IRF9640S, SiHF9640S, IRF9640L, SiHF9640L www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Surface mount V (V) -200 • Available in tape and reel DS • Dynamic dV/dt rating RDS(on) () VGS = -10 V 0.50 • Repetitive avalanche rated Available Q max. (nC) 44 g • P-channel Qgs (nC) 7.1 • Fast switching Available Q (nC) 27 • Ease of paralleling gd • Material categorization: for definitions of Configuration Single compliance please see www.vishay.com/doc?99912 S Note * This datasheet provides information about parts that are I2PAK (TO-262) D2PAK (TO-263) RoHS-compliant and / or parts that are non-RoHS-compliant. For example, parts with lead (Pb) terminations are not RoHS-compliant. Please see the information / tables in this datasheet for details. G DESCRIPTION G Third generation power MOSFETs from Vishay provide the S D designer with the best combination of fast switching, GD S ruggedized device design, low on-resistance and cost-effectiveness. D The D2PAK (TO-263) is a surface mount power package. It provides the highest power capability and the lowest P-Channel MOSFET possible on-resistance in any existing surface mount package. The D2PAK (TO-263) is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0 W in a typical surface mount application. The through-hole version (IRF9640L, SiHF9640L) is available for low-profile applications. ORDERING INFORMATION Package D2PAK (TO-263) D2PAK (TO-263) D2PAK (TO-263) I2PAK (TO-262) Lead (Pb)-free and Halogen-free SiHF9640S-GE3 - - SiHF9640L-GE3 IRF9640SPbF IRF9640STRLPbF a IRF9640STRRPbF a IRF9640LPbF Lead (Pb)-free SiHF9640S-E3 SiHF9640STL-E3 a SiHF9640STR-E3 a SiHF9640L-E3 Note a. See device orientation. ABSOLUTE MAXIMUM RATINGS (T = 25 °C, unless otherwise noted) C PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V -200 DS V Gate-Source Voltage V ± 20 GS T = 25 °C -11 C Continuous Drain Current V at -10 V I GS D T = 100 °C -6.8 A C Pulsed Drain Current a I -44 DM Linear Derating Factor 1.0 W/°C Linear Derating Factor (PCB mount) e 0.025 Single Pulse Avalanche Energy b E 700 mJ AS Avalanche Current a I -11 A AR Repetitive Avalanche Energy a E 13 mJ AR Maximum Power Dissipation T = 25 °C 125 C P W Maximum Power Dissipation (PCB mount) e T = 25 °C D 3.0 A Peak Diode Recovery dV/d c dV/dt -5.0 V/ns Operating Junction and Storage Temperature Range T , T -55 to +150 J stg °C Soldering Recommendations (Peak temperature) d for 10 s 300 Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. VDD = -50 V, starting TJ = 25 °C, L = 8.7 mH, Rg = 25 , IAS = -11 A (see fig. 12). c. ISD  -11 A, dI/dt  150 A/μs, VDD  VDS, TJ  150 °C. d. 1.6 mm from case. e. When mounted on 1" square PCB (FR-4 or G-10 material). S16-0754-Rev. E, 02-May-16 1 Document Number: 91087 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

IRF9640S, SiHF9640S, IRF9640L, SiHF9640L www.vishay.com Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYP. MAX. UNIT Maximum Junction-to-Ambient R - 62 thJA Maximum Junction-to-Ambient  R - 40 °C/W (PCB mount) a thJA Maximum Junction-to-Case (Drain) R - 1.0 thJC Note a. When mounted on 1" square PCB (FR-4 or G-10 material). SPECIFICATIONS (T = 25 °C, unless otherwise noted) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage V V = 0 V, I = -250 μA -200 - - V DS GS D VDS Temperature Coefficient VDS/TJ Reference to 25 °C, ID = -1 mA - -0.20 - V/°C Gate-Source Threshold Voltage V V = V , I = -250 μA -2.0 - -4.0 V GS(th) DS GS D Gate-Source Leakage I V = ± 20 V - - ± 100 nA GSS GS V = -200 V, V = 0 V - - -100 DS GS Zero Gate Voltage Drain Current I μA DSS V = -160 V, V = 0 V, T = 125 °C - - -500 DS GS J Drain-Source On-State Resistance RDS(on) VGS = -10 V ID = 6.6 A b - - 0.50  Forward Transconductance g V = -50 V, I = -6.6 A b 4.1 - - S fs DS D Dynamic Input Capacitance C - 1200 - iss V = 0 V, GS Output Capacitance C V = -25 V, - 370 - pF oss DS f = 1.0 MHz, see fig. 5 Reverse Transfer Capacitance C - 81 - rss Total Gate Charge Q - - 44 g I = -11 A, V = -160 V, Gate-Source Charge Q V = -10 V D DS - - 7.1 nC gs GS see fig. 6 and 13 b Gate-Drain Charge Q - - 27 gd Turn-On Delay Time t - 14 - d(on) Rise Time tr VDD = -100 V, ID = -11 A, - 43 - ns Turn-Off Delay Time td(off) Rg = 9.1 , RD = 8.6 , see fig. 10 b - 39 - Fall Time t - 38 - f Internal Drain Inductance L Between lead, D - 4.5 - D 6 mm (0.25") from nH package and center of G Internal Source Inductance L - 7.5 - S die contact S Gate Input Resistance Rg f = 1 MHz, open drain 0.3 - 1.7  Drain-Source Body Diode Characteristics MOSFET symbol Continuous Source-Drain Diode Current IS showing the  D - - -11 integral reverse A Pulsed Diode Forward Current a I p -n junction diode G - - -44 SM S Body Diode Voltage V T = 25 °C, I = -11 A, V = 0 V b - - -5.0 V SD J S GS Body Diode Reverse Recovery Time t - 250 300 ns rr T = 25 °C, I = -11 A, dI/dt = 100 A/μs b J F Body Diode Reverse Recovery Charge Q - 2.9 3.6 μC rr Forward Turn-On Time t Intrinsic turn-on time is negligible (turn-on is dominated by L and L ) on S D Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width  300 μs; duty cycle  2 %. S16-0754-Rev. E, 02-May-16 2 Document Number: 91087 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

IRF9640S, SiHF9640S, IRF9640L, SiHF9640L www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) e 3.0 VGS nc ID = - 11 A Top --- 11850.0 VV V sista 2.5 VGS = - 10 V A) - 7.0 V Re urrent ( 101 Bottom---- 6554....0505 VVVV ce On zed) 2.0 n C ourmali 1.5 - I, DraiD - 4.5 V Drain-to-S(Nor 1.0 20 µs Pulse Width , n) 0.5 o 100 TC = 25 °C RDS( 0.0 100 101 - 60- 40- 20 0 20 40 60 80 100120140160 91087_01 - VDS, Drain-to-Source Voltage (V) 91087_04 TJ, Junction Temperature (°C) Fig. 1 - Typical Output Characteristics, T = 25 °C Fig. 4 - Normalized On-Resistance vs. Temperature C Top -V 1G5S V 2400 VCGS == C0 V, +f =C 1 ,M CHz Shorted iss gs gd ds - 10 V 2000 C = C urrent (A) 101 ----- 87655.....00050 VVVVV ce (pF) 1600 Crossss = Cgdds + CgCdiss , Drain CD Bottom - 4.5 V - 4.5 V Capacitan 1280000 C - I oss 400 20 µs Pulse Width C rss T = 150 °C 100 C 0 100 101 100 101 91087_02 - VDS, Drain-to-Source Voltage (V) 91087_05 - VDS, Drain-to-Source Voltage (V) Fig. 2 - Typical Output Characteristics, T = 150 °C Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage C 20 I = - 11 A V) D nt (A) 101 25 °C 150 °C Voltage ( 16 VDS = - 10V0D SV = - 160 V Curre urce 12 VDS = - 40 V n So , DraiD ate-to- 8 - I 100 , GS 4 20 µs Pulse Width VG For test circuit VDS = - 50 V - see figure 13 0 4 5 6 7 8 9 10 0 10 20 30 40 50 60 91087_03 - VGS, Gate-to-Source Voltage (V) 91087_06 QG, Total Gate Charge (nC) Fig. 3 - Typical Transfer Characteristics Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage S16-0754-Rev. E, 02-May-16 3 Document Number: 91087 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

IRF9640S, SiHF9640S, IRF9640L, SiHF9640L www.vishay.com Vishay Siliconix 12 A) nt ( 10 Curre 101 nt (A) 8 ain 25 °C urre Dr 150 °C C 6 , Reverse SD 100 - I, Drain D 42 - I V = 0 V 10-1 GS 0 0.0 1.0 2.0 3.0 4.0 5.0 25 50 75 100 125 150 91087_07 - VSD, Source-to-Drain Voltage (V) 91087_09 TC, Case Temperature (°C) Fig. 7 - Typical Source-Drain Diode Forward Voltage Fig. 9 - Maximum Drain Current vs. Case Temperature R 102 D Operation in this area limited VDS by R 5 DS(on) 10 µs VGS D.U.T. A) R urrent ( 2 100 µs g +-VDD C 10 - 10 V Drain 5 1 ms PDuultsye f awcitdotrh ≤≤ 01. 1µ %s - I, D Fig. 10a - Switching Time Test Circuit T = 25 °C 2 C T = 150 °C 10 ms J t t t t Single Pulse d(on) r d(off) f 1 V 1 2 5 10 2 5 102 2 5 103 10 G%S 91087_08 - VDS, Drain-to-Source Voltage (V) Fig. 8 - Maximum Safe Operating Area 90 % V DS Fig. 10b - Switching Time Waveforms 10 )C hJ Zt e ( 1 s on D = 0.50 sp PDM e 0.20 R mal 0.1 0.10 t1 er 0.05 t2 Th 0.02 Single Pulse Notes: 0.01 (Thermal Response) 1. Duty Factor, D = t1/t2 2. Peak T = P x Z + T j DM thJC C 10-2 10-5 10-4 10-3 10-2 0.1 1 10 91087_11 t1, Rectangular Pulse Duration (s) Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case S16-0754-Rev. E, 02-May-16 4 Document Number: 91087 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

IRF9640S, SiHF9640S, IRF9640L, SiHF9640L www.vishay.com Vishay Siliconix L I V AS DS Vary t to obtain p required I AS V Rg D.U.T - DS +V DD IAS VDD - 10 V tp t 0.01 Ω p V DS Fig. 12a - Unclamped Inductive Test Circuit Fig. 12b - Unclamped Inductive Waveforms 1600 I D J) Top - 4.9 A m - 7.0 A y ( 1200 Bottom - 11 A g er n E e s 800 ul P e gl n Si 400 , S A E V = - 50 V 0 DD 25 50 75 100 125 150 91087_12c Starting TJ, Junction Temperature (°C) Fig. 12c - Maximum Avalanche Energy vs. Drain Current Current regulator Same type as D.U.T. Q 50 kΩ G - 10 V 12 V 0.2 µF 0.3 µF QGS QGD - V D.U.T. + DS V G V GS - 3 mA Charge I I G D Current sampling resistors Fig. 13a - Basic Gate Charge Waveform Fig. 13b - Gate Charge Test Circuit S16-0754-Rev. E, 02-May-16 5 Document Number: 91087 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

IRF9640S, SiHF9640S, IRF9640L, SiHF9640L www.vishay.com Vishay Siliconix Peak Diode Recovery dV/dt Test Circuit D.U.T. + Circuit layout considerations (cid:129) Low stray inductance (cid:129) Ground plane (cid:129) Low leakage inductance current transformer - + - + - Rg (cid:129) dV/dt controlled by Rg + (cid:129)(cid:129) IDSD.U c.oTn. t-r odlelevdic be yu dnduteyr ftaecsttor “D” - VDD Note (cid:129) Compliment N-Channel of D.U.T. for driver Driver gate drive P.W. Period D = P.W. Period V = - 10 Va GS D.U.T. l waveform SD Reverse recovery Body diode forward current current dI/dt D.U.T. V waveform DS Diode recovery dV/dt V DD Re-applied voltage Body diode forward drop Inductor current Ripple ≤ 5 % ISD Note a. V = - 5 V for logic level and - 3 V drive devices GS Fig. 14 - For P-Channel          Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91087. S16-0754-Rev. E, 02-May-16 6 Document Number: 91087 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Package Information Vishay Siliconix TO-263AB (HIGH VOLTAGE) A (Datum A) 3 4 A A B E c2 H 4 L1 4 Gauge plane 0° to 8° B D 5 Detail A Seating plane H 1 2C 3 C L3 L L4 A1 Detail “A” L2 Rotated 90° CW BB BB scale 8:1 A 2 x b2 2 x b c E 0.010M AM B ± 0.004M B 2 x e Base Plating 5 metal D1 4 b1, b3 (c) c1 5 (b, b2) Lead tip Section B - B and C - C E1 4 Scale: none View A - A MILLIMETERS INCHES MILLIMETERS INCHES DIM. MIN. MAX. MIN. MAX. DIM. MIN. MAX. MIN. MAX. A 4.06 4.83 0.160 0.190 D1 6.86 - 0.270 - A1 0.00 0.25 0.000 0.010 E 9.65 10.67 0.380 0.420 b 0.51 0.99 0.020 0.039 E1 6.22 - 0.245 - b1 0.51 0.89 0.020 0.035 e 2.54 BSC 0.100 BSC b2 1.14 1.78 0.045 0.070 H 14.61 15.88 0.575 0.625 b3 1.14 1.73 0.045 0.068 L 1.78 2.79 0.070 0.110 c 0.38 0.74 0.015 0.029 L1 - 1.65 - 0.066 c1 0.38 0.58 0.015 0.023 L2 - 1.78 - 0.070 c2 1.14 1.65 0.045 0.065 L3 0.25 BSC 0.010 BSC D 8.38 9.65 0.330 0.380 L4 4.78 5.28 0.188 0.208 ECN: S-82110-Rev. A, 15-Sep-08 DWG: 5970 Notes 1. Dimensioning and tolerancing per ASME Y14.5M-1994. 2. Dimensions are shown in millimeters (inches). 3. Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outmost extremes of the plastic body at datum A. 4. Thermal PAD contour optional within dimension E, L1, D1 and E1. 5. Dimension b1 and c1 apply to base metal only. 6. Datum A and B to be determined at datum plane H. 7. Outline conforms to JEDEC outline to TO-263AB. Document Number: 91364 www.vishay.com Revision: 15-Sep-08 1

Package Information Vishay Siliconix I2PAK (TO-262) (HIGH VOLTAGE) (Datum A) A B E A c2 E A L1 Seating D1 plane D C C L2 B B L A c 3 x b2 E1 3 x b A1 Section A - A 2 x e Base metal Plating b1, b3 0.010 M A M B c c1 (b, b2) Lead tip Section B - B and C - C Scale: None MILLIMETERS INCHES MILLIMETERS INCHES DIM. MIN. MAX. MIN. MAX. DIM. MIN. MAX. MIN. MAX. A 4.06 4.83 0.160 0.190 D 8.38 9.65 0.330 0.380 A1 2.03 3.02 0.080 0.119 D1 6.86 - 0.270 - b 0.51 0.99 0.020 0.039 E 9.65 10.67 0.380 0.420 b1 0.51 0.89 0.020 0.035 E1 6.22 - 0.245 - b2 1.14 1.78 0.045 0.070 e 2.54 BSC 0.100 BSC b3 1.14 1.73 0.045 0.068 L 13.46 14.10 0.530 0.555 c 0.38 0.74 0.015 0.029 L1 - 1.65 - 0.065 c1 0.38 0.58 0.015 0.023 L2 3.56 3.71 0.140 0.146 c2 1.14 1.65 0.045 0.065 ECN: S-82442-Rev. A, 27-Oct-08 DWG: 5977 Notes 1. Dimensioning and tolerancing per ASME Y14.5M-1994. 2. Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm per side. These dimensions are measured at the outmost extremes of the plastic body. 3. Thermal pad contour optional within dimension E, L1, D1, and E1. 4. Dimension b1 and c1 apply to base metal only. Document Number: 91367 www.vishay.com Revision: 27-Oct-08 1

AN826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR D2PAK: 3-Lead 0.420 (10.668) 5 7) 5 1 3 0 0. 9. ( 0.635 16.129) ( 0.145 (3.683) 0.135 (3.429) 0.200 0.050 (5.080) (1.257) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index Document Number: 73397 www.vishay.com 11-Apr-05 1

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Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: V ishay: IRF9640STRLPBF IRF9640LPBF IRF9640STRRPBF IRF9640S IRF9640STRL IRF9640STRR IRF9640SPBF SIHF9640S-GE3