PD - 95536 IRFB23N20DPbF IRFS23N20DPbF SMPS MOSFET IRFSL23N20DPbF HEXFET(cid:1)(cid:1)Power MOSFET Applications V R max I DSS DS(on) D (cid:7) High frequency DC-DC converters 200V 0.10Ω 24A (cid:7) Lead-Free Benefits (cid:7) Low Gate-to-Drain Charge to Reduce Switching Losses (cid:7) Fully Characterized Capacitance Including Effective C to Simplify Design, (See OSS App. Note AN1001) (cid:7) Fully Characterized Avalanche Voltage and Current TO-220AB D2Pak TO-262 IRFB23N20D IRFS23N20D IRFSL23N20D Absolute Maximum Ratings Parameter Max. Units I @ T = 25°C Continuous Drain Current, V @ 10V 24 D C GS I @ T = 100°C Continuous Drain Current, V @ 10V 17 A D C GS I Pulsed Drain Current (cid:1) 96 DM P @T = 25°C Power Dissipation (cid:4) 3.8 W D A P @T = 25°C Power Dissipation 170 D C Linear Derating Factor 1.1 W/°C V Gate-to-Source Voltage ± 30 V GS dv/dt Peak Diode Recovery dv/dt (cid:5) 3.3 V/ns T Operating Junction and -55 to + 175 J TSTG Storage Temperature Range °C Soldering Temperature, for 10 seconds 300 (1.6mm from case ) Mounting torqe, 6-32 or M3 screw(cid:6) 10 lbf•in (1.1N•m) Typical SMPS Topologies (cid:7)(cid:2)Telecom 48V input Forward Converter Notes(cid:1)(cid:1)(cid:2)through (cid:3)(cid:2)are on page 11 www.irf.com 1 (cid:2)(cid:3)(cid:4)(cid:5)(cid:3)(cid:5)(cid:6)

IRFB/IRFS/IRFSL23N20DPbF Static @ T = 25°C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage 200 ––– ––– V VGS = 0V, ID = 250µA ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.26 ––– V/°C Reference to 25°C, ID = 1mA (cid:6) RDS(on) Static Drain-to-Source On-Resistance ––– ––– 0.10 Ω VGS = 10V, ID = 14A(cid:2)(cid:8) VGS(th) Gate Threshold Voltage 3.0 ––– 5.5 V VDS = VGS, ID = 250µA IDSS Drain-to-Source Leakage Current ––– ––– 25 µA VDS = 200V, VGS = 0V ––– ––– 250 VDS = 160V, VGS = 0V, TJ = 150°C I Gate-to-Source Forward Leakage ––– ––– 100 nA VGS = 30V GSS Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -30V Dynamic @ T = 25°C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions gfs Forward Transconductance 13 ––– ––– S VDS = 50V, ID = 14A Qg Total Gate Charge ––– 57 86 ID = 14A Qgs Gate-to-Source Charge ––– 14 21 nC VDS = 160V Qgd Gate-to-Drain ("Miller") Charge ––– 27 40 VGS = 10V, (cid:8)(cid:6) td(on) Turn-On Delay Time ––– 14 ––– VDD = 100V tr Rise Time ––– 32 ––– ns ID = 14A td(off) Turn-Off Delay Time ––– 26 ––– RG = 4.6Ω tf Fall Time ––– 16 ––– VGS = 10V(cid:2)(cid:8) Ciss Input Capacitance ––– 1960 ––– VGS = 0V Coss Output Capacitance ––– 300 ––– VDS = 25V Crss Reverse Transfer Capacitance ––– 65 ––– pF ƒ = 1.0MHz(cid:6) Coss Output Capacitance ––– 2200 ––– VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz Coss Output Capacitance ––– 120 ––– VGS = 0V, VDS = 160V, ƒ = 1.0MHz Coss eff. Effective Output Capacitance ––– 220 ––– VGS = 0V, VDS = 0V to 160V (cid:3) Avalanche Characteristics Parameter Typ. Max. Units E Single Pulse Avalanche Energy(cid:9)(cid:6) ––– 250 mJ AS I Avalanche Current(cid:1) ––– 14 A AR E Repetitive Avalanche Energy(cid:1) ––– 17 mJ AR Thermal Resistance Parameter Typ. Max. Units RθJC Junction-to-Case ––– 0.90 RθCS Case-to-Sink, Flat, Greased Surface (cid:6) 0.50 ––– °C/W RθJA Junction-to-Ambient(cid:6) ––– 62 RθJA Junction-to-Ambient(cid:4) ––– 40 Diode Characteristics Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current ––– ––– 24 MOSFET symbol D (Body Diode) (cid:7) showing the ISM Pulsed Source Current ––– ––– 96 integral reverse G (Body Diode) (cid:1)(cid:6) p-n junction diode. S VSD Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 14A, VGS = 0V(cid:2)(cid:8) trr Reverse Recovery Time ––– 200 300 ns TJ = 25°C, IF = 14A Qrr Reverse RecoveryCharge ––– 1300 1940 nC di/dt = 100A/µs(cid:1)(cid:8) ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) 2 www.irf.com

IRFB/IRFS/IRFSL23N20DPbF 100 100 VGS VGS TOP 15V TOP 15V 12V 12V nt (A) 18760...000VVVV nt (A) 18760...000VVVV e 10 5.5V e 5.5V urr BOTTOM5.0V urr BOTTOM5.0V C C e e c c ur ur o 1 o 10 S S o- o- n-t n-t Drai 5.0V Drai 5.0V I , D0.1 I , D 20µs PULSE WIDTH 20µs PULSE WIDTH TJ = 25°C TJ = 175°C 0.01 1 0.1 1 10 100 0.1 1 10 100 V D S , Drain-to-Source Voltage (V) V D S , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 100 3.5 ID=24A e c A) TJ = 175 ° C an 3.0 nt ( sist e e Curr 10 n R 2.5 ource TJ = 25 ° C urce Oalized) 2.0 S om I , Drain-to-D0. 11 V20 D µ Ss =P U50LVSE WIDTH R , Drain-to-SDS(on)(Nor 0011....0505 VGS=10V 5.0 6.0 7.0 8.0 9.0 10.0 -60 -40 -20 0 20 40 60 80 100120140160180 V G S , Gate-to-Source Voltage (V) T J , Junction Temperature( ° C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com 3

IRFB/IRFS/IRFSL23N20DPbF 20 100000 ID=14A VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, Cds SHORTED V) VVDS== 110600VV CCrss == CCgd + C ge ( 16 VDDSS= 40V 10000 oss ds gd a F) olt p V nec( Ciss urce 12 acti1000 So Capa Coss e-to- 8 C, Gat 100 Crss V , GS 4 FOR TEST CIRCUIT SEE FIGURE 1 3 10 0 1 10 100 1000 0 20 40 60 80 100 Q , Total Gate Charge (nC) V , Drain-to-Source Voltage (V) G DS Fig 5. Typical Capacitance Vs. Fig 6. Typical Gate Charge Vs. Drain-to-Source Voltage Gate-to-Source Voltage 100 1000 OPERATION IN THIS AREA LIMITED A) BY RDS(on) nt ( T = 175 ° C Curre 10 J nt (A)nt (A) 100 ain urreurre 10us Dr CC se TJ = 25 ° C ain ain 100us er DrDr I , RevSD 1 I , I , D 10 TC= 25 ° C 1ms TJ= 175 ° C 10ms V G S = 0 V Single Pulse 0.1 1 0.2 0.5 0.8 1.1 1.4 1 10 100 1000 V S D ,Source-to-Drain Voltage (V) V D S , Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Fig 8. Maximum Safe Operating Area Forward Voltage 4 www.irf.com

IRFB/IRFS/IRFSL23N20DPbF (cid:9) 25 (cid:8) (cid:1) (cid:1)(cid:2) (cid:8) (cid:21)(cid:2) (cid:10)(cid:11)(cid:12)(cid:11)(cid:13)(cid:11) 20 (cid:9) (cid:21) A) +-(cid:8)(cid:1)(cid:1) nt ( e 15 (cid:14)(cid:5)(cid:8) Curr (cid:3)(cid:4)(cid:5)(cid:6)(cid:7)(cid:8)(cid:9)(cid:10)(cid:11)(cid:12)(cid:13)(cid:8)≤ 1 (cid:14)(cid:6) n (cid:1)(cid:4)(cid:12)(cid:15)(cid:8)(cid:16)(cid:17)(cid:18)(cid:12)(cid:19)(cid:20)(cid:8)≤ 0.1 % ai Dr 10 I , D Fig 10a. Switching Time Test Circuit 5 VDS 90% 0 25 50 75 100 125 150 175 T , Case Temperature ( ° C) C 10% VGS Fig 9. Maximum Drain Current Vs. td(on) tr td(off) tf Case Temperature Fig 10b. Switching Time Waveforms 1 ) D = 0.50 Z thJC ( 0.20 e s n o 0.10 p 0.1 s e al R 0.05 PDM erm 0.02 SINGLE PULSE t1 Th 0.01 (THERMAL RESPONSE) t2 Notes: 1. Duty factor D = t 1 / t2 2. Peak TJ=PDMx ZthJC+ TC 0.01 0.00001 0.0001 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5

IRFB/IRFS/IRFSL23N20DPbF 600 15V J) ID m TOP 5.9A ( gy 500 10A VDS L DRIVER ner BOTTOM 14A E e 400 h RG D.U.T + nc IAS - VDDA vala 300 20V A tp 0.01Ω e s ul 200 Fig 12a. Unclamped Inductive Test Circuit P e gl n Si 100 tp V(BR)DSS E , AS 0 25 50 75 100 125 150 175 Starting T , Junction Temperature ( ° C) J Fig 12c. Maximum Avalanche Energy IAS Vs. Drain Current Fig 12b. Unclamped Inductive Waveforms CurrentRegulator SameTypeasD.U.T. Q G 50KΩ (cid:1)(cid:2)(cid:3)(cid:4) 12V .2µF .3µF Q Q GS GD + D.U.T. -VDS VG VGS 3mA Charge IG ID CurrentSamplingResistors Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit 6 www.irf.com

IRFB/IRFS/IRFSL23N20DPbF (cid:1)(cid:2)(cid:3)(cid:4)(cid:5)(cid:6)(cid:7)(cid:8)(cid:9)(cid:2)(cid:5)(cid:10)(cid:2)(cid:11)(cid:8)(cid:12)(cid:2)(cid:13)(cid:14)(cid:5)(cid:9)(cid:12)(cid:15)(cid:9)(cid:16)(cid:5)(cid:17)(cid:2)(cid:18)(cid:16)(cid:5)(cid:19)(cid:7)(cid:13)(cid:11)(cid:20)(cid:7)(cid:16) + )(cid:22)(cid:19)(cid:23)%(cid:22)(cid:29)(cid:1)(cid:20)! (cid:18)%(cid:29)(cid:1))(cid:18)(cid:30)(cid:27)(cid:22)(cid:28)(cid:24)(cid:19)!(cid:29)(cid:22)(cid:18)(cid:30)(cid:27) (cid:1)(cid:2)(cid:3)(cid:2)(cid:4) • (cid:1)(cid:20)(cid:18)*(cid:1)+(cid:29)(cid:19)! (cid:1)$(cid:30)(cid:28)%(cid:23)(cid:29)!(cid:30)(cid:23)(cid:24) (cid:1) (cid:1)(cid:1) • ,(cid:19)(cid:18)%(cid:30)(cid:28)(cid:1)-(cid:26)!(cid:30)(cid:24) (cid:1)(cid:1) • (cid:20)(cid:18)*(cid:1)(cid:20)(cid:24)!.!(cid:21)(cid:24)(cid:1)$(cid:30)(cid:28)%(cid:23)(cid:29)!(cid:30)(cid:23)(cid:24) (cid:1)(cid:1)(cid:1)(cid:1)(cid:1)(cid:1))%(cid:19)(cid:19)(cid:24)(cid:30)(cid:29)(cid:1)(cid:13)(cid:19)!(cid:30)(cid:27)(cid:17)(cid:18)(cid:19)"(cid:24)(cid:19) - + (cid:3) (cid:2) - + - (cid:4) (cid:9)(cid:21) • (cid:28)(cid:25)(cid:3)(cid:28)(cid:29)(cid:1)(cid:23)(cid:18)(cid:30)(cid:29)(cid:19)(cid:18)(cid:26)(cid:26)(cid:24)(cid:28)(cid:1)(cid:31) (cid:1)(cid:9)(cid:21) + •• (cid:10)$(cid:2)(cid:19)(cid:1)(cid:22)(cid:1)(cid:25)(cid:23)(cid:24)(cid:18)(cid:19)(cid:30)(cid:1)(cid:27)(cid:29)!(cid:19)(cid:18)"(cid:26)(cid:26)(cid:24)(cid:24)(cid:28)(cid:1)(cid:29)(cid:1) (cid:31)# (cid:24)(cid:1)(cid:1)(cid:10)!%(cid:27)(cid:29)(cid:1) (cid:10)(cid:1)&(cid:11)(cid:12)!(cid:11)(cid:23)(cid:13)(cid:29)(cid:18)(cid:11)(cid:19)(cid:1)’(cid:10)’ - (cid:8)(cid:1)(cid:1) • (cid:10)(cid:11)(cid:12)(cid:11)(cid:13)(cid:11)(cid:1)((cid:1)(cid:10)(cid:24)(cid:25)(cid:22)(cid:23)(cid:24)(cid:1)(cid:12)(cid:30)(cid:28)(cid:24)(cid:19)(cid:1)(cid:13)(cid:24)(cid:27)(cid:29) Driver Gate Drive P.W. Period D = P.W. Period V =10V (cid:5) GS D.U.T. I Waveform SD Reverse Recovery Body Diode Forward Current Current di/dt D.U.T. V Waveform DS Diode Recovery dv/dt V DD Re-Applied Voltage Body Diode Forward Drop Inductor Curent I Ripple ≤ 5% SD (cid:5)(cid:1)(cid:8) (cid:1)(cid:15)(cid:1)(cid:16)(cid:8)(cid:1)(cid:17)(cid:18)(cid:19)(cid:1)(cid:20)(cid:18)(cid:21)(cid:22)(cid:23)(cid:1)(cid:20)(cid:24)(cid:25)(cid:24)(cid:26)(cid:1)(cid:10)(cid:24)(cid:25)(cid:22)(cid:23)(cid:24)(cid:27) (cid:21)(cid:2) Fig 14. For N-Channel HEXFET(cid:1)(cid:3)Power MOSFETs www.irf.com 7

IRFB/IRFS/IRFSL23N20DPbF (cid:1)(cid:2)(cid:3)(cid:4)(cid:4)(cid:5)(cid:6)(cid:7)(cid:8)(cid:9)(cid:10)(cid:11)(cid:12)(cid:10)(cid:13)(cid:14)(cid:8)(cid:2)(cid:15)(cid:16)(cid:17)(cid:18)(cid:19)(cid:14) Dimensions are shown in millimeters (inches) 10.54 (.415) 3.78 (.149) - B - 2.87 (.113) 10.29 (.405) 3.54 (.139) 4.69 (.185) 2.62 (.103) - A - 4.20 (.165) 1.32 (.052) 1.22 (.048) 6.47 (.255) 4 6.10 (.240) 15.24 (.600) 14.84 (.584) LEAD ASSIGNMENTS 1.15 (.045) LEAD ASSIGNMENTS MIN HE X F E 1T - GATE IGBTs, CoPACK 1 2 3 1- G A T 2E - DRAIN 1- GATE 2- D R A 3I N- SOURCE2- COLLECTOR 3- S O U 4R - CDERAIN 3- EMITTER 4- DRAIN 4- COLLECTOR 14.09 (.555) 13.47 (.530) 4.06 (.160) 3.55 (.140) 1.40 (.055) 3X 00..9639 ((..003277)) 3X00..5456 ((..002128)) 3X1.15 (.045) 0.36 (.014) M B A M 2.92 (.115) 2.64 (.104) 2.54 (.100) 2X NOTES: 1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982. 3 OUTLINE CONFORMS TO JEDEC OUTLINE TO-220AB. 2 CONTROLLING DIMENSION : INCH 4 HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS. (cid:1)(cid:2)(cid:3)(cid:4)(cid:4)(cid:5)(cid:6)(cid:7)(cid:8)(cid:9)(cid:10)(cid:20)(cid:16)(cid:8)(cid:21)(cid:10)(cid:20)(cid:12)(cid:18)(cid:19)(cid:13)(cid:8)(cid:22)(cid:19)(cid:23)(cid:24)(cid:20)(cid:25)(cid:10)(cid:16)(cid:18)(cid:24)(cid:19) EXAMPLE: THIS IS AN IRF1010 LOT CODE 1789 ASSEMBLED ON WW 19, 1997 INTERNATIONAL PART NUMBER IN THE ASSEMBLY LINE "C" RECTIFIER LOGO Note: "P" in assembly line position indicates "Lead-Free" DATE CODE YEAR 7 = 1997 ASSEMBLY LOT CODE WEEK 19 LINE C 8 www.irf.com

IRFB/IRFS/IRFSL23N20DPbF (cid:26)(cid:1)(cid:9)(cid:10)(cid:12)(cid:8)(cid:9)(cid:10)(cid:11)(cid:12)(cid:10)(cid:13)(cid:14)(cid:8)(cid:2)(cid:15)(cid:16)(cid:17)(cid:18)(cid:19)(cid:14) Dimensions are shown in millimeters (inches) (cid:26)(cid:1)(cid:9)(cid:10)(cid:12)(cid:8)(cid:9)(cid:10)(cid:20)(cid:16)(cid:8)(cid:21)(cid:10)(cid:20)(cid:12)(cid:18)(cid:19)(cid:13)(cid:8)(cid:22)(cid:19)(cid:23)(cid:24)(cid:20)(cid:25)(cid:10)(cid:16)(cid:18)(cid:24)(cid:19)(cid:8)(cid:27)(cid:28)(cid:14)(cid:10)(cid:29)(cid:3)(cid:30)(cid:20)(cid:14)(cid:14)(cid:31) THIS IS AN IRF530S WITH PART NUMBER LOT CODE 8024 INTERNATIONAL ASSEMBLED ON WW 02, 2000 RECTIFIER F530S IN THE ASSEMBLY LINE "L" LOGO DATE CODE pNoosteit:io "nP "i nind iacsasteesm "bLleya lidn-eFree" ASSEMBLY YEAR 0 = 2000 LOT CODE WEEK 02 LINE L (cid:1)(cid:2) PART NUMBER INTERNATIONAL RECTIFIER F530S LOGO DATE CODE P = DESIGNATES LEAD-FREE ASSEMBLY PRODUCT (OPTIONAL) LOT CODE YEAR 0 = 2000 WEEK 02 A = ASSEMBLY SITE CODE www.irf.com 9

IRFB/IRFS/IRFSL23N20DPbF TO-262 Package Outline TO-262 Part Marking Information EXAMPLE: THIS IS AN IRL3103L LOT CODE 1789 PART NUMBER INTERNATIONAL ASSEMBLED ON WW 19, 1997 RECTIFIER IN THE ASSEMBLY LINE "C" LOGO Note: "P" in assembly line DATE CODE position indicates "Lead-Free" ASSEMBLY YEAR 7 = 1997 LOT CODE WEEK 19 LINE C OR PART NUMBER INTERNATIONAL RECTIFIER LOGO DATE CODE P = DESIGNATES LEAD-FREE ASSEMBLY PRODUCT (OPTIONAL) LOT CODE YEAR 7 = 1997 WEEK 19 A = ASSEMBLY SITE CODE 10 www.irf.com

IRFB/IRFS/IRFSL23N20DPbF D2Pak Tape & Reel Infomation TRR 1.60 (.063) 1.50 (.059) 43..1900 ((..116513)) 11..6500 ((..006539)) 0.368 (.0145) 0.342 (.0135) FEED DIRECTION 1.85 (.073) 11.60 (.457) 1.65 (.065) 11.40 (.449) 1155..4222 ((..660091)) 2243..3900 ((..995471)) TRL 1.75 (.069) 10.90 (.429) 1.25 (.049) 10.70 (.421) 4.72 (.136) 16.10 (.634) 4.52 (.178) 15.90 (.626) FEED DIRECTION 13.50 (.532) 27.40 (1.079) 12.80 (.504) 23.90 (.941) 4 330.00 60.00 (2.362) (14.173) MIN. MAX. 30.40 (1.197) NOTES : MAX. 1. COMFORMS TO EIA-418. 26.40 (1.039) 4 2. CONTROLLING DIMENSION: MILLIMETER. 24.40 (.961) 34.. DINIMCLEUNDSEIOSN F LMAENAGSEU RDEISDT @OR HTUIOBN. @ OUTER EDGE. 3 (cid:5)(cid:6)(cid:7)(cid:8)(cid:9)(cid:10) (cid:4)(cid:1)Repetitive rating; pulse width limited by (cid:2) Pulse width ≤ 300µs; duty cycle ≤ 2%. max. junction temperature. (cid:3) (cid:1)Starting TJ = 25°C, L = 2.6mH (cid:5) Coss eff. is a fixed capacitance that gives the same charging time RG = 25Ω, IAS = 14A. as Coss while VDS is rising from 0 to 80% VDSS (cid:1)ISD ≤ 14A, di/dt ≤ 130A/µs, VDD ≤ V(BR)DSS, (cid:6) This is only applied to TO-220AB package TJ ≤ 175°C (cid:7)(cid:1)This is applied to D2Pak, when mounted on 1" square PCB ( FR-4 or G-10 Material ). For recommended footprint and soldering techniques refer to application note #AN-994. Data and specifications subject to change without notice. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.07/04 www.irf.com 11

Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/

Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: I nfineon: IRFS23N20DPBF IRFS23N20DTRRP IRFB23N20DPBF IRFS23N20DTRLP