IRFBG30, SiHFBG30 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Dynamic dV/dt Rating V (V) 1000 DS • Repetitive Avalanche Rated Available R (Ω) V = 10 V 5.0 DS(on) GS RoHS* • Fast Switching Qg (Max.) (nC) 80 COMPLIANT Q (nC) 10 • Ease of Paralleling gs Q (nC) 42 • Simple Drive Requirements gd Configuration Single • Compliant to RoHS Directive 2002/95/EC D DESCRIPTION TO-220AB Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and G cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation S D levels to approximately 50 W. The low thermal resistance G S and low package cost of the TO-220AB contribute to its N-Channel MOSFET wide acceptance throughout the industry. ORDERING INFORMATION Package TO-220AB IRFBG30PbF Lead (Pb)-free SiHFBG30-E3 IRFBG30 SnPb SiHFBG30 ABSOLUTE MAXIMUM RATINGS (T = 25 °C, unless otherwise noted) C PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V 1000 DS V Gate-Source Voltage V ± 20 GS T = 25 °C 3.1 C Continuous Drain Current V at 10 V I GS D T = 100 °C 2.0 A C Pulsed Drain Currenta I 12 DM Linear Derating Factor 1.0 W/°C Single Pulse Avalanche Energyb E 280 mJ AS Repetitive Avalanche Currenta I 3.1 A AR Repetitive Avalanche Energya E 13 mJ AR Maximum Power Dissipation T = 25 °C P 125 W C D Peak Diode Recovery dV/dtc dV/dt 1.0 V/ns Operating Junction and Storage Temperature Range T , T - 55 to + 150 J stg °C Soldering Recommendations (Peak Temperature) for 10 s 300d 10 lbf · in Mounting Torque 6-32 or M3 screw 1.1 N · m Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. V = 50 V, starting T = 25 °C, L = 55 mH, R = 25 Ω, I = 3.1 A (see fig. 12). DD J g AS c. I ≤ 3.1 A, dI/dt ≤ 80 A/μs, V ≤ 600, T ≤ 150 °C. SD DD J d. 1.6 mm from case. * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 91124 www.vishay.com S11-0517-Rev. B, 21-Mar-11 1 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

IRFBG30, SiHFBG30 Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYP. MAX. UNIT Maximum Junction-to-Ambient R - 62 thJA Case-to-Sink, Flat, Greased Surface R 0.50 - °C/W thCS Maximum Junction-to-Case (Drain) R - 1.0 thJC SPECIFICATIONS (T = 25 °C, unless otherwise noted) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 μA 1000 - - V VDS Temperature Coefficient ΔVDS/TJ Reference to 25 °C, ID = 1 mA - 1.4 - V/°C Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 μA 2.0 - 4.0 V Gate-Source Leakage IGSS VGS = ± 20 V - - ± 100 nA VDS = 1000 V, VGS = 0 V - - 100 Zero Gate Voltage Drain Current I μA DSS VDS = 800 V, VGS = 0 V, TJ = 125 °C - - 500 Drain-Source On-State Resistance RDS(on) VGS = 10 V ID = 1.9 Ab - - 5.0 Ω Forward Transconductance gfs VDS = 10 V, ID = 1.9 Ab 2.1 - - S Dynamic Input Capacitance Ciss VGS = 0 V, - 980 - Output Capacitance C V = 25 V, - 140 - pF oss DS Reverse Transfer Capacitance Crss f = 1.0 MHz, see fig. 5 - 50 - Total Gate Charge Q - - 80 g I = 3.1 A, V =400 V, D DS Gate-Source Charge Q V = 10 V - - 10 nC gs GS see fig. 6 and 13b Gate-Drain Charge Q - - 42 gd Turn-On Delay Time t - 12 - d(on) Rise Time tr VDD = 500 V, ID = 3.1 A - 25 - ns Turn-Off Delay Time td(off) R = 12 Ω, R = 170 Ω, see fig. 10b - 89 - g D Fall Time t - 29 - f Between lead, Internal Drain Inductance L D - 4.5 - D 6 mm (0.25") from nH package and center of G Internal Source Inductance L - 7.5 - S die contact S Drain-Source Body Diode Characteristics MOSFET symbol Continuous Source-Drain Diode Current IS showing the D - - 3.1 A integral reverse Pulsed Diode Forward Currenta I G - - 12 SM p - n junction diode S Body Diode Voltage VSD TJ = 25 °C, IS = 3.1 A, VGS = 0 Vb - - 1.8 V Body Diode Reverse Recovery Time trr - 410 620 ns T = 25 °C, I = 3.1 A, dI/dt = 100 A/μsb J F Body Diode Reverse Recovery Charge Qrr - 1.3 2.0 μC Forward Turn-On Time ton Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD) Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width ≤ 300 μs; duty cycle ≤ 2 %. www.vishay.com Document Number: 91124 2 S11-0517-Rev. B, 21-Mar-11 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

IRFBG30, SiHFBG30 Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Fig. 1 - Typical Output Characteristics, T = 25 °C Fig. 3 - Typical Transfer Characteristics C Fig. 2 - Typical Output Characteristics, T = 150 °C Fig. 4 - Normalized On-Resistance vs. Temperature C Document Number: 91124 www.vishay.com S11-0517-Rev. B, 21-Mar-11 3 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

IRFBG30, SiHFBG30 Vishay Siliconix Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage Fig. 7 - Typical Source-Drain Diode Forward Voltage Fig. 8 - Maximum Safe Operating Area Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.com Document Number: 91124 4 S11-0517-Rev. B, 21-Mar-11 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

IRFBG30, SiHFBG30 Vishay Siliconix R D V DS V GS D.U.T. R G + -VDD 10 V Pulse width ≤ 1 µs Duty factor ≤ 0.1 % Fig. 10a - Switching Time Test Circuit V DS 90 % 10 % V GS t t t t d(on) r d(off) f Fig. 9 - Maximum Drain Current vs. Case Temperature Fig. 10b - Switching Time Waveforms Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case Document Number: 91124 www.vishay.com S11-0517-Rev. B, 21-Mar-11 5 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

IRFBG30, SiHFBG30 Vishay Siliconix L V DS V Vary tp to obtain DS tp required IAS VDD RG D.U.T + V - DD V I DS AS 10 V tp 0.01 Ω A I AS Fig. 12a - Unclamped Inductive Test Circuit Fig. 12b - Unclamped Inductive Waveforms Fig. 12c - Maximum Avalanche Energy vs. Drain Current Current regulator Same type as D.U.T. Q 50 kΩ G 10 V 12 V 0.2 µF 0.3 µF QGS QGD + V D.U.T. - DS V G V GS 3 mA Charge I I G D Current sampling resistors Fig. 13a - Basic Gate Charge Waveform Fig. 13b - Gate Charge Test Circuit www.vishay.com Document Number: 91124 6 S11-0517-Rev. B, 21-Mar-11 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

IRFBG30, SiHFBG30 Vishay Siliconix Peak Diode Recovery dV/dt Test Circuit + Circuit layout considerations D.U.T. (cid:129) Low stray inductance (cid:129) Ground plane (cid:129) Low leakage inductance current transformer - + - + - Rg (cid:129) dV/dt controlled by Rg + (cid:129) Driver same type as D.U.T. V - DD (cid:129) ISD controlled by duty factor “D” (cid:129) D.U.T. - device under test Driver gate drive P.W. Period D = P.W. Period V = 10 Va GS D.U.T. l waveform SD Reverse recovery Body diode forward current current dI/dt D.U.T. V waveform DS Diode recovery dV/dt V DD Re-applied voltage Body diode forward drop Inductor current Ripple ≤ 5 % ISD Note a. V = 5 V for logic level devices GS Fig. 14 - For N-Channel Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?91124. Document Number: 91124 www.vishay.com S11-0517-Rev. B, 21-Mar-11 7 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Package Information www.vishay.com Vishay Siliconix TO-220-1 A MILLIMETERS INCHES E DIM. MIN. MAX. MIN. MAX. F A 4.24 4.65 0.167 0.183 Ø P b 0.69 1.02 0.027 0.040 Q b(1) 1.14 1.78 0.045 0.070 1) H( c 0.36 0.61 0.014 0.024 D 14.33 15.85 0.564 0.624 E 9.96 10.52 0.392 0.414 D e 2.41 2.67 0.095 0.105 e(1) 4.88 5.28 0.192 0.208 F 1.14 1.40 0.045 0.055 H(1) 6.10 6.71 0.240 0.264 1 2 3 J(1) 2.41 2.92 0.095 0.115 L 13.36 14.40 0.526 0.567 1) L(1) 3.33 4.04 0.131 0.159 L( M* Ø P 3.53 3.94 0.139 0.155 Q 2.54 3.00 0.100 0.118 b(1) L ECN: X15-0364-Rev. C, 14-Dec-15 DWG: 6031 Note • M* = 0.052 inches to 0.064 inches (dimension including protrusion), heatsink hole for HVM C b e J(1) e(1) Package Picture ASE Xi’an Revison: 14-Dec-15 1 Document Number: 66542 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Legal Disclaimer Notice www.vishay.com Vishay Disclaimer  ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. © 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED Revision: 08-Feb-17 1 Document Number: 91000

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