to PCB (<4.6 °C/W) Enable better Thermal Dissipation Low Profile (<0.9 mm) results in Increased Power Density Industry-Standard Pinout  Multi-Vendor Compatibility Compatible with Existing Surface Mount Techniques E a sier Manufacturing RoHS Compliant, Halogen-Free Environmentally Friendlier MSL1, Industrial Qualification Increased Reliability Base part number Package Type Standard Pack Orderable Part Number     Form Quantity IRFH4234PbF PQFN 5mm x 6 mm Tape and Reel 4000 IRFH4234TRPbF Absolute Maximum Ratings     Parameter Max. Units V Gate-to-Source Voltage ± 20 V GS I @ T = 25°C Continuous Drain Current, V @ 10V 22 D A GS I @ T = 25°C Continuous Drain Current, V @ 10V 60 D C(Bottom) GS A I @ T = 100°C Continuous Drain Current, V @ 10V 38 D C(Bottom) GS I Pulsed Drain Current  240 DM P @T = 25°C Power Dissipation  3.5 D A W P @T = 25°C Power Dissipation  27 D C(Bottom) Linear Derating Factor  0.028 W/°C T Operating Junction and -55 to + 150 J °C T Storage Temperature Range STG Notes  through  are on page 9 1 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback March 16, 2015

  IRFH4234PbF Static @ T = 25°C (unless otherwise specified)         J Parameter Min. Typ. Max. Units Conditions BV Drain-to-Source Breakdown Voltage 25 ––– ––– V V = 0V, I = 250µA DSS GS D BV /T Breakdown Voltage Temp. Coefficient ––– 20 ––– mV/°C Reference to 25°C, I = 1mA DSS J D R Static Drain-to-Source On-Resistance ––– 3.5 4.6 V = 10V, I = 30A  DS(on) GS D m ––– 5.6 7.3 V = 4.5V, I = 30A  GS D V Gate Threshold Voltage 1.1 1.6 2.1 V V = V , I = 25µA GS(th) DS GS D V Gate Threshold Voltage Coefficient ––– -5.6 ––– mV/°C GS(th) I Drain-to-Source Leakage Current ––– ––– 1.0 µA V = 20V, V = 0V DSS DS GS I Gate-to-Source Forward Leakage ––– ––– 100 V = 20V GSS nA GS Gate-to-Source Reverse Leakage ––– ––– -100 V = -20V GS gfs Forward Transconductance 60 ––– ––– S V = 5.0V, I = 30A DS D Q Total Gate Charge ––– 17 ––– nC V = 10V, V = 13V, I = 30A g GS DS D Q Total Gate Charge ––– 8.2 12.3 g Q Pre-Vth Gate-to-Source Charge ––– 1.6 –––   V = 13V gs1 DS Q Post-Vth Gate-to-Source Charge ––– 1.6 ––– nC V = 4.5V gs2 GS Q Gate-to-Drain Charge ––– 3.1 –––   I = 30A gd D Q Gate Charge Overdrive ––– 1.9 –––   godr Q Switch Charge (Q + Q ) ––– 4.7 –––   sw gs2 gd Q Output Charge ––– 7.7 ––– nC V = 16V, V = 0V oss DS GS RG Gate Resistance ––– 1.8 –––   t Turn-On Delay Time ––– 7.8 ––– V = 13V, V = 4.5V d(on) DD GS t Rise Time ––– 30 ––– ns I = 30A r D t Turn-Off Delay Time ––– 8.0 –––   R =1.8 d(off) G t Fall Time ––– 5.3 –––   f C Input Capacitance ––– 1011 ––– V = 0V iss GS C Output Capacitance ––– 286 ––– pF V = 13V oss DS C Reverse Transfer Capacitance ––– 83 –––   ƒ = 1.0MHz rss Avalanche Characteristics         Parameter Typ. Max. E Single Pulse Avalanche Energy  ––– 42 AS I Avalanche Current  ––– 30 AR Diode Characteristics         Parameter Min. Typ. Max. Units Conditions I Continuous Source Current MOSFET symbol S ––– ––– 60 D (Body Diode) showing the A I Pulsed Source Current integral reverse G SM ––– ––– 240 (Body Diode)  p-n junction diode. S V Diode Forward Voltage ––– ––– 1.0 V T = 25°C, I = 30A, V = 0V  SD J S GS t Reverse Recovery Time ––– 10 15 ns T = 25°C, I = 30A, V = 13V rr J F DD Q Reverse Recovery Charge ––– 11 17 nC di/dt = 200A/µs  rr Thermal Resistance       Parameter Typ. Max. Units R (Bottom) Junction-to-Case  ––– 4.6 JC R (Top) Junction-to-Case  ––– 24 °C/W JC R Junction-to-Ambient  ––– 36 JA R (<10s) Junction-to-Ambient  ––– 24 JA 2 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback March 16, 2015

  IRFH4234PbF 1000 1000 VGS VGS TOP 10V TOP 10V 5.0V 5.0V A) 4.5V A) 4.5V n(t 100 43..05VV (nt 43..05VV erur 33..02V5V erur100 33..02V5V C e BOTTOM 2.75V C e BOTTOM 2.75V ucr 10 ucr o o S S o- o- tn- -tn 10 ai ai rD 1 2.75V rD I, D 60µs PULSE WIDTH I, D 2.75V 60µs PULSE WIDTH Tj = 150°C Tj = 25°C 0.1 1 0.1 1 10 100 0.1 1 10 100 VDS, Drain-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V) Fig 2. Typical Output Characteristics Fig 1. Typical Output Characteristics 1000 2.0 e ID = 30A c an 1.8 VGS = 10V A)(nt sitRes 1.6 erur 100 On C ce e ucr d)ze1.4 ourSo--tanriDI, D 10 TJ = 150°C TJ = 2V56°DC0Sµ s= P1U0VLSE WIDTH oSo--tDanri, Rn) oS(DalimorN ( 011...802 1.0 0.6 1.0 2.0 3.0 4.0 5.0 6.0 7.0 -60 -40 -20 0 20 40 60 80 100120140160 VGS, Gate-to-Source Voltage (V) TJ , Junction Temperature (°C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance vs. Temperature 100000 14.0 VGS = 0V, f = 1 MHZ ID= 30A Ciss = Cgs + Cgd, Cds SHORTED 12.0 Crss = Cgd V) 10000 Coss = Cds + Cgd e( F)cep( an 1000 Ciss gVoa ltucer 108..00 VVVDDDSSS=== 521.030VVV citpa Coss Soo- 6.0 aC te- C, Crss atG 4.0 100 , S G V 2.0 10 0.0 1 10 100 0 2 4 6 8 10 12 14 16 18 VDS, Drain-to-Source Voltage (V) QG, Total Gate Charge (nC) Fig 5. Typical Capacitance vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage 3 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback March 16, 2015

  IRFH4234PbF 1000 1000 OPERATION IN THIS AREA LIMITED BY RDS(on) )A A) 100 n(t eurrC 100 TJ = 150°C (t enrrCu 10 100µsec anri D 10 e oucr se TJ = 25°C So- 1 1msec ever n-tai 10msec R, DS 1 D r, D 0.1 Tc = 25°C DC I I VGS = 0V Tj = 150°C Single Pulse 0.1 0.01 0.4 0.6 0.8 1.0 1.2 1.4 0.1 1 10 100 VSD, Source-to-Drain Voltage (V) VDS, Drain-to-Source Voltage (V) Fig 8. Maximum Safe Operating Area Fig 7. Typical Source-Drain Diode Forward Voltage 60 2.8 50 )V e( 2.4 g a A)( nt 40 oltVd 2.0 e ol rrCu 30 esh ID = 25µA n rh iDaI,rD 20 aet tG, h) 1.6 IIIDDD === 121.5000mmµAAA S(t 1.2 10 G V 0 0.8 25 50 75 100 125 150 -75 -50 -25 0 25 50 75 100 125 150 TC , Case Temperature (°C) TJ , Temperature ( °C ) Fig 9. Maximum Drain Current vs. Case Temperature Fig 10. Drain-to–Source Breakdown Voltage 10 W D = 0.50 /C °) C 1 0.20 J 0.10 h Zt 0.05 ( e 0.1 0.02 s n o 0.01 p s e R al m 0.01 er SINGLE PULSE Notes: hT ( THERMAL RESPONSE ) 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.001 1E-006 1E-005 0.0001 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case 4 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback March 16, 2015

  IRFH4234PbF ) 12.0 200 m ID = 30A J) ID ( anceessitR 10.0 mgyr( Ene e 160 TBOOPTT O M 13620.8AAA On 8.0 nch 120 ce aal ru vA So- o 6.0 TJ = 125°C sel u 80 ni-tDa, ron) 4.0 TJ = 25°C Pel Sngi ,S 40 S( EA RD 2.0 0 2 4 6 8 10 12 14 16 18 20 25 50 75 100 125 150 V Gate -to -Source Voltage (V) Starting TJ , Junction Temperature (°C) GS, Fig 12. On– Resistance vs. Gate Voltage Fig 13. Maximum Avalanche Energy vs. Drain Current 1000 Duty Cycle = Single Pulse 100 Allowed avalanche Current vs avalanche A) pulsewidth, tav, assuming Tj = 125°C and ( tn Tstart =25°C (Single Pulse) e rru C 10 e h c an Allowed avalanche Current vs avalanche alv pulsewidth, tav, assuming j = 25°C and A 1 Tstart = 125°C. 0.1 1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01 1.0E+00 1.0E+01 1.0E+02 1.0E+03 tav (sec) Fig 14. Typical Avalanche Current vs. Pulsewidth 5 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback March 16, 2015

  IRFH4234PbF Fig 15. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs V(BR)DSS 15V tp VDS L DRIVER RG D.U.T + - VDD IAS A 20V tp 0.01 IAS Fig 16a. Unclamped Inductive Test Circuit Fig 16b. Unclamped Inductive Waveforms Fig 17a. Switching Time Test Circuit Fig 17b. Switching Time Waveforms Id Vds Vgs VDD  Vgs(th) Qgs1 Qgs2 Qgd Qgodr Fig 18. Gate Charge Test Circuit Fig 19. Gate Charge Waveform 6 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback March 16, 2015

  IRFH4234PbF PQFN 5x6 Outline "B" Package Details For more information on board mounting, including footprint and stencil recommendation, please refer to application note AN-1136: http://www.irf.com/technical-info/appnotes/an-1136.pdf For more information on package inspection techniques, please refer to application note AN-1154: http://www.irf.com/technical-info/appnotes/an-1154.pdf PQFN 5x6 Part Marking INTERNATIONAL RECTIFIER LOGO DATE CODE XXXX PART NUMBER ASSEMBLY (“4 or 5 digits”) XYWWX SITE CODE MARKING CODE (Per SCOP 200-002) (Per Marking Spec) XXXXX PIN 1 IDENTIFIER LOT CODE (Eng Mode - Min last 4 digits of EATI#) (Prod Mode - 4 digits of SPN code) Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 7 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback March 16, 2015

  IRFH4234PbF PQFN 5x6 Tape and Reel REEL DIMENSIONS TAPE DIMENSIONS CODE DESCRIPTION Ao Dimension design to accommodate the component width Bo Dimension design to accommodate the component lenght Ko Dimension design to accommodate the component thickness W Overall width of the carrier tape P1 Pitch between successive cavity centers QUADRANT ASSIGNMENTS FOR PIN 1 ORIENTATION IN TAPE Note: All dimension are nominal Package Reel QTY Reel Ao Bo Ko P1 W Pin 1 Type Diameter Width (mm) (mm) (mm) (mm) (mm) Quadrant (Inch) W1 (mm) 5 X 6 PQFN 13 4000 12.4 6.300 5.300 1.20 8.00 12 Q1 Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 8 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback March 16, 2015

  IRFH4234PbF Qualification Information†   Industrial† Qualification Level   (per JEDEC JESD47F†† guidelines) MSL1 Moisture Sensitivity Level PQFN 5mm x 6mm (per JEDEC J-STD-020D††) RoHS Compliant Yes † Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability †† Applicable version of JEDEC standard at the time of product release. Notes:  Repetitive rating; pulse width limited by max. junction temperature.  Starting T = 25°C, L = 0.093mH, R = 50, I = 30A. J G AS  Pulse width  400 µs; duty cycle  2%.  R is measured at T of approximately 90°C.  J  When mounted on 1 inch square PCB (FR-4). Please refer to AN-994 for more details: http://www.irf.com/technical-info/appnotes/an-994.pdf Revision History Date Comments 1/23/2013  Updated Rg typical from TBD to 1.8 .  Remove note 6, on page 8.  Remove reference to note 6 on maximum current rating, on page 1. 5/15/2013  Updated package 3D drawing, on page 1.  Updated IS rating from 30 A to 60 A, on page 2.  Updated package outline drawing, on page 7. 8/15/2013  Added “FastIRFET™” above the part number, on page 1. 3/16/2015  Updated package outline and tape and reel on pages 7 and 8. IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA To contact International Rectifier, please visit http://www.irf.com/whoto-call/ 9 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback March 16, 2015