IRFD9010, SiHFD9010 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • For Automatic Insertion V (V) - 50 • Compact, End Stackable DS • Fast Switching RDS(on) (Ω) VGS = - 10 V 0.50 • Low Drive Current Q (Max.) (nC) 11 g • Easy Paralleled Qgs (nC) 3.8 • Excellent Temperature Stability Qgd (nC) 4.1 • P-Channel Versatility Configuration Single • Compliant to RoHS Directive 2002/95/EC DESCRIPTION The HVMDIP technology is the key to Vishay’s advanced line of power MOSFET transistors. The efficient geometry S and unique processing of the HVMDIP design achieves very low on-state resistance combined with high HVMDIP transconductance and extreme device ruggedness. The p-channel HVMDIPs are designed for application which G require the convenience of reverse polarity operation. They retain all of the features of the more common n-channel HVMDIPs such as voltage control, very fast switching, ease S of paralleling, and excellent temperature stability. G P-channels HVMDIPs are intended for use in power stages D D where complementary symmetry with n-channel devices offers circuit simplification. They are also very useful in drive P-Channel MOSFET stages because of the circuit versatility offered by the reverse polarity connection. Applications include motor control, audio amplifiers, switched mode converters, control circuits and pulse amplifiers. ORDERING INFORMATION Package HVMDIP IRFD9010PbF Lead (Pb)-free SiHFD9010-E3 IRFD9010 SnPb SiHFD9010 ABSOLUTE MAXIMUM RATINGS (T = 25 °C, unless otherwise noted) C PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V - 50 DS V Gate-Source Voltage V ± 20 GS T = 25 °C - 1.1 C Continuous Drain Current V at - 10 V I GS D T = 100 °C - 0.68 A C Pulsed Drain Currenta I - 8.8 DM Linear Derating Factor 0.01 W/°C Inductive Current, Clamped L = 100 µH see fig. 14 I - 8.8 LM A Inductive Current, Unclamped (Avalanche Current) see fig. 15 I - 1.5 L Maximum Power Dissipation T = 25 °C P 1 W C D Operating Junction and Storage Temperature Range T , T - 55 to + 150 J stg °C Soldering Recommendations (Peak Temperature) for 10 s 300d Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. VDD = - 25 V, starting TJ = 25 °C, L = 52 mH, Rg = 25 Ω, IAS = - 2.0 A (see fig. 12). c. ISD ≤ - 4.0 A, dI/dt ≤ 75 A/μs, VDD ≤ VDS, TJ ≤ 175 °C. d. 1.6 mm from case. * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 91405 www.vishay.com S10-0998-Rev. A, 26-Apr-10 1

IRFD9010, SiHFD9010 Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYP. MAX. UNIT Maximum Junction-to-Ambient R - 120 °C/W thJA SPECIFICATIONS (T = 25 °C, unless otherwise noted) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage V V = 0 V, I = - 250 μA - 50 - - V DS GS D VDS Temperature Coefficient ΔVDS/TJ Reference to 25 °C, ID = - 1 mA - - 0.091 - V/°C Gate-Source Threshold Voltage V V = V , I = - 250 μA - 2.0 - - 4.0 V GS(th) DS GS D Gate-Source Leakage I V = ± 20 V - - ± 500 nA GSS GS V = - 50 V, V = 0 V - - - 250 DS GS Zero Gate Voltage Drain Current I μA DSS V = - 40 V, V = 0 V, T = 125 °C - - - 1000 DS GS J On-State Drain Current I V = 10 V V > I x R max. - 1.1 - - A D(on) GS DS D(on) DS(on) Drain-Source On-State Resistance RDS(on) VGS = - 10 V ID = - 0.58 Ab - 0.35 0.50 Ω Forward Transconductance g V = - 20 V, I = - 2.4 A 1.7 2.5 - S fs DS D Dynamic Input Capacitance C - 240 - iss V = 0 V, GS Output Capacitance C V = - 25 V, - 160 - pF oss DS f = 1.0 MHz, see fig. 5 Reverse Transfer Capacitance C - 30 - rss Total Gate Charge Q - 7.2 11 g I = - 4.7 A, V = 0.8 V Gate-Source Charge Q V = - 10 V D DS - 2.5 3.8 nC gs GS see fig. 6 and 13b Gate-Drain Charge Q - 2.7 4.1 gd Turn-On Delay Time t - 6.1 9.2 d(on) Rise Time tr VDD = - 25 V, ID = - 4.7 A - 47 71 Rg = 24 Ω, RD = 5.6 Ω, ns Turn-Off Delay Time td(off) see fig. 10b - 13 20 Fall Time t - 39 59 f Internal Drain Inductance L Between lead, D - 4.0 - D 6 mm (0.25") from nH package and center of G Internal Source Inductance L - 6.0 - S die contact S Drain-Source Body Diode Characteristics MOSFET symbol Continuous Source-Drain Diode Current IS D - - - 1.1 A showing the integral reverse G Pulsed Diode Forward Currenta I - - - 8.8 SM p - n junction diode S Body Diode Voltage V T = 25 °C, I = - 0.7 A, V = 0 Vb - - - 5.5 V SD J S GS Body Diode Reverse Recovery Time t 33 75 160 ns rr T = 25 °C, I = - 4.7 A, dI/dt = 100 A/μsb J F Body Diode Reverse Recovery Charge Q 0.090 0.22 0.52 μC rr Forward Turn-On Time t Intrinsic turn-on time is negligible (turn-on is dominated by L and L ) on S D Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width ≤ 300 μs; duty cycle ≤ 2 %. www.vishay.com Document Number: 91405 2 S10-0998-Rev. A, 26-Apr-10

IRFD9010, SiHFD9010 Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 10 e 3.0 - 10 V 80 μs Pulse Width - 8 V stanc ID = - 4.7 V 8 si 2.4 A) Re Current ( 6 - 7 V urce on alized) 1.8 n Som - I, DraiD 42 VGS = -- 65 VV Drain-to-(Nor 10..26 - 4 V , S(on) VGS = - 10 V D 0 R 0 0 5 10 15 20 25 - 60- 40- 20 0 20 40 60 80 100120140160 - V , Drain-to-Source Voltage (V) T , Junction Temperature (°C) GS J Fig. 1 - Typical Output Characteristics Fig. 4 - Normalized On-Resistance vs. Temperature 10 500 80 μs Pulse Width V = 0 V, f = 1 MHz GS - 10 V C = C + C , C Shorted iss gs gd ds C = C 8 400 rss gd A) - 8 V Coss = Cds + Cgd nt ( pF) urre 6 - 7 V ce ( 300 Ciss C n Drain 4 V = - 6 V pacita 200 , D GS Ca Coss - I 2 100 - 5 V C rss - 4 V 0 0 0 1 2 3 4 5 1 10 100 - V , Drain-to-Source Voltage (V) - V , Drain-to-Source Voltage (V) GS GS Fig. 2 - Typical Output Characteristics Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage 10 20 8V0D Sμ =s P2 uxl sVeG WSidth e (V) ID = - 4.7 A g 16 urrent (A) 1 urce Volta 12 VDS = - 40 V C 0.1 T = 150 °C o n J S ai o- 8 Dr -t , D TJ = 25 °C ate - I 0.01 , GS 4 VG For Test Circuit - See Figure 13 0.001 0 0 3 4 6 8 10 0 3 6 9 12 15 - V , Drain-to-Source Voltage (V) Q , Total Gate Charge (nC) GS g Fig. 3 - Typical Transfer Characteristics Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage Document Number: 91405 www.vishay.com S10-0998-Rev. A, 26-Apr-10 3

IRFD9010, SiHFD9010 Vishay Siliconix 100 2.0 A) ent ( A) 1.6 everse Drain Curr 101 TTJ J= = 1 2550 °°CC , Drain Current (D 10..28 , RD - I 0.4 S - I 0.1 0 0 1 2 3 4 5 25 50 75 100 125 150 - VSD, Source-to-Drain Voltage (V) TC, Case Temperature (°C) Fig. 7 - Typical Source-Drain Diode Forward Voltage Fig. 9 - Maximum Drain Current vs. Case Temperature 100 Operation in this Area Limited RD by RDS(on) VDS A) 10 10 μs VGS ent ( 100 μs Rg D.U.T. - urr 1 ms +VDD C 1 n - 10 V ai 10 ms Dr Pulse width ≤ 1 µs , D 100 ms Duty factor ≤ 0.1 % - I 0.1 T = 25 °C 1 s C Fig. 10a - Switching Time Test Circuit T = 150 °C J DC Single Pulse 0.01 1 10 100 - VDS, Drain-to-Source Voltage (V) td(on) tr td(off) tf V GS Fig. 8 - Maximum Safe Operating Area 10 % 90 % V DS Fig. 10b - Switching Time Waveforms www.vishay.com Document Number: 91405 4 S10-0998-Rev. A, 26-Apr-10

IRFD9010, SiHFD9010 Vishay Siliconix 1000 )C J Dth 100 0.5 Z e ( 0.2 s n 0.1 o sp 10 0.05 PDM e R 0.02 al t1 m t er 1 0.01 Notes: 2 h T Single Pulse 1. Duty Factor, D = t1/t2 2. Peak T = P x T + T (Thermal Response) J DM thJC C 0.1 0.00001 0.0001 0.001 0.01 0.1 1 10 100 t , Rectangular Pulse Duration (s) 1 Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case L VDS QG Vary tp to obtain - 10 V required IAS Rg D.U.T - QGS QGD +VDD I AS V - 10 V G tp 0.01 W Charge Fig. 12a - Unclamped Inductive Test Circuit Fig. 13a - Basic Gate Charge Waveform Current regulator Same type as D.U.T. I AS 50 kΩ 12 V 0.2 µF 0.3 µF V DS - V D.U.T. + DS V DD tp VGS - 3 mA V DS I I G D Current sampling resistors Fig. 12b - Unclamped Inductive Waveforms Fig. 13b - Gate Charge Test Circuit Document Number: 91405 www.vishay.com S10-0998-Rev. A, 26-Apr-10 5

IRFD9010, SiHFD9010 Vishay Siliconix Peak Diode Recovery dV/dt Test Circuit D.U.T. + Circuit layout considerations • Low stray inductance • Ground plane • Low leakage inductance current transformer - + - + - Rg • dV/dt controlled by RG + • ISD controlled by duty factor "D" - VDD • D.U.T. - device under test Compliment N-Channel of D.U.T. for driver Driver gate drive P.W. Period D = P.W. Period V = - 10 V* GS D.U.T. I waveform SD Reverse recovery Body diode forward current current dI/dt D.U.T. V waveform DS Diode recovery dV/dt V DD Re-applied voltage Body diode forward drop Inductor current Ripple ≤5 % ISD * V = - 5 V for logic level and - 3 V drive devices GS Fig. 14 - For P-Channel Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91405. www.vishay.com Document Number: 91405 6 S10-0998-Rev. A, 26-Apr-10

Legal Disclaimer Notice www.vishay.com Vishay Disclaimer  ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. © 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED Revision: 08-Feb-17 1 Document Number: 91000

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