IRF9Z34, SiHF9Z34 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Dynamic dV/dt rating VDS (V) -60 • Repetitive avalanche rated Available RDS(on) () VGS = -10 V 0.14 • P-channel Q max. (nC) 34 • 175 °C operating temperature Available g • Fast switching Q (nC) 9.9 gs • Ease of paralleling Q (nC) 16 gd • Simple drive requirements Configuration Single • Material categorization: for definitions of compliance S please see www.vishay.com/doc?99912 Note * This datasheet provides information about parts that are TO-220AB RoHS-compliant and / or parts that are non-RoHS-compliant. For G example, parts with lead (Pb) terminations are not RoHS-compliant. Please see the information / tables in this datasheet for details. DESCRIPTION Third generation power MOSFETs from Vishay provide the S designer with the best combination of fast switching, D D G ruggedized device design, low on-resistance and P-Channel MOSFET cost-effectiveness.  The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220AB contribute to its wide acceptance throughout the industry. ORDERING INFORMATION Package TO-220AB IRF9Z34PbF Lead (Pb)-free SiHF9Z34-E3 IRF9Z34 SnPb SiHF9Z34 ABSOLUTE MAXIMUM RATINGS (T = 25 °C, unless otherwise noted) C PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V -60 DS V Gate-Source Voltage V ± 20 GS T = 25 °C -18 C Continuous Drain Current V at -10 V I GS D T = 100 °C -13 A C Pulsed Drain Current a I -72 DM Linear Derating Factor 0.59 W/°C Single Pulse Avalanche Energy b E 370 mJ AS Repetitive Avalanche Current a I -18 A AR Repetitive Avalanche Energy a E 8.8 mJ AR Maximum Power Dissipation T = 25 °C P 88 W C D Peak Diode Recovery dV/dt c dV/dt -4.5 V/ns Operating Junction and Storage Temperature Range T , T -55 to +175 J stg °C Soldering Recommendations (Peak temperature) d for 10 s 300 10 lbf · in Mounting Torque 6-32 or M3 screw 1.1 N · m Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. VDD = -25 V, starting TJ = 25 °C, L = 1.3 mH, Rg = 25 , IAS = -18 A (see fig. 12). c. ISD  -18 A, dI/dt  170 A/μs, VDD  VDS, TJ  175 °C. d. 1.6 mm from case. S16-0754-Rev. C, 02-May-16 1 Document Number: 91092 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

IRF9Z34, SiHF9Z34 www.vishay.com Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYP. MAX. UNIT Maximum Junction-to-Ambient R - 62 thJA Case-to-Sink, Flat, Greased Surface R 0.50 - °C/W thCS Maximum Junction-to-Case (Drain) R - 1.7 thJC SPECIFICATIONS (T = 25 °C, unless otherwise noted) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage V V = 0 V, I = -250 μA -60 - - V DS GS D VDS Temperature Coefficient VDS/TJ Reference to 25 °C, ID = -1 mA - -0.060 - V/°C Gate-Source Threshold Voltage V V = V , I = 250 μA -2.0 - -4.0 V GS(th) DS GS D Gate-Source Leakage I V = ± 20 V - - ± 100 nA GSS GS V = -60 V, V = 0 V - - -100 DS GS Zero Gate Voltage Drain Current I μA DSS V = -48 V, V = 0 V, T = 150 °C - - -500 DS GS J Drain-Source On-State Resistance RDS(on) VGS = -10 V ID = -11 A b - - 0.14  Forward Transconductance g V = -25 V, I = -11 A b 5.9 - - S fs DS D Dynamic Input Capacitance C - 1100 - iss V = 0 V, GS Output Capacitance C V = -25 V, - 620 - pF oss DS f = 1.0 MHz, see fig. 5 Reverse Transfer Capacitance C - 100 - rss Total Gate Charge Q - - 34 g I = -1 8 A, D Gate-Source Charge Q V = -10 V V = -48 V, - - 9.9 nC gs GS DS see fig. 6 and 13 b Gate-Drain Charge Q - - 16 gd Turn-On Delay Time t - 18 - d(on) Rise Time t - 120 - r VDD = -30 V, ID = -18 A, ns Turn-Off Delay Time td(off) Rg = 12 , RD = 1.5, see fig. 10 b - 20 - Fall Time t - 58 - f Internal Drain Inductance LD Between lead, D - 4.5 - 6 mm (0.25") from package and center of nH G die contact Internal Source Inductance L - 7.5 - S S Gate Input Resistance Rg f = 1 MHz, open drain 0.7 - 3.9  Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS MOSFET symbol D - - -18 showing the  A integral reverse G Pulsed Diode Forward Currenta ISM p -n junction diode S - - -72 Body Diode Voltage V T = 25 °C, I = -18 A, V = 0 V b - - -6.3 V SD J S GS Body Diode Reverse Recovery Time t - 100 200 ns rr T = 25 °C, I = -18 A, dI/dt = 100 A/μs b J F Body Diode Reverse Recovery Charge Q - 0.28 0.52 μC rr Forward Turn-On Time t Intrinsic turn-on time is negligible (turn-on is dominated by L and L ) on S D Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width  300 μs; duty cycle  2 %. S16-0754-Rev. C, 02-May-16 2 Document Number: 91092 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

IRF9Z34, SiHF9Z34 www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 102 VGS nce 2.5 ID = - 18 A urrent (A) 101 Top ------- 118765550.....00050 VV VVVVV ce On Resistazed) 12..50 VGS = - 10 V n C Bottom - 4.5 V ourmali - I, DraiD - 4.5 V Drain-to-S(Nor 01..50 100 20 µs Pulse Width , n) o TC = 25 °C RDS( 0.0 10-1 100 101 - 60- 40- 20 0 20 40 60 80 100120140160180 91092_01 - VDS, Drain-to-Source Voltage (V) 91092_04 TJ, Junction Temperature (°C) Fig. 1 - Typical Output Characteristics, T = 25 °C Fig. 4 - Normalized On-Resistance vs. Temperature C 102 2000 VGS VGS = 0 V, f = 1 MHz Top - 15 V Ciss = Cgs + Cgd, Cds Shorted - 10 V C = C 1600 rss gd ain Current (A) 101 Bottom ------ 876554......000505 VVVVVV - 4.5 V acitance (pF) 1280000 Coss = Cds + CgdCCiossss Dr ap , D C - I 400 100 C 20 µs Pulse Width rss T = 175 °C C 0 10-1 100 101 100 101 91092_02 - VDS, Drain-to-Source Voltage (V) 91092_05 - VDS, Drain-to-Source Voltage (V) Fig. 2 - Typical Output Characteristics, T = 175 °C Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage C 20 I = - 18 A V) D e ( VDS = - 48 V A) 25 °C ag 16 nt ( 175 °C Volt VDS = - 30 V Curre 101 urce 12 n So , DraiD ate-to- 8 - I , GS 4 100 20 µs Pulse Width VG For test circuit VDS = - 25 V - see figure 13 0 4 5 6 7 8 9 10 0 5 10 15 20 25 30 35 91092_03 - VGS, Gate-to-Source Voltage (V) 91092_06 QG, Total Gate Charge (nC) Fig. 3 - Typical Transfer Characteristics Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage S16-0754-Rev. C, 02-May-16 3 Document Number: 91092 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

IRF9Z34, SiHF9Z34 www.vishay.com Vishay Siliconix 20 A) nt ( 16 Curre 101 nt (A) Drain 175 °C 25 °C Curre 12 se ain 8 er Dr , RevD 100 - I, D 4 S - I V = 0 V GS 0 0.0 1.0 2.0 3.0 4.0 5.0 25 50 75 100 125 150 175 91092_07 - VSD, Source-to-Drain Voltage (V) 91092_09 TC, Case Temperature (°C) Fig. 7 - Typical Source-Drain Diode Forward Voltage Fig. 9 - Maximum Drain Current vs. Case Temperature R 103 Operation in this area limited VDS D 5 by R DS(on) V GS D.U.T. A) 2 R ent ( 102 10 µs G +-VDD Curr 5 100 µs - 10 V Drain 102 1 ms PDuultsye f awcitdotrh ≤≤ 01. 1µ %s , D - I 5 T = 25 °C 10 ms Fig. 10a - Switching Time Test Circuit C 2 TJ = 175 °C Single Pulse t t t t 1 V d(on) r d(off) f 0.1 2 5 1 2 5 10 2 5 102 2 5 103 GS 10 % 91092_08 - VDS, Drain-to-Source Voltage (V) Fig. 8 - Maximum Safe Operating Area 90 % V DS Fig. 10b - Switching Time Waveforms 10 )C hJ Zt e ( 1 D = 0.5 s n spo 0.2 PDM Re 0.1 mal 0.1 0.05 t1 er 0.02 Single Pulse t2 Th 0.01 (Thermal Response) Notes: 1. Duty Factor, D = t/t 1 2 2. Peak T = P x Z + T j DM thJC C 10-2 10-5 10-4 10-3 10-2 0.1 1 10 91092_11 t1, Rectangular Pulse Duration (s) Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case S16-0754-Rev. C, 02-May-16 4 Document Number: 91092 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

IRF9Z34, SiHF9Z34 www.vishay.com Vishay Siliconix L I AS V DS Vary t to obtain p required I AS V DS R D.U.T G - +V DD IAS VDD t - 10 V p t 0.01 Ω p V DS Fig. 12a - Unclamped Inductive Test Circuit Fig. 12b - Unclamped Inductive Waveforms 1200 I D J) Top - 7.3 A m 1000 - 13 A y ( Bottom - 18 A g er 800 n E e s 600 ul P e gl 400 n Si , S 200 A E V = - 25 V 0 DD 25 50 75 100 125 150 175 91092_12c Starting TJ, Junction Temperature (°C) Fig. 12c - Maximum Avalanche Energy vs. Drain Current Current regulator Same type as D.U.T. Q 50 kΩ G - 10 V 12 V 0.2 µF 0.3 µF QGS QGD - V D.U.T. + DS V G V GS - 3 mA Charge I I G D Current sampling resistors Fig. 13a - Basic Gate Charge Waveform Fig. 13b - Gate Charge Test Circuit S16-0754-Rev. C, 02-May-16 5 Document Number: 91092 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

IRF9Z34, SiHF9Z34 www.vishay.com Vishay Siliconix Peak Diode Recovery dV/dt Test Circuit D.U.T. + Circuit layout considerations (cid:129) Low stray inductance (cid:129) Ground plane (cid:129) Low leakage inductance current transformer - + - + - Rg (cid:129) dV/dt controlled by Rg + (cid:129)(cid:129) IDSD.U c.oTn. t-r odlelevdic be yu dnduteyr ftaecsttor “D” - VDD Note (cid:129) Compliment N-Channel of D.U.T. for driver Driver gate drive P.W. Period D = P.W. Period V = - 10 Va GS D.U.T. l waveform SD Reverse recovery Body diode forward current current dI/dt D.U.T. V waveform DS Diode recovery dV/dt V DD Re-applied voltage Body diode forward drop Inductor current Ripple ≤ 5 % ISD Note a. V = - 5 V for logic level and - 3 V drive devices GS Fig. 14 - For P-Channel          Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?91092. S16-0754-Rev. C, 02-May-16 6 Document Number: 91092 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Package Information www.vishay.com Vishay Siliconix TO-220-1 A MILLIMETERS INCHES E DIM. MIN. MAX. MIN. MAX. F A 4.24 4.65 0.167 0.183 Ø P b 0.69 1.02 0.027 0.040 Q b(1) 1.14 1.78 0.045 0.070 1) H( c 0.36 0.61 0.014 0.024 D 14.33 15.85 0.564 0.624 E 9.96 10.52 0.392 0.414 D e 2.41 2.67 0.095 0.105 e(1) 4.88 5.28 0.192 0.208 F 1.14 1.40 0.045 0.055 H(1) 6.10 6.71 0.240 0.264 1 2 3 J(1) 2.41 2.92 0.095 0.115 L 13.36 14.40 0.526 0.567 1) L(1) 3.33 4.04 0.131 0.159 L( M* Ø P 3.53 3.94 0.139 0.155 Q 2.54 3.00 0.100 0.118 b(1) L ECN: X15-0364-Rev. C, 14-Dec-15 DWG: 6031 Note • M* = 0.052 inches to 0.064 inches (dimension including protrusion), heatsink hole for HVM C b e J(1) e(1) Package Picture ASE Xi’an Revison: 14-Dec-15 1 Document Number: 66542 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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