IRF9630, SiHF9630 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Dynamic dV/dt rating VDS (V) -200 • Repetitive avalanche rated Available RDS(on) max. () VGS = -10 V 0.80 • P-channel Q max. (nC) 29 • Fast switching Available g • Ease of paralleling Q (nC) 5.4 gs • Simple drive requirements Q (nC) 15 gd • Material categorization: for definitions of compliance Configuration Single please see www.vishay.com/doc?99912 S Note * This datasheet provides information about parts that are RoHS-compliant and / or parts that are non-RoHS-compliant. For TO-220AB example, parts with lead (Pb) terminations are not RoHS-compliant. Please see the information / tables in this datasheet for details. G DESCRIPTION Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, S ruggedized device design, low on-resistance and D D G cost-effectiveness.  P-Channel MOSFET The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220AB contribute to its wide acceptance throughout the industry. ORDERING INFORMATION Package TO-220AB IRF9630PbF Lead (Pb)-free SiHF9630-E3 IRF9630 SnPb SiHF9630 ABSOLUTE MAXIMUM RATINGS (T = 25 °C, unless otherwise noted) C PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V -200 DS V Gate-Source Voltage V ± 20 GS T = 25 °C -6.5 C Continuous Drain Current V at -10 V I GS D T = 100 °C -4.0 A C Pulsed Drain Current a I -26 DM Linear Derating Factor 0.59 W/°C Single Pulse Avalanche Energy b E 500 mJ AS Repetitive Avalanche Current a I -6.4 A AR Repetitive Avalanche Energy a E 7.4 mJ AR Maximum Power Dissipation T = 25 °C P 74 W C D Peak Diode Recovery dV/dt c dV/dt -5.0 V/ns Operating Junction and Storage Temperature Range T , T -55 to +150 J stg °C Soldering Recommendations (Peak temperature) d for 10 s 300 10 lbf · in Mounting Torque 6-32 or M3 screw 1.1 N · m Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. VDD = -50 V, starting TJ = 25 °C, L = 17 mH, Rg = 25 , IAS = -6.5 A (see fig. 12). c. ISD  -6.5 A, dI/dt 20 A/μs, VDD  VDS, TJ  150 °C. d. 1.6 mm from case. S16-0754-Rev. D, 02-May-16 1 Document Number: 91084 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

IRF9630, SiHF9630 www.vishay.com Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYP. MAX. UNIT Maximum Junction-to-Ambient R - 62 thJA Case-to-Sink, Flat, Greased Surface R 0.50 - °C/W thCS Maximum Junction-to-Case (Drain) R - 1.7 thJC SPECIFICATIONS (T = 25 °C, unless otherwise noted) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage V V = 0 V, I = -250 μA -200 - - V DS GS D VDS Temperature Coefficient VDS/TJ Reference to 25 °C, ID = -1 mA - -0.24 - V/°C Gate-Source Threshold Voltage V V = V , I = -250 μA -2.0 - -4.0 V GS(th) DS GS D Gate-Source Leakage I V = ± 20 V - - ± 100 nA GSS GS V = -200 V, V = 0 V - - -100 DS GS Zero Gate Voltage Drain Current I μA DSS V = -160 V, V = 0 V, T = 125 °C - - -500 DS GS J Drain-Source On-State Resistance RDS(on) VGS = -10 V ID = -3.9 A b - - 0.80  Forward Transconductance g V = -50 V, I = -3.9 A b 2.8 - - S fs DS D Dynamic Input Capacitance C - 700 - iss V = 0 V, GS Output Capacitance C V = -25 V, - 200 - pF oss DS f = 1.0 MHz, see fig. 5 Reverse Transfer Capacitance C - 40 - rss Total Gate Charge Q - - 29 g I = -6.5 A, D Gate-Source Charge Q V = -10 V V = -160 V, - - 5.4 nC gs GS DS see fig. 6 and 13 b Gate-Drain Charge Q - - 15 gd Turn-On Delay Time t - 12 - d(on) Rise Time t - 27 - r VDD = -100 V, ID = -6.5 A, ns Turn-Off Delay Time td(off) Rg = 12 , RD = 15, see fig. 10 b - 28 - Fall Time t - 24 - f Between lead, Internal Drain Inductance L D - 4.5 - D 6 mm (0.25") from nH package and center of G Internal Source Inductance L - 7.5 - S die contact S Gate Input Resistance Rg f = 1 MHz, open drain 0.6 - 3.7  Drain-Source Body Diode Characteristics MOSFET symbol Continuous Source-Drain Diode Current IS showing the  D - - -6.5 A integral reverse G Pulsed Diode Forward Current a I - - -26 SM p -n junction diode S Body Diode Voltage V T = 25 °C, I = -6.5 A, V = 0 V b - - -6.5 V SD J S GS Body Diode Reverse Recovery Time t - 200 300 ns rr T = 25 °C, I = -6.5 A, dI/dt = 100 A/μs b J F Body Diode Reverse Recovery Charge Q - 1.9 2.9 μC rr Forward Turn-On Time t Intrinsic turn-on time is negligible (turn-on is dominated by L and L ) on S D Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width  300 μs; duty cycle  2 %. S16-0754-Rev. D, 02-May-16 2 Document Number: 91084 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

IRF9630, SiHF9630 www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) VGS nce 3.0 ID = - 6.5 A n Current (A) 101 BToopttom-------- 1187655450......000505 VV VVVVVV - 4.5 V ource On Resistamalized) 122...505 VGS = - 10 V - I, DraiD 100 Drain-to-S(Nor 1.0 20 µs Pulse Width , n) 0.5 o 10-1 TC = 25 °C RDS( 0.0 10-1 100 101 - 60- 40- 20 0 20 40 60 80 100120140160 91084_01 - VDS, Drain-to-Source Voltage (V) 91084_04 TJ, Junction Temperature (°C) Fig. 1 - Typical Output Characteristics, T = 25 °C Fig. 4 - Normalized On-Resistance vs. Temperature C 1200 VGS = 0 V, f = 1 MHz VGS Ciss = Cgs + Cgd, Cds Shorted Top - 15 V 1000 C = C rss gd 101 - 10 V C = C + C oss ds gd nt (A) --- 876...000 VVV e (pF) 800 Ciss e c Curr -- 55..50 VV - 4.5 V citan 600 ain 100 Bottom - 4.5 V apa 400 Dr C , D Coss - I 200 C rss 20 µs Pulse Width 0 T = 150 °C 10-1 C 100 101 10-1 100 101 91084_05 - VDS, Drain-to-Source Voltage (V) 91084_02 - VDS, Drain-to-Source Voltage (V) Fig. 2 - Typical Output Characteristics, T = 150 °C Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage C 20 I = - 6.5 A V) D e ( VDS = - 160 V nt (A) 101 25 °C 150 °C Voltag 16 VDS = - 100 V Curre urce 12 VDS = - 40 V n So , DraiD ate-to- 8 - I 100 , GS 4 20 µs Pulse Width VG For test circuit VDS = - 50 V - see figure 13 0 4 5 6 7 8 9 10 0 5 10 15 20 25 30 91084_03 - VGS, Gate-to-Source Voltage (V) 91084_06 QG, Total Gate Charge (nC) Fig. 3 - Typical Transfer Characteristics Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage S16-0754-Rev. D, 02-May-16 3 Document Number: 91084 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

IRF9630, SiHF9630 www.vishay.com Vishay Siliconix 7.0 A) nt ( 101 6.0 Curre 150 °C nt (A) 5.0 ain 25 °C urre 4.0 Dr C se 100 ain 3.0 er Dr , RevD - I, D 2.0 S 1.0 - I V = 0 V GS 10-1 0.0 0.5 1.5 2.5 3.5 4.5 25 50 75 100 125 150 91084_07 - VSD, Source-to-Drain Voltage (V) 91084_09 TC, Case Temperature (°C) Fig. 7 - Typical Source-Drain Diode Forward Voltage Fig. 9 - Maximum Drain Current vs. Case Temperature R D 103 Operation in this area limited VDS 5 by R DS(on) V 2 GS D.U.T. nt (A) 1025 RG +-VDD urre 2 10 µs - 10 V C 10 100 µs n Pulse width ≤ 1 µs ai 5 Duty factor ≤ 0.1 % Dr 1 ms - I, D 12 10 ms Fig. 10a - Switching Time Test Circuit 5 TC = 25 °C T = 150 °C 2 J t t t t Single Pulse d(on) r d(off) f 0.1 VGS 0.1 2 5 1 2 5 10 2 5 102 2 5 103 10 % 91084_08 - VDS, Drain-to-Source Voltage (V) Fig. 8 - Maximum Safe Operating Area 90 % V DS Fig. 10b - Switching Time Waveforms 10 )C hJ Zt e ( 1 D = 0.5 s n o esp 00..21 PDM R mal 0.1 0.05 t1 er 0.02 t2 Th 0.01 Single Pulse Notes: (Thermal Response) 1. Duty Factor, D = t/t 1 2 2. Peak T = P x Z + T j DM thJC C 10-2 10-5 10-4 10-3 10-2 0.1 1 10 91084_11 t1, Rectangular Pulse Duration (s) Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case S16-0754-Rev. D, 02-May-16 4 Document Number: 91084 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

IRF9630, SiHF9630 www.vishay.com Vishay Siliconix I L AS V DS Vary t to obtain p required I AS V DS R D.U.T G - +V DD IAS VDD - 10 V tp tp 0.01 Ω A V DS Fig. 12a - Unclamped Inductive Test Circuit Fig. 12b - Unclamped Inductive Waveforms 1200 I D J) Top - 2.9 A m 1000 - 4.1 A y ( Bottom - 6.5 A g er 800 n E e s 600 ul P e gl 400 n Si , S 200 A E V = - 50 V DD 0 25 50 75 100 125 150 91084_12c Starting TJ, Junction Temperature (°C) Fig. 12c - Maximum Avalanche Energy vs. Drain Current Current regulator Same type as D.U.T. Q 50 kΩ G - 10 V 12 V 0.2 µF 0.3 µF QGS QGD - V D.U.T. + DS V G V GS - 3 mA Charge I I G D Current sampling resistors Fig. 13a - Basic Gate Charge Waveform Fig. 13c - Gate Charge Test Circuit S16-0754-Rev. D, 02-May-16 5 Document Number: 91084 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

IRF9630, SiHF9630 www.vishay.com Vishay Siliconix Peak Diode Recovery dV/dt Test Circuit D.U.T. + Circuit layout considerations (cid:129) Low stray inductance (cid:129) Ground plane (cid:129) Low leakage inductance current transformer - + - + - Rg (cid:129) dV/dt controlled by Rg + (cid:129)(cid:129) IDSD.U c.oTn. t-r odlelevdic be yu dnduteyr ftaecsttor “D” - VDD Note (cid:129) Compliment N-Channel of D.U.T. for driver Driver gate drive P.W. Period D = P.W. Period V = - 10 Va GS D.U.T. l waveform SD Reverse recovery Body diode forward current current dI/dt D.U.T. V waveform DS Diode recovery dV/dt V DD Re-applied voltage Body diode forward drop Inductor current Ripple ≤ 5 % ISD Note a. V = - 5 V for logic level and - 3 V drive devices GS Fig. 14 - For P-Channel          Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91084. S16-0754-Rev. D, 02-May-16 6 Document Number: 91084 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Package Information www.vishay.com Vishay Siliconix TO-220-1 A MILLIMETERS INCHES E DIM. MIN. MAX. MIN. MAX. F A 4.24 4.65 0.167 0.183 Ø P b 0.69 1.02 0.027 0.040 Q b(1) 1.14 1.78 0.045 0.070 1) H( c 0.36 0.61 0.014 0.024 D 14.33 15.85 0.564 0.624 E 9.96 10.52 0.392 0.414 D e 2.41 2.67 0.095 0.105 e(1) 4.88 5.28 0.192 0.208 F 1.14 1.40 0.045 0.055 H(1) 6.10 6.71 0.240 0.264 1 2 3 J(1) 2.41 2.92 0.095 0.115 L 13.36 14.40 0.526 0.567 1) L(1) 3.33 4.04 0.131 0.159 L( M* Ø P 3.53 3.94 0.139 0.155 Q 2.54 3.00 0.100 0.118 b(1) L ECN: X15-0364-Rev. C, 14-Dec-15 DWG: 6031 Note • M* = 0.052 inches to 0.064 inches (dimension including protrusion), heatsink hole for HVM C b e J(1) e(1) Package Picture ASE Xi’an Revison: 14-Dec-15 1 Document Number: 66542 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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