IRFD110, SiHFD110 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Dynamic dV/dt Rating V (V) 100 DS • Repetitive Avalanche Rated Available RDS(on) () VGS = 10 V 0.54 RoHS* • For Automatic Insertion Qg (Max.) (nC) 8.3 COMPLIANT Q (nC) 2.3 • End Stackable gs Q (nC) 3.8 • 175 °C Operating Temperature gd Configuration Single • Fast Switching and Ease of Paralleling • Compliant to RoHS Directive 2002/95/EC D HVMDIP DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, G ruggedized device design, low on-resistance and cost-effectiveness. S G The 4 pin DIP package is a low cost machine-insertable D S case style which can be stacked in multiple combinations on standard 0.1" pin centers. The dual drain serves as a thermal N-Channel MOSFET link to the mounting surface for power dissipation levels up to 1 W. ORDERING INFORMATION Package HVMDIP IRFD110PbF Lead (Pb)-free SiHFD110-E3 IRFD110 SnPb SiHFD110 ABSOLUTE MAXIMUM RATINGS (T = 25 °C, unless otherwise noted) A PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V 100 DS V Gate-Source Voltage V ± 20 GS T = 25 °C 1.0 A Continuous Drain Current V at 10 V I GS D T = 100 °C 0.71 A A Pulsed Drain Currenta I 8.0 DM Linear Derating Factor 0.0083 W/°C Single Pulse Avalanche Energyb E 140 mJ AS Repetitive Avalanche Currenta I 1.0 A AR Repetitive Avalanche Energya E 0.13 mJ AR Maximum Power Dissipation T = 25 °C P 1.3 W A D Peak Diode Recovery dV/dtc dV/dt 5.5 V/ns Operating Junction and Storage Temperature Range T , T - 55 to + 175 J stg °C Soldering Recommendations (Peak Temperature) for 10 s 300d Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. VDD = 25 V, starting TJ = 25 °C, L = 52 mH, Rg = 25 , IAS = 2.0 A (see fig. 12). c. ISD  5.6 A, dI/dt  75 A/μs, VDD  VDS, TJ  175 °C. d. 1.6 mm from case. * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 91127 www.vishay.com S10-2466-Rev. C, 25-Oct-10 1

IRFD110, SiHFD110 Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYP. MAX. UNIT Maximum Junction-to-Ambient R - 120 °C/W thJA SPECIFICATIONS (T = 25 °C, unless otherwise noted) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage V V = 0 V, I = 250 μA 100 - - V DS GS D VDS Temperature Coefficient VDS/TJ Reference to 25 °C, ID = 1 mA - 0.12 - V/°C Gate-Source Threshold Voltage V V = V , I = 250 μA 2.0 - 4.0 V GS(th) DS GS D Gate-Source Leakage I V = ± 20 V - - ± 100 nA GSS GS V = 100 V, V = 0 V - - 25 DS GS Zero Gate Voltage Drain Current I μA DSS V = 80 V, V = 0 V, T = 150 °C - - 250 DS GS J Drain-Source On-State Resistance RDS(on) VGS = 10 V ID = 0.60 Ab - - 0.54  Forward Transconductance g V = 50 V, I = 0.60 Ab 0.80 - - S fs DS D Dynamic Input Capacitance C - 180 - iss V = 0 V, GS Output Capacitance C V = 25 V, - 81 - pF oss DS f = 1.0 MHz, see fig. 5 Reverse Transfer Capacitance C - 15 - rss Total Gate Charge Q - - 8.3 g I = 5.6 A, V = 80 V, Gate-Source Charge Q V = 10 V D DS - - 2.3 nC gs GS see fig. 6 and 13b Gate-Drain Charge Q - - 3.8 gd Turn-On Delay Time t - 6.9 - d(on) Rise Time t - 16 - r VDD = 50 V, ID = 5.6 A, ns Turn-Off Delay Time td(off) Rg = 24 , RD = 8.4 , see fig. 10b - 15 - Fall Time t - 9.4 - f Between lead, Internal Drain Inductance L D - 4.0 - D 6 mm (0.25") from package and center of nH G Internal Source Inductance L die contact - 6.0 - S S Drain-Source Body Diode Characteristics MOSFET symbol Continuous Source-Drain Diode Current IS showing the D - - 1.0 integral reverse A G Pulsed Diode Forward Currenta I p - n junction diode - - 8.0 SM S Body Diode Voltage V T = 25 °C, I = 1.0 A, V = 0 Vb - - 2.5 V SD J S GS Body Diode Reverse Recovery Time t - 100 200 ns rr T = 25 °C, I = 5.6 A, dI/dt = 100 A/μsb J F Body Diode Reverse Recovery Charge Q - 0.44 0.88 μC rr Forward Turn-On Time t Intrinsic turn-on time is negligible (turn-on is dominated by L and L ) on S D Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width  300 μs; duty cycle  2 %. www.vishay.com Document Number: 91127 2 S10-2466-Rev. C, 25-Oct-10

IRFD110, SiHFD110 Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) V GS 101 Top 15 V 101 10 V 25 °C 8.0 V Current (A) Bottom 76554.....00505 VVVVV Current (A) 100 175 °C Drain 100 Drain I, D 4.5 V I, D 20 µs Pulse Width 20 µs Pulse Width TA = 25 °C 10-1 VDS = 50 V 10-1 100 101 4 5 6 7 8 9 10 91127_01 VDS, Drain-to-Source Voltage (V) 91127_03 VGS, Gate-to-Source Voltage (V) Fig. 1 - Typical Output Characteristics, T = 25 °C Fig. 3 - Typical Transfer Characteristics A 101 Top 1V5G VS nce 3.0 ID = 5.6 A a V = 10 V n Current (A) 100 Bottom 18765540......000505 V VVVVVV 4.5 V ource On Resistmalized) 122...505 GS , DraiD n-to-S(Nor 1.0 I ai Dr 20 µs Pulse Width , n) 0.5 TA = 175 °C S(o D 0.0 10-1 100 101 R - 60- 40- 20 0 20 40 60 80 100120140160180 91127_02 VDS, Drain-to-Source Voltage (V) 91127_04 TJ, Junction Temperature (°C) Fig. 2 - Typical Output Characteristics, T = 175 °C Fig. 4 - Normalized On-Resistance vs. Temperature A Document Number: 91127 www.vishay.com S10-2466-Rev. C, 25-Oct-10 3

IRFD110, SiHFD110 Vishay Siliconix 400 VGS = 0 V, f = 1 MHz Ciss = Cgs + Cgd, Cds Shorted A) 320 CCrss == CCgd + C nt ( 175 °C oss ds gd e nce (pF) 240 Ciss ain Curr 100 25 °C apacita 160 Coss erse Dr C v e R 80 , D 10-1 Crss IS V = 0 V GS 0 100 101 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 91127_05 VDS, Drain-to-Source Voltage (V) 91127_07 VSD, Source-to-Drain Voltage (V) Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage Fig. 7 - Typical Source-Drain Diode Forward Voltage 20 102 V) ID = 5.6 A 5 Operationb iyn Rthis area limited ge ( 16 VDS = 80 V DS(on) e Volta 12 VDS = 2V0D VS = 50 V ent (A) 102 10 µs urc urr 5 100 µs o C e-to-S 8 Drain 21 1 ms , GatS 4 I, D 5 T = 25 °C 10 ms G A V For test circuit 2 TJ = 175 °C see figure 13 Single Pulse 0 0.1 0 2 4 6 8 10 0.1 2 5 1 2 5 10 2 5 102 2 5 103 91127_06 QG, Total Gate Charge (nC) 91127_08 VDS, Drain-to-Source Voltage (V) Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage Fig. 8 - Maximum Safe Operating Area www.vishay.com Document Number: 91127 4 S10-2466-Rev. C, 25-Oct-10

IRFD110, SiHFD110 Vishay Siliconix R D V DS 1.0 VGS D.U.T. R g + 0.8 -VDD A) ent ( 0.6 Pul1se0 wVidth ≤ 1 µs urr Duty factor ≤ 0.1 % C n ai 0.4 Fig. 10a - Switching Time Test Circuit Dr , D I 0.2 V DS 90 % 0.0 25 50 75 100 125 150 175 91127_09 TA, Ambient Temperature (°C) 10 % V GS t t t t d(on) r d(off) f Fig. 9 - Maximum Drain Current vs. Ambient Temperature Fig. 10b - Switching Time Waveforms 103 )hJA 102 0 - 0.5 Zt e ( 0.2 s 10 0.1 n o 0.05 esp 0.02 PDM R 1 0.01 mal t1 Ther 0.1 S(Tinhgelrem Paul lRseesponse) Notes: t2 1. Duty Factor, D = t/t 1 2 2. Peak T = P x Z + T j DM thJC C 10-2 10-5 10-4 10-3 10-2 0.1 1 10 102 103 91127_11 t1, Rectangular Pulse Duration (s) Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Ambient Document Number: 91127 www.vishay.com S10-2466-Rev. C, 25-Oct-10 5

IRFD110, SiHFD110 Vishay Siliconix L VDS VDS Vary t to obtain p t required I p AS V DD Rg D.U.T. + V - DD V I DS AS 10 V t 0.01 W p I AS Fig. 12a - Unclamped Inductive Test Circuit Fig. 12b - Unclamped Inductive Waveforms 350 I D mJ) 300 Top 01..842 A A y ( Bottom 2.0 A g 250 er n E e 200 s ul P 150 e gl n 100 Si , AS 50 E V = 25 V DD 0 25 50 75 100 125 150 175 91127_12c Starting TJ, Junction Temperature (°C) Fig. 12c - Maximum Avalanche Energy vs. Drain Current Current regulator Same type as D.U.T. Q 50 kΩ G 10 V 12 V 0.2 µF 0.3 µF QGS QGD + V D.U.T. - DS V G V GS 3 mA Charge I I G D Current sampling resistors Fig. 13a - Basic Gate Charge Waveform Fig. 13b - Gate Charge Test Circuit www.vishay.com Document Number: 91127 6 S10-2466-Rev. C, 25-Oct-10

IRFD110, SiHFD110 Vishay Siliconix Peak Diode Recovery dV/dt Test Circuit + Circuit layout considerations D.U.T. (cid:129) Low stray inductance (cid:129) Ground plane (cid:129) Low leakage inductance current transformer - + - + - Rg (cid:129) dV/dt controlled by Rg + (cid:129) Driver same type as D.U.T. V - DD (cid:129) ISD controlled by duty factor “D” (cid:129) D.U.T. - device under test Driver gate drive Period D = P.W. P.W. Period V = 10 Va GS D.U.T. l waveform SD Reverse recovery Body diode forward current current dI/dt D.U.T. V waveform DS Diode recovery dV/dt V DD Re-applied voltage Body diode forward drop Inductor current Ripple ≤ 5 % ISD Note a. V = 5 V for logic level devices GS Fig. 14 - For N-Channel Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91127. Document Number: 91127 www.vishay.com S10-2466-Rev. C, 25-Oct-10 7

Package Information Vishay Siliconix HVM DIP (High voltage) 0.248 [6.29] 0.240 [6.10] 0.043 [1.09] 0.197 [5.00] 0.035 [0.89] 0.133 [3.37] 0.189 [4.80] 0.125 [3.18] 0.180 [4.57] 0.160 [4.06] 0.094 [2.38] A L 0.086 [2.18] 0.160 [4.06] 0.140 [3.56] 0° to 15° 0.017 [0.43] 2 x 0.045 [1.14] 0.013 [0.33] 2 x 0.035 [0.89] 0.024 [0.60] 4 x E min. 0.020 [0.51] 0.100 [2.54] typ. E max. INCHES MILLIMETERS DIM. MIN. MAX. MIN. MAX. A 0.310 0.330 7.87 8.38 E 0.300 0.425 7.62 10.79 L 0.270 0.290 6.86 7.36 ECN: X10-0386-Rev. B, 06-Sep-10 DWG: 5974 Note 1. Package length does not include mold flash, protrusions or gate burrs. Package width does not include interlead flash or protrusions. Document Number: 91361 www.vishay.com Revision: 06-Sep-10 1

Legal Disclaimer Notice www.vishay.com Vishay Disclaimer  ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. © 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED Revision: 08-Feb-17 1 Document Number: 91000

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